DMT8012LPS Green 80V N-CHANNEL ENHANCEMENT MODE MOSFET ® POWERDI Product Summary Features BVDSS RDS(ON) 80V 17mΩ @ VGS = 10V 21mΩ @ VGS = 4.5V ID TC = +25°C 65A 59A Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it High Conversion Efficiency Low RDS(ON) – Minimizes On State Losses Low Input Capacitance Fast Switching Speed <1.1mm Package Profile – Ideal for Thin Applications Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data ideal for high-efficiency power management applications. Synchronous Rectifier Backlighting Power Management Functions DC-DC Converters Case: POWERDI®5060-8 Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Finish - Matte Tin Annealed over Copper Leadframe; Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) POWERDI®5060-8 Pin1 Top View Bottom View S D S D S D G D Top View Pin Configuration Internal Schematic Ordering Information (Note 4) Part Number DMT8012LPS-13 Notes: Case POWERDI®5060-8 Packaging 2,500 / Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information D D D D =Manufacturer’s Marking T8012LS = Product Type Marking Code YYWW = Date Code Marking YY = Last Digit of Year (ex: 14 = 2014) WW = Week Code (01 to 53) T8012LS YY WW S S S G POWERDI is a registered trademark of Diodes Incorporated. DMT8012LPS Document number: DS37738 Rev. 3 - 2 1 of 7 www.diodes.com July 2015 © Diodes Incorporated DMT8012LPS Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS = 10V (Note 5) Continuous Drain Current, VGS = 10V (Note 6) TA = +25°C TA = +70°C TC = +25°C TC = +70°C Value 80 ±20 9 7.2 ID A 65 51 80 80 11.6 10.2 A A A mJ Value 2.1 56 113 1.1 -55 to +150 Units W °C/W W °C/W °C ID Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Avalanche Current, L=0.1mH Avalanche Energy, L=0.1mH Units V V IS IDM IAS EAS A Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Electrical Characteristics TA = +25°C TC = +25°C Symbol PD RθJA PD RθJC TJ, TSTG (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 80 - - 1 ±100 V μA nA VGS = 0V, ID = 1mA VDS = 64V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) RDS(ON) 3 17 21 1.2 mΩ VSD 1.3 14 16.5 0.9 V Static Drain-Source On-Resistance 1 - VDS = VGS, ID = 250μA VGS = 10V, ID = 12A VGS = 4.5V, ID = 6A VGS = 0V, IS = 20A Ciss Coss Crss - 1,949 177 10 - pF VDS = 40V, VGS = 0V, f = 1MHz Gate Resistance Rg - 0.7 - Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Qg Qg Qgs Qgd - 15 34 6 4.5 4.9 3.8 16.5 3.5 30.2 34.6 - nC VDS = 40V, ID = 12A ns VDD = 40V, VGS = 10V, ID = 12A, RG = 1.6Ω ns nC IF = 12A, di/dt = 100A/μs Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: tD(ON) tR tD(OFF) tF tRR Qrr V Test Condition 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. POWERDI is a registered trademark of Diodes Incorporated. DMT8012LPS Document number: DS37738 Rev. 3 - 2 2 of 7 www.diodes.com July 2015 © Diodes Incorporated DMT8012LPS 30.0 30 25 VGS=6.0V 20.0 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS= 5.0V VGS=10.0V 25.0 VGS=5.0V VGS=4.5V VGS=4.0V 15.0 10.0 20 15 10 5.0 5 -55℃ 0.0 0 0 0.5 1 1.5 2 2.5 3 1 2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (mΩ) 0.03 0.03 0.02 VGS=4.5V 0.02 0.01 3 4 5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 25℃ 125℃ VGS=3.5V VGS=10.0V 0.01 0.03 0.025 0.02 0.015 0.00 ID=12A ID=6A 0.01 0 5 10 15 20 25 30 2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 0.03 VGS=10V 150℃ 0.025 125℃ 0.02 85℃ 0.015 25℃ 0.01 -55℃ 4 6 8 10 12 14 16 18 20 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs Drain Current and Gate Voltage RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 85℃ 150℃ 2.5 2.3 2.1 1.9 VGS=10V, ID=20A 1.7 1.5 1.3 1.1 VGS=4.5V, ID=20A 0.9 0.7 0.5 0.005 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs Drain Current and Temperature -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Temperature POWERDI is a registered trademark of Diodes Incorporated. DMT8012LPS Document number: DS37738 Rev. 3 - 2 3 of 7 www.diodes.com July 2015 © Diodes Incorporated 3.5 0.04 VGS(TH), GATE THESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-ESISTANCE (Ω) DMT8012LPS 0.03 VGS=4.5V, ID=20A 0.02 0.01 VGS=10V, ID=20A 3 ID=1mA 2.5 2 ID=250µA 1.5 1 0.5 0 -50 -25 0 25 50 75 100 125 -50 150 -25 0 25 50 75 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Theshold Variation vs Temperature TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Temperature 30 10000 VGS=0V CT, JUNCTION CAPACITANCE (pF) f=1MHz 25 IS, SOURCE CURRENT (A) 100 20 15 10 TA=85℃ TA=150℃ 5 TA=25℃ TA=125℃ Ciss 1000 Coss 100 Crss 10 TA=-55℃ 0 1 0 0.3 0.6 0.9 1.2 1.5 0 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs Current 5 10 15 25 30 35 40 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 100 10 RDS(ON) Limited 9 ID, DRAIN CURRENT (A) 8 7 6 VGS (V) 20 5 4 VDS=40V, ID=12A 3 2 DC PW =10s PW =1s PW =100ms PW =10ms PW =1ms 10 PW =100µs 1 TJ(Max)=150℃ TA=25℃ VGS=10V Single Pulse DUT on 1*MRP Board 1 0 0.1 0 5 10 15 20 25 30 35 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area Qg (nC) Figure 11. Gate Charge POWERDI is a registered trademark of Diodes Incorporated. DMT8012LPS Document number: DS37738 Rev. 3 - 2 4 of 7 www.diodes.com July 2015 © Diodes Incorporated DMT8012LPS r(t), TRANSIENT THERMAL RESISTANCE 1 D=0.9 D=0.5 D=0.7 D=0.3 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJC (t)=r(t) * RθJC RθJC=1.05℃/W Duty Cycle, D=t1 / t2 D=Single Pulse 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance POWERDI is a registered trademark of Diodes Incorporated. DMT8012LPS Document number: DS37738 Rev. 3 - 2 5 of 7 www.diodes.com July 2015 © Diodes Incorporated DMT8012LPS Package Outline Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. D Detail A D1 0(4X) c A1 E1 E e 01 (4X) 1 b (8X) e/2 1 L b2 (4X) D3 A K D2 E3 E2 M b3 (4X) M1 Detail A L1 G POWERDI®5060-8 Dim Min Max Typ A 0.90 1.10 1.00 A1 0.00 0.05 b 0.33 0.51 0.41 b2 0.200 0.350 0.273 b3 0.40 0.80 0.60 c 0.230 0.330 0.277 D 5.15 BSC D1 4.70 5.10 4.90 D2 3.70 4.10 3.90 D3 3.90 4.30 4.10 E 6.15 BSC E1 5.60 6.00 5.80 E2 3.28 3.68 3.48 E3 3.99 4.39 4.19 e 1.27 BSC G 0.51 0.71 0.61 K 0.51 L 0.51 0.71 0.61 L1 0.100 0.200 0.175 M 3.235 4.035 3.635 M1 1.00 1.40 1.21 θ 10° 12° 11° θ1 6° 8° 7° All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X4 Y2 X3 Y3 Y5 Y1 X2 Y4 X1 Y7 Y6 G1 C X G Y(4x) Dimensions C G G1 X X1 X2 X3 X4 Y Y1 Y2 Y3 Y4 Y5 Y6 Y7 Value (in mm) 1.270 0.660 0.820 0.610 4.100 0.755 4.420 5.610 1.270 0.600 1.020 0.295 1.825 3.810 0.180 6.610 POWERDI is a registered trademark of Diodes Incorporated. DMT8012LPS Document number: DS37738 Rev. 3 - 2 6 of 7 www.diodes.com July 2015 © Diodes Incorporated DMT8012LPS IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated www.diodes.com POWERDI is a registered trademark of Diodes Incorporated. DMT8012LPS Document number: DS37738 Rev. 3 - 2 7 of 7 www.diodes.com July 2015 © Diodes Incorporated