IXYS IXTR30N25 N-channel enhancement mode Datasheet

Advance Technical Information
Standard Power MOSFETs
ISOPLUS247TM
IXTR 30N25
(Electrically Isolated Backside)
VDSS = 250 V
ID (cont) = 25 A
Ω
RDS(on) = 75 mΩ
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt
Maximum Ratings
ISOPLUS 247TM
E153432
Symbol
Test Conditions
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
250
250
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, Note 1
TC = 25°C
25
120
30
A
A
A
EAR
EAS
TC = 25°C
TC = 25°C
30
1.0
mJ
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
5
V/ns
PD
TC = 25°C
150
W
TJ
-55 ... +150
°C
TJM
Tstg
150
-55 ... +150
°C
°C
300
°C
2500
V~
l
5
g
l
TL
1.6 mm (0.063 in.) from case for 10 s
VISOL
50/60 Hz, RMS
t = 1 min
Weight
Isolated backside*
G = Gate
D = Drain
S = Source
* Patent pending
Features
l
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
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Low drain to tab capacitance(<30pF)
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Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Rated for Unclamped Inductive Load
Switching (UIS)
Applications
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
VGS = 0 V, ID = 250µA
250
V
VGS(th)
VDS = VGS, ID = 250µA
2.0
4.0 V
IGSS
VGS = ±20 V, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = IT
Notes 2, 3
© 2001 IXYS All rights reserved
l
l
l
l
l
±100 nA
25 µA
250 µA
TJ = 125°C
60
75 mΩ
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Advantages
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l
l
Easy assembly
Space savings
High power density
98873 (12/01)
IXTR 30N25
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
V DS = 10 V; ID = IT
Notes 2, 3
24
32
S
3950
pF
510
pF
Crss
177
pF
td(on)
19
ns
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = 30A
19
ns
td(off)
RG = 3.6 Ω (External), Notes 2, 3
79
ns
17
ns
136
nC
32
nC
52
nC
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 VDSS, ID = IT
Notes 2, 3
Qgd
0.75
RthJC
Source-Drain Diode
Symbol
Test Conditions
IS
V GS = 0 V
ISM
Repetitive; Note 1
VSD
IF = IS, VGS = 0 V, Notes 2, 3
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
t rr
QRM
K/W
0.15
RthCK
ISOPLUS 247 OUTLINE
IF = IS, -di/dt = 100 A/µs, VR = 100 V
30
A
120
A
1.5
V
300
ns
3.0
µC
Note: 1. Pulse width limited by TJM
2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
3. IT = 15A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
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