CPW2-0650-S016B Silicon Carbide Schottky Diode Chip VRRM Z-Rec Rectifier ® 650 V IF(AVG) = 16 A Features • • • • • • • = Qc Chip Outline = 44.5 nC 650-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on VF Part Number Die Size Anode Cathode CPW2-0650-S006B 2.41 x 2.41 Al Ni/Ag Maximum Ratings v. -, 09-2016 2-0650-S016B Re Datasheet: CPW Symbol Parameter Value Unit Test Conditions Note VRRM Repetitive Peak Reverse Voltage 650 V VRSM Surge Peak Reverse Voltage 650 V VR DC Peak Blocking Voltage 650 V IF Continuous Forward Current 39 18 16 A TC=25˚C TC=135˚C TC=142˚C 1 IFRM Repetitive Peak Forward Surge Current 66 46 A TC=25˚C, tP = 10 ms, Half Sine Wave TC=110˚C, tP = 10 ms, Half Sine Wave 1 IFSM Non-Repetitive Peak Forward Surge Current 162 150 A TC=25˚C, tp = 10 ms, Half Sine Wave TC=110˚C, tp = 10 ms, Half Sine Wave 1 IF,Max Non-Repetitive Peak Forward Surge Current 1400 1200 A TC=25˚C, tP = 10 µs, Pulse TC=110˚C, tP = 10 µs, Pulse Diode dV/dt ruggedness 200 V/ns i2t value 131 112.5 A2s Operating Junction and Storage Temperature -55 to +175 ˚C 325 ˚C dV/dt ∫i2dt TJ , Tstg TProc Maximum Processing Temperature VR=0-600V TC=25˚C, tP=10 ms TC=110˚C, tP=10 ms 1 10 min. maximum 1. Assumes RθJC Thermal Resistance of 1˚C/W or less Subject to change without notice. www.cree.com/power 1 Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions VF Forward Voltage 1.5 2.0 1.8 2.4 V IF = 16 A TJ=25°C IF = 16 A TJ=175°C Fig. 1 IR Reverse Current 18 38.5 95 378 μA VR = 650 V TJ=25°C VR = 650 V TJ=175°C Fig. 2 QC Total Capacitive Charge 44.5 nC VR = 400 V, IF = 16 A di/dt = 500 A/μs TJ = 25°C Fig. 3 C Total Capacitance 877.5 80 64 pF VR = 0 V, TJ = 25°C, f = 1 MHz VR = 200 V, TJ = 25˚C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz Fig. 4 EC Capacitance Stored Energy 6.2 μJ VR = 400 V Mechanical Parameters Parameter Typ. Unit Die Size 2.41 x 2.41 mm Anode Pad Size 2.13 x 2.13 mm Anode Pad Opening 2.02 x 2.02 mm Thickness 377 ± 10% μm Wafer Size 100 mm 4 μm 1.8 μm Anode Metalization (Al) Cathode Metalization (Ni/Ag) Frontside Passivation 2 Note CPW2-0650-S016B Rev. -, 09-2016 Polyimide Typical Characteristics 30 TJ = -55 °C 35 TJ = 25 °C 30 TJ = 75 °C 25 TJ = 125 °C 20 TJ = 175 °C 25 20 Tot 40 Reverse LeakagePCurrent, (W) IRR (uA) IF(peak) (A)IF (A) Foward Current, 45 15 10 5 TJ = 175 °C TJ = 125 °C 15 TJ = 75 °C 10 TJ = 25 °C TJ = -55 °C 5 0 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 100 200 300 400 500 600 700 800 900 ReverseTVoltage, ˚C VR (V) C FowardTVoltage, ˚C VF (V) C Figure 1. Forward Characteristics 70 Figure 2. Reverse Characteristics 1000 Conditions: TJ = 25 °C 60 Conditions: TJ = 25 °C Ftest = 1 MHz Vtest = 25 mV 900 50 700 Capacitance C (pF) (pF) (nC) QC (nC) CapacitiveQCharge, C 800 40 30 20 500 400 300 200 10 100 0 0 100 200 300 400 500 600 700 ReverseVVoltage, (V) VR (V) R Figure 3. Total Capacitance Charge vs. Reverse Voltage 3 600 CPW2-0650-S016B Rev. -, 09-2016 0 0 1 10 100 (V) VR (V) ReverseVVoltage, R Figure 4. Capacitance vs. Reverse Voltage 1000 Chip Dimensions A B A symbol dimension mm inch A 2.41 0.061 B 2.02 0.051 B Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Related Links • • • Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2 SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i Copyright © 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 4 CPW2-0650-S016B Rev. -. 09-2016 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power