JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU04N70B N-Channel Power MOSFET DESCRIPTION TO-252-2L The CJU04N70B is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche. This high speed switching power MOSFET is usually used in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. APPLICATIONS Power supplies PWM motor controls High efficient DC to DC converters and bridge circuits MARKING JCET LOGO CJU04N70B= Part No. XXX=Date Code MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Parameter Symbol Limit Unit Drain-Source Voltage VDS 700 V Gate-Source Voltage VGS ±30 V Continuous Drain Current ID 4.4 A Pulsed Drain Current IDM 17.6 A EAS(1) 250 mJ PD 1.25 W RθJA 100 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature Range Tstg -55 ~+150 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10s) TL 260 ℃ Single Pulsed Avalanche Energy Power Dissipation Thermal Resistance from Junction to Ambient (1).EAS condition: VDD=50V,L=20mH, RG=25Ω, Starting TJ = 25°C www.cj-elec.com 1 A-2,Jun,2015 ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit V(BR) DSS VGS = 0V, ID =250µA 700 Zero gate voltage drain current IDSS VDS =700V, VGS =0V 10 µA Gate-body leakage current IGSS VDS =0V, VGS =±30V ±100 nA Gate-threshold voltage VGS(th) VDS =VGS, ID =250µA 4 V Static drain-source on-sate resistance RDS(on) VGS =10V, ID =2.2A 2.4 2.8 Ω 520 670 70 90 8 11 60 80 Off characteristics Drain-source breakdown voltage V On characteristics (note1) 2 Dynamic characteristics (note 2) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss VDS =25V,VGS =0V, f =1MHz pF Switching characteristics (note 1，2) Total gate charge Qg VDS=560V, VGS=10V, nC Gate-source charge Qgs Gate-drain charge Qgd 25 Turn-on delay time td(on) 40 60 Turn-on rise time Turn-off delay time Turn-off fall time ID=4.4A 20 tr VDD=350V,ID=4.4A, 60 100 td(off) VGS=10V,RG=25Ω, 115 175 70 110 tf ns Drain-Source Diode Characteristics Drain-source diode forward voltage(note1) Continuous drain-source diode forward current Pulsed drain-source diode forward current VSD VGS =0V, IS=4.4A 1.4 V IS 4.4 A ISM 17.6 A Notes: 1. Pulse Test : Pulse Width≤300µs, duty cycle ≤2%. 2. Guaranteed by design, not subject to production testing. www.cj-elec.com 2 A-2,Jun,2015 Typical Characteristics Transfer Characteristics Output Characteristics 5.0 1.75 VGS= 6V Pulsed 4.5 1.50 VGS= 5.5V (A) 4.0 3.0 DRAIN CURRENT DRAIN CURRENT 1.25 ID 3.5 ID (A) VDS=10V Pulsed 2.5 2.0 VGS= 5V 1.5 1.00 Ta=25℃ Ta=100℃ 0.75 0.50 1.0 0.25 VGS= 4.5V 0.5 0.0 VGS= 4V 0 10 5 15 20 25 DRAIN TO SOURCE VOLTAGE VDS 30 0.00 35 0 1 (V) 2 5.0 VGS 7 8 (V) 12 Pulsed Pulsed ID=2.2A 10 3.0 VGS=10V 2.5 2.0 1.5 RDS(ON) 3.5 8 ON-RESISTANCE ( ) 4.0 ( ) 6 5 Ta=25℃ 4.5 RDS(ON) 4 RDS(ON)—— VGS RDS(ON) —— ID ON-RESISTANCE 3 GATE TO SOURCE VOLTAGE 6 1.0 Ta=100℃ 4 Ta=25℃ 2 0.5 0.0 0.5 1.0 1.5 2.0 2.5 DRAIN CURRENT 3.0 ID 3.5 4.0 0 4.4 2 (A) 3 4 5 6 7 8 GATE TO SOURCE VOLTAGE VGS 9 10 (V) Threshold Voltage IS —— VSD 5 4.4 Pulsed 4 VTH Ta=25℃ Ta=100℃ 0.1 THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (V) 1 0.01 1E-3 0 200 400 600 SOURCE TO DRAIN VOLTAGE www.cj-elec.com 800 1000 ID=250uA 3 2 1 0 25 1200 VSD (mV) 50 75 JUNCTION TEMPERATURE 3 100 TJ 125 (℃ ) A-2,Jun,2015 Symbol A A1 B b c c1 D D1 E e e1 M N L L1 L2 V ĭ www.cj-elec.com Dimensions In Millimeters Max. Min. 2.200 2.380 0.000 0.100 0.800 1.400 0.710 0.810 0.460 0.560 0.460 0.560 6.500 6.700 5.130 5.460 6.000 6.200 2.286 TYP. 4.327 4.727 1.778REF. 0.762REF. 9.800 10.400 2.9REF. 1.400 1.700 4.830 REF. 4 Dimensions In Inches Min. Max. 0.087 0.094 0.000 0.004 0.031 0.055 0.028 0.032 0.018 0.022 0.018 0.022 0.256 0.264 0.202 0.215 0.236 0.244 0.090 TYP. 0.170 0.186 0.070REF. 0.018REF. 0.386 0.409 0.114REF. 0.055 0.067 0.190 REF. A-2,Jun,2015 To-252(4R)-2L Tape and Reel www.cj-elec.com 5 A-2,Jun,2015