Infineon BGA7M1N6E6327XTSA1 Infineonâ s new lte low noise amplifiers almost double smartphone data rate Datasheet

Product Brief
Infineon’s New LTE Low Noise Amplifiers
Almost Double Smartphone Data Rates
Improving the user experience by improving smartphone data rates by up to 96% is
the boast of Infineon for its LTE LNA (low noise amplifiers) and quad LNA banks.
The BGA7x1N6 and BGM7xxxx4L12 families provide a low noise figure, the exact gain
and high linearity needed to help smartphone designers overcome the challenges
of LTE or 4G which allows for data rates up to 300Mbit/s – compared to 56Mbit/s in
the latest UMTS (3G) release. However, the increasing complexity of the RF front end
results in more RF components (e.g. switches, diplexers and dividers) and leads to
increasing losses over the whole system and deterioration of the signal-to-noise ratio
(SNR). The distance between antenna and the RF transceiver leads to additional line
losses that also negatively affect SNR and therefore the data rate.
The LNAs and LNA banks are based on the company’s Silicon Germanium Carbon
(SiGe:C) chip technology and include built-in ESD protection of 2kV HBM.
They are located in the diversity and main antenna path of the phone and push smartphone data rates’ limits 96% higher than in solutions without LNAs. High linearity
assures optimal signal reception even in conditions of poorly isolated antenna and
long line losses between antenna and transceiver. The typical sensitivity improvement
of 3.4dB compared to systems without LNAs is achieved in devices with a package size
70% smaller (1.1 x 0.7mm2) than previously available LNAs and 61% smaller
(1.9 x 1.1mm2) than previously available LNA banks.
The products are also self-shielded to prevent parasitic interference and require only
one external component per LNA.
There are three LTE LNAs and seven quad LNA bank families to address the required
band configurations for different world regions, each letter in the series denotes a
different frequency band: L for the low, 0.7GHz to 1GHz band; M for mid, 1.7GHz to
2.2GHz band; and H for high, 2.3GHz to 2.7GHz band.
They are shipped in RoHS-compliant TSNP-6-2 or TSLP 12-4 plastic packages.
www.infineon.com/rfmmic
Key Features
„„ High linearity
„„ Best-in-class noise figure
„„ Low current consumption
„„ Supply voltage: 1.5V to 3.3V
„„ Ultra small
–– Single LNAs:
TSNP-6-2 leadless package
(footprint: 1.1 x 0.7mm2)
–– Quad LNA banks:
TSLP-12-4 leadless package
(footprint: 1.1 x 1.9mm2)
„„ B7HF Silicon Germanium Carbon
(SiGe:C) technology
„„ RF output internally matched
to 50Ω
„„ Low external component count
„„ 2kV HBM ESD protection
„„ Pb-free (RoHS compliant) package
Applications
„„ Smartphones
„„ Tablets
„„ Datacards
„„ M2M communication
Product Brief
Infineon’s New LTE Low Noise Amplifiers
Almost Double Smartphone Data Rates
LTE LNAs
Diversity /Main
Antenna
BGA7H1N6
B7
B40
BGA7M1N6
B1
B2
B3
RFIC
B5, 8
B17
B29
BGA7L1N6
Long Coax Lines
High Insertion Loss
RFIN LNA 1
RFIN LNA 2
L1
L2
11 C2
C2 = 0/2.8V
C3 = 0/2.8V
RFIN LNA 4
9 I2
10 C1
C1 = 0/2.8V
RFIN LNA 3
8
I1
L3
O2 6
Biasing &
Logic
Circuitry
© 2014 Infineon Technologies AG.
All Rights Reserved.
Visit us:
www.infineon.com
Order Number: B132-H9894-X-X-7600
Date: 04 / 2014
VCC 5
12 C3
O3 4
1 I3
O4 3
RFOUT LNA 1
RFOUT LNA 2
VCC = 2.8V
C1
(optional)
RFOUT LNA 3
RFOUT LNA 4
I4
2
L4
Ordering no. (SP numbers)
„„ BGM7LLHM4L12: BGM7LLHM4L12E6327XTSA1
„„ BGM7MLLH4L12: BGM7MLLH4L12E6327XTSA1
„„ BGM7MLLM4L12: BGM7MLLM4L12E6327XTSA1
„„ BGM7LMHM4L12: BGM7LMHM4L12E6327XTSA1
„„ BGM7HHMH4L12: BGM7HHMH4L12E6327XTSA1
Published by
Infineon Technologies AG
85579 Neubiberg, Germany
O1 7
„„ BGA7L1N6: BGA7L1N6E6327XTSA1
„„ BGA7M1N6: BGA7M1N6E6327XTSA1
„„ BGA7H1N6: BGA7H1N6E6327XTSA1
Attention please!
The information given in this document shall in no event
be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples
or hints given herein, any typical values stated herein and/
or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation
warranties of non-infringement of intellectual property
rights of any third party.
Information
For further information on technology, delivery terms and
conditions and prices please contact your nearest Infineon
Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain
dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only
be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause
the failure of that life-support device or system, or to affect
the safety or effectiveness of that device or system. Life
support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and
sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons
may be endangered.
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