Fairchild FDP8443 F085 N-channel powertrench mosfet Datasheet

FDP8443_F085
®
N-Channel PowerTrench MOSFET
40V, 80A, 3.5mΩ
Features
Applications
„ Typ rDS(on) = 2.7mΩ at VGS = 10V, ID = 80A
„ Automotive Engine Control
„ Typ Qg(10) = 142nC at VGS = 10V
„ Powertrain Management
„ Low Miller Charge
„ Solenoid and Motor Drivers
„ Low Qrr Body Diode
„ Electronic Steering
„ UIS Capability (Single Pulse and Repetitive Pulse)
„ Integrated Starter / Alternator
„ Qualified to AEC Q101
„ Distributed Power Architecture and VRMs
„ RoHS Compliant
„ Primary Switch for 12V Systems
©2009 Fairchild Semiconductor Corporation
FDP8443_F085 Rev. A
1
www.fairchildsemi.com
FDP8443_F085 N-Channel PowerTrench® MOSFET
March 2009
Symbol
Drain to Source Voltage
VDSS
VGS
Parameter
Ratings
40
Units
V
Gate to Source Voltage
±20
V
Drain Current Continuous (TC < 144oC, VGS = 10V)
80
Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 62oC/W)
ID
20
Pulsed
EAS
Single Pulse Avalanche Energy
PD
A
See Figure 4
(Note 1)
531
mJ
Power Dissipation
188
W
Derate above 25oC
1.25
W/oC
-55 to +175
oC
0.8
oC/W
62
o
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
RθJC
Thermal Resistance Junction to Case
RθJA
Thermal Resistance Junction to Ambient
(Note 2)
C/W
Package Marking and Ordering Information
Device Marking
Device
FDP8443
FDP8443_F085
Package
Reel Size
Tape Width
Quantity
Tube
N/A
50 units
TO-220AB
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
40
-
-
-
V
-
1
-
-
250
VGS = ±20V
-
-
±100
nA
VGS = VDS, ID = 250μA
2
2.8
4
V
ID = 80A, VGS= 10V
-
2.7
3.5
ID = 80A, VGS= 10V,
TJ = 175oC
-
4.7
6.1
VDS = 25V, VGS = 0V,
f = 1MHz
-
9310
-
pF
-
800
-
pF
pF
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250μA, VGS = 0V
VDS = 32V,
VGS = 0V
TC = 150oC
μA
On Characteristics
VGS(th)
rDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
mΩ
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
-
510
-
RG
Gate Resistance
VGS = 0.5V, f = 1MHz
-
0.9
-
Ω
Qg(TOT)
Total Gate Charge at 10V
VGS = 0 to 10V
-
142
185
nC
VGS = 0 to 2V
Qg(TH)
Threshold Gate Charge
Qgs
Gate to Source Gate Charge
Qgs2
Gate Charge Threshold to Plateau
Qgd
Gate to Drain “Miller“ Charge
FDP8443_F085 Rev. A
2
VDD = 20V
ID = 35A
Ig = 1mA
-
17.5
23
nC
-
36
-
nC
-
18.8
-
nC
-
32
-
nC
www.fairchildsemi.com
FDP8443_F085 N-Channel PowerTrench® MOSFET
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Switching Characteristics (VGS = 10V)
ton
Turn-On Time
-
-
58
ns
td(on)
Turn-On Delay Time
-
18.4
-
ns
tr
Rise Time
-
17.9
-
ns
td(off)
Turn-Off Delay Time
-
55
-
ns
tf
Fall Time
-
13.5
-
ns
toff
Turn-Off Time
-
-
109
ns
ISD = 35A
-
0.8
1.25
ISD = 15A
-
0.8
1.0
VDD = 20V, ID = 35A
VGS = 10V, RGS = 2Ω
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ISD = 35A, dISD/dt = 100A/μs
V
-
42
55
ns
-
48
62
nC
Notes:
1: Starting TJ = 25oC, L = 0.26mH, IAS = 64A.
2: Pulse width = 100s.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
FDP8443_F085 Rev. A
3
www.fairchildsemi.com
FDP8443_F085 N-Channel PowerTrench® MOSFET
Electrical Characteristics TC = 25oC unless otherwise noted
200
1.0
160
ID, DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
1.2
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
TC, CASE TEMPERATURE(oC)
Figure 1. Normalized Power Dissipation vs Case
Temperature
NORMALIZED THERMAL
IMPEDANCE, ZθJC
2
1
VGS = 10V
120
80
40
0
25
175
CURRENT LIMITED
BY PACKAGE
50
75
100
125
150
TC, CASE TEMPERATURE(oC)
175
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
DUTY CYCLE - DESCENDING ORDER
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
PDM
t1
t2
0.01
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
SINGLE PULSE
1E-3
-5
10
-4
-3
10
-2
-1
0
10
10
10
t, RECTANGULAR PULSE DURATION(s)
1
10
10
Figure 3. Normalized Maximum Transient Thermal Impedance
5000
VGS = 10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
IDM, PEAK CURRENT (A)
1000
CURRENT AS FOLLOWS:
175 - TC
I = I2
150
100
SINGLE PULSE
10
-5
10
-4
10
-3
-2
-1
10
10
10
t, RECTANGULAR PULSE DURATION(s)
0
10
1
10
Figure 4. Peak Current Capability
FDP8443_F085 Rev. A
4
www.fairchildsemi.com
FDP8443_F085 N-Channel PowerTrench® MOSFET
Typical Characteristics
500
1000
IAS, AVALANCHE CURRENT (A)
ID, DRAIN CURRENT (A)
10us
100
100us
100
10
LIMITED
BY PACKAGE
1ms
1
SINGLE PULSE
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
0.1
1
10ms
TJ = MAX RATED
o
TC = 25 C
STARTING TJ = 25oC
10
STARTING TJ = 150oC
DC
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
1
0.01
100
0.1
1
10
100
1000 5000
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 5. Forward Bias Safe Operating Area
200
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
VGS = 10V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
160
Figure 6. Unclamped Inductive Switching
Capability
VDD = 5V
120
TJ = 175oC
80
TJ = 25oC
TJ = -55oC
40
0
2.0
2.5
3.0
3.5
4.0
4.5
160
VGS = 5V
VGS = 4.5V
120
80
40
0
5.0
VGS = 4V
0
VGS, GATE TO SOURCE VOLTAGE (V)
rDS(on), DRAIN TO SOURCE
ON-RESISTANCE (mΩ)
ID = 80A
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
60
TJ = 25oC
o
40
TJ = 175 C
20
0
3
4
5
6
7
8
9
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
FDP8443_F085 Rev. A
1
2
3
4
VDS, DRAIN TO SOURCE VOLTAGE (V)
5
Figure 8. Saturation Characteristics
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
Figure 7. Transfer Characteristics
80
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
1.8
1.6
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
1.4
1.2
1.0
0.8
0.6
-80
ID = 80A
VGS = 10V
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE(oC)
200
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
5
www.fairchildsemi.com
FDP8443_F085 N-Channel PowerTrench® MOSFET
Typical Characteristics
1.15
VGS = VDS
ID = 250μA
1.10
1.0
1.05
0.8
1.00
0.6
0.4
-80
0.95
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE(oC)
0.90
-80
200
20000
Ciss
10000
Coss
1000
Crss
f = 1MHz
VGS = 0V
100
0.1
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
50
Figure 13. Capacitance vs Drain to Source
Voltage
FDP8443_F085 Rev. A
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
VGS, GATE TO SOURCE VOLTAGE(V)
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
CAPACITANCE (pF)
ID = 1mA
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
NORMALIZED GATE
THRESHOLD VOLTAGE
1.2
10
ID = 35A
VDD = 15V
8
VDD = 20V
6
VDD = 25V
4
2
0
0
20
40
60
80 100 120
Qg, GATE CHARGE(nC)
140
160
Figure 14. Gate Charge vs Gate to Source Voltage
6
www.fairchildsemi.com
FDP8443_F085 N-Channel PowerTrench® MOSFET
Typical Characteristics
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
EZSWITCH™ *
™
®
tm
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FlashWriter® *
FPS™
F-PFS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
™
Saving our world, 1mW /W /kW at a time™
SmartMax™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
®
®
tm
PDP SPM™
Power-SPM™
PowerTrench®
PowerXS™
tm
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
μSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
The Power Franchise®
* EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Farichild’s Anti-Counterfeiting Policy is also stated on our external website,
www.fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I38
FDP8443_F085 Rev. A
7
www.fairchildsemi.com
FDP8443_F085 N-Channel PowerTrench® MOSFET
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
Similar pages