MSFC60 Thyristor/Diode Modules 800 to 1600V 60Amp VRRM / VDRM IFAV / ITAV Applications y y y y Circuit Power Converters Lighting Control DC Motor Control and Drives Heat and temperature control Features y y y y y y International standard package High Surge Capability Glass passivated chip Simple Mounting Heat transfer through aluminum oxide DBC ceramic isolated metal baseplate UL E243882 approved Module Type TYPE VRRM/VDRM VRSM MSFC60-08 MSFC60-12 MSFC60-16 800V 1200V 1600V 900V 1300V 1700V ◆Diode Maximum Ratings Symbol Item Conditions ID Output Current(D.C.) Tc=85℃ IFSM Surge forward current t=10mS Tvj =45℃ i2t Isolation Breakdown Voltage(R.M.S) Tvj Tstg Operating Junction Temperature Storage Temperature Mounting Torque Ms Weight Rth(c-s) 60 A A 11000 A2s 3000 V -40 to +125 -40 to +125 a.c.50HZ;r.m.s.;1min To terminals(M5) 3±15% ℃ ℃ Nm To heatsink(M6) 5±15% Nm 100 g Values Units Junction to Case 0.29 ℃/W Case to Heatsink 0.10 ℃/W Module（Approximately） Thermal Characteristics Symbol Item Rth(j-c) Thermal Impedance, max. Thermal Impedance, max. Units 1500 Circuit Fusing Consideration Visol Mt Values Conditions Electrical Characteristics Symbol Item VFM Forward Voltage Drop, max. IRRM Repetitive Peak Reverse Current, max. Document Number: MSFC60 Dec.20, 2010 Conditions T=25℃ IF =200A Tvj =25℃ VRD=VRRM Tvj =125℃ VRD=VRRM Values Min. Typ. ≤0.5 ≤6 Max. 1.65 Units V mA mA www.smsemi.com 1 MSFC60 ◆Thyristor Maximum Ratings Symbol Item Conditions Values Units 60 A TVJ =45℃ t=10ms, sine TVJ =125℃ t=10ms, sine 1500 1250 A Circuit Fusing Consideration TVJ =45℃ t=10ms, sine TVJ =125℃ t=10ms, sine 11000 8000 A2s Isolation Breakdown Voltage(R.M.S) a.c.50HZ;r.m.s.;1min 3000 V -40 to +125 ℃ -40 to +125 3±15% 5±15% ℃ Nm Nm ITAV Average On-State Current Sine 180o;Tc=85℃ ITSM Surge On-State Current i2t Visol Tvj Tstg Mt Ms Operating Junction Temperature Storage Temperature Mounting Torque To terminals(M5) To heatsink(M6) di/dt Critical Rate of Rise of On-State Current TVJ= TVJM , 2/3VDRM ,IG =500mA Tr<0.5us,tp>6us 150 A/us dv/dt Critical Rate of Rise of Off-State Voltage, min. TJ=TVJM ,2/3VDRM linear voltage rise 1000 V/us a Maximum allowable acceleration 50 m/s2 Values Units Junction to Case 0.57 ℃/W Case to Heatsink 0.20 ℃/W Thermal Characteristics Symbol Item Thermal Impedance, max. Rth(j-c) Rth(c-s) Thermal Impedance, max. Conditions Electrical Characteristics Symbol Item VTM Peak On-State Voltage, max. Repetitive Peak Reverse Current, max. / Repetitive Peak Off-State Current, max. Conditions Values Min. Typ. Max. Units 1.65 V TVJ=TVJM ,VR=VRRM ,VD= VDRM 15 mA On state threshold voltage For power-loss calculations only (TVJ =125℃) 0.9 V Value of on-state slope resistance. max TVJ =TVJM 3.5 mΩ VGT Gate Trigger Voltage, max. TVJ =25℃ , VD =6V 3.0 V IRRM/IDRM VTO rT T=25℃ IT =200A IGT Gate Trigger Current, max. TVJ =25℃ , VD =6V 150 mA VGD Non-triggering gate voltage, max. TVJ=125℃,VD =2/3VDRM 0.25 V IGD Non-triggering gate current, max. TVJ =125℃, VD =2/3VDRM 6 mA IL Latching current, max. TVJ =25℃ , RG = 33 Ω 300 600 mA IH Holding current, max. TVJ =25℃ , VD =6V 150 250 mA tgd Gate controlled delay time TVJ=25℃, IG=1A, diG/dt=1A/us 1 us tq Circuit commutated turn-off time TVJ =TVJM 80 us Document Number: MSFC60 Dec.20, 2010 www.smsemi.com 2 MSFC60 Performance Curves 90 100 A sin.180 W rec.120 72 DC 75 DC rec.60 sin.180 54 rec.120 rec.30 50 rec.60 36 rec.30 25 18 PTAV ITAVM 0 0 ITAV 25 25 A 75 0 0 Tc Fig1. Power dissipation 50 100 ℃ 130 Fig2.Forward Current Derating Curve 2000 1.0 50HZ A ℃/ W Zth(j-S) Zth(j-C) 0.5 0 0.001 t 0.01 0.1 1 10 S 100 1000 0 Fig3. Transient thermal impedance 100 ms 1000 Fig4. Max Non-Repetitive Forward Surge Current 250 A 10 Typ. 200 150 max. 100 25 25℃ - - -125℃ IT 0 0 VTM 0.5 1.0 1.5 2.0 V 2.5 Fig5. Forward Characteristics Document Number: MSFC60 Dec.20, 2010 www.smsemi.com 3 MSFC60 100 1/2·MSFC60 V 20V;20Ω 10 VGT ∧ 1 VG Tvj PG(tp) -40℃ 25℃ 125℃ IGT VGD125℃ IGD125℃ 0.1 0.001 IG 0.01 0.1 1 10 A 100 Fig6. Gate trigger Characteristics Package Outline Information CASE: F1 × Dimensions in mm Document Number: MSFC60 Dec.20, 2010 www.smsemi.com 4