ON NTMFS4C032NT1G Power mosfet Datasheet

NTMFS4C032N
Power MOSFET
30 V, 38 A, Single N−Channel, SO−8 FL
Features
•
•
•
•
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• CPU Power Delivery
• DC−DC Converters
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V(BR)DSS
RDS(ON) MAX
ID MAX
7.35 mW @ 10 V
30 V
38 A
11.15 mW @ 4.5 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Symbol
Value
Unit
VDSS
30
V
VGS
±20
V
ID
13.0
A
Continuous Drain
Current RqJA
(Note 1)
TA = 25°C
Power Dissipation
RqJA (Note 1)
TA = 25°C
PD
2.46
W
Continuous Drain
Current RqJA ≤ 10 s
(Note 1)
TA = 25°C
ID
19.1
A
Power Dissipation
RqJA ≤ 10 s (Note 1)
Continuous Drain
Current RqJA
(Note 2)
TA = 80°C
PD
5.32
W
TA = 25°C
ID
7.2
A
TA = 25°C
Continuous Drain
Current RqJC
(Note 1)
TC = 25°C
Power Dissipation
RqJC (Note 1)
TC = 25°C
MARKING
DIAGRAM
5.4
PD
ID
TC =80°C
TA = 25°C, tp = 10 ms
1
0.75
W
38
A
29
PD
21.6
W
A
IDM
106
IDmax
70
A
TJ,
TSTG
−55 to
+150
°C
IS
19
A
Drain to Source DV/DT
dV/dt
7.0
V/ns
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VGS = 10 V, IL = 21 Apk,
L = 0.1 mH, RGS = 25 W) (Note 3)
EAS
22
mJ
TA = 25°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
°C
260
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. This is the absolute maximum rating. Parts are 100% tested at TJ = 25°C,
VGS = 10 V, IL = 15 Apk, EAS = 11 mJ.
© Semiconductor Components Industries, LLC, 2016
August, 2016 − Rev. 1
N−CHANNEL MOSFET
D
TA = 80°C
Current Limited by Package
S (1,2,3)
14.3
TA = 25°C
Power Dissipation
RqJA (Note 2)
Pulsed Drain Current
G (4)
9.7
TA = 80°C
Steady
State
D (5−8)
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
A
Y
W
ZZ
S
S
S
G
D
4C032
AYWZZ
D
D
= Assembly Location
= Year
= Work Week
= Lot Traceabililty
ORDERING INFORMATION
Package
Shipping†
NTMFS4C032NT1G
SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NTMFS4C032NT3G
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTMFS4C032N/D
NTMFS4C032N
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Junction−to−Case (Drain)
Parameter
RqJC
5.8
Junction−to−Ambient – Steady State (Note 4)
RqJA
50.8
Junction−to−Ambient – Steady State (Note 5)
RqJA
166.6
Junction−to−Ambient – (t ≤ 10 s) (Note 4)
RqJA
23.5
Unit
°C/W
4. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
5. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain−to−Source Breakdown Voltage
(transient)
V(BR)DSSt
VGS = 0 V, ID(aval) = 6.1 A,
Tcase = 25°C, ttransient = 100 ns
34
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
V
V
14.9
VGS = 0 V,
VDS = 24 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
±100
nA
2.1
V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
1.3
VGS(TH)/TJ
RDS(on)
4.8
mV/°C
VGS = 10 V
ID = 30 A
6.11
7.35
VGS = 4.5 V
ID = 12 A
9.29
11.15
Forward Transconductance
gFS
VDS = 1.5 V, ID = 15 A
Gate Resistance
RG
TA = 25°C
40
0.3
1.0
mW
S
2.0
W
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
770
VGS = 0 V, f = 1 MHz, VDS = 15 V
443
pF
127
Capacitance Ratio
CRSS/CISS
Total Gate Charge
QG(TOT)
7.8
Threshold Gate Charge
QG(TH)
1.4
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
3.7
Gate Plateau Voltage
VGP
3.6
V
15.2
nC
Total Gate Charge
VGS = 0 V, VDS = 15 V, f = 1 MHz
VGS = 4.5 V, VDS = 15 V; ID = 30 A
QG(TOT)
VGS = 10 V, VDS = 15 V; ID = 30 A
0.165
2.9
nC
SWITCHING CHARACTERISTICS (Note 7)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
9.0
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
35
13
5.0
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
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2
ns
NTMFS4C032N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 7)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
6.0
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
26
ns
16
3.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.82
TJ = 125°C
0.69
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 10 A
1.1
V
23.4
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
QRR
12.1
11.3
9.7
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
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3
ns
nC
NTMFS4C032N
TYPICAL CHARACTERISTICS
10 V
70
6.5 V
TJ = 25°C
ID, DRAIN CURRENT (A)
60
60
4.2 V
50
4.0 V
3.8 V
40
3.6 V
30
3.4 V
20
3.2 V
10
2.8 V
0
1
3
2
40
30
TJ = 125°C
20
TJ = 25°C
TJ = −55°C
0
5
4
0
2.0
2.5
3.0
3.5
4.0
ID = 30 A
0.011
0.010
0.009
0.008
0.007
0.006
4.0
5.0
6.0
7.0
8.0
9.0
VGS, GATE−TO−SOURCE VOLTAGE (V)
10
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
0.012
4.5 5.0
0.022
0.020
TJ = 25°C
0.018
0.016
VGS = 4.5 V
0.014
0.012
0.010
VGS = 10 V
0.008
0.006
10
20
30
40
50
60
70
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. VGS
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.7
10000
VGS = 0 V
ID = 30 A
VGS = 10 V
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.5
Figure 1. On−Region Characteristics
0.013
1.5
1.0
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.014
1.6
0.5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.015
3.0
50
10
3.0 V
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
VDS = 5 V
4.5 V
ID, DRAIN CURRENT (A)
70
1.4
1.3
1.2
1.1
1.0
TJ = 150°C
1000
TJ = 125°C
100
TJ = 85°C
0.9
0.8
0.7
−50
10
−25
0
25
50
75
100
125
150
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
30
NTMFS4C032N
TYPICAL CHARACTERISTICS
VGS = 0 V
TJ = 25°C
C, CAPACITANCE (pF)
900
Ciss
800
VGS, GATE−TO−SOURCE VOLTAGE (V)
1000
700
600
Coss
500
400
300
200
Crss
100
0
0
5
10
15
20
25
6
5
Qgd
Qgs
4
TJ = 25°C
VDD = 15 V
VGS = 10 V
ID = 30 A
3
2
1
0
0
4
2
6
8
10
12
14
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
16
30
VGS = 0 V
IS, SOURCE CURRENT (A)
t, TIME (ns)
7
Qg, TOTAL GATE CHARGE (nC)
tf
td(off)
tr
100
10
td(on)
1
1
10
25
20
15
TJ = 25°C
TJ = 125°C
10
5
0
100
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
10 ms
100 ms
10
1 ms
10 ms
1
0 V < VGS < 10 V
Single Pulse
TC = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
0.01
0.1
dc
1
10
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
RG, GATE RESISTANCE (W)
100
ID, DRAIN CURRENT (A)
9
8
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VDD = 15 V
ID = 15 A
VGS = 10 V
0.01
QT
10
30
1000
0.1
11
100
12
ID = 15 A
10
8
6
4
2
0
25
50
75
100
125
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
150
NTMFS4C032N
TYPICAL CHARACTERISTICS
100
R(t) (°C/W)
Duty Cycle = 50%
10 20%
10%
5%
1
2%
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.1
0.01
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Response
100
50
45
ID, DRAIN CURRENT (A)
40
GFS (S)
35
30
25
20
15
10
TA = 85°C
10
TA = 25°C
5
1
1.E−08
0
0
10
20
30
40
50
60
70
1.E−07
1.E−06
1.E−05
1.E−04 1.E−03
ID (A)
PULSE WIDTH (SECONDS)
Figure 14. GFS vs. ID
Figure 15. Avalanche Characteristics
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6
NTMFS4C032N
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE M
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
D
A
2
B
D1
2X
0.20 C
4X
E1
q
E
2
c
1
2
3
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
A1
4
TOP VIEW
C
SEATING
PLANE
DETAIL A
0.10 C
A
0.10 C
SIDE VIEW
DETAIL A
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
RECOMMENDED
SOLDERING FOOTPRINT*
2X
0.495
0.10
b
C A B
0.05
c
MILLIMETERS
MIN
NOM
MAX
1.10
0.90
1.00
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.00
5.30
5.15
4.70
4.90
5.10
3.80
4.00
4.20
6.00
6.30
6.15
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.575
0.71
1.20
1.35
1.50
0.51
0.575
0.71
0.125 REF
3.00
3.40
3.80
0_
−−−
12 _
4.560
2X
8X
1.530
e/2
e
L
1
4
3.200
4.530
K
E2
PIN 5
(EXPOSED PAD)
L1
1.330
2X
M
0.905
1
0.965
G
D2
4X
BOTTOM VIEW
1.000
4X 0.750
1.270
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NTMFS4C032N/D