LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTC113ZET1G S-LDTC113ZET1G • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy. 3 2 1 SC-89 • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 1 BASE zAbsolute maximum ratings (Ta=25°C) Parameter Limits Symbol VCC 50 V Input voltage VIN −5 to +10 V IO 100 IC(Max.) 100 Output current 3 COLLECTOR R2 2 EMITTER Unit LDTC113ZET1G Supply voltage R1 mA Power dissipation PD 200 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C mW DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTC113ZET1G S-LDTC113ZET1G N7 1 10 3000/Tape & Reel LDTC113ZET3G S-LDTC113ZET3G N7 1 10 10000/Tape & Reel zElectrical characteristics (Ta=25°C) Parameter Input voltage Output voltage Input current Symbol Min. Typ. Max. VI(off) − − 0.3 VI(on) 3 − − VO(on) − 0.1 0.3 V II − − 7.2 mA VI=5V Unit Conditions VCC=5V, IO=100µA V VO=0.3V, IO=20mA IO/II=10mA/0.5mA IO(off) − − 0.5 µA VCC=50V, VI=0V DC current gain GI 33 − − − VO=5V, IO=5mA Input resistance R1 0.7 1 1.3 kΩ Resistance ratio R2/R1 8 10 12 − − 250 − MHz Output current Transition frequency fT ∗ − − VCE=10V, IE= −5mA, f=100MHz ∗ Characteristics of built-in transistor Rev.O 1/3 LESHAN RADIO COMPANY, LTD. LDTC113ZET1G ;S-LDTC113ZET1G z Electrical characteristic curves 100 10m 5m VO=0.3V OUTPUT CURRENT : Io (A) 20 10 5 Ta=−40°C 25°C 100°C 2 1 500m VCC=5V 2m 1m 500µ Ta=100°C 25°C −40°C 200µ 100µ 50µ 20µ 10µ 5µ 200m 100m 100µ 200µ 500µ 1m 2m 5m 10m 20m 2µ 1µ 0 50m 100m OUTPUT CURRENT : IO (A) 1k 0.5 1.0 1.5 2.0 2.5 3.0 INPUT VOLTAGE : VI (off) (V) Fig.1 Input voltage vs. output current (ON characteristics) Fig.2 Output current vs. input voltage (OFF characteristics) 1 VO=5V 500 lO/lI=20 500m Ta=100°C 25°C −40°C 200 100 OUTPUT VOLTAGE : VO (on) (V) DC CURRENT GAIN : GI INPUT VOLTAGE : VI (on) (V) 50 50 20 10 5 2 Ta=100°C 25°C −40°C 200m 100m 50m 20m 10m 5m 2m 1 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current Rev.O 2/3 LESHAN RADIO COMPANY, LTD. LDTC113ZET1G ;S-LDTC113ZET1G SC-89 NOTES: 1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2.CONTROLLING DIMENSION: MILLIMETERS 3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4.463C-01 OBSOLETE, NEW STANDARD 463C-02. Rev.O 3/3