IGBT Highspeed5FASTIGBTinTRENCHSTOPTM5technologycopackedwithRAPID1 fastandsoftantiparalleldiode IKW50N65F5A 650VDuoPackIGBTanddiode Highspeedswitchingseriesfifthgeneration Datasheet IndustrialPowerControl IKW50N65F5A Highspeedswitchingseriesfifthgeneration Highspeed5FASTIGBTinTRENCHSTOPTM5technologycopackedwith RAPID1fastandsoftantiparalleldiode FeaturesandBenefits: C HighspeedF5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowgatechargeQG •IGBTcopackedwithRAPID1fastandsoftantiparalleldiode •Maximumjunctiontemperature175°C •QualifiedaccordingtoAEC-Q101 •Greenpackage(RoHScompliant) •CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G E Applications: •Batterycharger •DC/DCconverter 1 2 3 Packagepindefinition: •Pin1-gate •Pin2&backside-collector •Pin3-emitter KeyPerformanceandPackageParameters Type IKW50N65F5A VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 650V 50A 1.66V 175°C K50EF5A PG-TO247-3 2 Rev.2.1,2015-01-15 IKW50N65F5A Highspeedswitchingseriesfifthgeneration TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 3 Rev.2.1,2015-01-15 IKW50N65F5A Highspeedswitchingseriesfifthgeneration MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 650 V DCcollectorcurrent,limitedbyTvjmax TC=25°Cvaluelimitedbybondwire TC=100°C IC 80.0 53.5 A Pulsedcollectorcurrent,tplimitedbyTvjmax1) ICpuls 150.0 A Turn off safe operating area VCE≤650V,Tvj≤175°C,tp=1µs1) - 150.0 A Diodeforwardcurrent,limitedbyTvjmax TC=25°Cvaluelimitedbybondwire TC=100°C IF 40.0 27.0 A Diodepulsedcurrent,tplimitedbyTvjmax1) IFpuls 150.0 A Gate-emitter voltage TransientGate-emittervoltage(tp≤10µs,D<0.010) VGE ±20 ±30 V PowerdissipationTC=25°C PowerdissipationTC=100°C Ptot 270.0 136.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C 2) Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s °C 260 Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Parameter Characteristic Symbol Conditions Max.Value Unit IGBT thermal resistance, junction - case Rth(j-c) 0.55 K/W Diode thermal resistance, junction - case Rth(j-c) 1.50 K/W Thermal resistance junction - ambient Rth(j-a) 40 K/W 1) 2) Defined by design. Not subject to production test. Package not recommended for surface mount applications 4 Rev.2.1,2015-01-15 IKW50N65F5A Highspeedswitchingseriesfifthgeneration ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. 650 - - VGE=15.0V,IC=50.0A Tvj=25°C Tvj=125°C Tvj=175°C - 1.66 1.90 2.03 2.10 - - 1.54 1.52 1.49 1.80 - 3.2 4.0 4.8 V 40.0 1200.0 - µA StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA Collector-emitter saturation voltage VCEsat V V Diode forward voltage VF VGE=0V,IF=25.0A Tvj=25°C Tvj=125°C Tvj=175°C Gate-emitter threshold voltage VGE(th) IC=0.30mA,VCE=VGE Zero gate voltage collector current ICES VCE=650V,VGE=0V Tvj=25°C Tvj=175°C - Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=50.0A - 62.0 - S V ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 2800 - - 65 - - 11 - - 108.0 - nC - 13.0 - nH DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Internal emitter inductance measured 5mm (0.197 in.) from case LE VCE=25V,VGE=0V,f=1MHz VCC=520V,IC=50.0A, VGE=15V pF SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 21 - ns - 12 - ns - 156 - ns - 6 - ns - 0.49 - mJ - 0.14 - mJ - 0.63 - mJ IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=25°C, VCC=400V,IC=25.0A, VGE=0.0/15.0V, RG(on)=12.0Ω,RG(off)=12.0Ω, Lσ=30nH,Cσ=30pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. 5 Rev.2.1,2015-01-15 IKW50N65F5A Highspeedswitchingseriesfifthgeneration Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=25°C, VCC=400V,IC=6.0A, VGE=0.0/15.0V, RG(on)=12.0Ω,RG(off)=12.0Ω, Lσ=30nH,Cσ=30pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. - 19 - ns - 4 - ns - 173 - ns - 10 - ns - 0.10 - mJ - 0.03 - mJ - 0.13 - mJ - 77 - ns - 0.68 - µC - 15.5 - A - -258 - A/µs - 36 - ns - 0.28 - µC - 12.5 - A - -759 - A/µs DiodeCharacteristic,atTvj=25°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=25°C, VR=400V, IF=25.0A, diF/dt=1200A/µs Tvj=25°C, VR=400V, IF=6.0A, diF/dt=1200A/µs dirr/dt SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 21 - ns - 14 - ns - 191 - ns - 5 - ns - 0.68 - mJ - 0.25 - mJ - 0.93 - mJ - 18 - ns - 5 - ns - 229 - ns - 13 - ns - 0.18 - mJ - 0.06 - mJ - 0.24 - mJ IGBTCharacteristic,atTvj=150°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=150°C, VCC=400V,IC=25.0A, VGE=0.0/15.0V, RG(on)=12.0Ω,RG(off)=12.0Ω, Lσ=30nH,Cσ=30pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. Tvj=150°C, VCC=400V,IC=6.0A, VGE=0.0/15.0V, RG(on)=12.0Ω,RG(off)=12.0Ω, Lσ=30nH,Cσ=30pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. 6 Rev.2.1,2015-01-15 IKW50N65F5A Highspeedswitchingseriesfifthgeneration DiodeCharacteristic,atTvj=150°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=150°C, VR=400V, IF=25.0A, diF/dt=1200A/µs Tvj=150°C, VR=400V, IF=6.0A, diF/dt=1200A/µs dirr/dt 7 - 123 - ns - 1.47 - µC - 20.8 - A - -214 - A/µs - 65 - ns - 0.71 - µC - 19.0 - A - -462 - A/µs Rev.2.1,2015-01-15 IKW50N65F5A 270 90 240 80 210 70 IC,COLLECTORCURRENT[A] Ptot,POWERDISSIPATION[W] Highspeedswitchingseriesfifthgeneration 180 150 120 90 60 50 40 30 60 20 30 10 0 25 50 75 100 125 150 0 175 25 TC,CASETEMPERATURE[°C] 150 135 135 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 120 VGE = 20V 18V 15V 90 12V 75 10V 60 8V 7V 45 6V 30 125 150 175 VGE = 20V 18V 105 15V 90 12V 75 10V 60 8V 7V 45 6V 30 5V 15 0 100 Figure 2. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tvj≤175°C) 150 105 75 TC,CASETEMPERATURE[°C] Figure 1. Powerdissipationasafunctionofcase temperature (Tvj≤175°C) 120 50 5V 15 0 1 2 3 4 0 5 VCE,COLLECTOR-EMITTERVOLTAGE[V] 0 1 2 3 4 5 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 3. Typicaloutputcharacteristic (Tvj=25°C) Figure 4. Typicaloutputcharacteristic (Tvj=150°C) 8 Rev.2.1,2015-01-15 IKW50N65F5A Highspeedswitchingseriesfifthgeneration 150 2.50 Tvj=25°C Tvj=150°C VCEsat,COLLECTOR-EMITTERSATURATION[V] 135 IC,COLLECTORCURRENT[A] 120 105 90 75 60 45 30 15 0 4 5 6 7 8 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 9 IC=6.25A IC=12.5A IC=25A IC=50A 0 VGE,GATE-EMITTERVOLTAGE[V] Figure 5. Typicaltransfercharacteristic (VCE=20V) 75 100 125 150 175 1000 td(off) tf td(on) tr t,SWITCHINGTIMES[ns] td(off) tf td(on) tr t,SWITCHINGTIMES[ns] 50 Figure 6. Typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature (VGE=15V) 1000 100 10 1 25 Tvj,JUNCTIONTEMPERATURE[°C] 0 30 60 90 120 10 1 150 IC,COLLECTORCURRENT[A] Figure 7. Typicalswitchingtimesasafunctionof collectorcurrent (inductiveload,Tvj=150°C,VCE=400V, VGE=0/15V,RG(on)=12Ω,RG(off)=12Ω,dynamic test circuit in Figure E) 100 5 15 25 35 45 55 65 75 85 RG,GATERESISTANCE[Ω] 9 Figure 8. Typicalswitchingtimesasafunctionofgate resistance (inductiveload,Tvj=150°C,VCE=400V, VGE=0/15V,IC=25A,dynamictestcircuitin Figure E) Rev.2.1,2015-01-15 IKW50N65F5A Highspeedswitchingseriesfifthgeneration 1000 5.5 VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] t,SWITCHINGTIMES[ns] td(off) tf td(on) tr 100 10 1 25 50 75 100 125 150 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 175 typ. min. max. 0 Tvj,JUNCTIONTEMPERATURE[°C] Figure 9. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=400V,VGE=0/15V, IC=25A,RG(on)=12Ω,RG(off)=12Ω,dynamictest circuit in Figure E) 75 100 125 150 2.4 Eoff Eon Ets 10 Eoff Eon Ets 2.2 9 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 50 Figure 10. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0.3mA) 11 8 7 6 5 4 3 2 1 0 25 Tvj,JUNCTIONTEMPERATURE[°C] 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 30 60 90 120 0.0 150 IC,COLLECTORCURRENT[A] Figure 11. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tvj=150°C,VCE=400V, VGE=0/15V,RG(on)=12Ω,RG(off)=12Ω, dynamic test circuit in Figure E) 5 15 25 35 45 55 65 75 85 RG,GATERESISTANCE[Ω] 10 Figure 12. Typicalswitchingenergylossesasa functionofgateresistance (inductiveload,Tvj=150°C,VCE=400V, VGE=0/15V,IC=25A,dynamictestcircuitin Figure E) Rev.2.1,2015-01-15 IKW50N65F5A Highspeedswitchingseriesfifthgeneration 1.0 1.2 Eoff Eon Ets 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 Eoff Eon Ets 1.1 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 0.9 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 25 50 75 100 125 150 0.0 200 175 Tvj,JUNCTIONTEMPERATURE[°C] 250 300 350 400 450 500 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 13. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=400V,VGE=0/15V, IC=25A,RG(on)=12Ω,RG(off)=12Ω,dynamic test circuit in Figure E) Figure 14. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tvj=150°C,VGE=0/15V, IC=25A,RG(on)=12Ω,RG(off)=12Ω,dynamic test circuit in Figure E) 16 VCC=130V VCC=520V Cies Coes Cres 1E+4 12 C,CAPACITANCE[pF] VGE,GATE-EMITTERVOLTAGE[V] 14 10 8 6 4 1000 100 10 2 0 0 20 40 60 80 100 1 120 QG,GATECHARGE[nC] 0 5 10 15 20 25 30 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 15. Typicalgatecharge (IC=50A) Figure 16. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) 11 Rev.2.1,2015-01-15 IKW50N65F5A Highspeedswitchingseriesfifthgeneration D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 single pulse 0.01 i: 1 2 3 4 5 ri[K/W]: 0.026138 0.118331 0.159109 0.181217 0.065204 τi[s]: 3.3E-5 2.5E-4 3.9E-3 0.044084 0.191225 0.001 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] 1 D = 0.5 0.2 0.1 0.02 0.01 single pulse 0.01 i: 1 2 3 4 ri[K/W]: 0.2723102 0.3217888 0.4470437 0.4588573 τi[s]: 1.3E-4 1.1E-3 0.0104944 0.1086427 0.001 1E-7 1 0.05 0.1 1E-6 tp,PULSEWIDTH[s] 1E-5 1E-4 0.001 0.01 0.1 1 tp,PULSEWIDTH[s] Figure 17. IGBTtransientthermalimpedance (D=tp/T) Figure 18. Diodetransientthermalimpedanceasa functionofpulsewidth (D=tp/T) 180 1.6 Tvj=25°C,IF=25A Tvj=150°C,IF=25A Qrr,REVERSERECOVERYCHARGE[µC] trr,REVERSERECOVERYTIME[ns] 160 140 120 100 80 60 40 500 700 900 1100 1300 1500 1700 1900 diF/dt,DIODECURRENTSLOPE[A/µs] 1.4 1.2 Tvj=25°C,IF=25A Tvj=150°C,IF=25A 1.0 0.8 0.6 0.4 0.2 500 700 900 1100 1300 1500 1700 1900 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 19. Typicalreverserecoverytimeasafunction ofdiodecurrentslope (VR=400V) 12 Figure 20. Typicalreverserecoverychargeasa functionofdiodecurrentslope (VR=400V) Rev.2.1,2015-01-15 IKW50N65F5A Highspeedswitchingseriesfifthgeneration 24 0 Tvj=25°C,IF=25A Tvj=150°C,IF=25A Tvj=25°C,IF=25A Tvj=150°C,IF=25A dIrr/dt,DIODEPEAKRATEOFFALLOFIrr[A/µs] Irr,REVERSERECOVERYCURRENT[A] 22 20 18 16 14 12 10 8 500 700 900 1100 1300 1500 1700 -50 -100 -150 -200 -250 -300 -350 -400 500 1900 diF/dt,DIODECURRENTSLOPE[A/µs] 700 900 1100 1300 1500 1700 1900 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 21. Typicalreverserecoverycurrentasa functionofdiodecurrentslope (VR=400V) Figure 22. Typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope (VR=400V) 75.0 2.2 Tvj=25°C Tvj=150°C 2.0 VF,FORWARDVOLTAGE[V] IF,FORWARDCURRENT[A] 62.5 50.0 37.5 25.0 12.5 0.0 IF=6.25A IF=12.5A IF=25A IF=50A 1.8 1.6 1.4 1.2 1.0 0.0 0.5 1.0 1.5 2.0 2.5 0.8 3.0 VF,FORWARDVOLTAGE[V] 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 23. Typicaldiodeforwardcurrentasafunction offorwardvoltage 13 Figure 24. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature Rev.2.1,2015-01-15 IKW50N65F5A Highspeedswitchingseriesfifthgeneration PG-TO247-3 14 Rev.2.1,2015-01-15 IKW50N65F5A Highspeedswitchingseriesfifthgeneration VGE(t) I,V 90% VGE t rr = t a + t b Q rr = Q a + Q b dIF/dt a 10% VGE b t Qa IC(t) Qb dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. 15 Rev.2.1,2015-01-15 IKW50N65F5A High speed switching series fifth generation Revision History IKW50N65F5A Revision: 2015-01-15, Rev. 2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2015-01-15 Final data sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] Published by Infineon Technologies AG 81726 Munich, Germany 81726 München, Germany © 2015 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 16 Rev. 2.1, 2015-01-15