Bruckewell Technology Corp., Ltd. MSF10N80A 800V N-Channel MOSFET FEATURES Originative New Design Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 46nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.05 Ω (Typ.) @VGS=10V 100% Avalanche Tested Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Value Unit Drain-Source Voltage 800 V Drain Current -Continuous (TC=25℃) 10 A Drain Current -Continuous (TC=100℃) 6 A IDM Drain Current -Pulsed 40 A VGS Gate-Source Voltage ±30 V EAS Single Pulsed Avalanche Energy 900 mJ IAR Avalanche Current 9 A EAR Repetitive Avalanche Energy 24 mJ dv/dt Peak Diode Recovery dv/dt 4.0 V/ns Power Dissipation (TC=25℃) 60 W 0.48 W/℃ –55 to + 150 ℃ 300 ℃ VDSS ID PD - Derate above 25℃ TJ,TSTG TL Parameter Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8'' from case for 5 seconds • Drain current limited by maximum junction temperature Bruckewell Technology Corp., Ltd. Thermal Resistance Characteristics Symbol Parameter Typ. Max. RθJC Junction-to-Case –– 4.0 RθJA Junction-to-Ambient –– 62.5 Electrical Characteristics Symbol Units ℃/W (Tc=25°C unless otherwise specified) Parameter Test Conditions Min Type Max Units VDS=VGS,ID=250μA 3.0 –– 5.0 V VGS=10V,ID=4.5A –– 1.05 1.4 Ω VGS=0 V , ID=250μA 800 –– –– V ID=250μA, Referenced to 25℃ –– 1.0 –– V/℃ VDS=800V , VGS= 0 V –– –– 10 μA VDS=640V , VC= 125℃ –– –– 100 μA VGS=30V , VDS=0 V –– –– 100 nA VGS=-30V , VDS=0 V –– –– –100 nA –– 2200 –– pF –– 180 –– pF –– 15 –– pF –– 60 -- ns On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance Off Characteristics BVDSS Drain-Source Breakdown Voltage △BVDSS Breakdown Voltage Temperature /△TJ Coefficient IDSS Zero Gate Voltage Drain Current IGSSF IGSSR Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=25V, VGS=0V, f=1.0MHz Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time VDS=400 V, ID=10A, –– 130 -- ns td(off) Turn-Off Delay Time RG=25Ω –– 110 -- ns –– 90 -- ns –– 46 -- nC –– 15 –– nC –– 20 –– nC tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=640V,ID=10A, VGS=10 V Bruckewell Technology Corp., Ltd. Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current –– –– 10 ISM Pulsed Source-Drain Diode Forward Current –– –– 40.0 VSD Source-Drain Diode Forward Voltage IS=10A, VGS=0V –– –– 1.5 V trr Reverse Recovery Time IS=10 A , VGS= 0V –– 730 –– ns Qrr Reverse Recovery Charge diF/dt=100A/μs –– 12 –– μC Notes; 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L=18mH, IAS=10A, VDD=5V, RG=25Ω, Starting TJ=25℃ 3. ISD≦10A, di/dt≦200A/μs,VDD≦BVDSS, Starting TJ=25℃ 4. Pulse Test: Pulse Width ≦ 300μs, Duty Cycle≦ 2% 5. Essentially Independent of Operating Temperature A Bruckewell Technology Corp., Ltd. • Characteristic Curves Figure 1. On Region Characteristics Figure 2. Transfer Characteristics Figure 3. On Resistance Variation vs Drain Current Figure 4. Body Diode Forward Voltage Variation with and Gate Voltage Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics Bruckewell Technology Corp., Ltd. • Characteristic Curves Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature Figure 11. Transient Thermal Response Curve Bruckewell Technology Corp., Ltd. Fig 12. Resistive Switching Test Circuit & Waveforms Fig 13. Gate Charge Test Circuit & Waveform Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms Bruckewell Technology Corp., Ltd. Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms Bruckewell Technology Corp., Ltd. Package Dimensions Dimensions in Millimeters