Preliminary Technical Information TrenchT2TM Power MOSFET IXTA300N04T2 IXTP300N04T2 VDSS ID25 = 40V = 300A Ω ≤ 2.5mΩ RDS(on) N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 40 V VGSM Transient ± 20 V 300 A 75 A ID25 TC = 25°C ILRMS Lead Current Limit, RMS IDM TC = 25°C, pulse width limited by TJM 900 A IA TC = 25°C 100 A EAS TC = 25°C 600 mJ PD TC = 25°C 480 W -55 ... +175 °C TJ TJM 175 °C Tstg -55 ... +175 °C 300 260 °C °C 1.13 / 10 Nm/lb.in. 2.5 3.0 g g TL Tsold 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Md Mounting torque (TO-220) Weight TO-263 TO-220 S (TAB) TO-220 (IXTP) G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Features z International standard packages 175°C Operating Temperature z Avalanche rated z High current handling capability z Low RDS(on) z Advantages z Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 40 VGS(th) VDS = VGS, ID = 250μA 2.0 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Notes 1, 2 © 2008 IXYS CORPORATION, All rights reserved z Easy to mount Space savings High power density V 4.0 V ±200 nA 5 μA TJ = 150°C z 150 μA 2.5 mΩ Applications • Synchronous Buck Converters • High Current Switching Power Supplies • Battery Powered Electric Motors • Resonant-mode power supplies • Electronics Ballast Application • Class D Audio Amplifiers DS100032(08/08) IXTA300N04T2 IXTP300N04T2 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 60A, Note 1 55 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 100A RG = 2Ω (External) tf Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 94 S 10.7 nF 1630 pF 263 pF 22 ns 17 ns 32 ns 13 ns 145 nC 44 nC 36 nC 0.31 °C/W RthJC RthCH TO-263 (IXTA) Outline TO-220 °C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 300 A ISM Repetitive, Pulse width limited by TJM 1000 A VSD IF = 100A, VGS = 0V, Note 1 1.3 V trr IF = 150A, VGS = 0V IRM -di/dt = 100A/μs VR = 20V QRM 53 ns 1.8 A 47.7 nC TO-220 (IXTP) Outline Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA300N04T2 IXTP300N04T2 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 350 300 VGS = 15V 10V 9V 8V 275 250 250 200 ID - Amperes ID - Amperes 225 VGS = 15V 10V 9V 8V 300 175 7V 150 125 100 6V 7V 200 150 6V 100 75 50 50 5V 25 5V 0 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.0 0.7 0.4 0.8 Fig. 3. Output Characteristics @ 150ºC 1.9 VGS = 10V 1.7 200 7V 175 150 6V 125 100 75 1.6 I D = 300A 1.5 I D = 150A 1.4 1.3 1.2 1.1 1.0 0.9 50 5V 0.8 25 0.7 0 0.6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -50 -25 0 VDS - Volts 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 150A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 90 2.2 2.1 VGS = 10V 2.0 External Lead Current Limit 80 15V - - - - 1.9 70 TJ = 175ºC 1.8 1.7 ID - Amperes RDS(on) - Normalized 2.4 1.8 RDS(on) - Normalized ID - Amperes 225 2.0 2.0 VGS = 15V 10V 9V 8V 250 1.6 Fig. 4. RDS(on) Normalized to ID = 150A Value vs. Junction Temperature 300 275 1.2 VDS - Volts VDS - Volts 1.6 1.5 1.4 1.3 60 50 40 30 1.2 TJ = 25ºC 1.1 20 1.0 10 0.9 0 0.8 0 50 100 150 200 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 250 300 350 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 200 IXTA300N04T2 IXTP300N04T2 Fig. 7. Input Admittance Fig. 8. Transconductance 180 160 160 140 120 120 g f s - Siemens ID - Amperes 140 TJ = - 40ºC 100 TJ = 150ºC 25ºC - 40ºC 80 60 25ºC 150ºC 100 80 60 40 40 20 20 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 20 40 60 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 100 120 140 160 180 Fig. 10. Gate Charge 10 320 VDS = 20V 9 280 I D = 150A 8 240 I G = 10mA 7 200 VGS - Volts IS - Amperes 80 ID - Amperes 160 120 TJ = 150ºC 6 5 4 3 80 2 TJ = 25ºC 40 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 1.3 20 40 60 80 100 120 140 QG - NanoCoulombs VSD - Volts Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1,000 100,000 RDS(on) Limit f = 1 MHz 100µs Ciss 10,000 I D - Amperes Capacitance - PicoFarads 25µs Coss 1,000 100 External Lead Current Limit 1ms 10 10ms 100ms TJ = 175ºC Crss DC TC = 25ºC Single Pulse 100 1 0 5 10 15 20 25 30 35 40 VDS - Volts 1 10 100 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_300N04T2(V6)08-14-08 IXTA300N04T2 IXTP300N04T2 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 40 30 28 VGS = 10V 35 26 24 I D = 200A 22 20 I 18 D = 100A 14 25 20 TJ = 25ºC 10 25 35 45 55 65 75 85 95 105 115 125 40 60 80 TJ - Degrees Centigrade td(on) - - - - TJ = 125ºC, VGS = 10V 65 45 40 35 20 t f - Nanoseconds t r - Nanoseconds I D = 200A, 100A t d(on) - Nanoseconds 55 25 0 4 6 8 10 12 14 40 tf td(off) - - - - 35 VDS = 20V I D = 100A 30 35 20 15 25 10 20 35 45 75 85 95 105 115 15 125 TJ = 125ºC 24 20 40 35 30 TJ = 25ºC 12 25 8 140 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 160 180 20 200 td(off) - - - - 200 TJ = 125ºC, VGS = 10V 200 180 VDS = 20V 175 160 I D = 100A, 200A 150 140 125 120 100 100 75 80 50 60 25 40 0 20 2 4 6 8 10 RG - Ohms 12 14 16 t d(off) - Nanoseconds 45 120 65 220 tf 225 55 50 28 100 55 250 t d(off) - Nanoseconds VDS = 20V 80 30 I D = 200A Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance t f - Nanoseconds td(off) - - - - RG = 2Ω, VGS = 10V 60 40 25 25 16 60 tf 40 45 TJ - Degrees Centigrade 40 16 50 RG = 2Ω, VGS = 10V Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 32 200 55 RG - Ohms 36 180 5 15 2 160 t d(off) - Nanoseconds VDS = 20V 80 60 140 45 75 tr 120 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 120 100 100 ID - Amperes Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance t f - Nanoseconds VDS = 20V 30 15 16 VGS = 10V TJ = 125ºC VDS = 20V t r - Nanoseconds t r - Nanoseconds RG = 2Ω RG = 2Ω IXTA300N04T2 IXTP300N04T2 Fig. 19. Maximum Transient Thermal Impedance 1.000 Z (th )J C - ºC / W 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. 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