Polyfet LX141 Rf power ldmos transistor Datasheet

polyfet rf devices
LX141
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
SILICON GATE ENHANCEMENT MODE
RF POWER LDMOS TRANSISTOR
35.0 Watts Single Ended
Package Style LX2
"Polyfet"TM process
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
ROHS COMPLIANT
features
low feedback and output capacitances,
resulting in high Ft transistors with high
input impedance and high efficiency.
o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
100 Watts
Maximum
Junction
Temperature
o
1.40 C/W
o
200 C
DC Drain
Current
Storage
Temperature
o
o
-65 C to 150 C
RF CHARACTERISTICS (
SYMBOL PARAMETER
MIN
Gps
Common Source Power Gain
η
Drain Efficiency
VSWR
TYP
4.5 A
Drain to
Source
Voltage
110 V
110 V
Gate to
Source
Voltage
20 V
35.0 WATTS OUTPUT )
MAX
16
50
Load Mismatch Tolerance
Drain to
Gate
Voltage
15:1
UNITS TEST CONDITIONS
dB
Idq = 0.20 A, Vds =
50.0 V, F = 500 MHz
%
Idq = 0.20 A, Vds =
50.0 V, F = 500 MHz
Relative
Idq = 0.20 A, Vds = 50.0 V, F =
500 MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL PARAMETER
MIN
TYP
MAX
UNITS TEST CONDITIONS
V
Bvdss
Drain Breakdown Voltage
Idss
Zero Bias Drain Current
1.0
mA
Vds = 50.0 V, Vgs = 0V
Igss
Gate Leakage Current
1
uA
Vds = 0V Vgs = 30V
Vgs
Gate Bias for Drain Current
5
V
gM
Forward Transconductance
110
2
Ids = 25.00 mA, Vgs = 0V
Ids = 0.15 A, Vgs = Vds
1.0
Mho
Vds = 10V, Vgs = 5V
Rdson
Saturation Resistance
0.50
Ohm
Vgs = 20V, Ids = 2.00 A
Idsat
Saturation Current
5.50
Amp
Vgs = 20V, Vds = 10V
Ciss
Common Source Input Capacitance
30.0
pF
Vds = 50.0 Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitance
0.7
pF
Vds = 50.0 Vgs = 0V, F = 1 MHz
Coss
Common Source Output Capacitance
30.0
pF
Vds = 50.0 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 11/09/2009
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com
LX141
POUT VS PIN GRAPH
CAPACITANCE VS VOLTAGE
L8 1 Die CAPACITANCE
L X 1 4 1 : P o u t / G a in vs P in , F re q = 5 0 0 M H z ,
V D S = 5 0 V , I d q = .2 A
22
P out
POUT IN WATTS
E ffic ienc y 50% at 40W
18
30
16
20
G ain
14
10
GAIN IN DB
20
40
CAPACITANCE IN PFS
50
100
0
0.5
1
1.5
2
Ciss
10
1
Crss
0.1
12
0
Coss
0
2.5
5
10
15
20
25
30
35
40
45
50
VDS IN VOLTS
P IN IN WAT T S
IV CURVE
ID & GM VS VGS
L 8 O N E D IE IV C U R V E
L 8 1 D IE
1 0 .0 0
ID & G M
6
Id in amps; Gm in mhos
ID IN AMPS
5
4
3
2
Id
1 .0 0
gM
1
0
0
2
vg=2 v
4
6
V g =4 v
8
10
12
V D S IN V O L T S
V g =6 v
vg=8 v
14
16
vg =10 v
18
vg =1 2v
20
0 .1 0
0
2
4
6
8
10
12
V g s in V o lts
Zin Zout
PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01
POLYFET RF DEVICES
.XXX +/-.005 inches
REVISION 11/09/2009
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com
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