NCE Power NCE40P70K Nce p-channel enhancement mode power mosfet Datasheet

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NCE40P70K
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NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE40P70K uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge .This
device is well suited for high current load applications.
General Features
● VDS =-40V,ID =-70A
RDS(ON) <10mΩ @ VGS=-10V
Schematic diagram
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Application
● Power switch
Marking and pin assignment
● Load switch in high current applications
● DC/DC converters
100% UIS TESTED!
TO-252-2L top view
100% ∆Vds TESTED!
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
NCE40P70K
NCE40P70K
TO-252-2L
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
-40
V
Gate-Source Voltage
VGS
±20
V
ID
-70
A
ID (100℃)
-35
A
Pulsed Drain Current
IDM
-115
A
Maximum Power Dissipation
PD
65
W
0.52
W/℃
EAS
1020
mJ
TJ,TSTG
-55 To 150
℃
Drain Current-Continuous
Drain Current-Continuous(TC=100℃)
Derating factor
Single pulse avalanche energy
(Note 5)
Operating Junction and Storage Temperature Range
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Thermal Characteristic
Thermal Resistance, Junction-to-Case(Note 2)
RθJC
1.92
℃/W
Electrical Characteristics (TC=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
-40
-
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=-40V,VGS=0V
-
-
-1
μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
-
-
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250μA
-1.2
-1.9
-2.5
V
Drain-Source On-State Resistance
RDS(ON)
VGS=-10V, ID=-20A
-
7.5
10
mΩ
gFS
VDS=-10V,ID=-20A
-
50
-
S
-
6460
-
PF
-
684
-
PF
-
600
-
PF
-
15
-
nS
Off Characteristics
On Characteristics (Note 3)
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS=-20V,VGS=0V,
F=1.0MHz
Switching Characteristics (Note 4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
VDD=-20V, RL=2Ω,
-
12
-
nS
td(off)
VGS=-10V,RG=1Ω
-
70
-
nS
-
18
-
nS
-
106
nC
-
22
nC
-
27
nC
Turn-Off Delay Time
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS=-20,ID=-20A,
VGS=-10V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD
Diode Forward Current (Note 2)
IS
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
VGS=0V,IS=-10A
-
-1.2
V
-70
A
-
-
TJ = 25°C, IF =- 10A
-
53
nS
di/dt = -100A/μs(Note3)
-
50
nC
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition: Tj=25℃,VDD=-20V,VG=-10V,L=1mH,Rg=25Ω,IAS=45A
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NCE40P70K
Test Circuit
1) EAS Test Circuit
2) Gate Charge Test Circuit
3) Switch Time Test Circuit
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ID- Drain Current (A)
Normalized On-Resistance
Typical Electrical and Thermal Characteristics (Curves)
TJ-Junction Temperature(℃)
Vds Drain-Source Voltage (V)
Figure 4 Rdson-Junction Temperature
ID- Drain Current (A)
Vgs Gate-Source Voltage (V)
Figure 1 Output Characteristics
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
Figure 5 Gate Charge
Is- Reverse Drain Current (A)
Rdson On-Resistance(mΩ)
Vgs Gate-Source Voltage (V)
ID- Drain Current (A)
Vsd Source-Drain Voltage (V)
Figure 3 Rdson- Drain Current
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Figure 6 Source- Drain Diode Forward
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C Capacitance (pF)
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Figure 7 Capacitance vs Vds
Figure 9 BVDSS vs Junction Temperature
ID- Drain Current (A)
TJ-Junction Temperature(℃)
ID- Drain Current (A)
Vds Drain-Source Voltage (V)
TJ-Junction Temperature(℃)
Figure 8 Safe Operation Area
Figure 10 ID Current Derating vs Junction
Temperature
r(t),Normalized Effective
Transient Thermal Impedance
Vds Drain-Source Voltage (V)
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
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TO-252 Package Information
Symbol
Dimensions In Millimeters
Dimensions In Inches
Min.
Max.
Min.
Max.
A
2.200
2.400
0.087
0.094
A1
0.000
0.127
0.000
0.005
b
0.660
0.860
0.026
0.034
c
0.460
0.580
0.018
0.023
D
6.500
6.700
0.256
0.264
D1
5.100
5.460
0.201
0.215
D2
0.483 TYP.
0.190 TYP.
E
6.000
6.200
0.236
0.244
e
2.186
2.386
0.086
0.094
L
9.800
10.400
0.386
0.409
L1
L2
2.900 TYP.
1.400
L3
0.114 TYP.
1.700
0.055
1.600 TYP.
0.067
0.063 TYP.
L4
0.600
1.000
0.024
0.039
Φ
1.100
1.300
0.043
0.051
θ
0°
8°
0°
8°
h
0.000
0.300
0.000
0.012
V
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5.350 TYP.
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0.211 TYP.
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NCE40P70K
Attention
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Any and all NCE power products described or contained herein do not have specifications that can handle applications that
require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications
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and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states
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