UTC HE8051L-X-T92-K Low voltage high current small signal npn transistor Datasheet

UNISONIC TECHNOLOGIES CO., LTD
HE8051
NPN SILICON TRANSISTOR
LOW VOLTAGE HIGH CURRENT
SMALL SIGNAL NPN
TRANSISTOR

DESCRIPTION
The UTC HE8051 is a low voltage high current small signal
NPN transistor, designed for Class B push-pull 2W audio amplifier
for portable radio and general purpose applications.

FEATURES
* Collector current up to 1.5A
* Collector-Emitter voltage up to 25 V
* complimentary to UTC HE8551

ORDERING INFORMATION
Order Number
Lead Free
Halogen Free
HE8051L-x-T92-B
HE8051G-x-T92-B
HE8051L-x-T92-K
HE8051G-x-T92-K

Package
TO-92
TO-92
Pin Assignment
1
2
3
E
B
C
E
B
C
Packing
Tape Box
Bulk
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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HE8051

NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
25
V
Emitter-Base Voltage
VEBO
6
V
Collector Dissipation (TA=25°C)
PC
1
W
Collector Current
IC
1.5
A
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Current Gain Bandwidth Product
Output Capacitance

SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
hFE3
VCE(SAT)
VBE(SAT)
VBE
fT
Cob
TEST CONDITIONS
IC=100A, IE=0
IC=2mA, IB=0
IE=100A, IC=0
VCB=35V, IE=0
VEB=6V, IC=0
VCE=1V, IC=5mA
VCE=1V, IC=100mA
VCE=1V, IC=800mA
IC=800mA, IB=80mA
IC=800mA, IB=80mA
VCE=1V, IC=10mA
VCE=10V, IC=50mA
VCB=10V, IE=0, f=1MHz
MIN
40
25
6
TYP
MAX
100
100
45
85
40
135
160
110
UNIT
V
V
V
nA
nA
500
0.5
1.2
1.0
100
9.0
V
V
V
MHz
pF
CLASSIFICATION OF hFE2
RANK
RANGE
C
120-200
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
D
160-300
E
250-500
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Capacitance, Cob (pF)
Saturation Voltage, VBE & VCE (mV)
Collector Current, IC (mA)
DC Current Gain, hFE
Collector Current, IC (mA)

Current Gain-Bandwidth Product,
fT (MHz)
HE8051
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
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HE8051
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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