CHA6652-QXG 21- 27.5GHz Power Amplifier UMS A3667A A3688A YYWWG UMS A3667A A3688A YYWWG GaAs Monolithic Microwave IC in SMD leadless package Description The CHA6652-QXG is a three stage monolithic GaAs high power circuit producing YYWWG YYWWG 2 Watt output power. It is highly linear, with UMS UMS A3667A A3688A YYWWG A3667A A3688A possible gain control and integrates a power UMS A6652 A3667A A3688A A3667A A3688A UMS detector. ESD protections are included. UMS YYWW It is designed for Point To Point Radio. YYWWG The circuit is manufactured with a pHEMT process, 0.15µm gate length. 36 lead 6x5 mm QFN package It is supplied in RoHS compliant SMD package. A3667A A3688A UMS A3667A A3688A YWWG A3667A A3688A YWWG YWWG UMS UMS SMU A878663A GWWYY SMU A878663A GWWYY Output power vs frequency Main Features 36 ■ Broadband performances: 21- 27.5GHz ■ 33dBm saturated power ■ 41dBm OIP3 ■ 20dB gain ■ DC bias: Vd = 6.0Volt @ Id = 1.3A ■ QFN 6x5 ■ MSL3 34 UMS A3687A 32 Power (dBm) & PAE (%) 30 Psat P1dB PAE at Psat. 28 26 24 22 20 18 16 14 18 19 20 21 22 23 24 Frequency (GHz) 25 26 27 28 Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Freq Frequency range Gain Linear Gain Psat Saturated output power OIP3 Output IP3 Ref. : DSCHA6652-QXG6159- 07 Jun 16 1/18 Min 21 Typ Max 27.5 20 33 41 Unit GHz dB dBm dBm Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com CHA6652-QXG 21- 27.5GHz Power Amplifier Electrical Characteristics Tamb.= +25°C, Vd = +6.0V Symbol Parameter Fop Operating frequency range Small Signal Gain in 21 - 24GHz Gain Small Signal Gain in 24.25 - 27.5GHz ΔG Gain variation in temperature Saturated Output Power in 21 - 24GHz Saturated Output Power in 24.25 - 26.5GHz Psat Saturated Output Power in 26.75 - 27.5GHz Output IP3 in 21 - 26.5GHz OIP3 Output IP3 in 26.75 - 27.5GHz PAE PAE at saturation in 21 - 24GHz PAE at saturation in 24.25 - 27.5GHz CG Gain control range Input Return Loss in 21 - 24GHz Rlin Input Return Loss in 24.25 - 27.5GHz Rlout Output Return Loss NF Noise figure at nominal gain Detection dynamic range(for output power Dr detection up to Psat) Voltage detection VREF- VDET up to Psat Vdetect Min 21 Typ 22 20 ± 0.03 34.5 33 32.5 41 39 25 18 15 12 15 25 5 30 Max 27.5 Unit GHz dB dB/°C dBm dBm % dB dB dB dB dB 10 to mV 1500 Vg DC gate Voltage -0.65 V Idq Total drain current 1.3 A These values are representative of onboard measurements as defined on the drawing in paragraph "Evaluation mother board". Ref. : DSCHA6652-QXG6159- 07 Jun 16 2/18 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com CHA6652-QXG 21- 27.5GHz Power Amplifier Absolute Maximum Ratings (1) Tamb.= +25°C Symbol Parameter Values Unit Vd DC Drain bias voltage without RF 8 V Id Drain bias quiescent current 1600 mA Vg Gate bias voltage -2 to 0 V Pin Maximum RF compression with Vd=6V 7 dB Ta Operating temperature range -40 to +85 °C Tstg Storage temperature range -55 to +150 °C (1) Operation of this device above anyone of these parameters may cause permanent damage. Typical Bias Conditions Tamb.= +25°C Symbol Pad No Vd1 7, 20 Vd2 5, 22 Vd3 3, 24 Vg1 8, 19 Vg2 6, 21 Vg3 4, 23 Parameter DC Drain voltage 1st stage DC Drain voltage 2nd stage DC Drain voltage 3rd stage DC Gate voltage 1st stage DC Gate voltage 2nd stage DC Gate voltage 3rd stage Ref. : DSCHA6652-QXG6159- 07 Jun 16 3/18 Values 6.0 6.0 6.0 -0.65 -0.65 -0.65 Unit V V V V V V Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com CHA6652-QXG 21- 27.5GHz Power Amplifier Device thermal performances All the figures given in this section are obtained assuming that the QFN device is only cooled down by conduction through the package thermal pad (no convection mode considered). The temperature is monitored at the package back-side interface (Tcase). The system maximum temperature must be adjusted in order to guarantee that Tjunction remains below the maximum value specified in the Absolute Maximum Ratings table. So, the system PCB must be designed to comply with this requirement. Biasing conditions (1) Vd= 6V RTH Id= 1300mA Thermal Resistance ( Junction to Case) Pdiss= 7.8W (1) Assuming 85°C Tcase Parameter Tjunction (°C) RTH ( °C/W) T50 ( hours) 176 11.8 3.0E+07 1.E+11 1.E+10 T50 (hours) 1.E+09 1.E+08 1.E+07 1.E+06 1.E+05 1.E+04 100 120 140 160 180 200 220 240 Junction Temperature (°C) Ref. : DSCHA6652-QXG6159- 07 Jun 16 4/18 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com CHA6652-QXG 21- 27.5GHz Power Amplifier Typical Package Sij parameters Tamb.= +25°C, Vd = +6.0V, Id = 1300mA Freq S11 PhS11 S12 (GHz) (dB) (°) (dB) 1 -0.169 161.7 -87.033 2 -0.183 143.3 -71.756 3 -0.239 124.9 -74.904 4 -0.296 105.7 -67.935 5 -0.308 86.5 -68.950 6 -0.534 64.8 -64.421 7 -0.985 42.9 -64.244 8 -2.043 19.3 -71.085 9 -4.367 2.9 -69.740 10 -4.249 -3.6 -68.116 11 -3.477 -26.1 -62.689 12 -3.701 -54.8 -66.773 13 -5.133 -88.3 -56.036 14 -8.956 -128.4 -48.460 15 -24.424 -177.0 -48.849 16 -14.597 -47.5 -50.514 17 -12.631 -94.0 -50.703 18 -16.922 -101.9 -50.198 19 -14.816 -96.1 -49.794 20 -12.559 -115.3 -49.906 21 -13.530 -134.7 -53.073 22 -12.188 -151.3 -60.703 23 -14.467 169.1 -48.472 24 -21.466 -179.6 -48.853 25 -15.895 -167.5 -47.864 26 -14.439 159.9 -42.218 27 -17.337 118.3 -38.879 28 -20.184 171.8 -43.908 29 -15.111 102.5 -40.171 30 -23.891 79.3 -37.658 31 -19.903 128.1 -36.130 32 -14.856 90.5 -37.695 33 -13.093 31.4 -40.644 34 -11.357 -43.0 -41.742 35 -7.736 -115.1 -41.327 36 -4.822 -171.1 -38.996 37 -2.986 146.2 -43.049 38 -1.917 110.9 -43.547 39 -1.526 81.2 -38.211 40 -1.307 55.3 -34.786 Ref. : DSCHA6652-QXG6159- 07 Jun 16 PhS12 (°) 51.9 63.1 64.1 49.1 -2.6 -25.0 -52.2 -89.8 -36.9 -86.7 -123.3 -156.6 -173.3 104.5 60.2 31.7 -3.8 -18.5 -37.3 -71.8 -134.0 15.2 -18.1 -28.7 -27.5 -48.5 -86.8 -118.7 -118.8 -140.3 -165.6 155.3 136.3 133.4 144.2 125.3 98.0 129.2 116.0 95.5 5/18 S21 (dB) -78.505 -72.361 -70.501 -63.022 -57.334 -50.447 -46.006 -42.426 -42.000 -45.429 -42.508 -51.614 -57.289 -48.238 -47.219 -29.625 -2.099 15.073 21.049 22.066 22.421 22.183 22.017 21.074 20.073 19.630 20.312 19.736 6.952 -5.205 -16.093 -25.483 -32.569 -38.565 -43.173 -39.500 -42.143 -42.192 -37.937 -35.185 PhS21 (°) 59.9 38.4 40.0 15.6 -33.3 -127.7 120.2 26.7 -63.5 -127.0 177.7 30.9 -177.9 102.2 57.0 21.2 -104.4 74.5 -96.2 123.3 2.0 -110.7 141.1 33.2 -68.1 -172.9 71.5 -83.8 131.2 36.1 -51.1 -135.8 156.5 114.5 141.7 135.9 107.0 126.1 117.8 93.7 S22 (dB) -0.208 -0.293 -0.312 -0.375 -0.484 -0.655 -0.985 -1.692 -2.071 -2.176 -2.314 -2.668 -3.360 -5.214 -10.275 -24.490 -14.846 -15.697 -21.241 -30.079 -32.742 -29.328 -30.319 -32.789 -29.963 -35.908 -29.981 -26.490 -34.483 -21.718 -15.452 -11.802 -9.894 -9.805 -13.682 -23.947 -11.253 -4.672 -2.085 -1.474 PhS22 (°) 160.9 141.9 122.6 102.5 82.2 60.5 38.1 17.5 -1.4 -22.2 -45.8 -71.2 -101.4 -138.5 -179.9 -154.0 -143.6 176.7 127.7 89.9 -43.7 -123.0 -155.3 -174.3 131.8 23.1 -12.7 -27.2 155.2 2.0 -62.0 -118.4 -171.7 138.4 92.7 146.1 160.1 129.7 90.3 59.7 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com CHA6652-QXG 21- 27.5GHz Power Amplifier Typical Board Measurements Tamb.= +25°C, Vd = +6.0V, Id = 1300mA Measurement performed in the access plans of the QFN, using the proposed land pattern & board, as defined in paragraph “Evaluation mother board” Gain & Return Loss versus Frequency 25 20 15 10 5 S21 S11 S22 Sij (dB) 0 -5 -10 -15 -20 -25 -30 -35 -40 17 18 19 20 21 22 23 24 25 Frequency (GHz) 26 27 28 29 30 Gain control & current versus Gate Voltage 24 1.32 22 1.2 20 1.08 18 S21 (dB) 0.84 14 0.72 12 0.6 10 8 6 24.2GHz 27.5GHz 21.2GHz 23.6GHz 0.48 0.36 Id 4 0.24 2 0.12 0 -1.2 Drain current (A) 0.96 16 -1.1 Ref. : DSCHA6652-QXG6159- 07 Jun 16 -1 -0.9 Gate Voltage (V) 6/18 -0.8 -0.7 0 -0.6 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com CHA6652-QXG 21- 27.5GHz Power Amplifier Typical Board Measurements Tamb.= +25°C, Vd = +6.0V, Id = 1300mA Input Return Loss vs Frequency Output Return Loss vs Frequency 0 0 -5 -5 S11 at min.gain S22 at max. gain -10 Output Return loss (dB) Input Return loss (dB) S11 at max. gain -15 -20 -25 -30 -35 S22 at min.gain -10 -15 -20 -25 -30 -35 -40 -40 17 18 19 20 21 22 23 24 25 26 27 28 29 30 17 18 19 20 21 Frequency (GHz) 22 23 24 25 26 27 28 29 30 Frequency (GHz) Linear Gain versus Frequency in Temperature 28 26 24 Gain (dB) 22 20 18 16 14 -40 C 25 C 85 C 12 10 17 18 19 20 Ref. : DSCHA6652-QXG6159- 07 Jun 16 21 22 23 24 Frequency (GHz) 7/18 25 26 27 28 29 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com CHA6652-QXG 21- 27.5GHz Power Amplifier Typical Board Measurements Tamb.= +25°C, Vd = +6.0V, Id = 1300mA Output power & PAE versus Frequency 36 34 32 Power (dBm) & PAE (%) 30 Psat P1dB PAE at Psat. 28 26 24 22 20 18 16 14 18 19 20 21 22 23 24 Frequency (GHz) 25 26 27 28 35 0 30 Phase gain compression (°) Amplitude gain compression (dB) Amplitude & Phase variation versus Output Power 1 -1 -2 -3 -4 -5 -6 21.2 GHz 24.2 GHz 26.5 GHz 25 20 15 10 5 0 21.2 GHz 27.5 GHz -7 24.2 GHz 26.5 GHz 27.5 GHz -5 7 11 15 19 23 27 31 35 7 11 Output power (dBm) Ref. : DSCHA6652-QXG6159- 07 Jun 16 15 19 23 27 31 35 Output power (dBm) 8/18 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com CHA6652-QXG 21- 27.5GHz Power Amplifier Typical Board Measurements Tamb.= +25°C, Vd = +6.0V, Id = 1300mA Saturated Power versus Temperature 38 37 Saturated Power (dBm) -40 C 25 C 85 C 36 35 34 33 32 31 30 21 22 23 24 25 Frequency (GHz) 26 27 Noise Figure versus Current & Gate Voltage 20 2 18 1.8 16 1.6 23.5 GHz 24.5 GHz 27.5 GHz Id 14 1.4 12 1.2 10 1 8 0.8 6 0.6 4 0.4 2 0.2 0 -1.2 -1.1 -1 -0.9 -0.8 -0.7 Drain current (A) Noise figure (dB) 21 GHz 0 -0.6 Gate voltage (V) Ref. : DSCHA6652-QXG6159- 07 Jun 16 9/18 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com CHA6652-QXG 21- 27.5GHz Power Amplifier Typical Board Measurements Tamb.= +25°C, Vd = +6.0V, Id = 1300mA Noise figure versus Temperature 10 9 8 Noise Figure (dB) 7 6 5 4 3 2 -40 C 25 C 85 C 1 0 21 22 23 24 25 26 27 28 Frequency (GHz) Drain current versus Output Power 2 500 2 400 2 300 -40 C Drain current (mA) 2 200 25 C 85 C 2 100 2 000 1 900 1 800 1 700 1 600 1 500 1 400 1 300 1 200 0 4 8 12 16 20 24 28 32 36 Output power (dBm) Ref. : DSCHA6652-QXG6159- 07 Jun 16 10/18 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com CHA6652-QXG 21- 27.5GHz Power Amplifier Typical Board Measurements Tamb.= +25°C, Vd = +6.0V, Id = 1300mA Output IP3 & IMD3 versus Output Power 45 44 42 IMD3 (dBc) Output IP3 (dBm) 43 41 40 39 38 37 21.2 23.6 24.5 26.5 36 35 12 14 16 18 20 22 24 26 28 30 75 70 65 60 55 50 45 40 35 30 25 20 32 21.2 12 14 23.6 16 18 Output power DCL (dBm) 24.5 20 22 26.5 24 26 28 30 32 Output power DCL (dBm) Output IP3 with temperature at 21.2GHz 45 44 Output IP3 (dBm) 43 42 41 40 39 38 85 C 25 C -40 C 37 36 35 12 14 16 18 20 22 24 26 28 30 32 Output power DCL (dBm) Ref. : DSCHA6652-QXG6159- 07 Jun 16 11/18 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com CHA6652-QXG 21- 27.5GHz Power Amplifier Typical Board Measurements Tamb.= +25°C, Vd = +6.0V, Id = 1300mA Power Detector versus Pout & Frequency 10 Vref - Vdet (V) 21.5GHz 23.5GHz 26GHz 1 0,1 0,01 0 4 8 12 16 20 24 Output power (dBm) 28 32 36 32 36 Power Detector versus Pout & Temperature 10 Vref - Vdet (V) -40 C 25 C 85 C 1 0,1 0,01 0 4 Ref. : DSCHA6652-QXG6159- 07 Jun 16 8 12 16 20 24 Output power (dBm) 12/18 28 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com CHA6652-QXG 21- 27.5GHz Power Amplifier Package outline (1) Matte tin, Lead Free Units : From the standard : (Green) mm JEDEC MO-220 (VGGD) 37- GND 123456789101112- NC DET Vd3 Vg3 Vd2 Vg2 Vd1 Vg1 NC NC NC NC 131415161718192021222324- RF in Gnd(2) NC NC NC NC Vg1 Vd1 Vg2 Vd2 Vg3 Vd3 252627282930313233343536- NC NC Gnd(2) NC Gnd(2) RF out NC NC NC NC REF NC (1) The package outline drawing included to this data-sheet is given for indication. Refer to the application note AN0017 (http://www.ums-gaas.com) for exact package dimensions. (2) It is strongly recommended to ground all pins marked “Gnd” through the PCB board. Ensure that the PCB board is designed to provide the best possible ground to the package. Ref. : DSCHA6652-QXG6159- 07 Jun 16 13/18 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com CHA6652-QXG 21- 27.5GHz Power Amplifier Definition of the Sij reference planes The reference planes used for Sij measurements given above are symmetrical from the symmetrical axis of the package (see drawing beside). The input and output reference planes are located at 3.66mm offset (input wise and output wise respectively) from this axis. Then, the given Sij parameters incorporate the land pattern of the evaluation motherboard recommended in paragraph "Evaluation mother board". ESD sensitivity Standard MIL-STD-1686C Value HBM Class 1 (<2000V) Package Information Parameter Package body material Lead finish MSL Rating Ref. : DSCHA6652-QXG6159- 07 Jun 16 Value RoHS-compliant Low stress Injection Molded Plastic 100% matte tin (Sn) MSL3 14/18 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com CHA6652-QXG 21- 27.5GHz Power Amplifier Evaluation mother board ■ Compatible with the proposed footprint. ■ Based on typically Ro4350 / 10mils or equivalent. ■ Using a micro-strip to coplanar transition to access the package. ■ Recommended for the implementation of this product on a module board. ■ Decoupling capacitors of 22pF ±5%, 10nF ±10% and 1µF ±10% are recommended for the gate accesses. ■ Decoupling capacitors of 100pF ±5%, 10nF ±10% and 1µF ±10% are recommended for the drain accesses. ■ A 10KΩ resistor is recommended on VREF & VDET accesses for the detector ■ See application note AN0017 for details. Vg1 Vd1 Vg2 Vd2 Vg3 Vd3 DET REF Vg1 Vd1 Vg2 Vd2 Vg3 Vd3 Ref. : DSCHA6652-QXG6159- 07 Jun 16 15/18 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com CHA6652-QXG 21- 27.5GHz Power Amplifier Notes Due to ESD protection circuits on RF input and output, an external capacitance might be requested to isolate the product from external voltage that could be present on the RF accesses. Vg1 Vd1 Vg2 Vd2 Vg3 Vd3 19 20 21 22 23 24 RFIN 13 8 7 Vg1 Vd1 6 Vg2 5 4 Vd2 Vg3 3 30 RFOUT 35 REF 2 Vd3 DET The DC connections do not include any decoupling capacitor in package, therefore it is mandatory to provide a good external DC decoupling (See paragraph “Evaluation mother board”) on the PC board, as close as possible to the package. A 10KΩ resistor is recommended in parallel to VDET, and VREF accesses. The circuit includes ESD protections on all RF and DC leads Ref. : DSCHA6652-QXG6159- 07 Jun 16 16/18 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com CHA6652-QXG 21- 27.5GHz Power Amplifier DC Schematic 6V, 1300mA VG1 VD1 VG2 28Ω 28Ω VD2 VG3 VD3 20Ω 18Ω 65mA 205mA 380mA 65mA 205mA 380mA 18Ω DET 20Ω REF 14KΩ 14KΩ VG1 VD1 VG2 VD2 VG3 VD3 Recommended UMS Power chain The CHA6652-QXG is recommended with the CHA3395-QDG as driver. Total Gain: 44dB Gain control: 30dB with the both amplifiers. For more information about the CHA3395-QDG, see our web site www.ums-gaas.com Driver HPA CHA3395-QDG CHA3397-QDG 36-40.5GHz 21- 29.5GHz 4V 4V 200mA 180mA Ref. : DSCHA6652-QXG6159- 07 Jun 16 CHA6652-QXG ES-CHA6194-QXG 37-40GHz 21- 27.5GHz 6V 6V 800mA 1300mA 17/18 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com CHA6652-QXG 21- 27.5GHz Power Amplifier Recommended package footprint Refer to the application note AN0017 available at http://www.ums-gaas.com for package foot print recommendations. SMD mounting procedure For the mounting process standard techniques involving solder paste and a suitable reflow process can be used. For further details, see application note AN0017. Recommended environmental management UMS products are compliant with the regulation in particular with the directives RoHS N°2011/65 and REACh N°1907/2006. More environmental data are available in the application note AN0019 also available at http://www.ums-gaas.com. Recommended ESD management Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD sensitivity and handling recommendations for the UMS package products. Ordering Information QFN 6x5 package: CHA6652-QXG/XY Stick: XY = 20 Tape & reel: XY = 21 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA6652-QXG6159- 07 Jun 16 18/18 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com