Diodes DMS2085LSD P-channel enhancement mode mosfet Datasheet

DMS2085LSD
P-CHANNEL ENHANCEMENT MODE MOSFET
WITH INTEGRATED SCHOTTKY DIODE
ADVANCE INFORMATION
NEW PRODUCT
Product Summary
Features and Benefits
MOSFET
RDS(on) max
85mΩ @ VGS = -10V
125mΩ @ VGS = -4.5V
SCHOTTKY DIODE
VF max
400mV @ IF = 0.5A
470mV @ IF = 1.0A
V(BR)DSS
-20V
VR
20V
ID
-3.3A
-2.8A
IO
1.0A
•
•
Low Input Capacitance
MOSFET with Low RDS(ON) – Minimize Conduction Losses
•
Schottky Diode with Low Forward Voltage Drop
•
Fast Switching Speed
•
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
•
Halogen and Antimony Free. “Green” Device (Note 3)
•
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Description
•
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching
•
applications.
Applications
DC-DC Converters
•
Power Management Functions
•
Backlighting
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
performance, making it ideal for high efficiency power management
•
Case: SO-8
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Terminal Connections: See Diagram
•
Terminals: Finish – Matte Tin annealed over Copper leadframe
Solderable per MIL-STD-202, Method 208 e3
•
Weight: 0.074 grams (approximate)
D
A
K
A
K
S
D
G
D
G
Top View
Internal Schematic
Top View
A
S
K
Q1 P-Channel MOSFET
D1 Schottky Diode
Ordering Information (Note 4)
Part Number
DMS2085LSD-13
Notes:
Case
SO-8
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
8
5
8
5
S2085LD
S2085LD
YY WW
YY WW
1
4
Chengdu A/T Site
DMS2085LSD
Document number: DS36926 Rev. 2 - 2
1
= Manufacturer’s Marking
S2085LD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
4
Shanghai A/T Site
1 of 7
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August 2014
© Diodes Incorporated
DMS2085LSD
Maximum Ratings – P-CHANNEL MOSFET – Q1 (@TA = +25°C, unless otherwise specified.)
Characteristic
ADVANCE INFORMATION
NEW PRODUCT
Symbol
Value
Drain-Source Voltage
VDSS
-20
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 6) VGS = 10V
Units
Steady
State
TA = +25°C
TA = +70°C
ID
-3.3
-2.7
A
t<10s
TA = +25°C
TA = +70°C
ID
-4.3
-3.4
A
A
Maximum Body Diode Forward Current (Note 6)
IS
-1.5
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
IDM
-11.2
A
Avalanche Current (Notes 7) L = 5mH
IAR
-5
A
Avalanche Energy (Notes 7) L = 5mH
EAR
50
mJ
Maximum Ratings – SCHOTTKY – D1 (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
VRRM
VRWM
VR
20
V
Average Rectified Output Current (Note 7, t<10s)
IO
1
A
Peak Repetitive Forward Current (Note 7, t<10s)
IFRM
2
A
Non-Repetitive Peak Forward Surge Current (Note 7, t<10s)
Single half sine-wave superimposed on rated load
IFSM
20
A
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Symbol
TA = +25°C
TA = +70°C
Steady state
t<10s
TA = +25°C
TA = +70°C
Steady state
t<10s
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
DMS2085LSD
Document number: DS36926 Rev. 2 - 2
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PD
RθJA
PD
Value
1.1
1.8
108
65
1.8
2.3
RθJA
78
50
RθJC
22
TJ, TSTG
-55 to +150
Units
W
°C/W
W
°C/W
°C
August 2014
© Diodes Incorporated
DMS2085LSD
Electrical Characteristics P-Channel Q1 (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Source Leakage
Unit
Test Condition
-20
⎯
⎯
V
VGS = 0V, ID = -250µA
⎯
⎯
-1
µA
VDS = -20V, VGS = 0V
IGSS
⎯
⎯
±100
nA
VGS = ±20V, VDS = 0V
Gate Threshold Voltage
VGS(th)
-0.5
-1.5
-2.2
V
VDS = VGS, ID = -250µA
Static Drain-Source On-Resistance
RDS(ON)
ON CHARACTERISTICS (Note 8)
⎯
70
85
⎯
100
125
VSD
⎯
-0.8
-1.0
Input Capacitance
Ciss
⎯
353
⎯
Output Capacitance
Coss
⎯
49
⎯
Reverse Transfer Capacitance
Crss
⎯
41
⎯
Gate Resistance
RG
⎯
6.2
⎯
Total Gate Charge (VGS = -4.5V)
Qg
⎯
3.7
⎯
Diode Forward Voltage
mΩ
V
VGS = -10V, ID = -3.05A
VGS = -4.5V, ID = -1.50A
VGS = 0V, IS = -1.0A
DYNAMIC CHARACTERISTICS (Note 9)
Total Gate Charge (VGS = -10V)
Qg
⎯
7.8
⎯
Gate-Source Charge
Qgs
⎯
1.1
⎯
pF
VDS = -15V, VGS = 0V
f = 1.0MHz
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
nC
VDS = -15V, ID = -3A
Gate-Drain Charge
Qgd
⎯
1.3
⎯
Turn-On Delay Time
tD(on)
⎯
3.3
⎯
Turn-On Rise Time
tr
⎯
3.0
⎯
Turn-Off Delay Time
tD(off)
⎯
14
⎯
tf
⎯
6.8
⎯
Body Diode Reverse Recovery Time
trr
⎯
33
⎯
nS
IS = -3.05A, dI/dt = 100A/μs
Body Diode Reverse Recovery Charge
Qrr
⎯
46
⎯
nC
IS = -3.05A, dI/dt = 100A/μs
Turn-Off Fall Time
Notes:
nS
VDS = -15V,RL = 15Ω
VGS = -10V, RG = 6Ω
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
15.0
10
VGS = -4.0V
VGS = -10V
VGS = -3.5V
8
ID, DRAIN CURRENT (A)
12.0
VGS = -3.0V
9.0
6.0
VGS = -2.5V
3.0
VGS = -1.8V
0.0
VDS = -5.0V
9
VGS = -4.5V
ID, DRAIN CURRENT (A)
ADVANCE INFORMATION
NEW PRODUCT
OFF CHARACTERISTICS (Note 8)
0
DMS2085LSD
Document number: DS36926 Rev. 2 - 2
6
5
4
3
2
VGS = -2.0V
0.5
1
1.5
2
2.5
VDS, DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
7
TA = 150°C
1
3
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0
TA = 125°C
0
0.5
TA = 85°C
T A = 25°C
T A = -55°C
1 1.5 2 2.5 3 3.5 4 4.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
5
August 2014
© Diodes Incorporated
0.12
VGS = -4.5V
0.09
0.06
VGS = -10V
0.03
0
3
6
9
12
ID, DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
VGS = -4.5V
0.18
0.16
T A = 150 °C
TA = 125°C
0.14
0.12
T A = 85°C
0.1
T A = 25°C
0.08
T A = -55°C
0.06
0.04
0.02
0
15
1.6
0
1
2
3
4
5
6
7
8
9
ID, DRAIN SOURCE CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
10
0.15
VGS = -4.5V
ID = -5A
VGS = -10V
ID = -5A
1.2
0.8
0.4
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5 On-Resistance Variation with Temperature
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
0.2
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0.15
0
0.12
0.03
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 6 On-Resistance Variation with Temperature
10
1.8
9
1.6
8
-ID = 1mA
1.2
1
-ID = 250µA
0.8
0.6
0.4
0
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
DMS2085LSD
Document number: DS36926 Rev. 2 - 2
7
6
5
T A= 150 °C
4
TA= 125°C
3
2
TA= 85°C
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0
T A= 25°C
T A= -55°C
1
0.2
VGS = -10V
ID = -5A
0.06
2
1.4
VGS = -4.5V
ID = -5A
0.09
IS, SOURCE CURRENT (A)
VGS(TH), GATE THRESHOLD VOLTAGE (V)
ADVANCE INFORMATION
NEW PRODUCT
DMS2085LSD
0
1.2
1.5
0.3
0.6
0.9
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
August 2014
© Diodes Incorporated
DMS2085LSD
VGS, GATE-SOURCE VOLTAGE (V)
CT, JUNCTION CAPACITANCE (pF)
10
Ciss
100
Coss
C rss
8
6
VDS = -15V
ID = -3A
4
2
f = 1MHz
10
0
100
ID, DRAIN CURRENT (A)
ADVANCE INFORMATION
NEW PRODUCT
1000
5
10
15
20
25
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9 ypical Junction Capacitance
30
0
0
1
2
3
4
5
6
7
Qg, TOTAL GATE CHARGE (nC)
Figure 10 Gate-Charge Characteristics
8
RDS(on)
Limited
10
DC
1
PW = 10s
PW = 1s
PW = 100ms
PW = 10ms
0.1 TJ(max) = 150°C
TA = 25°C
VGS = 4.5V
Single Pulse
DUT on 1 * MRP Board
0.01
0.1
PW = 1ms
PW = 100µs
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11 SOA, Safe Operation Area
DMS2085LSD
Document number: DS36926 Rev. 2 - 2
100
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DMS2085LSD
Electrical Characteristics – SCHOTTKY – D1 (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
V(BR)R
20
Forward Voltage (Note 8)
VF
⎯
⎯
Reverse Current (Note 8)
IR
⎯
Unit
Test Condition
35
⎯
V
IR = 1mA
⎯
⎯
0.40
0.47
V
IF = 0.5A
IF = 1.0A
30
80
μA
VR = 20V
8. Short duration pulse test used to minimize self-heating effect.
10
1
IR, INSTANTANEOUS REVERSE CURRENT (µA)
Notes:
IF, INSTANTANEOUS FORWARD CURRENT (A)
T A = 150°C
TA = 125°C
0.1
TA = 85°C
TA = 25°C
T A = -55°C
0.01
0
100000
0.1
0.2
0.3
0.4
0.5
0.6
0.7
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 12 Typical Forward Characteristics
TA = 150°C
10000
TA = 125°C
TA = 85°C
1000
TA = 25°C
100
TA = -55°C
10
1
0
2
4
6
8
10 12 14 16 18 20
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 13 Typical Reverse Characteristics
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
0.254
ADVANCE INFORMATION
NEW PRODUCT
Reverse Breakdown Voltage (Note 8)
Max
E1 E
A1
L
Gauge Plane
Seating Plane
Detail ‘A’
h
A2 A A3
7°~9°
45°
Detail ‘A’
b
e
D
DMS2085LSD
Document number: DS36926 Rev. 2 - 2
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SO-8
Dim
Min
Max
A
1.75
A1
0.10
0.20
A2
1.30
1.50
A3
0.15
0.25
b
0.3
0.5
D
4.85
4.95
E
5.90
6.10
E1
3.85
3.95
e
1.27 Typ
h
0.35
L
0.62
0.82
0°
8°
θ
All Dimensions in mm
August 2014
© Diodes Incorporated
DMS2085LSD
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
ADVANCE INFORMATION
NEW PRODUCT
X
Dimensions
X
Y
C1
C2
C1
Value (in mm)
0.60
1.55
5.4
1.27
C2
Y
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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DMS2085LSD
Document number: DS36926 Rev. 2 - 2
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