ACE ACE9006M N-channel 60-v (d-s) mosfet Datasheet

ACE9006M
N-Channel 60-V (D-S) MOSFET
Description
ACE9006M uses advanced trench technology to provide excellent RDS(ON).
This device particularly suits for low voltage application such as power management of desktop
computer or notebook computer power management, DC/DC converter.
Features
•
•
•
Low rDS(on) trench technology
Low thermal impedance
Fast switching speed
Applications:
• White LED boost converters
• Automotive Systems
• Industrial DC/DC Conversion Circuits
Absolute Maximum Ratings
(TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
±20
ID
90
IDM
240
IS
90
A
PD
300
W
Continuous Drain Current a
Pulsed Drain Current
TC =25°C
b
Continuous Source Current (Diode Conduction)
Power Dissipation
a
a
TC =25°C
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175
A
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Maximum Unit
Maximum Junction-to-Ambient
RθJA
62.5
Maximum Junction-to-Case
RθJC
0.5
°C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
VER 1.1
1
ACE9006M
N-Channel 60-V (D-S) MOSFET
Packaging Type
TO-220AB
DRAIN
connected
to TAB
N-Channel MOSFET
G D
S
Ordering information
ACE9006M XX + H
Halogen - free
Pb - free
ZM:TO-220
VER 1.1
2
ACE9006M
N-Channel 60-V (D-S) MOSFET
Electrical Characteristics
TA=25℃, unless otherwise specified.
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Static
VGS(th)
VDS = VGS, ID = 250 uA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ±20 V
Zero Gate Voltage Drain Current
IDSS
Gate-Source Threshold Voltage
On-State Drain Current a
ID(on)
1
V
±100
VDS = 48 V, VGS = 0 V
1
VDS = 48 V, VGS = 0 V, TJ = 55°C
25
VDS = 5 V, VGS = 10 V
120
nA
uA
A
VGS = 10 V, ID = 45 A
16.5
VGS = 4.5 V, ID = 44 A
21
Drain-Source On-Resistance a
rDS(on)
Forward Transconductance a
gfs
VDS = 15 V, ID = 20 A
30
S
Diode Forward Voltage a
VSD
IS = 55A, VGS = 0 V
1.04
V
Dynamic
b
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
11
Turn-On Delay Time
td(on)
13
Rise Time
Turn-Off Delay Time
21
VDS = 30 V, VGS = 4.5 V, ID = 20 A
6.4
tr
VDD = 30 V, RL = 1.5 Ω , ID = 20 A,
17
td(off)
VGEN = 10 V, RGEN = 6 Ω
66
tf
23
Input Capacitance
Ciss
2138
Output Capacitance
Coss
ReverseTransfer Capacitance
Crss
Fall Time
mΩ
VDS = 15 V, VGS = 0 V, f =1 MHz
nC
ns
pF
184
168
Note:
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.
VER 1.1
3
ACE9006M
N-Channel 60-V (D-S) MOSFET
Typical Performance Characteristics (N-Channel)
ID-Drain Current (A)
1. On-Resistance vs. Drain Current
VGS - Gate-to-Source Voltage (V)
3. On-Resistance vs. Gate-to-Source Voltage
VDS - Drain-to-Source Voltage (V)
5. Output Characteristics
VGS - Gate-to-Source Voltage (V)
2. Transfer Characteristics
VSD - Source-to-Drain Voltage (V)
4. Drain-to-Source Forward Voltage
VDS-Drain-to-Source Voltage (V)
6. Capacitance
VER 1.1
4
ACE9006M
N-Channel 60-V (D-S) MOSFET
Typical Performance Characteristics
Qg - Total Gate Charge (nC)
7. Gate Charge
VDS Drain to Source Voltage (V)
9. Safe Operating Area
TJ –Junction Temperature(°C)
8. Normalized On-Resistance Vs
Junction Temperature
t1 TIME (SEC)
10. Single Pulse Maximum Power Dissipation
t1 TIME (sec)
11. Normalized Thermal Transient Junction to Ambient
VER 1.1
5
ACE9006M
N-Channel 60-V (D-S) MOSFET
Packing Information
TO-220AB
VER 1.1
6
ACE9006M
N-Channel 60-V (D-S) MOSFET
Notes
ACE does not assume any responsibility for use as critical components in life support devices or systems
without the express written approval of the president and general counsel of ACE Electronics Co., LTD.
As sued herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in
a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can
be reasonably expected to cause the failure of the life support device or system, or to affect its safety
or effectiveness.
ACE Technology Co., LTD.
http://www.ace-ele.com/
VER 1.1
7
Similar pages