TI1 INA201AIDRG4 High-side measurement current-shunt monitor with open-drain comparator and reference Datasheet

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INA200, INA201, INA202
SBOS374D – NOVEMBER 2006 – REVISED OCTOBER 2015
INA20x High-Side Measurement Current-Shunt Monitor
With Open-Drain Comparator and Reference
1 Features
3 Description
•
•
The INA200, INA201, and INA202 devices are highside current-shunt monitors with voltage output and
integrated comparator. The INA200–INA202 devices
can sense drops across shunts at common-mode
voltages from –16 V to 80 V. The INA200–INA202
devices are available with three output voltage
scales: 20 V/V, 50 V/V, and 100 V/V, with a
bandwidth up to 500-kHz.
1
•
•
•
•
•
•
•
•
Complete Current Sense Solution
Three gain Options Available:
– INA200 = 20 V/V
– INA201 = 50 V/V
– INA202 = 100 V/V
0.6-V Internal Voltage Reference
Internal Open-Drain Comparator
Latching Capability on Comparator
Common-Mode Range: –16 V to 80 V
High Accuracy: 3.5% Maximum Error Over
Temperature
Bandwidth: 500 kHz (INA200)
Quiescent Current: 1800 μA (maximum)
Packages: SOIC-8, VSSOP-8
The INA200, INA201, and INA202 devices also
incorporate an open-drain comparator and internal
reference providing a 0.6-V threshold. External
dividers are used to set the current trip point. The
comparator includes a latching capability, which can
be made transparent by grounding (or leaving open)
the RESET pin.
The INA200, INA201, and INA202 devices operate
from a single 2.7-V to 18-V supply, drawing a
maximum of 1800 μA of supply current. Package
options include the very small VSSOP-8 and the
SOIC-8. All versions are specified over the extended
operating temperature range of –40°C to 125°C.
2 Applications
•
•
•
•
•
•
•
Notebook Computers
Cell Phones
Telecom Equipment
Automotive
Power Management
Battery Chargers
Welding Equipment
Device Information(1)
PART NUMBER
INA200
INA201
INA202
PACKAGE
BODY SIZE (NOM)
SOIC (8)
4.90 mm × 3.91 mm
VSSOP (8)
3.00 mm × 3.00 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Simplified Schematic
1
INA200 (G = 20)
INA201 (G = 50)
INA202 (G = 100)
VS
2 OUT
G
VIN+
8
VIN-
7
CMPOUT
6
RESET
5
0.6V
Reference
3 CMPIN
Comparator
4
GND
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
INA200, INA201, INA202
SBOS374D – NOVEMBER 2006 – REVISED OCTOBER 2015
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Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
3
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
3
4
4
4
4
6
6
8
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics: Current-Shunt Monitor .....
Electrical Characteristics: Comparator......................
Electrical Characteristics: General ............................
Typical Characteristics ..............................................
Detailed Description ............................................ 12
7.1 Overview ................................................................. 12
7.2 Functional Block Diagram ....................................... 12
7.3 Feature Description................................................. 12
7.4 Device Functional Modes........................................ 17
8
Application and Implementation ........................ 20
8.1 Application Information............................................ 20
8.2 Typical Application ................................................. 20
9 Power Supply Recommendations...................... 21
10 Layout................................................................... 22
10.1 Layout Guidelines ................................................. 22
10.2 Layout Example .................................................... 22
11 Device and Documentation Support ................. 23
11.1
11.2
11.3
11.4
11.5
Related Links ........................................................
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
23
23
23
23
23
12 Mechanical, Packaging, and Orderable
Information ........................................................... 23
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision C (October 2010) to Revision D
•
Page
Added ESD Ratings table, Thermal Information table, Feature Description section, Device Functional Modes,
Application and Implementation section, Power Supply Recommendations section, Layout section, Device and
Documentation Support section, and Mechanical, Packaging, and Orderable Information section ..................................... 4
Changes from Revision B (October, 2007) to Revision C
Page
•
Changed title of data sheet..................................................................................................................................................... 1
•
Updated document format to current standards..................................................................................................................... 1
•
Revised front-page figure ....................................................................................................................................................... 1
2
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SBOS374D – NOVEMBER 2006 – REVISED OCTOBER 2015
5 Pin Configuration and Functions
DGK and D Packages
8-Pin VSSOP and SOIC
Top View
VS
1
8
VIN+
OUT
2
7
VIN-
CMPIN
3
6
CMPOUT
GND
4
5
RESET
Pin Functions
PIN
NO.
I/O
NAME
1
DESCRIPTION
Vs
Analog
Power supply
2
OUT
Analog
output
Output Voltage
3
CMPIN
Analog input
4
GND
Analog
5
RESET
Analog input
6
CMPOUT
Analog
output
7
VIN–
Analog input
Connect to shunt low side
8
VIN+
Analog input
Connect to shunt high side
Comparator input
Ground
Comparator reset pin, active low
Comparator output
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
MIN
MAX
UNIT
2.7
18
V
Current-Shunt Monitor
Analog Inputs, VIN+, VIN– Common Mode (2)
–18
18
V
–16
80
V
Comparator Analog Input and Reset Pins (2)
GND – 0.3
(Vs) + 0.3
V
Analog Output, OUT (2)
GND – 0.3
(Vs) + 0.3
V
GND – 0.3
18
V
5
mA
Supply Voltage, Vs
Differential (VIN+) – (VIN–)
Comparator Output, OUT
(2)
Input Current Into Any Pin (2)
Operating Temperature
–55
150
°C
Junction Temperature
–65
150
°C
Storage Temperature, Tstg
–65
150
°C
(1)
(2)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
This voltage may exceed the ratings shown if the current at that pin is limited to 5 mA.
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6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins (1)
±4000
Charged device model (CDM), per JEDEC specification JESD22-C101, all
pins (2)
±1000
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
VCM
Common-mode input voltage
–16
12
80
VS
Operating supply voltage
2.7
12
18
V
V
TA
Operating free-air temperature
–40
25
125
°C
6.4 Thermal Information
INA20x
THERMAL METRIC
(1)
D (SOIC)
DGK (SOIC)
8 PINS
8 PINS
UNIT
RθJA
Junction-to-ambient thermal resistance
110.5
162.2
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
50.4
37.7
°C/W
RθJB
Junction-to-board thermal resistance
52.7
82.9
°C/W
ψJT
Junction-to-top characterization parameter
7.8
1.3
°C/W
ψJB
Junction-to-board characterization parameter
51.9
81.4
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
6.5 Electrical Characteristics: Current-Shunt Monitor
At TA = 25°C, VS = 12 V, VCM = 12 V, VSENSE = 100 mV, RL = 10 kΩ to GND, RPULL-UP = 5.1 kΩ connected from CMPOUT to VS,
and CMPIN = GND, unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
0.15
(VS – 0.25) /
Gain
UNIT
INPUT
VSENSE
Full-scale sense input voltage
VSENSE = VIN+ – VIN–
VCM
Common-mode input range
TA = –40°C to 125°C
–16
VIN+ = –16 V to 80 V
80
CMR
Common-mode rejection
VIN+ = 12 V to 80 V, TA = –40°C to 125°C
100
TA = 25°C
Offset voltage, RTI (1)
VOS
80
100
V
dB
123
±0.5
V
dB
±2.5
mV
TA = 25°C to 125°C
±3
mV
TA = –40°C to 25°C
±3.5
mV
dVOS/dT
Offset voltage, RTI, vs
temperature
TMIN to TMAX, TA = –40°C to 125°C
PSR
Offset voltage, RTI, vs power
supply
VOUT = 2 V, VIN+ = 18 V, 2.7 V, TA = –40°C to 125°C
2.5
100
μV/V
IB
Input bias current, VIN– pin
TA = –40°C to 125°C
±9
±16
μA
(1)
4
μV/°C
5
Offset is extrapolated from measurements of the output at 20-mV and 100-mV VSENSE.
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Electrical Characteristics: Current-Shunt Monitor (continued)
At TA = 25°C, VS = 12 V, VCM = 12 V, VSENSE = 100 mV, RL = 10 kΩ to GND, RPULL-UP = 5.1 kΩ connected from CMPOUT to VS,
and CMPIN = GND, unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
OUTPUT (VSENSE ≥ 20 mV)
G
Gain
20
V/V
INA201
50
V/V
INA202
100
VSENSE = 20 mV to 100 mV
Gain error
VSENSE = 120 mV, VS = 16 V
±1%
±0.75%
±2.2%
±2%
VSENSE = 120 mV, VS = 16 V, TA = –40°C to 125°C
Nonlinearity error (3)
VSENSE = 20 mV to 100 mV
±3.5%
±0.002%
1.5
Ω
10
nF
300
mV
Output impedance
Maximum capacitive load
V/V
±0.2%
VSENSE = 20 mV to 100 mV, TA = –40°C to 125°C
Total output error (2)
RO
INA200
No Sustained Oscillation
OUTPUT (VSENSE < 20mV) (4)
Output
VOLTAGE OUTPUT
INA200, INA201,
INA202
–16 V ≤ VCM < 0 V
INA200
0 V ≤ VCM ≤ VS, VS = 5 V
0.4
V
INA201
0 V ≤ VCM ≤ VS, VS = 5 V
1
V
INA202
0 V ≤ VCM ≤ VS, VS = 5 V
2
V
INA200, INA201,
INA202
VS < VCM ≤ 80 V
300
mV
(5)
Output swing to the positive rail
Output wwing to GND
(6)
VIN– = 11 V, VIN+ = 12 V, TA = –40°C to 125°C
(Vs) – 0.15
(Vs) – 0.25
VIN– = 0 V, VIN+ = –0.5 V, TA = –40°C to 125°C
(GND) +
0.004
(GND) + 0.05
V
V
FREQUENCY RESPONSE
BW
Bandwidth
Phase margin
SR
INA200
CLOAD = 5 pF
500
kHz
INA201
CLOAD = 5 pF
300
kHz
INA202
CLOAD = 5 pF
200
kHz
CLOAD < 10 nF
Slew rate
Settling time (1%)
VSENSE = 10 mVPP to 100 mVPP,
CLOAD = 5 pF
40
°C
1
V/μs
2
μs
40
nV/√Hz
NOISE, RTI
Voltage noise density
(2)
(3)
(4)
(5)
(6)
Total output error includes effects of gain error and VOS.
Linearity is best fit to a straight line.
For details on this region of operation, see the Accuracy Variations section in the Device Functional Modes.
See Figure 8.
Specified by design.
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6.6 Electrical Characteristics: Comparator
At TA = 25°C, VS = 12 V, VCM = 12 V, VSENSE = 100 mV, RL = 10 kΩ to GND, and RPULL-UP = 5.1 kΩ connected from CMPOUT to
VS, unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
TA = 25°C
590
608
620
mV
TA = –40°C to 125°C
586
625
mV
OFFSET VOLTAGE
Threshold
Hysteresis (1)
TA = –40°C to 85°C
–8
mV
INPUT BIAS CURRENT (2)
Input bias current, VMPin PIN
0.005
Input bias current, VMPin PIN, vs temperature TA = –40°C to 125°C
10
nA
15
nA
INPUT VOLTAGE RANGE
Input voltage range, VMPin PIN
0 V to VS – 1.5 V
V
OUTPUT (OPEN-DRAIN)
Large-signal differential voltage gain
CMP VOUT 1 V to 4 V,
RL ≥ 15 kΩ Connected to 5 V
ILKG
High-level leakage current (3) (4)
VID = 0.4 V, VOH = VS
0.0001
1
μA
VOL
Low-level output voltage (3)
VID = –0.6 V, IOL = 2.35 mA
220
300
mV
RL to 5 V, CL = 15 pF, 100-mV Input
Step with 5-mV Overdrive
1.3
200
V/mV
RESPONSE TIME
Response time (5)
μs
RESET
RESET threshold (6)
1.1
Logic input impedance
Minimum RESET pulse width
RESET propagation delay
(1)
(2)
(3)
(4)
(5)
(6)
V
2
MΩ
1.5
μs
3
μs
Hysteresis refers to the threshold (the threshold specification applies to a rising edge of a noninverting input) of a falling edge on the
noninverting input of the comparator; refer to Figure 1.
Specified by design.
VID refers to the differential voltage at the comparator inputs.
Open-drain output can be pulled to the range of 2.7 to 18 V, regardless of VS.
The comparator response time specified is the interval between the input step function and the instant when the output crosses 1.4 V.
The RESET input has an internal 2 MΩ (typical) pull-down. Leaving RESET open results in a LOW state, with transparent comparator
operation.
6.7 Electrical Characteristics: General
At TA = 25°C, VS = 12 V, VCM = 12 V, VSENSE = 100 mV, RL = 10 kΩ to GND, RPULL-UP = 5.1 kΩ connected from CMPOUT to VS,
and CMPIN = 1 V, unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
18
V
1350
1800
μA
1850
μA
POWER SUPPLY
VS
IQ
Operating power supply
Quiescent current
TA = –40°C to 125°C
2.7
VOUT = 2 V
VSENSE = 0 mV, TA = –40°C to 125°C
Comparator power-on reset
threshold (1)
1.5
V
TEMPERATURE
θJA
(1)
6
Specified temperature
–40
125
°C
Operating temperature
–55
150
°C
Storage temperature
–65
150
Thermal resistance
°C
VSSOP-8 Surface-Mount
200
°C/W
SOIC-8
150
°C/W
The INA200, INA201, and INA202 are designed to power-up with the comparator in a defined reset state as long as RESET is open or
grounded. The comparator is in reset as long as the power supply is below the voltage shown here. The comparator assumes a state
based on the comparator input above this supply voltage. If RESET is high at power-up, the comparator output comes up high and
requires a reset to assume a low state, if appropriate.
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VTHRESHOLD
0.592V 0.6V
Input Voltage
Hysteresis = VTHRESHOLD - 8mV
Figure 1. Typical Comparator Hysteresis
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6.8 Typical Characteristics
At TA = 25°C, VS = 12 V, VIN+ = 12 V, and VSENSE = 100 mV, unless otherwise noted.
45
G = 50
35
Gain (dB)
30
G = 100
40
G = 50
35
Gain (dB)
45
CLOAD = 1000pF
G = 100
40
G = 20
25
20
30
20
15
15
10
10
5
G = 20
25
5
10k
100k
10k
1M
100k
Frequency (Hz)
Figure 2. Gain vs Frequency
Figure 3. Gain vs Frequency
20
140
18
130
Common-Mode and
Power-Supply Rejection (dB)
100V/V
16
VOUT (V)
14
50V/V
12
10
8
20V/V
6
4
120
CMR
110
100
90
PSR
80
70
60
50
2
40
0
20
100
200
300
400
500
600
700
800
10
900
100
1k
Figure 4. Gain Plot
100k
Figure 5. Common-Mode and Power-Supply Rejection vs
Frequency
4.0
0.1
3.5
0.09
0.08
3.0
Output Error (% )
Output Error
(% error of the ideal output value)
10k
Frequency (Hz)
VDIFFERENTIAL (mV)
2.5
2.0
1.5
1.0
0.07
0.06
0.05
0.04
0.03
0.02
0.5
0.01
0
0
50
100 150
200
250 300
350 400 450 500
0
-16 -12 -8 -4
VSENSE (mV)
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0
4
8
12 16 20
...
76 80
Common-Mode Voltage (V)
Figure 6. Output Error vs VSENSE
8
1M
Frequency (Hz)
Figure 7. Output Error vs Common-Mode Voltage
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Typical Characteristics (continued)
At TA = 25°C, VS = 12 V, VIN+ = 12 V, and VSENSE = 100 mV, unless otherwise noted.
3.5
12
11
VS = 12V
10
2.5
+25°C
8
-40°C
+125°C
7
6
VS = 3V
5
Sourcing Current
+25°C
4
-40°C
Output stage is designed
to source current. Current
sinking capability is
approximately 400mA.
3
2
1
+125°C
0
0
IQ (mA)
Output Voltage (V)
3.0
Sourcing Current
9
2.0
1.5
1.0
0.5
0
5
10
20
15
25
30
0
2
1
Output Current (mA)
IQ (mA)
1.50
1.25
VS = 12V
1.00
VS = 2.7V
VSENSE = 0mV
7
6
8
9
10
Figure 9. Quiescent Current vs Output Voltage
Output Short-Circuit Current (mA)
VS = 2.7V
VS = 12V
0.75
0.50
-16 -12 -8 -4
5
34
VSENSE = 100mV
1.75
4
Output Voltage (V)
Figure 8. Positive Output Voltage Swing vs Output Current
2.00
3
-40°C
30
+25°C
26
+125°C
22
18
14
10
6
0
4
8
12 16 20 24 28 32 36
2.5 3.5
4.5
VCM (V)
5.5 6.5
7.5
8.5
9.5 10.5 11.5 17
18
Supply Voltage (V)
Figure 10. Quiescent Current vs Common-Mode Voltage
Figure 11. Output Short-Circuit Current vs Supply Voltage
G = 20
Output Voltage (50mV/div)
Output Voltage (500mV/div)
G = 20
VSENSE = 20mV to 30mV
VSENSE = 20mV to 110mV
Time (2ms/div)
Time (2ms/div)
Figure 12. Step Response
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Figure 13. Step Response
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Typical Characteristics (continued)
At TA = 25°C, VS = 12 V, VIN+ = 12 V, and VSENSE = 100 mV, unless otherwise noted.
G = 50
Output Voltage (50mV/div)
Output Voltage (100mV/div)
G = 20
VSENSE = 90mV to 100mV
VSENSE = 20mV to 30mV
Time (2ms/div)
Time (5ms/div)
Figure 14. Step Response
Figure 15. Step Response
G = 50
Output Voltage (1V/div)
Output Voltage (100mV/div)
G = 50
VSENSE = 90mV to 100mV
VSENSE = 20mV to 110mV
Time (5ms/div)
Time (5ms/div)
Figure 16. Step Response
Figure 17. Step Response
600
G = 100
Output Voltage (2V/div)
500
VOL (mV)
400
300
200
100
0
VSENSE = 20mV to 110mV
0
1
Figure 18. Step Response
10
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2
3
4
5
6
ISINK (mA)
Time (10ms/div)
Figure 19. Comparator VOL vs ISINK
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Typical Characteristics (continued)
At TA = 25°C, VS = 12 V, VIN+ = 12 V, and VSENSE = 100 mV, unless otherwise noted.
600
602
Comparator Trip Point (mV)
599
Reset Voltage (mV)
598
597
596
595
594
593
592
601
600
599
598
597
591
596
590
2
4
6
8
10
12
14
16
18
-50
0
-25
Supply Voltage (V)
Figure 20. Comparator Trip Point vs Supply Voltage
50
75
100
125
Figure 21. Comparator Trip Point vs Temperature
200
1.2
175
1.0
Reset Voltage (V)
Propagation Delay (ns)
25
Temperature (°C)
150
125
100
75
0.8
0.6
0.4
0.2
50
0
0
20
40
60
80
100 120 140
160 180
2
200
4
Overdrive Voltage (mV)
6
8
10
12
14
16
18
Supply Voltage (V)
Figure 22. Comparator Propagation Delay vs Overdrive
Voltage
Figure 23. Comparator Reset Voltage vs Supply Voltage
300
Propagation Delay (ns)
275
Input
200mV/div
250
225
200
175
Output
2V/div
150
125
-50
-25
0
25
50
75
100
125
VOD = 5mV
2ms/div
Temperature (°C)
Figure 24. Comparator Propagation Delay vs Temperature
Figure 25. Comparator Propagation Delay
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7 Detailed Description
7.1 Overview
The INA200, INA201, and INA202 devices are high-side current-shunt monitors with voltage output. The
INA200–INA202 devices can sense drops across shunts at common-mode voltages from –16 V to 80 V. The
INA200–INA202 devices are available with three output voltage scales: 20 V/V, 50 V/V, and 100 V/V, with up to
500-kHz bandwidth. The INA200, INA201, and INA202 devices also incorporate an open-drain comparator and
internal reference providing a 0.6-V threshold. External dividers are used to set the current trip point. The
comparator includes a latching capability, which can be made transparent by grounding (or leaving open) the
RESET pin. The INA200, INA201, and INA202 devices operate from a single 2.7 to 18-V supply, drawing a
maximum of 1800 μA of supply current. Package options include the very small MSOP-8 and the SO-8. All
versions are specified over the extended operating temperature range of –40°C to 125°C.
7.2 Functional Block Diagram
VS
VIN+
OUT
G
VIN
0.6-V
Reference
CMPIN
Comparator
GND
CMPOUT
RESET
7.3 Feature Description
7.3.1 Basic Connections
Figure 26 shows the basic connections of the INA200, INA201, and INA202 devices. The input pins, VIN+ and
VIN–, should be connected as closely as possible with kelvin connections to the shunt resistor to minimize any
resistance in series with the shunt resistance.
Power-supply bypass capacitors are required for stability. Applications with noisy or high-impedance power
supplies may require additional decoupling capacitors to reject power-supply noise. Connect bypass capacitors
close to the device pins.
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RSHUNT
3mW
Load Supply
-18V to +80V
Load
5V Supply
INA200
(G = 20)
1
VS
2 OUT
CBYPASS
0.01mF
G
VIN+
8
VIN-
7
CMPOUT
6
RESET
5
RPULL-UP
4.7kW
0.6V
Reference
R1
3 CMPIN
Comparator
R2
4
GND
Transparent/Reset
Latch
Figure 26. INA200 Basic Connections
7.3.2 Selecting RS
The value chosen for the shunt resistor, RS, depends on the application and is a compromise between smallsignal accuracy and maximum permissible voltage loss in the measurement line. High values of RS provide better
accuracy at lower currents by minimizing the effects of offset, while low values of RS minimize voltage loss in the
supply line. For most applications, best performance is attained with an RS value that provides a full-scale shunt
voltage range of 50 mV to 100 mV. Maximum input voltage for accurate measurements is 500 mV, but output
voltage is limited by supply.
7.3.3 Comparator
The INA200, INA201, and INA202 devices incorporate an open-drain comparator. This comparator typically has
2 mV of offset and a 1.3-μs (typical) response time. The output of the comparator latches and is reset through
the RESET pin; see Figure 28.
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RSHUNT << RFILTER
3mW
VSUPPLY
Load
RFILTER < 100W
INA200-INA202
RFILTER <100W
CFILTER
VIN+
VS
1
OUT
2
8
VIN-
CMPIN
3
GND
4
G
0.6V
Reference
7
f-3dB
6
CMPOUT
f-3dB =
Comparator
5
1
2p(2RFILTER)CFILTER
RESET
SO-14, TSSOP-14
Figure 27. Input Filter (Gain Error: 1.5% to 2.8%)
0.6V
VIN
0V
CMPOUT
RESET
Figure 28. Comparator Latching Capability
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Shunt
Option 1
Shunt
Option 2
Supply
R3
To VIN+
To VIN-
To VIN-
To VIN+
4.5V to 5.5V
R4
Q1
2N3904
Load
1
VS
INA200 (G = 20)
INA201 (G = 50)
INA202 (G = 100)
To VIN+
2 OUT
G
VIN+
8
VIN-
7
CMPOUT
6
RESET
5
From
Shunt Option
1, 2, or 3
Shunt
Option 3
To VIN-
0.6V
Reference
R1
3 CMPIN
Comparator
R2
4
GND
RESET
NOTE: Q1 cascodes the comparator output to drive a high-side FET (the 2N3904 shown is good up to 60V). The shunt could be located in
any one of the three locations shown. The latching capability should be used in shutdown applications to prevent oscillation at the trip point.
Figure 29. High-Side Switch Overcurrent Shutdown
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RSHUNT
Supply
4.5V to 5.5V
INA200 (G = 20)
INA201 (G = 50)
INA202 (G = 100)
1
VS
2 OUT
G
VIN+
8
VIN-
7
CMPOUT
6
RESET
5
R5
2.2kW
0.6V
Reference
R1
3 CMPIN
Comparator
R2
4
GND
1
VS
RESET
INA200 (G = 20)
INA201 (G = 50)
INA202 (G = 100)
2 OUT
G
R6
2.2kW
VIN+
8
VIN-
7
CMPOUT
6
RESET
5
0.6V
Reference
R3
3 CMPIN
Comparator
R4
4
GND
CMPOUT
R7
200kW
RESET
NOTE: It is possible to set different limits for each direction.
Figure 30. Bidirectional Overcurrent Comparator
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7.4 Device Functional Modes
7.4.1 Input Filtering
An obvious and straightforward location for filtering is at the output of the INA200, INA201, and INA202 series;
however, this location negates the advantage of the low output impedance of the internal buffer. The only other
option for filtering is at the input pins of the INA200, INA201, and INA202 devices, which is complicated by the
internal 5 kΩ + 30% input impedance; this is illustrated in Figure 27. Using the lowest possible resistor values
minimizes both the initial shift in gain and effects of tolerance. The effect on initial gain is given by Equation 1:
Gain Error % = 100 - 100 ´
5kW
5kW + RFILT
(1)
Total effect on gain error can be calculated by replacing the 5-kΩ term with 5 kΩ – 30%, (or 3.5 kΩ) or 5 kΩ +
30% (or 6.5 kΩ). The tolerance extremes of RFILT can also be inserted into the equation. If a pair of 100 Ω 1%
resistors are used on the inputs, the initial gain error will be 1.96%. Worst-case tolerance conditions will always
occur at the lower excursion of the internal 5-kΩ resistor (3.5 kΩ), and the higher excursion of RFILT – 3% in this
case.
The specified accuracy of the INA200, INA201, and INA202 devices must then be combined in addition to these
tolerances. While this discussion treated accuracy worst-case conditions by combining the extremes of the
resistor values, it is appropriate to use geometric mean or root sum square calculations to total the effects of
accuracy variations.
7.4.2 Accuracy Variations as a Result of VSENSE and Common-Mode Voltage
The accuracy of the INA200, INA201, and INA202 current shunt monitors is a function of two main variables:
VSENSE (VIN+ – VIN–) and common-mode voltage, VCM, relative to the supply voltage, VS. VCM is expressed as
(VIN+ + VIN–)/2; however, in practice, VCM is seen as the voltage at VIN+ because the voltage drop across VSENSE
is usually small.
This section addresses the accuracy of these specific operating regions:
• Normal Case 1: VSENSE ≥ 20 mV, VCM ≥ VS
• Normal Case 2: VSENSE ≥ 20 mV, VCM < VS
• Low VSENSE Case 1: VSENSE < 20 mV, –16 V ≤ VCM < 0
• Low VSENSE Case 2: VSENSE < 20 mV, 0 V ≤ VCM ≤ VS
• Low VSENSE Case 3: VSENSE < 20 mV, VS < VCM ≤ 80 V
7.4.2.1 Normal Case 1: VSENSE ≥ 20 mv, VCM ≥ VS
This region of operation provides the highest accuracy. Here, the input offset voltage is characterized and
measured using a two-step method. First, the gain is determined by Equation 2.
VOUT1 - VOUT2
G=
100mV - 20mV
where
•
•
VOUT1 = Output Voltage with VSENSE = 100 mV
VOUT2 = Output Voltage with VSENSE = 20 mV
(2)
Then the offset voltage is measured at VSENSE = 100 mV and referred to the input (RTI) of the current shunt
monitor, as shown in Electrical Characteristics: Current-Shunt Monitor.
VOUT1
VOSRTI (Referred-To-Input) =
- 100mV
G
(3)
In the Typical Characteristics, Figure 7 curve shows the highest accuracy for the this region of operation. In this
plot, VS = 12 V; for VCM ≥ 12 V, the output error is at its minimum. This case is also used to create the VSENSE ≥
20-mV output specifications in Electrical Characteristics: Current-Shunt Monitor .
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Device Functional Modes (continued)
7.4.2.2 Normal Case 2: VSENSE ≥ 20 mv, VCM < VS
This region of operation has slightly less accuracy than Normal Case 1 as a result of the common-mode
operating area in which the part functions, as seen in the Figure 7 curve (Figure 7). As noted, for this graph VS =
12 V; for VCM < 12 V, the Output Error increases as VCM becomes less than 12 V, with a typical maximum error
of 0.005% at the most negative VCM = –16 V.
7.4.2.3 Low VSENSE Case 1: VSENSE < 20 mV, –16 V ≤ VCM < 0;
and Low VSENSE Case 3: VSENSE < 20 mV, VS < VCM ≤ 80 V
Although the INA200 family of devices are not designed for accurate operation in either of these regions, some
applications are exposed to these conditions. For example, when monitoring power supplies that are switched on
and off while VS is still applied to the INA200, INA201, or INA202 devices, it is important to know what the
behavior of the devices will be in these regions.
As VSENSE approaches 0 mV, in these VCM regions, the device output accuracy degrades. A larger-than-normal
offset can appear at the current shunt monitor output with a typical maximum value of VOUT = 300 mV for
VSENSE = 0 mV. As VSENSE approaches 20 mV, VOUT returns to the expected output value with accuracy as
specified in the Electrical Characteristics: Current-Shunt Monitor. Figure 31 illustrates this effect using the
INA202 (Gain = 100).
2.0
1.8
1.6
VOUT (V)
1.4
1.2
Actual
1.0
0.8
Ideal
0.6
0.4
0.2
0
0
2
4
6
8
10
12
14
16
18
20
VSENSE (mV)
Figure 31. Example For Low VSENSE Cases 1 and 3 (INA202, Gain = 100)
7.4.2.4 Low VSENSE Case 2: VSENSE < 20 mV, 0 V ≤ VCM ≤ VS
This region of operation is the least accurate for the INA200 family. To achieve the wide input common-mode
voltage range, these devices use two op amp front ends in parallel. One op amp front end operates in the
positive input common-mode voltage range, and the other in the negative input region. For this case, neither of
these two internal amplifiers dominates and overall loop gain is very low. Within this region, VOUT approaches
voltages close to linear operation levels for Normal Case 2. This deviation from linear operation becomes
greatest the closer VSENSE approaches 0 V. Within this region, as VSENSE approaches 20 mV, device operation is
closer to that described by Normal Case 2. Figure 32 illustrates this behavior for the INA202. The VOUT maximum
peak for this case is tested by maintaining a constant VS, setting VSENSE = 0 mV and sweeping VCM from 0 V to
VS. The exact VCM at which VOUT peaks during this test varies from part to part, but the VOUT maximum peak is
tested to be less than the specified VOUT tested limit.
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Device Functional Modes (continued)
2.4
2.2 INA202 VOUT Tested Limit
(1)
VCM1
2.0
Ideal
1.8
VCM2
VOUT (V)
1.6
1.4
VCM3
1.2
1.0
0.8
VOUT tested limit at
VSENSE = 0mV, 0 £ VCM1 £ VS.
VCM4
0.6
VCM2, VCM3, and VCM4 illustrate the variance
from part to part of the VCM that can cause
maximum VOUT with VSENSE < 20mV.
0.4
0.2
0
0
2
4
6
8
10
12
14
16
18
20
22
24
VSENSE (mV)
NOTE: (1) INA200 VOUT Tested Limit = 0.4V. INA201 VOUT Tested Limit = 1V.
Figure 32. Example For Low VSENSE Case 2 (INA202, Gain = 100)
7.4.3 Transient Protection
The –16 to 80-V common-mode range of the INA200, INA201, and INA202 devices is ideal for withstanding
automotive fault conditions ranging from 12-V battery reversal up to 80-V transients, since no additional
protective components are needed up to those levels. In the event that the INA200, INA201, and INA202 devices
are exposed to transients on the inputs in excess of their ratings, then external transient absorption with
semiconductor transient absorbers (such as Zeners) will be necessary. Use of MOVs or VDRs is not
recommended except when they are used in addition to a semiconductor transient absorber. Select the transient
absorber such that it will never allow the INA200, INA201, and INA202 devices to be exposed to transients
greater than 80 V (that is, allow for transient absorber tolerance, as well as additional voltage due to transient
absorber dynamic impedance). Despite the use of internal Zener-type ESD protection, the INA200, INA201, and
INA202 devices do not lend themselves to using external resistors in series with the inputs since the internal gain
resistors can vary up to ±30%. (If gain accuracy is not important, then resistors can be added in series with the
INA200, INA201, and INA202 inputs with two equal resistors on each input.)
7.4.4 Output Voltage Range
The output of the INA200, INA201, and INA202 devices is accurate within the output voltage swing range set by
the power supply pin, Vs. This performance is best illustrated when using the INA202 (a gain of 100 version),
where a 100-mV full-scale input from the shunt resistor requires an output voltage swing of 10 V, and a powersupply voltage sufficient to achieve 10 V on the output.
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The INA20x series is designed to enable easy configuration for detecting overcurrent conditions and current
monitoring in an application. This device is individually targeted towards overcurrent detection of a single
threshold. However, this device can also be paired with additional devices and circuitry to create more complex
monitoring functional blocks.
8.2 Typical Application
Shunt
Option 1
Supply
To VIN+
4.5V to 5.5V
To VIN-
Load
To VIN+
INA200 (G = 20)
INA201 (G = 50)
INA202 (G = 100)
1
VS
2 OUT
G
R4
2.2kW
VIN+
8
VIN-
7
From
Shunt Option
1, 2, or 3
To VIN-
R1
22kW
0.6V
Reference
R1
Shunt
Option 2
To VIN+
Shunt
Option 3
3 CMPIN
Comparator
R2
4
GND
CMPOUT
6
RESET
5
Q1
2N3904
To VIN-
RESET
NOTE: In this case, Q1 is used to invert the comparator output.
Figure 33. Low-Side Switch Overcurrent Shutdown
8.2.1 Design Requirements
The device measures current through a resistive shunt with current flowing in one direction, thus enabling
detection of an overcurrent event only when the differential input voltage exceeds the threshold limit. When the
current reaches the set limit of the divider R1/R2, the output of CMPOUT will transition high which will turn Q1 on
and pull the gate of the Pass-FET low and turn off the flow off current.
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Typical Application (continued)
8.2.2 Detailed Design Procedure
Figure 33 shows the basic connections of the device. The input terminals, IN+ and IN –, should be connected as
closely as possible to the current-sensing resistor to minimize any resistance in series with the shunt resistance.
Additional resistance between the current-sensing resistor and input terminals can result in errors in the
measurement. When input current flows through this external input resistance, the voltage developed across the
shunt resistor can differ from the voltage reaching the input terminals.
Use the Gain of the INA20x and shunt value to calculate the OUT voltage for the desired trip current. Configure
R1 and R2 so that the current trip point is equal the 0.6-V reference voltage.
8.2.3 Application Curve
1.2
Comp_IN
I_Load
CMP_OUT
OUT
1
0.8
0.6
0.4
0.2
0
0
0.1
0.2
0.3
0.4
0.5
*Time
0.6
0.7
0.8
0.9
1
Figure 34. Low-Side Switch Overcurrent Shutdown Response
9 Power Supply Recommendations
The input circuitry of the INA200, INA201, and INA202 devices can accurately measure beyond the power-supply
voltage, Vs. For example, the Vs power supply can be 5 V, whereas the load power-supply voltage is up to 80 V.
The output voltage range of the OUT pin, however, is limited by the voltages on the power-supply pin.
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10 Layout
10.1 Layout Guidelines
•
•
Connect the input pins to the sensing resistor using a Kelvin or 4-wire connection. This connection technique
ensures that only the current-sensing resistor impedance is detected between the input pins. Poor routing of
the current-sensing resistor commonly results in additional resistance present between the input pins. Given
the very low ohmic value of the current resistor, any additional high-current carrying impedance can cause
significant measurement errors.
The power-supply bypass capacitor must be placed as close as possible to the supply and ground pins. The
recommended value of this bypass capacitor is 0.1 μF. Additional decoupling capacitance can be added to
compensate for noisy or high-impedance power supplies.
10.2 Layout Example
Via to Power or Ground Plane
Via to Internal Layer
Supply Voltage
VS
VIN+
OUT
VIN-
Shunt Resistor
Supply Bypass
Capacitor
R1
CMPIN
CMPOUT
GND
RESET
R2
RPULL-UP
RESET
Output Signal
Figure 35. INA20x Layout Example
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11 Device and Documentation Support
11.1 Related Links
The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to sample or buy.
Table 1. Related Links
PARTS
PRODUCT FOLDER
SAMPLE & BUY
TECHNICAL
DOCUMENTS
TOOLS &
SOFTWARE
SUPPORT &
COMMUNITY
INA200
Click here
Click here
Click here
Click here
Click here
INA201
Click here
Click here
Click here
Click here
Click here
INA202
Click here
Click here
Click here
Click here
Click here
11.2 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.3 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.4 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
www.ti.com
15-Apr-2017
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
INA200AID
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
INA
200A
INA200AIDG4
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
INA
200A
INA200AIDGKR
ACTIVE
VSSOP
DGK
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAUAG
Level-2-260C-1 YEAR
-40 to 125
BQH
INA200AIDGKRG4
ACTIVE
VSSOP
DGK
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAUAG
Level-2-260C-1 YEAR
-40 to 125
BQH
INA200AIDGKT
ACTIVE
VSSOP
DGK
8
250
Green (RoHS
& no Sb/Br)
CU NIPDAUAG
Level-2-260C-1 YEAR
-40 to 125
BQH
INA200AIDGKTG4
ACTIVE
VSSOP
DGK
8
250
Green (RoHS
& no Sb/Br)
CU NIPDAUAG
Level-2-260C-1 YEAR
-40 to 125
BQH
INA200AIDR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
INA
200A
INA200AIDRG4
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
INA
200A
INA201AID
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
INA
201A
INA201AIDG4
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
INA
201A
INA201AIDGKR
ACTIVE
VSSOP
DGK
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU |
CU NIPDAUAG
Level-2-260C-1 YEAR
-40 to 125
BQJ
INA201AIDGKRG4
ACTIVE
VSSOP
DGK
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
BQJ
INA201AIDGKT
ACTIVE
VSSOP
DGK
8
250
Green (RoHS
& no Sb/Br)
CU NIPDAU |
CU NIPDAUAG
Level-2-260C-1 YEAR
-40 to 125
BQJ
INA201AIDGKTG4
ACTIVE
VSSOP
DGK
8
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
BQJ
INA201AIDR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
INA
201A
INA201AIDRG4
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
INA
201A
INA202AID
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
INA
202A
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
15-Apr-2017
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
INA202AIDGKR
ACTIVE
VSSOP
DGK
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU |
CU NIPDAUAG
Level-2-260C-1 YEAR
-40 to 125
BQL
INA202AIDGKT
ACTIVE
VSSOP
DGK
8
250
Green (RoHS
& no Sb/Br)
CU NIPDAU |
CU NIPDAUAG
Level-2-260C-1 YEAR
-40 to 125
BQL
INA202AIDGKTG4
ACTIVE
VSSOP
DGK
8
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
BQL
INA202AIDR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
INA
202A
INA202AIDRG4
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
INA
202A
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Addendum-Page 2
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
15-Apr-2017
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF INA200, INA201, INA202 :
• Automotive: INA200-Q1, INA201-Q1, INA202-Q1
NOTE: Qualified Version Definitions:
• Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects
Addendum-Page 3
PACKAGE MATERIALS INFORMATION
www.ti.com
28-Sep-2016
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
INA200AIDGKR
VSSOP
DGK
8
INA200AIDGKT
VSSOP
DGK
INA200AIDR
SOIC
D
INA201AIDGKR
VSSOP
INA201AIDGKR
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
2500
330.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
8
250
330.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
8
2500
330.0
12.4
6.4
5.2
2.1
8.0
12.0
Q1
DGK
8
2500
330.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
VSSOP
DGK
8
2500
330.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
INA201AIDGKT
VSSOP
DGK
8
250
330.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
INA201AIDGKT
VSSOP
DGK
8
250
180.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
INA201AIDR
SOIC
D
8
2500
330.0
12.4
6.4
5.2
2.1
8.0
12.0
Q1
INA202AIDGKR
VSSOP
DGK
8
2500
330.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
INA202AIDGKR
VSSOP
DGK
8
2500
330.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
INA202AIDGKT
VSSOP
DGK
8
250
180.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
INA202AIDGKT
VSSOP
DGK
8
250
330.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
INA202AIDR
SOIC
D
8
2500
330.0
12.4
6.4
5.2
2.1
8.0
12.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
28-Sep-2016
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
INA200AIDGKR
VSSOP
DGK
8
2500
366.0
364.0
50.0
INA200AIDGKT
VSSOP
DGK
8
250
366.0
364.0
50.0
INA200AIDR
SOIC
D
8
2500
367.0
367.0
35.0
INA201AIDGKR
VSSOP
DGK
8
2500
367.0
367.0
35.0
INA201AIDGKR
VSSOP
DGK
8
2500
366.0
364.0
50.0
INA201AIDGKT
VSSOP
DGK
8
250
366.0
364.0
50.0
INA201AIDGKT
VSSOP
DGK
8
250
210.0
185.0
35.0
INA201AIDR
SOIC
D
8
2500
367.0
367.0
35.0
INA202AIDGKR
VSSOP
DGK
8
2500
367.0
367.0
35.0
INA202AIDGKR
VSSOP
DGK
8
2500
366.0
364.0
50.0
INA202AIDGKT
VSSOP
DGK
8
250
210.0
185.0
35.0
INA202AIDGKT
VSSOP
DGK
8
250
366.0
364.0
50.0
INA202AIDR
SOIC
D
8
2500
367.0
367.0
35.0
Pack Materials-Page 2
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