ON MC74VHC04DR2G Hex inverter Datasheet

MC74VHC04
Hex Inverter
The MC74VHC04 is an advanced high speed CMOS inverter
fabricated with silicon gate CMOS technology. It achieves high speed
operation similar to equivalent Bipolar Schottky TTL while
maintaining CMOS low power dissipation.
The internal circuit is composed of three stages, including a buffer
output which provides high noise immunity and stable output. The
inputs tolerate voltages up to 7 V, allowing the interface of 5 V systems
to 3 V systems.
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MARKING DIAGRAMS
14
Features
•
•
•
•
•
•
•
•
•
•
•
•
High Speed: tPD = 3.8 ns (Typ) at VCC = 5 V
Low Power Dissipation: ICC = 2 mA (Max) at TA = 25°C
High Noise Immunity: VNIH = VNIL = 28% VCC
Power Down Protection Provided on Inputs
Balanced Propagation Delays
Designed for 2 V to 5.5 V Operating Range
Low Noise: VOLP = 0.8 V (Max)
Pin and Function Compatible with Other Standard Logic Families
Latchup Performance Exceeds 300 mA
ESD Performance: HBM > 2000 V; Machine Model > 200 V
Chip Complexity: 36 FETs or 9 Equivalent Gates
These Devices are Pb−Free and are RoHS Compliant
SOIC−14
D SUFFIX
CASE 751A
1
VHC04G
AWLYWW
1
14
VHC
04
ALYWG
G
TSSOP−14
DT SUFFIX
CASE 948G
1
1
A
WL, L
Y
WW, W
G or G
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
A1
1
2
FUNCTION TABLE
Y1
A5
Y5
A4
Y4
Y6
Figure 1. Logic Diagram
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 6
H
L
8
12
L
H
9
Y3
7
13
Y6
Y5
GND
A6
Y
10
10
A3
6
11
Y4
Y2
5
A5
A
Y3
Y=A
A4
Outputs
11
8
Inputs
A6
12
9
A2
VCC
13
6
Y1
4
5
Y2
14
4
3
A3
3
2
A2
1
A1
Figure 2. Pinout:
14−Lead Packages
(Top View)
1
ORDERING INFORMATION
Device
Package
Shipping†
MC74VHC04DR2G
SOIC−14
(Pb−Free)
2500 / Tape &
Reel
MC74VHC04DTR2G TSSOP−14
(Pb−Free)
2500 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
MC74VHC04/D
MC74VHC04
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MAXIMUM RATINGS
Symbol
Value
Unit
VCC
DC Supply Voltage
Parameter
–0.5 to + 7.0
V
Vin
DC Input Voltage
–0.5 to + 7.0
V
Vout
DC Output Voltage
–0.5 to VCC + 0.5
V
IIK
Input Diode Current
−20
mA
IOK
Output Diode Current
± 20
mA
Iout
DC Output Current, per Pin
± 25
mA
ICC
DC Supply Current, VCC and GND Pins
± 50
mA
PD
Power Dissipation in Still Air,
500
450
mW
Tstg
Storage Temperature
– 65 to + 150
_C
SOIC Package†
TSSOP Package†
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance circuit. For proper operation, Vin and
Vout should be constrained to the
range GND v (Vin or Vout) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or V CC ).
Unused outputs must be left open.
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any
of these limits are exceeded, device functionality should not be assumed, damage may occur
and reliability may be affected.
†Derating — SOIC Package: – 7 mW/_C from 65_ to 125_C
TSSOP Package: − 6.1 mW/_C from 65_ to 125_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
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RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
2.0
5.5
V
DC Input Voltage
0
5.5
V
DC Output Voltage
0
VCC
V
−40
+ 85
_C
0
0
100
20
ns/V
VCC
DC Supply Voltage
Vin
Vout
TA
Operating Temperature
tr, tf
Input Rise and Fall Time
VCC = 3.3V ±0.3V
VCC = 5.0V ±0.5V
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
VCC
V
Test Conditions
VIH
Minimum High−Level
Input Voltage
2.0
3.0 to
5.5
VIL
Maximum Low−Level
Input Voltage
2.0
3.0 to
5.5
VOH
Minimum High−Level
Output Voltage
Vin = VIH or VIL
IOH = −50μA
Vin = VIH or VIL
IOH = −4mA
IOH = −8mA
VOL
Maximum Low−Level
Output Voltage
Vin = VIH or VIL
IOL = 50μA
TA = 25°C
Min
Max
1.50
VCC x 0.7
Min
2.0
3.0
4.5
1.9
2.9
4.4
3.0
4.5
2.58
3.94
Max
1.50
VCC x 0.7
0.50
VCC x 0.3
2.0
3.0
4.5
Vin = VIH or VIL
IOL = 4mA
IOL = 8mA
Typ
TA = −40 to 85°C
2.0
3.0
4.5
Unit
V
0.50
VCC x 0.3
V
V
1.9
2.9
4.4
2.48
3.80
0.0
0.0
0.0
0.1
0.1
0.1
0.1
0.1
0.1
3.0
4.5
0.36
0.36
0.44
0.44
V
Iin
Maximum Input
Leakage Current
Vin = 5.5 or GND
0 to 5.5
± 0.1
± 0.1
μA
ICC
Maximum Quiescent
Supply Current
Vin = VCC or GND
5.5
2.0
20.0
μA
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2
MC74VHC04
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0ns)
TA = 25°C
Symbol
Parameter
tPLH,
tPHL
Maximum Propagation Delay,
A or B to Y
Cin
Test Conditions
Min
TA = −40 to 85°C
Typ
Max
Min
Max
Unit
ns
VCC = 3.3 ± 0.3V
CL = 15pF
CL = 50pF
5.0
7.5
7.1
10.6
1.0
1.0
8.5
12.0
VCC = 5.0 ± 0.5V
CL = 15pF
CL = 50pF
3.8
5.3
5.5
7.5
1.0
1.0
6.5
8.5
4
10
Maximum Input Capacitance
10
pF
Typical @ 25°C, VCC = 5.0V
18
CPD
Power Dissipation Capacitance (Per Inverter) (Note 1)
pF
1. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC / 6 (per buffer). CPD is used to determine the
no−load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC.
NOISE CHARACTERISTICS (Input tr = tf = 3.0ns, CL = 50pF, VCC = 5.0V)
TA = 25°C
Symbol
Characteristic
Typ
Max
Unit
VOLP
Quiet Output Maximum Dynamic VOL
0.4
0.8
V
VOLV
Quiet Output Minimum Dynamic VOL
−0.4
−0.8
V
VIHD
Minimum High Level Dynamic Input Voltage
3.5
V
VILD
Maximum Low Level Dynamic Input Voltage
1.5
V
TEST POINT
VCC
A
OUTPUT
50%
DEVICE
UNDER
TEST
GND
tPLH
Y
tPHL
CL*
50% VCC
*Includes all probe and jig capacitance
Figure 3. Switching Waveforms
Figure 4. Test Circuit
INPUT
Figure 5. Input Equivalent Circuit
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3
MC74VHC04
PACKAGE DIMENSIONS
SOIC−14
CASE 751A−03
ISSUE K
D
A
B
14
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE PROTRUSION
SHALL BE 0.13 TOTAL IN EXCESS OF AT
MAXIMUM MATERIAL CONDITION.
4. DIMENSIONS D AND E DO NOT INCLUDE
MOLD PROTRUSIONS.
5. MAXIMUM MOLD PROTRUSION 0.15 PER
SIDE.
8
A3
E
H
L
1
0.25
M
DETAIL A
7
B
13X
M
0.25
M
C A
S
B
S
DETAIL A
h
A
e
DIM
A
A1
A3
b
D
E
e
H
h
L
M
b
X 45 _
M
A1
C
SEATING
PLANE
MILLIMETERS
MIN
MAX
1.35
1.75
0.10
0.25
0.19
0.25
0.35
0.49
8.55
8.75
3.80
4.00
1.27 BSC
5.80
6.20
0.25
0.50
0.40
1.25
0_
7_
SOLDERING FOOTPRINT*
6.50
14X
1.18
1
1.27
PITCH
14X
0.58
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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4
INCHES
MIN
MAX
0.054 0.068
0.004 0.010
0.008 0.010
0.014 0.019
0.337 0.344
0.150 0.157
0.050 BSC
0.228 0.244
0.010 0.019
0.016 0.049
0_
7_
MC74VHC04
PACKAGE DIMENSIONS
TSSOP−14
CASE 948G
ISSUE B
14X K REF
0.10 (0.004)
0.15 (0.006) T U
M
T U
V
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
MOLD FLASH OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL
NOT EXCEED 0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.08
(0.003) TOTAL IN EXCESS OF THE K
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE
DETERMINED AT DATUM PLANE −W−.
S
S
N
2X
14
L/2
0.25 (0.010)
8
M
B
−U−
L
PIN 1
IDENT.
F
7
1
0.15 (0.006) T U
N
S
DETAIL E
K
A
−V−
ÉÉÉ
ÇÇÇ
ÇÇÇ
ÉÉÉ
K1
J J1
SECTION N−N
−W−
C
0.10 (0.004)
−T− SEATING
PLANE
D
H
G
DETAIL E
DIM
A
B
C
D
F
G
H
J
J1
K
K1
L
M
MILLIMETERS
INCHES
MIN
MAX
MIN MAX
4.90
5.10 0.193 0.200
4.30
4.50 0.169 0.177
−−−
1.20
−−− 0.047
0.05
0.15 0.002 0.006
0.50
0.75 0.020 0.030
0.65 BSC
0.026 BSC
0.50
0.60 0.020 0.024
0.09
0.20 0.004 0.008
0.09
0.16 0.004 0.006
0.19
0.30 0.007 0.012
0.19
0.25 0.007 0.010
6.40 BSC
0.252 BSC
0_
8_
0_
8_
SOLDERING FOOTPRINT
7.06
1
0.65
PITCH
14X
0.36
14X
1.26
DIMENSIONS: MILLIMETERS
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