Renesas NP80N04NUG-S18-AYNote Switching n-channel power mos fet Datasheet

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP80N04NUG, NP80N04PUG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP80N04NUG and NP80N04PUG are N-channel MOS Field Effect Transistors designed for high current
switching applications.
ORDERING INFORMATION
PART NUMBER
NP80N04NUG-S18-AY
NP80N04PUG-E1B-AY
NP80N04PUG-E2B-AY
LEAD PLATING
PACKING
Tube
Note
Note
Pure Sn (Tin)
Note
50 p/tube
Tape
1000 p/reel
PACKAGE
TO-262 (MP-25SK) typ. 1.8 g
TO-263 (MP-25ZP) typ. 1.5 g
Note Pb-free (This product does not contain Pb in the external electrode.)
FEATURES
(TO-262)
• Non logic level
• Super low on-state resistance
- NP80N04NUG
RDS(on) = 4.8 mΩ MAX. (VGS = 10 V, ID = 40 A)
- NP80N04PUG
RDS(on) = 4.5 mΩ MAX. (VGS = 10 V, ID = 40 A)
• High current rating
(TO-263)
ID(DC) = ±80 A
• Low input capacitance
Ciss = 4900 pF TYP.
• Designed for automotive application and AEC-Q101 qualified
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D19799EJ1V0DS00 (1st edition)
Date Published May 2009 NS
Printed in Japan
2009
NP80N04NUG, NP80N04PUG
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
40
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±80
A
ID(pulse)
±300
A
Total Power Dissipation (TC = 25°C)
PT1
115
W
Total Power Dissipation (TA = 25°C)
PT2
1.8
W
Channel Temperature
Tch
175
°C
Drain Current (pulse)
Note1
Tstg
−55 to +175
°C
Repetitive Avalanche Current
Note2
IAR
37
A
Repetitive Avalanche Energy
Note2
EAR
137
mJ
Storage Temperature
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Tch ≤ 150°C, RG = 25 Ω
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Rth(ch-C)
1.30
°C/W
Channel to Ambient Thermal Resistance
Rth(ch-A)
83.3
°C/W
2
Data Sheet D19799EJ1V0DS
NP80N04NUG, NP80N04PUG
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
Zero Gate Voltage Drain Current
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
IDSS
VDS = 40 V, VGS = 0 V
1
μA
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±100
nA
Gate to Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 μA
2.0
| yfs |
VDS = 5 V, ID = 35 A
25
RDS(on)
VGS = 10 V,
NP80N04NUG
3.6
4.8
mΩ
ID = 40 A
NP80N04PUG
3.2
4.5
mΩ
Forward Transfer Admittance
Note
Drain to Source On-state Resistance
Note
4.0
V
50
S
Input Capacitance
Ciss
VDS = 25 V,
4900
7350
pF
Output Capacitance
Coss
VGS = 0 V,
480
720
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
310
560
pF
Turn-on Delay Time
td(on)
VDD = 20 V, ID = 40 A,
32
70
ns
Rise Time
tr
VGS = 10 V,
23
58
ns
Turn-off Delay Time
td(off)
RG = 0 Ω
65
130
ns
Fall Time
tf
11
28
ns
Total Gate Charge
QG
VDD = 32 V,
90
135
nC
Gate to Source Charge
QGS
VGS = 10 V,
21
nC
QGD
ID = 80 A
31
nC
Gate to Drain Charge
Body Diode Forward Voltage
Note
VF(S-D)
IF = 80 A, VGS = 0 V
Reverse Recovery Time
trr
IF = 80 A, VGS = 0 V,
40
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/μs
44
nC
0.92
1.5
V
Note Pulsed test
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
D.U.T.
L
50 Ω
PG.
VGS = 20 → 0 V
TEST CIRCUIT 2 SWITCHING TIME
RL
RG
PG.
VDD
VGS
VGS
Wave Form
0
VGS
10%
90%
VDD
VDS
90%
IAS
VDS
ID
VDS
0
10%
10%
tr
td(off)
Wave Form
τ
VDD
Starting Tch
90%
VDS
VGS
0
BVDSS
τ = 1 μs
Duty Cycle ≤ 1%
td(on)
ton
tf
toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG.
50 Ω
RL
VDD
Data Sheet D19799EJ1V0DS
3
NP80N04NUG, NP80N04PUG
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
125
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
120
100
80
60
40
20
100
0
75
50
25
0
0
25
50
75
100
125
150
175
0
TC - Case Temperature - °C
25
50
75
100
125
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
S(
R D GS
(V
100
ID(pulse)
d
it e
Lim V )
i0
1
=
PW
ID(DC)
=
1i 0
0
μs
i
1i m
DC
s
d
it e
Lim
1
wn
d
it e
im
nL
0.1
o
ed
ak
io
at
TC = 25°C
Single Pulse
0.1
i
ip
Br
iss
1
ms
ary
nd
D
er
10
1i 0
co
Se
w
Po
ID - Drain Current - A
1000
)
on
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t) - Transient Thermal Resistance - °C/W
1000
Rth(ch-A) = 83.3°C/W
100
10
Rth(ch-C) = 1.30°C/W
1
0.1
Single Pulse
0.01
1m
10 m
100 m
1
10
PW - Pulse Width - s
4
150
Data Sheet D19799EJ1V0DS
100
1000
175
NP80N04NUG, NP80N04PUG
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
400
400
VGS = 10 V
Pulsed
300
250
200
150
100
50
300
250
200
150
100
50
NP80N04NUG
0
NP80N04PUG
0
0
0.5
1
1.5
2
0
0.5
1
1.5
2
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
100
Tch = −55°C
−25°C
25°C
75°C
125°C
150°C
175°C
10
1
0.1
0.01
VDS = 10 V
Pulsed
0.001
0.0001
0
1
2
3
4
5
6
VGS(th) - Gate to Source Threshold Voltage - V
VDS - Drain to Source Voltage - V
1000
ID - Drain Current - A
VGS = 10 V
Pulsed
350
ID - Drain Current - A
ID - Drain Current - A
350
VGS - Gate to Source Voltage - V
5
4
3
2
1
VDS = VGS
ID = 250 μA
0
-75
-25
25
75
125
175
225
Tch - Channel Temperature - °C
| yfs | - Forward Transfer Admittance - S
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
Tch = −55°C
−25°C
25°C
75°C
125°C
10
150°C
175°C
VDS = 5 V
Pulsed
1
0.1
1
10
100
ID - Drain Current - A
Data Sheet D19799EJ1V0DS
5
NP80N04NUG, NP80N04PUG
VGS = 10 V
Pulsed
8
6
4
2
NP80N04NUG
0
1
10
100
1000
RDS(on) - Drain to Source On-state Resistance - mΩ
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
10
6
4
2
NP80N04PUG
0
1
10
100
1000
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
ID = 40 A
Pulsed
8
6
4
2
NP80N04NUG
0
0
4
8
12
16
20
RDS(on) - Drain to Source On-state Resistance - mΩ
ID - Drain Current - A
10
ID = 40 A
Pulsed
8
6
4
2
NP80N04PUG
0
0
4
8
12
16
20
VGS - Gate to Source Voltage - V
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
10
8
VGS = 10 V
ID = 40 A
Pulsed
6
4
2
NP80N04NUG
0
-75
-25
25
75
125
175
225
10
VGS = 10 V
ID = 40 A
Pulsed
8
6
4
2
NP80N04PUG
0
-75
-25
25
75
125
175
Tch - Channel Temperature - °C
Tch - Channel Temperature - °C
6
VGS = 10 V
Pulsed
8
RDS(on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
Data Sheet D19799EJ1V0DS
225
NP80N04NUG, NP80N04PUG
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
1000
10000
td(on), tr, td(off), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF
100000
Ciss
Coss
1000
Crss
VGS = 0 V
f = 1 MHz
100
0.01
td(off)
100
td(on)
tr
10
1
0.1
1
10
100
0.1
1
VDS - Drain to Source Voltage - V
1000
12
VDD = 32 V
20 V
8V
10
20
8
15
6
VGS
10
4
VDS
ID = 80 A
0
0
20
40
60
2
IF - Diode Forward Current - A
14
5
100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
VDS - Drain to Source Voltage - V
VDS - Drain to Source Voltage - V
35
25
10
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
30
tf
VDD = 20 V
VGS = 10 V
RG = 0 Ω
0
100
80
QG - Gate Charge - nC
100
10 V
VGS = 0 V
10
1
0.1
Pulsed
0.01
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VF(S-D) - Source to Drain Voltage - V
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
trr - Reverse Recovery Time - ns
100
di/dt = 100 A/μs
VGS = 0 V
10
0.1
1
10
100
IF - Diode Forward Current - A
Data Sheet D19799EJ1V0DS
7
NP80N04NUG, NP80N04PUG
PACKAGE DRAWINGS (Unit: mm)
7.88 MIN.
1.3 ±0.2
0.5
9.15 ±0.3
4
0.8±0.1
0.025
to 0.25
2.5±0.2
0.75 ±0.2
.2
0 to 8
˚
0.25
2.54
1. Gate
2. Drain
3. Source
4. Fin (Drain)
1 2
3
2.5
2.54 TYP.
1. Gate
2. Drain
3. Source
4. Fin (Drain)
2.54 ±0.25
0.6 ±0
0.5±0.2
2.54 TYP.
4.45 ±0.2
15.25 ±0.5
1.27±0.2
10.0 ±0.3
8.0 TYP.
3
No plating
3.1±0.3
2
13.7±0.3
1
8.9±0.2
4
4.45±0.2
1.3±0.2
10.1±0.3
10.0±0.2
1.35 ±0.3
TO-263 (MP-25ZP)
1.2±0.3
TO-262 (MP-25SK)
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
8
Data Sheet D19799EJ1V0DS
NP80N04NUG, NP80N04PUG
TAPE INFORMATION (NP80N04PUG)
There are two types (-E1B, -E2B) of taping depending on the direction of the device.
Draw-out side
Reel side
−E1B TYPE
−E2B TYPE
MARKING INFORMATION
NEC
80N04
UG
Pb-free plating marking
Abbreviation of part number
Lot code
RECOMMENDED SOLDERING CONDITIONS
These products should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, please contact an NEC Electronics
sales representative.
For technical information, see the following website.
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Soldering Method
Soldering Conditions
Infrared reflow
Maximum temperature (Package's surface temperature): 260°C or below
NP80N04PUG
Time at maximum temperature: 10 seconds or less
Recommended
Condition Symbol
IR60-00-3
Time of temperature higher than 220°C: 60 seconds or less
Preheating time at 160 to 180°C: 60 to 120 seconds
Maximum number of reflow processes: 3 times
Maximum chlorine content of rosin flux (percentage mass): 0.2% or less
Wave soldering
Maximum temperature (Solder temperature): 260°C or below
NP80N04NUG
Time: 10 seconds or less
THDWS
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Partial heating
Maximum temperature (Pin temperature): 350°C or below
NP80N04NUG,
Time (per side of the device): 3 seconds or less
NP80N04PUG
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
P350
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet D19799EJ1V0DS
9
NP80N04NUG, NP80N04PUG
• The information in this document is current as of May, 2009. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets,
etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or
types are available in every country. Please check with an NEC Electronics sales representative for
availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
• NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
• While NEC Electronics endeavors to enhance the quality and safety of NEC Electronics products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. In addition, NEC
Electronics products are not taken measures to prevent radioactive rays in the product design. When customers
use NEC Electronics products with their products, customers shall, on their own responsibility, incorporate
sufficient safety measures such as redundancy, fire-containment and anti-failure features to their products in
order to avoid risks of the damages to property (including public or social property) or injury (including death) to
persons, as the result of defects of NEC Electronics products.
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E0904E
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