Rohm DAN217UFH Switching diode Datasheet

Data Sheet
AEC-Q101 Qualified
Switching Diode
DAN217UFH
Applications
Ultra high speed switching
Land size figure (Unit : mm)
Dimensions (Unit : mm)
1.3
2.0±0.2
0.65
0.9MIN.
Features
1) Ultra small mold type. (UMD3)
2) High reliability.
2.1±0.1
1.25±0.1
(3)
0.8MIN
UMD3
(2)
Construction
Silicon epitaxial planar
0.1Min
0~0.1
(1)
(0.65)
1.6
0.3±0.1
各リードとも
Each lead has same dimension 0.15±0.05
同寸法
(0.65)
Structure
0.7±0.1
1.3±0.1
0.9±0.1
ROHM : UMD3
JEDEC : SOT-323
JEITA : SC-70
dot (year week factory)
Taping specifications (Unit : mm)
φ1.55±0.05
2.0±0.05
0.3±0.1
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
VRM
Reverse voltage (repetitive peak)
VR
Reverse voltage (DC)
IFM
Forward current (Single)
Average rectified forward current (Single)
Io
Isurge
Surge current (t=1us)
Power dissipation
Pd
Junction temperature
Tj
Storage temperature
Tstg
Electrical characteristics (Ta=25°C)
Parameter
Symbol
VF
Forward voltage
φ0.5±0.05
4.0±0.1
Limits
2.4±0.1
8.0±0.2
0~0.1
2.4±0.1
2.25±0.1
0
5.5±0.2
3.5±0.05
1.75±0.1
4.0±0.1
1.25±0.1
Unit
V
V
mA
mA
A
mW
°C
°C
80
80
300
100
4
200
150
55 to 150
Min.
Typ.
Max.
Unit
Conditions
IF=100mA
-
-
1.2
V
Reverse current
IR
-
-
0.2
μA
VR=70V
Capacitance between terminals
Reverse recovery time
Ct
-
-
3.5
pF
trr
-
-
4
ns
VR=6V , f=1MHz
VR=6V , IF=5mA , RL=50
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© 2011 ROHM Co., Ltd. All rights reserved.
1/2
2011.06 - Rev.B
Data Sheet
DAN217UFH
Ta=150℃
10000
Ta=125℃
10
Ta=25℃
Ta=150℃
Ta=-25℃
1
2.5
Ta=75℃
100
Ta=25℃
10
Ta=-25℃
1
0.1
100 200 300 400 500 600 700 800 900 1000
2.2
2.1
2
1.9
1.8
1.7
0
10
20 30 40 50 60 70
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
80
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
2.5
100
Ta=25℃
IF=100mA
n=30pcs
REVERSE CURRENT:IR(nA)
940
930
920
910
80
70
60
50
40
30
AVE:9.655nA
20
AVE:921.7m
900
2.3
2.2
2.1
2
1.9
1.8
1.7
10
1.6
0
1.5
VF DISPERSION MAP
IR DISPERSION MAP
10
5
AVE:3.50A
8
7
PEAK SURGE
FORWARD CURRENT:IFSM(A)
8.3ms
5
Ta=25℃
VR=6V
IF=5mA
RL=50Ω
n=10pcs
9
REVERSE RECOVERY TIME:trr(ns)
1cyc
Ifsm
15
6
5
4
3
2
1
0
Ifsm
4
8.3ms 8.3ms
1cyc
3
2
1
AVE:1.93ns
0
0
1
IFSM DISRESION MAP
trr DISPERSION MAP
t
10
1
0.1
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
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100
Rth(j-a)
100
Rth(j-c)
Mounted on epoxy board
10
IM=1mA
1ms
1
0.001
100
IF=10mA
time
300us
0.01
0.1
1
10
100
TIME:t(s)
Rth-t CHARACTERISTICS
2/2
9
ELECTROSTATIC
DDISCHARGE TEST ESD(KV)
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
Ifsm
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
10
1000
100
AVE:1.981pF
Ct DISPERSION MAP
10
20
Ta=25℃
VR=0V
f=1MHz
n=10pcs
2.4
Ta=25℃
VR=80V
n=10pcs
90
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
950
AVE:1.981pF
1.5
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
FORWARD VOLTAGE:VF(mV)
2.3
1.6
0.01
0
Ta=25℃
VR=0V
f=1MHz
n=10pcs
2.4
1000
0.1
PEAK SURGE
FORWARD CURRENT:IFSM(A)
Ta=125℃
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=75℃
REVERSE CURRENT:IR(nA)
FORWARD CURRENT:IF(mA)
100
8
7
6
5
4
3
2
1
0
1000
AVE:2.54kV
AVE:0.97kV
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
2011.06 - Rev.B
Datasheet
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© 2015 ROHM Co., Ltd. All rights reserved.
Rev.001
Datasheet
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Rev.001
Datasheet
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© 2015 ROHM Co., Ltd. All rights reserved.
Rev.001
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