BTA15 Discrete Triacs(Isolated) T2 G T1 BTA15-200 BTA15-400 BTA15-600 BTA15-800 BTA15-1000 BTA15-1200 VDRM/RRM VDSM/RSM V 200 400 600 800 1000 1200 V 300 500 700 900 1100 1300 A B S O L U T E M A X IM U M R A T IN G S Parame ter Symbol IT(RMS) ITSM I²t dI/dt PG(AV) Tstg Tj Unit RMS on-state current (full sine wave) TO-220AB Tc = 100°C 15 A Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) F = 60 Hz F = 50 Hz t = 16.7 ms t = 20 ms 160 168 A 144 A²s I²t Value for fusing Critical rate of rise of on-state current _ 100 ns IG = 2 x IGT , tr < tp = 10 ms VDSM /VRSM Non repetitive surge peak off-state voltage IGM Value Peak gate current F = 120 Hz Tj = 125°C 50 A/µs tp = 10 ms Tj = 25°C V DRM /VRRM + 100 V tp = 20 µs Tj = 125°C 4 A Tj = 125°C 1 W - 40 to + 150 - 40 to + 125 °C Average gate power dissipation Storage junction temperature range Operating junction temperature range ELECTRICAL CHARACTERISTICS (T j = 25° C, unl es s o the rw ise spec ified ) ■ S NUBBE RL ES and LOGIC LEVEL(3 Quadrants) Symbo l IGT VGT Test Conditions VD = 12 V RL = 33 Ω VGD VD = VDRM RL = 3.3 kΩ IH IT = 500 mA IL Quadran t Tj = 125°C BTA (dI/dt)c P1 BW 35 50 mA I - II - III MAX. I - II - III MAX. 1.3 V I - II - III MIN. 0.2 V IG = 1.2 IGT I - III MAX. 35 50 mA MAX. 50 70 mA 60 80 II dV/dt Unit CW VD = 67 % VDRM gate open Tj = 125°C MIN. 500 1000 V/µs Without snubber MIN. 8.5 14 A/ms Tj = 125°C ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected] www.sirectifier.com BTA15 Discrete Triacs(Isolated) ■ STANDARD (4 Quadrants) Symbol Test Conditions I GT VD = 12 V VGT VGD VD = VDRM IH IT = 500 mA IL IG = 1.2 IGT Quadrant RL = 33 Ω RL = 3.3 Ω Value Unit I - II - III IV MAX. 50 100 mA ALL MAX. 1.3 V ALL MIN. 0.2 V MAX. 50 mA MAX. 60 Tj = 125°C I - III - IV II dV/dt (dV/dt)c mA 120 VD = 67 % VDRM gate open Tj = 125°C MIN. 400 V/µs (dI/dt)c =7A/ms MIN. 10 V/µs Tj = 125°C STATIC CHARACTERISTICS Symbol Test Conditions VTM ITM = 15 A Vto tp = 380 µs Value Unit Tj = 25°C MAX. 1.5 5 V Threshold voltage Tj = 125°C MAX. 0.85 V Rd Dynamic resistance Tj = 125°C MAX. 60 mΩ IDRM VDRM = VRRM Tj = 25°C 5 µA 1 mA IRRM Tj = 125°C MAX. THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-c) Junction to case (AC) 1.2 °C/W Rth(j-a) Junction to ambient 60 °C/W PRODUCT SELECTOR Voltage (xxx) Part Number Sensitivity Type Package 50 mA Standard TO-220AB Weight Base quantity Packing mode 250 Bulk 200 V ~~ 100 V BTA15 X X OTHER INFORMATION Part Number BTA15 P2 Marking BTA15 2g ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected] www.sirectifier.com BTA15 Discrete Triacs(Isolated) F ig. 1: Maximum power dis s ipa tion vers us R MS on-s tate current (full cycle). 20 18 16 14 12 10 8 6 4 2 0 F ig. 2-1: R MS on-s tate current vers us cas e temperature (full cycle). P (W) IT (R MS ) (A ) IT (R MS ) (A ) 0 2 4 6 8 10 12 14 16 F ig. 3: R elative variation of thermal impeda nce versus pulse duration. 1E +0 18 16 14 12 10 8 6 4 2 0 B TB B TA T c (° C ) 0 25 F ig. 4: values ) 50 O n-s tate 200 chara cteris tics 125 (ma ximum T j max 100 Zth(j-c ) 1E -1 Zth(j-a) 10 T j=25° C tp (s ) 1E -2 100 IT M (A ) K =[Zth/R th] 1E -2 1E -3 75 1E -1 1E +0 T j max: V to = 0.85 V R d = 25 mΩ V T M (V ) 1E +1 1E +2 5E +2 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 F ig. 5: S urge peak on-s tate current versus number of cycles. 180 160 140 120 100 80 60 40 20 0 P3 IT S M (A ) t=20ms One cycle Non repetitive T j initial=25°C R epetitive T c=85°C Number of cycles 1 10 100 1000 ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected] www.sirectifier.com BTA15 Discrete Triacs(Isolated) F ig. 6: Non-repetitive s urge peak on-s tate current for a s inus oida l puls e with width tp < 10ms, a nd corres ponding value of I²t. F ig. 7: R elative va riation of gate trigger current, holding current and la tching current versus junction temperature (typical va lues ). IG T,IH,IL [T j] / IG T,IH,IL [T j=25° C ] IT S M (A ), I² t (A ² s ) 2.5 3000 T j initial=25°C 2.0 IG T dI/dt limitation: 50A /µs 1000 1.5 1.0 IT S M IH & IL 0.5 I²t tp (ms ) 100 0.01 0.10 1.00 T j(° C ) 10.00 F ig. 8: R elative variation of critical rate of decreas e of main current vers us (dV /dt)c (typica l values ). C 1.6 1.4 20 40 60 80 100 120 140 F ig. 9: R elative variation of critical rate of decreas e of main current vers us junction temperature. 5 4 B B W/C W/T 1635 1.0 3 2 0.8 0.6 P4 0 6 SW 1.2 0.4 0.1 -20 (dI/dt)c [T j] / (dI/dt)c [T j s pec ified] (dI/dt)c [(dV /dt)c ] / S pec ified (dI/dt)c 2.0 1.8 0.0 -40 1 (dV /dt)c (V /µs ) 1.0 10.0 100.0 0 T j (° C ) 0 25 50 75 ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected] 100 125 www.sirectifier.com