ON MBRJ20L60CTG Power rectifier Datasheet

MBRJ20L60CTG
Product Preview
SWITCHMODE
Power Rectifier
60 V, 20 A
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Features and Benefits
•
•
•
•
•
SCHOTTKY BARRIER
RECTIFIER
20 AMPERES
60 VOLTS
Low Power Loss/High Efficiency
High Surge Capacity
20 A Total (10 A Per Diode Leg)
Guard−Ring for Stress Protection
This is a Pb−Free Device
1
Applications
2, 4
• Power Supply − Output Rectification
• Power Management
• Instrumentation
3
MARKING
DIAGRAM
Mechanical Characteristics:
•
•
•
•
•
•
Case: Epoxy, Molded
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 1.9 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Shipped 50 Units Per Plastic Tube
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
TO−220 FULLPAK]
CASE 221AH
CT SUFFIX
1
2
AYWW
B20L60G
AKA
3
A
Y
WW
B20L60
G
AKA
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
= Polarity Designator
ORDERING INFORMATION
Device
Package
Shipping
MBRJ20L60CTG
TO−220AH
(Pb−Free)
50 Units / Rail
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2012
November, 2012 − Rev. P0
1
Publication Order Number:
MBRJ20L60CT/D
MBRJ20L60CTG
MAXIMUM RATINGS (Per Diode Leg)
Rating
Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Value
VRRM
VRWM
VR
Average Rectified Forward Current
(Rated VR) TC = 138°C
(Rated VR) TC = 123°C
Per Diode
Per Device
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
60
IF(AV)
Unit
V
A
10
20
IFSM
240
A
Operating Junction Temperature (Note 1)
TJ
−55 to +150
°C
Storage Temperature
Tstg
−65 to +175
°C
> 400
> 8000
V
ESD Ratings:
Machine Model = C
Human Body Model = 3B
THERMAL CHARACTERISTICS
Maximum Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
°C/W
3.9
105
RqJC
RqJA
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Rating
Symbol
Maximum Instantaneous Forward Voltage (Note 2)
(IF = 10 A, TC = 25°C)
(IF = 10 A, TC = 125°C)
(IF = 20 A, TC = 25°C)
(IF = 20 A, TC = 125°C)
vF
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TC = 25°C)
(Rated DC Voltage, TC = 125°C)
iR
Typ
Max
0.53
0.49
0.68
0.64
0.57
0.54
0.73
0.69
118
52
380
96
Unit
V
mA
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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2
MBRJ20L60CTG
10
IF, AVERAGE FORWARD CURRENT
(A)
100
125°C
150°C
85°C
1
TJ = 25°C
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
85°C
1
TJ = 25°C
1
1.2
1.4
1.6
1.8
1.0E+00
150°C
150°C
1.0E−01
125°C
125°C
1.0E−02
85°C
1.0E−03
1.0E−04
1.0E−04
TJ = 25°C
1.0E−05
TJ = 25°C
1.0E−05
0
10
20
30
40
VR, REVERSE VOLTAGE (V)
50
60
1.0E−06
0
Figure 3. Typical Reverse Current
10
20
30
40
50
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
6
IF, AVERAGE FORWARD CURRENT
(A)
RqJC = 5.2°C/W
dc
14
12
SQUARE WAVE
8
6
4
2
90
100 110
120 130 140
TC, CASE TEMPERATURE (°C)
150
60
Figure 4. Maximum Reverse Current
20
IF, AVERAGE FORWARD CURRENT
(A)
0.8
Figure 2. Maximum Forward Voltage
1.0E−03
0
80
0.6
Figure 1. Typical Forward Voltage
85°C
10
0.4
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
1.0E−02
16
0.2
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
1.0E−01
18
125°C
150°C
0.1
0
1.8
1.0E+00
1.0E−06
10
IR, INSTANTANEOUS REVERSE CURRENT (A)
IR, INSTANTANEOUS REVERSE CURRENT (A)
IF, AVERAGE FORWARD CURRENT
(A)
100
160
RqJA = 75°C/W
5
4
dc
3
2
SQUARE WAVE
1
0
0
Figure 5. Current Derating, Case per Leg
20
40
60
80
100 120 140
TA, AMBIENT TEMPERATURE (°C)
Figure 6. Current Derating, Ambient per Leg
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3
160
MBRJ20L60CTG
10000
PFO, AVERAGE POWER DISSIPATION (W)
18
TJ = 150°C
16
TJ = 25°C
C, CAPACITANCE (pF)
14
SQUARE WAVE
12
10
8
dc
6
4
1000
100
2
0
0
2
4
6
8
10
12
14
16
18
10
20
0
10
20
30
40
50
IO, AVERAGE FORWARD CURRENT (A)
VR, REVERSE VOLTAGE (V)
Figure 7. Forward Power Dissipation
Figure 8. Capacitance
60
R(t), TYPICAL TRANSIENT THERMAL
RESISTANCE (°C/W)
10
D = 0.5
0.2
0.1
0.05
0.02
0.1
0.01
1
0.01
SINGLE PULSE
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
t, PULSE TIME (sec)
Figure 9. Typical Transient Thermal Response, Junction−to−Case
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4
100
1000
MBRJ20L60CTG
PACKAGE DIMENSIONS
TO−220 FULLPACK, 3−LEAD
CASE 221AH
ISSUE C
A
E
B
P
E/2
0.14
Q
D
M
B A
M
A
H1
A1
C
NOTE 3
1 2 3
L
b2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR UNCONTROLLED IN THIS AREA.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH
AND GATE PROTRUSIONS. MOLD FLASH AND GATE
PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE TO BE MEASURED AT OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. DIMENSION b2 DOES NOT INCLUDE DAMBAR
PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION
SHALL NOT EXCEED 2.00.
L1
3X
3X
SEATING
PLANE
c
b
0.25
M
B A
M
C
A2
e
DIM
A
A1
A2
b
b2
c
D
E
e
H1
L
L1
P
Q
MILLIMETERS
MIN
MAX
4.30
4.70
2.50
2.90
2.50
2.70
0.54
0.84
1.10
1.40
0.49
0.79
14.70
15.30
9.70
10.30
2.54 BSC
6.70
7.10
12.70
14.73
--2.80
3.00
3.40
2.80
3.20
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MBRJ20L60CT/D