MBRS320P, MBRS330P, MBRS340P Surface Mount Schottky Power Rectifier These devices employ the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. Features • • • • • • • • Small Compact Surface Mountable Package with J-Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop (0.5 V Max @ 3.0 A, TJ = 25°C) Excellent Ability to Withstand Reverse Avalanche Energy Transients Guard-Ring for Stress Protection Device Passes ISO 7637 Pulse #1 These are Pb-Free Packages www.onsemi.com SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS SMC CASE 403AC MARKING DIAGRAM AYWW B3xG G Mechanical Characteristics • Case: Epoxy, Molded, Epoxy Meets UL 94 V−0 • Weight: 217 mg (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • • • • Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Cathode Polarity Band Device Meets MSL 1 Requirements ESD Ratings: ♦ Machine Model = C (> 400 V) ♦ Human Body Model = 3B (> 8000 V) B3x x A Y WW G = Device Code = 2, 3 or 4 = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping† MBRS320PT3G SMC (Pb−Free) 2,500 / Tape & Reel MBRS330PT3G SMC (Pb−Free) 2,500 / Tape & Reel MBRS340PT3G SMC (Pb−Free) 2,500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2015 August, 2015 − Rev. 0 1 Publication Order Number: MBRS320P/D MBRS320P, MBRS330P, MBRS340P MAXIMUM RATINGS Symbol MBRS320PT3G MBRS330PT3G MBRS340PT3G Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 20 30 40 V Average Rectified Forward Current IF(AV) Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 3.0 @ TL = 110°C 4.0 @ TL = 105°C A A 80 Operating Junction Temperature TJ °C − 65 to +150 ISO 7637 Pulse #1 (100 V, 10W) Pulses 5000 ESD Ratings: Machine Model = C Human Body Model = 3B V > 400 > 8000 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Lead °C/W 11 RqJL ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 1) (iF = 3.0 A, TJ = 25°C) VF Maximum Instantaneous Reverse Current (Note 1) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 100°C) iR V 0.50 mA 2.0 20 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. TYPICAL ELECTRICAL CHARACTERISTICS 10 iF, INSTANTANEOUS FORWARD CURRENT (AMPS) iF, INSTANTANEOUS FORWARD CURRENT (AMPS) 10 TJ = 100°C TJ = 125°C 1 TJ = 25°C TJ = −40°C TJ = −65°C 0.1 TJ = 100°C TJ = 125°C 1 TJ = 25°C TJ = −40°C TJ = −65°C 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage www.onsemi.com 2 MBRS320P, MBRS330P, MBRS340P 1.E−01 IR, REVERSE CURRENT (AMPS) 1.E−01 TJ = 125°C 1.E−02 1.E−02 TJ = 125°C 1.E−03 1.E−03 TJ = 100°C TJ = 100°C 1.E−04 1.E−04 1.E−05 1.E−06 IR, MAXIMUM REVERSE CURRENT (AMPS) TYPICAL ELECTRICAL CHARACTERISTICS (continued) TJ = 25°C 0 5 TJ = 25°C 1.E−05 10 15 20 25 30 35 40 1.E−06 5 0 10 VR, REVERSE VOLTAGE (V) PFO, AVERAGE POWER DISSIPATION (W) Freq = 20 kHz RqJL = 11°C/W dc 4 3.5 3 SQUARE WAVE 2.5 2 1.5 1 0.5 0 90 100 110 130 120 140 150 1.8 1.6 IPK/IO = p 1.4 35 30 40 SQUARE WAVE dc IPK/IO = 5 1.2 1 0.8 0.6 0.4 0.2 0 0 1 0.5 2 1.5 2.5 3 3.5 4 4.5 IO, AVERAGE FORWARD CURRENT (A) Figure 5. Current Derating Figure 6. Forward Power Dissipation 700 TYPICAL CAPACITANCE AT 0 V = 658 pF TJ = 25°C 600 500 400 300 200 100 0 4 25 2 TL, LEAD TEMPERATURE (°C) 0 20 Figure 4. Maximum Reverse Current 5 C, CAPACITANCE (pF) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 3. Typical Reverse Current 4.5 15 VR, REVERSE VOLTAGE (V) 8 12 16 20 24 28 32 VR, REVERSE VOLTAGE (V) Figure 7. Typical Capacitance www.onsemi.com 3 36 40 5 MBRS320P, MBRS330P, MBRS340P PACKAGE DIMENSIONS SMC 2−LEAD CASE 403AC ISSUE O NOTES: 1. DIMENSIONING AND TOLERANCING PER ANME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. 4. DIMENSIONS D AND E1 TO BE DETERMINED AT DATUM H. 5. DIMENSION b SHALL BE MEASURED WITHIN THE AREA DE TERMINED BY DIMENSION L. E E1 D A1 DIM A A1 b c D E E1 L c DETAIL A TOP VIEW DETAIL A MILLIMETERS MIN MAX 1.95 2.65 0.05 0.20 2.90 3.20 0.15 0.41 5.55 6.25 7.75 8.15 6.60 7.15 0.75 1.60 A b L SIDE VIEW END VIEW RECOMMENDED SOLDERING FOOTPRINT* 8.75 2X 3.79 2X 2.25 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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