MMBTA42L, SMMBTA42L, MMBTA43L High Voltage Transistors NPN Silicon www.onsemi.com Features • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 1 BASE 2 EMITTER MAXIMUM RATINGS Characteristic Symbol Collector −Emitter Voltage MMBTA42, SMMBTA42 MMBTA43 VCEO Collector −Base Voltage MMBTA42, SMMBTA42 MMBTA43 VCBO Emitter −Base Voltage MMBTA42, SMMBTA42 MMBTA43 VEBO Collector Current − Continuous Value Unit 3 Vdc 300 200 1 2 Vdc 300 200 SOT−23 (TO−236) CASE 318 STYLE 6 Vdc 6.0 6.0 IC 500 mAdc Symbol Max Unit 225 1.8 mW mW/°C 556 °C/W 300 2.4 mW mW/°C RqJA 417 °C/W TJ, Tstg −55 to +150 °C MARKING DIAGRAMS THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature PD RqJA PD Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. © Semiconductor Components Industries, LLC, 1994 October, 2016 − Rev. 13 1 1D M G G 1 M1E M G G 1 1D = MMBTA42LT, SMMBTA42L M1E = MMBTA43LT M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Publication Order Number: MMBTA42LT1/D MMBTA42L, SMMBTA42L, MMBTA43L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Max Unit 300 200 − − 300 200 − − 6.0 − − − 0.1 0.1 − − 0.1 0.1 25 40 − − 40 40 − − − − 0.5 0.5 VBE(sat) − 0.9 Vdc fT 50 − MHz − − 3.0 4.0 OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 3) (IC = 1.0 mAdc, IB = 0) Collector −Base Breakdown Voltage (IC = 100 mAdc, IE = 0) MMBTA42, SMMBTA42 MMBTA43 MMBTA42, SMMBTA42 MMBTA43 Emitter −Base Breakdown Voltage (IE = 100 mAdc, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO Collector Cutoff Current (VCB = 200 Vdc, IE = 0) (VCB = 160 Vdc, IE = 0) MMBTA42, SMMBTA42 MMBTA43 Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) (VEB = 4.0 Vdc, IC = 0) MMBTA42, SMMBTA42 MMBTA43 ICBO IEBO Vdc Vdc Vdc mAdc mAdc ON CHARACTERISTICS (Note 3) DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) Both Types Both Types (IC = 30 mAdc, VCE = 10 Vdc) MMBTA42, SMMBTA42 MMBTA43 Collector −Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) MMBTA42, SMMBTA42 MMBTA43 Base−Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) hFE VCE(sat) − Vdc SMALL− SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Collector−Base Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) MMBTA42, SMMBTA42 MMBTA43 Ccb pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. www.onsemi.com 2 MMBTA42L, SMMBTA42L, MMBTA43L TYPICAL CHARACTERISTICS 1000 1.2 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN VCE = 10 V TJ = 150°C 25°C 100 −55°C 10 0.1 1 10 100 −55°C 1 10 100 Figure 2. Collector−Emitter Saturation Voltage vs. Collector Current −55°C 25°C 150°C 0.3 0.2 0.1 IC/IB = 10 0 0.1 1 10 100 1.0 0.9 0.8 −55°C 0.7 0.6 25°C 0.5 0.4 150°C 0.3 0.2 0.1 IC/IB = 10 0 0.1 10 1 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 3. Base−Emitter Saturation Voltage vs. Collector Current Figure 4. Base−Emitter On Voltage vs. Collector Current 0 −0.4 100 VCE = 10 V −0.8 −1.2 −1.6 −2.0 qVB, for VBE 10 Cobo 1 −55°C to 150°C −2.4 −2.8 0.1 TJ = 25°C f = 1 MHz Cibo C, CAPACITANCE (pF) qVB, TEMPERATURE COEFFICIENT (mV/°C) 0.2 Figure 1. DC Current Gain 0.5 0.4 25°C 0.4 IC, COLLECTOR CURRENT (mA) VBE(on), BASE−EMITTER VOLTAGE (V) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 0.6 0.6 IC, COLLECTOR CURRENT (mA) 0.9 0.7 150°C 0.8 0.0 0.1 1.0 0.8 IC/IB = 10 1.0 1 100 10 0.1 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 5. Base−Emitter Temperature Coefficient Figure 6. Capacitance www.onsemi.com 3 1000 MMBTA42L, SMMBTA42L, MMBTA43L 100 1 VCE = 20 V TJ = 25°C 10 1 IC, COLLECTOR CURRENT (A) fTau, CURRENT−GAIN BANDWIDTH (MHz) TYPICAL CHARACTERISTICS 1.0 s 0.01 0.001 100 10 10 ms 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 7. Current−Gain — Bandwidth Product Figure 8. Safe Operating Area 1000 ORDERING INFORMATION Package Type Shipping† MMBTA42LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel SMMBTA42LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel MMBTA42LT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel SMMBTA42LT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel MMBTA43LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel Device Order Number †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 4 MMBTA42L, SMMBTA42L, MMBTA43L PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0_ MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 _ MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0_ INCHES NOM MAX 0.039 0.044 0.002 0.004 0.017 0.020 0.006 0.008 0.114 0.120 0.051 0.055 0.075 0.080 0.017 0.022 0.021 0.027 0.094 0.104 −−− 10 _ STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR END VIEW RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 3X 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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