Diodes DMN62D1SFB Low gate threshold voltage Datasheet

DMN62D1SFB
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
ADVANCE INFORMATION
60V
Features and Benefits
2
RDS(on) Max
ID Max
@ TA = +25°C

Footprint of just 0.6mm – thirteen times smaller than SOT23

Low On-Resistance
1.4 @ VGS= 10V
0.41A

Low Gate Threshold Voltage
0.38A

Fast Switching Speed

Ultra-Small Surface Mount Package
1.6 @ VGS= 4.5V
Description
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it

ESD Protected Gate 200V

Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability
ideal for high efficiency power management applications.
Mechanical Data
Applications


Load Switch


Portable Applications

Power Management Functions
Case: X1-DFN1006-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0


Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208 e4

Weight: 0.001 grams (approximate)
Drain
X1-DFN1006-3
S
Body
Diode
Gate
D
G
Bottom View
Top View
Internal Schematic
Gate
Protection
Diode
Source
Equivalent Circuit
Ordering Information (Note 4)
Product
DMN62D1SFB-7B
Notes:
Marking
NH
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
DMN62D1SFB-7B
NH
NH = Product Type Marking Code
Top View
Bar Denotes Gate
and Source Side
DMN62D1SFB
Document number: DS35252 Rev. 3 - 2
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DMN62D1SFB
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Value
Unit
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±20
V
ID
0.41
0.30
A
IDM
2.64
A
Symbol
Value
Unit
PD
0.47
W
RθJA
258
°C/W
TJ, TSTG
-55 to +150
°C
Continuous Drain Current (Note 5)
ADVANCE INFORMATION
Symbol
VGS = 10V
TA = +25°C
TA = +85°C
Pulsed Drain Current (Note 6)
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
@TA =+25°C
Operating and Storage Temperature Range
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
60
—
—
V
VGS = 0V, ID = 250μA
Zero Gate Voltage Drain Current TJ = +25°C
IDSS
—
—
100
nA
VDS = 60V, VGS = 0V
Gate-Source Leakage
IGSS
—
—
10
1
μA
VGS = ±20V, VDS = 0V
VGS = ±5V, VDS = 0V
VGS(th)
1.3
1.6
2.3
V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
1.40
RDS(ON)
—
—
Forward Transfer Admittance
|Yfs|
100
—
—
mS
VDS = 5V, ID = 40mA
Diode Forward Voltage
VSD
—
0.7
1.1
V
VGS = 0V, IS = 300mA
Input Capacitance
Ciss
—
40
80
pF
Output Capacitance
Coss
—
3.5
7
pF
Reverse Transfer Capacitance
Crss
—
2.8
5.6
pF
Gate Resistance
Rg
—
81.3
200
Ω
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge
Qg
—
0.73
1.5
nC
VGS = 4.5V
Total Gate Charge
Qg
—
1.39
2.8
nC
Qgs
—
0.2
0.4
nC
Gate-Drain Charge
Qgd
—
0.23
0.5
nC
Turn-On Delay Time
tD(on)
—
3.89
10
ns
Turn-On Rise Time
tr
—
4.93
10
ns
Turn-Off Delay Time
tD(off)
—
18.80
40
ns
tf
—
11.96
25
ns
1.60
Ω
VDS = VGS, ID = 250μA
VGS = 10V, ID = 40mA
VGS = 4.5V, ID = 35mA
DYNAMIC CHARACTERISTICS (Note 8)
Gate-Source Charge
Turn-Off Fall Time
Notes:
VDS = 40V, VGS = 0V,
f = 1.0MHz
VGS = 10V
VDS = 50V, ID = 1A
VDS = 50V, ID = 1A
VGS = 10V, RG = 6Ω
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on minimum recommended pad layout test board, 10µs pulse duty cycle = 1%.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMN62D1SFB
Document number: DS35252 Rev. 3 - 2
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VGS = 10V
VGS = 5.0V
VGS = 4.0V
VGS = 3.0V
ID, DRAIN CURRENT (A)
0.6
0.4
VGS = 2.5V
0.2
VGS = 2.0V
0
1
2
3
4
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
5
10
VGS = 10V
TA = 125°C
TA = 150°C
TA = 85°C
1
TA = 25°C
TA = -55°C
0.1
0
0.2
0.4
0.6
0.8
ID, DRAIN CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Temperature
1.8
1.6
ID = 1mA
1.4
1.2
1.0
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 Gate Threshold Variation vs. Ambient Temperature
DMN62D1SFB
Document number: DS35252 Rev. 3 - 2
VGS = 5V
TA = 125°C
TA = 150°C
TA = 85°C
1
TA = 25°C
TA = -55°C
0.1
0
0.2
3.0
2.5
2.0
VGS = 10V
ID = 300mA
1.5
VGS = 10V
ID = 150mA
1.0
0.5
0
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 4 On-Resistance Variation with Temperature
1.0
2.0
10
0.4
0.6
0.8
1.0
ID, DRAIN CURRENT (A)
Fig. 2 Typical On-Resistance vs. Drain Current and Temperature
RDSON, DRAIN-SOURCE ON-RESISTANCE ()
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0
VGS(TH), GATE THRESHOLD VOLTAGE (V)
ADVANCE INFORMATION
0.8
|YFS|, FORWARD TRANSFER ADMITTANCE (S)
1.0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
DMN62D1SFB
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1
VDS = 10V
TA = -55°C
0.1
TA = 25°C
TA = 85°C
T A = 125°C
TA = 150°C
0.01
0
0.001
0.01
0.1
1
ID, DRAIN CURRENT (mA)
Fig. 6 Forward Transfer Admittance vs. Drain Current
April 2014
© Diodes Incorporated
DMN62D1SFB
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
IS, SOURCE CURRENT (A)
0.1
TA = 150°C
T A = 125°C
0.01
T A = 85°C
TA = 25°C
TA = -55°C
0.001
0.1
0.3
0.5
0.7
0.9
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 7 Diode Forward Voltage vs. Current
1.1
7
6
5
4
3
2
ID = 300mA
1
0
ID = 150mA
0
4
8
12
16
20
ID, DRAIN-SOURCE CURRENT
Fig. 8 On-Resistance vs. Drain-Source Current
1,000
1
f = 1MHz
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (A)
VDS = 10V
0.1
T A = 150°C
0.01
TA = 125°C
100
Ciss
10
Coss
TA = 85°C
T A = 25°C
Crss
T A = -55°C
0.001
0
1
2
3
4
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 9 Typical Transfer Characteristic
5
1
0
4
8 12 16 20 24 28 32 36 40
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Total Capacitance
10
VGS, GATE-SOURCE VOLTAGE (V)
ADVANCE INFORMATION
1
8
VDS = 50V
ID = 1.0A
6
4
2
0
0
0.2
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Qg, TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
DMN62D1SFB
Document number: DS35252 Rev. 3 - 2
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DMN62D1SFB
r(t), TRANSIENT THERMAL RESISTANCE
ADVANCE INFORMATION
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
RJA(t) = r(t) * RJA
RJA = 249°C/W
D = 0.02
0.01
D = 0.01
P(pk)
D = 0.005
t1
t2
TJ - TA = P * RJA(t)
Duty Cycle, D = t1/t2
D = Single Pulse
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (s)
Fig. 12 Transient Thermal Response
10
100
1,000
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
A1
D
b1
E
e
b2
L2
L3
X1-DFN1006-3
Dim Min
Max Typ
A
0.47
0.53 0.50
A1
0
0.05 0.03
b1
0.10
0.20 0.15
b2
0.45
0.55 0.50
D
0.95 1.075 1.00
E
0.55 0.675 0.60
e
0.35


L1
0.20
0.30 0.25
L2
0.20
0.30 0.25
L3
0.40


All Dimensions in mm
L1
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version.
C
Dimensions
Z
G1
G2
X
X1
Y
C
X1
X
G2
G1
Y
Value (in mm)
1.1
0.3
0.2
0.7
0.25
0.4
0.7
Z
DMN62D1SFB
Document number: DS35252 Rev. 3 - 2
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DMN62D1SFB
IMPORTANT NOTICE
ADVANCE INFORMATION
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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final and determinative format released by Diodes Incorporated.
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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Copyright © 2014, Diodes Incorporated
www.diodes.com
DMN62D1SFB
Document number: DS35252 Rev. 3 - 2
6 of 6
www.diodes.com
April 2014
© Diodes Incorporated