XPTTM 650V IGBT GenX3TM w/ Diode IXYN120N65B3D1 Extreme Light Punch through IGBT for 10-30kHz Switching VCES = IC110 = VCE(sat) tfi(typ) = E SOT-227B, miniBLOC E153432 Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Maximum Ratings 650 650 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 ILRMS IC110 IF110 ICM TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 110°C TC = 25°C, 1ms 250 200 120 86 770 A A A A A IA EAS TC = 25°C TC = 25°C 60 1 A J SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 2 Clamped Inductive Load ICM = 240 VCE VCES A tsc (SCSOA) VGE = 15V, VCE = 400V, TJ = 150°C RG = 82, Non Repetitive 8 μs PC TC = 25°C 830 W -55 ... +175 175 -55 ... +175 °C °C °C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in Nm/lb.in 30 g TJ TJM Tstg TVISOL 50/60Hz IISOL 1mA Md Mounting Torque Terminal Connection Torque 650V 120A 1.90V 107ns t = 1min t = 1s Weight E G E C G = Gate, C = Collector, E = Emitter either emitter terminal can be used as Main or Kelvin Emitter Features Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 650 VGE(th) IC = 250A, VCE = VGE 3.5 ICES VCE = VCES, VGE = 0V IGES VCE = 0V, VGE = 20V 100 VCE(sat) IC 1.55 1.77 = 100A, VGE = 15V, Note 1 TJ = 150C © 2016 IXYS CORPORATION, All Rights Reserved V 25 A 1.5 mA TJ = 150C 1.90 High Power Density Low Gate Drive Requirement Applications V 6.0 International Standard Package miniBLOC, with Aluminium Nitride Isolation 2500V~ Isolation Voltage Optimized for 10-30kHz Switching Square RBSOA Avalanche Rated Short Circuit Capability High Current Handling Capability Anti-Parallel Fast Diode nA V V Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100663A(01/16) IXYN120N65B3D1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 35 IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 120A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 50A, VGE = 15V VCE = 400V, RG = 2 Note 2 Inductive load, TJ = 150°C IC = 50A, VGE = 15V VCE = 400V, RG = 2 Note 2 RthJC RthCS SOT-227B miniBLOC (IXYN) 58 S 6900 586 146 pF pF pF 250 52 110 nC nC nC 30 28 1.34 168 107 1.50 ns ns mJ ns ns mJ 30 30 2.60 226 196 2.20 ns ns mJ ns ns mJ 0.05 0.18 °C/W °C/W Reverse Diode (FRED) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) VF IF = 100A, VGE = 0V, Note 1 Irr trr IF = 100A, VGE = 0V, -diF/dt = 700A/μs, VR = 400V Characteristic Values Min. Typ. Max. TJ = 150°C 1.7 2.70 V V TJ = 150°C TJ = 150°C 45 156 A ns RthJC Notes: 0.38 °C/W 1. Pulse test, t 300μs, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYN120N65B3D1 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 240 350 VGE = 15V VGE = 15V 13V 12V 200 11V 11V 250 160 10V I C - Amperes I C - Amperes 12V 300 120 9V 80 200 10V 150 9V 100 40 8V 50 7V 0 8V 7V 0 0 0.5 1 1.5 2 2.5 3 3.5 0 2 4 6 240 2.0 VGE = 15V 13V 12V 11V 12 14 VGE = 15V VCE(sat) - Normalized 1.8 10V 160 I C - Amperes 10 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ TJ = 150ºC 200 8 VCE - Volts VCE - Volts 120 9V 80 I C = 240A 1.6 1.4 1.2 I C = 120A 1.0 8V 40 0.8 I C = 60A 7V 0.6 0 0 0.5 1 1.5 2 2.5 3 3.5 -50 4 -25 0 VCE - Volts 125 150 175 180 5.0 160 4.5 140 4.0 I C = 240A 3.0 120 TJ = 150ºC 25ºC 100 - 40ºC 80 60 120A 2.0 100 Fig. 6. Input Admittance TJ = 25ºC 2.5 75 200 I C - Amperes VCE - Volts 5.5 3.5 50 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 6.0 25 40 60A 1.5 20 1.0 0 8 9 10 11 12 VGE - Volts © 2016 IXYS CORPORATION, All Rights Reserved 13 14 15 4 5 6 7 VGE - Volts 8 9 10 IXYN120N65B3D1 Fig. 7. Transconductance Fig. 8. Gate Charge 120 16 TJ = - 40ºC 100 VCE = 325V 12 I G = 10mA I C = 120A 25ºC 80 150ºC V GE - Volts g f s - Siemens 14 60 40 10 8 6 4 20 2 0 0 0 20 40 60 80 100 120 140 160 180 200 220 0 50 I C - Amperes Fig. 9. Capacitance 150 200 250 Fig. 10. Reverse-Bias Safe Operating Area 280 10,000 240 Cies 200 1,000 I C - Amperes Capacitance - PicoFarads 100 QG - NanoCoulombs Coes 160 120 80 TJ = 150ºC RG = 2Ω dv / dt < 10V / ns 40 Cres f = 1 MHz 0 100 0 5 10 15 20 25 30 35 100 40 VCE - Volts 200 300 400 500 600 700 VCE - Volts 1 Fig. 12. Maximum Trasient Thermal Impedance (IGBT) Fig. 11. Forward-Bias Safe Operating Area aaa 0.3 1000 VCE(sat) Limit 100 0.1 25µs 10 1ms 1 Z (th)JC - K / W I D - Amperes 100µs 0.01 TJ = 175ºC 0.1 10ms TC = 25ºC Single Pulse 0.01 1 10 100 1000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.001 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXYN120N65B3D1 Fig. 13. Inductive Switching Energy Loss vs. Gate Resistance Eoff 5.0 10 --- Eoff 4.5 TJ = 150ºC , VGE = 15V 5 VCE = 400V 8 I C = 100A 3 4 I C = 50A 2 5 TJ = 150ºC 3.0 2.5 3 2.0 2 TJ = 25ºC 8 10 12 1 1.0 0 6 4 2 1 4 6 3.5 1.5 2 50 14 55 60 65 70 RG - Ohms Eoff 4.5 Eon ---- 8 tfi 7 90 95 0 100 5 3.0 4 2.5 I C = 50A 3 td(off) - - - 500 VCE = 400V 190 400 I C = 50A 170 300 2 I C = 100A 150 1.5 600 t d(off) - Nanoseconds 3.5 6 t f i - Nanoseconds I C = 100A Eon - MilliJoules Eoff - MilliJoules 85 TJ = 150ºC, VGE = 15V 210 VCE = 400V 2.0 200 1 1.0 25 50 75 100 130 0 150 125 100 2 4 6 8 Fig. 17. Inductive Turn-off Switching Times vs. Collector Current 220 tfi 200 td(off) - - - - VCE = 400V tfi 260 190 180 100 160 TJ = 25ºC 80 140 60 55 60 65 70 75 80 85 I C - Amperes © 2016 IXYS CORPORATION, All Rights Reserved 90 95 120 100 t f i - Nanoseconds 120 220 170 200 I C = 50A 150 180 I C = 100A 130 160 110 140 90 25 50 75 100 TJ - Degrees Centigrade 125 120 150 t d(off) - Nanoseconds 200 240 VCE = 400V t d(off) - Nanoseconds 220 140 50 14 td(off) - - - - RG = 2Ω , VGE = 15V 240 TJ = 150ºC 160 12 Fig. 18. Inductive Turn-off Switching Times vs. Junction Temperature 210 280 RG = 2Ω , VGE = 15V 180 10 RG - Ohms TJ - Degrees Centigrade t f i - Nanoseconds 80 Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance 230 RG = 2Ω , VGE = 15V 4.0 75 I C - Amperes Fig. 15. Inductive Switching Energy Loss vs. Junction Temperature 5.0 7 E on - MilliJoules 6 ---- VCE = 400V 4.0 4 Eon 8 RG = 2Ω , VGE = 15V E on - MilliJoules Eoff - MilliJoules Eon - E off - MilliJoules 6 Fig. 14. Inductive Switching Energy Loss vs. Collector Current IXYN120N65B3D1 Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance 180 tri 160 td(on) - - - - 100 100 90 90 TJ = 150ºC, VGE = 15V 80 70 100 60 I C = 100A 80 50 60 40 I C = 50A 40 0 2 4 6 80 30 20 8 10 12 tri VCE = 400V 40 38 32 40 30 I C = 50A 28 0 100 31 40 30 29 50 60 75 50 20 34 50 32 TJ = 25ºC 10 14 80 25 33 60 30 36 I C = 100A 20 70 20 t d(on) - Nanoseconds t r i - Nanoseconds td(on) - - - - RG = 2Ω , VGE = 15V 100 34 VCE = 400V 55 60 65 70 75 80 I C - Amperes Fig. 21. Inductive Turn-on Switching Times vs. Junction Temperature 120 35 TJ = 150ºC RG - Ohms 140 td(on) - - - - 125 26 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 85 90 95 28 100 t d(on) - Nanoseconds 120 t r i - Nanoseconds VCE = 400V tri 36 RG = 2Ω , VGE = 15V t d(on) - Nanoseconds t r i - Nanoseconds 140 Fig. 20. Inductive Turn-on Switching Times vs. Collector Current IXYN120N65B3D1 Fig. 23. Reverse Recovery Charge vs. -diF/dt 3.8 180 3.6 160 3.4 140 3.2 120 3.0 100 QRR (µC) I F (A) Fig. 22. Diode Forward Characteristics 200 TJ = 150ºC 80 TJ = 25ºC IF = 100A TJ = 150ºC 75A VR = 400V 50A 2.8 2.6 60 2.4 40 2.2 20 2.0 1.8 0 0 0.5 1 1.5 2 200 2.5 300 400 500 600 700 800 900 1000 -diF/ dt (A/µs) VF (V) Fig. 25. Reverse Recovery Time vs. -diF/dt Fig. 24. Reverse Recovery Current vs. -diF/dt 210 50 IF = 100A TJ = 150ºC 45 75A VR = 400V TJ = 150ºC 200 50A VR = 400V 190 40 tRR (ns) I RR (A) 180 35 30 170 IF = 100A 160 25 75A 150 20 50A 140 15 130 200 300 400 500 600 700 800 900 1000 200 300 400 Fig. 26. Dynamic Parameters QRR, IRR vs. Junction Temperature 1.2 500 600 700 800 900 1000 -diF/dt (A/µs) diF/dt (A/µs) Fig. 27. Maximum Transient Thermal Impedance (Diode) 1 VR = 400V 1.0 I F = 100A -dIF/dt = 700A/µs Z (th)JC K / W KF 0.8 0.6 0.4 0.1 KF IRR 0.2 KF QRR 0.0 0 20 40 60 80 100 TJ (ºC) © 2016 IXYS CORPORATION, All Rights Reserved 120 140 160 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) IXYS REF: IXY_120N65B3(8D-Y42) 5-06-15