ETC BS62LV8007FC-70 Very low power/voltage cmos sram Datasheet

Very Low Power/Voltage CMOS SRAM
1M X 8 bit
BSI
BS62LV8007
„ FEATURES
„ GENERAL DESCRIPTION
• Vcc operation voltage : 2.7V ~ 3.6V
• Very low power consumption :
Vcc = 3.0V C-grade: 30mA (@55ns) operating current
I -grade: 31mA (@55ns) operating current
C-grade: 24mA (@70ns) operating current
I -grade: 25mA (@70ns) operating current
1.5uA (Typ.) CMOS standby current
• High speed access time :
-55
55ns
-70
70ns
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE1, CE2 and OE options
The BS62LV8007 is a high performance , very low power CMOS Static
Random Access Memory organized as 1,048,576 words by 8 bits and
operates from a range of 2.7V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current of
1.5uA at 3V/25oC and maximum access time of 55ns at 3.0V/85oC.
Easy memory expansion is provided by an active LOW chip enable (CE1)
, an active HIGH chip enable (CE2) and active LOW output enable (OE)
and three-state output drivers.
The BS62LV8007 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS62LV8007 is available in 48B BGA and 44L TSOP2 packages.
„ PRODUCT FAMILY
PRODUCT
FAMILY
OPERATING
TEMPERATURE
BS62LV8007EC
BS62LV8007FC
BS62LV8007EI
BS62LV8007FI
O
O
A
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
SPEED
( ns )
55ns : 3.0~3.6V
70ns : 2.7~3.6V
POWER DISSIPATION
STANDBY
Operating
( I CCSB1, Max )
PKG TYPE
( ICC , Max )
Vcc=3V
Vcc=3V
70ns
55ns
+0 C to +70 C
2.7V ~ 3.6V
55 / 70
5uA
30mA
-40 O C to +85O C
2.7V ~ 3.6V
55 / 70
10uA
31mA
TSOP2-44
24mA BGA-48-0912
TSOP2-44
25mA
BGA-48-0912
„ FUNCTIONAL BLOCK DIAGRAM
„ PIN CONFIGURATIONS
A4
A3
A2
A1
A0
CE1
NC
NC
DQ0
DQ1
VCC
GND
DQ2
DQ3
NC
NC
WE
A19
A18
A17
A16
A15
Vcc
RANGE
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
BS62LV8007EC
BS62LV8007EI
A5
A6
A7
OE
CE2
A8
NC
NC
DQ7
DQ6
GND
VCC
DQ5
DQ4
NC
NC
A9
A10
A11
A12
A13
A14
1
2
3
4
5
6
NC
OE
A0
A1
A2
CE2
B
NC
NC
A3
A4
CE1
NC
C
D0
NC
A5
A6
NC
D4
D
VSS
D1
A17
A7
D5
VCC
E
VCC
D2
VCC
A16
D6
VSS
F
D3
NC
A14
A15
NC
D7
G
NC
NC
A12
A13
WE
NC
H
A18
A8
A9
A10
A11
A19
A13
A17
A15
A18
A16
A14
A12
A7
A6
A5
A4
Address
Input
Buffer
22
2048
Row
Memory Array
2048 X 4096
Decoder
4096
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CE1
CE2
WE
OE
Vdd
Gnd
8
8
Data
Input
Buffer
Data
Output
Buffer
Column I/O
8
8
Write Driver
Sense Amp
512
Column Decoder
18
Control
Address Input Buffer
A11A9 A8 A3 A2 A1 A0A10 A19
48-ball BGA top view
Brilliance Semiconductor, Inc. reserves the right to modify document contents without notice.
R0201-BS62LV8007
1
Revision 1.1
Jan.
2004
BSI
BS62LV8007
„ PIN DESCRIPTIONS
Name
Function
A0-A19 Address Input
These 20 address inputs select one of the 1,048,576 x 8-bit words in the RAM
CE1 Chip Enable 1 Input
CE2 Chip Enable 2 Input
CE1 is active LOW and CE2 is active HIGH. Both chip enables must be active when
data read from or write to the device. If either chip enable is not active, the device
is
deselected and is in a standby power mode. The DQ pins will be in the high
impedance state when the device is deselected.
WE Write Enable Input
The write enable input is active LOW and controls read and write operations. With the
chip selected, when WE is HIGH and OE is LOW, output data will be present on the
DQ pins; when WE is LOW, the data present on the DQ pins will be written into the
selected memory location.
OE Output Enable Input
The output enable input is active LOW. If the output enable is active while the chip is
selected and the write enable is inactive, data will be present on the DQ pins and they
will be enabled. The DQ pins will be in the high impedance state when OE is inactive.
DQ0-DQ7 Data Input/Output
Ports
These 8 bi-directional ports are used to read data from or write data into the RAM.
Vcc
Power Supply
Gnd
Ground
„ TRUTH TABLE
MODE
WE
CE1
CE2
OE
Not selected
(Power Down)
X
H
X
X
X
X
L
X
I/O OPERATION
Vcc CURRENT
High Z
ICCSB, ICCSB1
Output Disabled
H
L
H
H
High Z
ICC
Read
H
L
H
L
DOUT
ICC
Write
L
L
H
X
DIN
ICC
„ ABSOLUTE MAXIMUM RATINGS(1)
SYMBOL
PARAMETER
„ OPERATING RANGE
RATING
UNITS
-0.5 to
Vcc+0.5
V
V TERM
Terminal Voltage with
Respect to GND
T BIAS
Temperature Under Bias
T STG
Storage Temperature
PT
Power Dissipation
1.0
W
I OUT
DC Output Current
20
mA
-40 to +85
-60 to +150
O
O
RANGE
Commercial
C
Industrial
C
O
O
0 C to +70 C
O
O
-40 C to +85 C
Vcc
2.7V ~ 3.6V
2.7V ~ 3.6V
„ CAPACITANCE (1) (TA = 25oC, f = 1.0 MHz)
SYMBOL
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
reliability.
R0201-BS62LV8007
AMBIENT
TEMPERATURE
2
CIN
CDQ
PARAMETER
Input
Capacitance
Input/Output
Capacitance
CONDITIONS
MAX.
UNIT
VIN=0V
10
pF
VI/O=0V
12
pF
1. This parameter is guaranteed and not 100% tested.
Revision 1.1
Jan.
2004
BSI
BS62LV8007
„ DC ELECTRICAL CHARACTERISTICS ( TA = -40oC to + 85oC )
PARAMETER
NAME
PARAMETER
VIL
Guaranteed Input Low
Voltage(3)
Vcc=3V
-0.5
--
0.8
V
VIH
Guaranteed Input High
Voltage(3)
Vcc=3V
2.0
--
Vcc+0.3
V
IIL
Input Leakage Current
Vcc = Max, VIN = 0V to Vcc
--
--
1
uA
ILO
Output Leakage Current
Vcc = Max, CE1 = VIH or CE2 = VIL or
OE = VIH, VI/O = 0V to Vcc
--
--
1
uA
VOL
Output Low Voltage
Vcc = Max, IOL = 2mA
Vcc=3V
--
--
0.4
V
VOH
Output High Voltage
Vcc = Min, IOH = -1mA
Vcc=3V
2.4
--
--
V
ICC(4)
Operating Power Supply
Current
CE1= VIL, CE2= VIH,
IDQ = 0mA, F = Fmax(2)
Vcc=3V
---
---
31
25
mA
ICCSB
Standby Current-TTL
CE1 = VIH or CE2= VIL, IDQ = 0mA
Vcc=3V
--
--
1
mA
Standby Current-CMOS
CE1≧Vcc-0.2V or CE2≦0.2V
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
Vcc=3V
--
1.5
10
uA
ICCSB1(5)
MIN. TYP. (1) MAX.
TEST CONDITIONS
55ns
70ns
UNITS
1. Typical characteristics are at TA = 25oC.
2. Fmax = 1/tRC .
3. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
4. Icc_Max. is 30mA(@55ns)/24mA(@70ns) during 0~70oC operation.
5.IccsB1 is 5uA at Vcc=3.0V and TA=70oC.
„ DATA RETENTION CHARACTERISTICS ( TA = -40 to + 85oC )
SYMBOL
VDR
(3)
ICCDR
tCDR
tR
PARAMETER
TEST CONDITIONS
MIN.
TYP. (1)
MAX.
UNITS
Vcc for Data Retention
CE1≧ Vcc - 0.2V or CE2 ≦ 0.2V,
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
1.5
--
--
V
Data Retention Current
CE1 ≧ Vcc - 0.2V or CE2 ≦ 0.2V,
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
--
0.8
2.5
uA
0
--
--
ns
--
--
ns
Chip Deselect to Data
Retention Time
See Retention Waveform
Operation Recovery Time
TRC
(2)
25OC
1. Vcc = 1.5V, TA = +
2. tRC = Read Cycle Time
3. IccDR(Max.) is 1.3uA at TA=70OC.
„ LOW VCC DATA RETENTION WAVEFORM (1)
( CE1 Controlled )
Data Retention Mode
Vcc
VDR ≥ 1.5V
Vcc
CE1
Vcc
tR
t CDR
CE1 ≥ Vcc - 0.2V
VIH
„ LOW VCC DATA RETENTION WAVEFORM (2)
VIH
( CE2 Controlled )
Data Retention Mode
Vcc
VDR ≧ 1.5V
Vcc
CE2
R0201-BS62LV8007
VIL
Vcc
tR
t CDR
CE2 ≦ 0.2V
3
VIL
Revision 1.1
Jan.
2004
BSI
BS62LV8007
„ KEY TO SWITCHING WAVEFORMS
„AC TEST CONDITIONS
(Test Load and Input/Output Reference)
WAVEFORM
Input Pulse Levels
Vcc / 0V
Input Rise and Fall Times
1V/ns
Input and Output
Timing Reference Level
0.5Vcc
Output Load
CL = 30pF+1TTL
CL = 100pF+1TTL
INPUTS
OUTPUTS
MUST BE
STEADY
MUST BE
STEADY
MAY CHANGE
FROM H TO L
WILL BE
CHANGE
FROM H TO L
MAY CHANGE
FROM L TO H
WILL BE
CHANGE
FROM L TO H
,
DON T CARE:
ANY CHANGE
PERMITTED
CHANGE :
STATE
UNKNOWN
DOES NOT
APPLY
CENTER
LINE IS HIGH
IMPEDANCE
”OFF ”STATE
„ AC ELECTRICAL CHARACTERISTICS ( TA = -40oC to + 85oC )
READ CYCLE
JEDEC
PARAMETER
NAME
PARAMETER
NAME
CYCLE TIME : 70ns
DESCRIPTION
CYCLE TIME : 55ns
Vcc=3.0~3.6V
Vcc=2.7~3.6V
MIN.
TYP.
MAX.
MIN. TYP. MAX.
UNIT
tAVAX
tAVQV
tRC
tAA
Read Cycle Time
t E1LQV
tACS1
Chip Select Access Time
(CE1)
t E2LQV
tGLQV
tACS2
tOE
Chip Select Access Time
(CE2)
tELQX
tCLZ
Chip Select to Output Low Z
10
--
--
10
--
--
ns
tGLQX
tEHQZ
tOLZ
tCHZ
Output Enable to Output in Low Z
10
--
--
10
--
--
ns
Chip Deselect to Output in High Z
--
--
35
--
--
30
ns
tGHQZ
tOHZ
Output Disable to Output in High Z
--
--
30
--
--
25
ns
tAXOX
tOH
Data Hold from Address Change
10
--
--
10
--
--
ns
R0201-BS62LV8007
Address Access Time
Output Enable to Output Valid
4
70
--
--
55
--
--
ns
--
--
70
--
--
55
ns
--
--
70
--
--
55
ns
--
--
70
--
--
55
ns
--
--
35
--
--
30
ns
Revision 1.1
Jan.
2004
BSI
BS62LV8007
„ SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE1
(1,2,4)
t RC
ADDRESS
t
t
t OH
AA
OH
D OUT
READ CYCLE2 (1,3,4)
CE2
t
ACS2
t
ACS1
CE1
t
(5)
CLZ
(5)
t
CHZ
t
OH
D OUT
READ CYCLE3 (1,4)
t
RC
ADDRESS
t
AA
OE
t
CE2
t
t
CE1
t
t
OE
ACS2
OLZ
ACS1
(5)
t
t
CLZ
OHZ
(5)
(1,5)
CHZ
D OUT
NOTES:
1. WE is high in read Cycle.
2. Device is continuously selected when CE1 = VIL and CE2 = VIH.
3. Address valid prior to or coincident with CE1 transition low and CE2 transition high.
4. OE = VIL .
5. The parameter is guaranteed but not 100% tested.
R0201-BS62LV8007
5
Revision 1.1
Jan.
2004
BSI
BS62LV8007
„ AC ELECTRICAL CHARACTERISTICS ( TA = -40oC to + 85oC )
WRITE CYCLE
JEDEC
PARAMETER
NAME
PARAMETER
NAME
CYCLE TIME : 70ns
DESCRIPTION
(Vcc=2.7~3.6V)
MIN. TYP.
MAX.
CYCLE TIME : 55ns
(Vcc=3.0~3.6V)
MIN. TYP.
MAX.
UNIT
t AVAX
t WC
Write Cycle Time
70
--
--
55
--
--
ns
t E1LWH
t CW
Chip Select to End of Write
70
--
--
55
--
--
ns
t AVWL
t AS
Address Set up Time
0
--
--
0
--
--
ns
t AVWH
t AW
Address Valid to End of Write
70
--
--
55
--
--
ns
t WLWH
t WP
Write Pulse Width
35
--
--
30
--
--
ns
t WHAX
t WR
Write Recovery Time
0
--
--
0
--
--
ns
t WLOZ
t WHZ
Write to Output in High Z
--
--
30
--
--
25
ns
t DVWH
t DW
Data to Write Time Overlap
30
--
--
25
--
--
ns
t WHDX
t DH
Data Hold from Write Time
0
--
--
0
--
--
ns
t GHOZ
t OHZ
Output Disable to Output in High Z
--
--
30
--
--
25
ns
t WHQX
t OW
End of Write to Output Active
5
--
--
5
--
--
ns
(CE2,CE1 , WE)
„ SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE1 (1)
t
WC
ADDRESS
(3)
t WR
OE
CE2
(5)
(11)
t CW
(5)
CE1
t AW
WE
(3)
t WP
t AS
(2)
(4,10)
t OHZ
D OUT
t DH
t DW
D IN
R0201-BS62LV8007
6
Revision 1.1
Jan.
2004
BSI
BS62LV8007
WRITE CYCLE2 (1,6)
t WC
ADDRESS
CE2
(11)
t
(5)
CE1
t
WE
AW
CW
t
t WP
WR
(3)
(2)
t AS
(4,10)
t OW
t WHZ
D OUT
(7)
(8)
t DW
t
DH
(8,9)
D IN
NOTES:
1. WE must be high during address transitions.
2. The internal write time of the memory is defined by the overlap of CE2, CE1 and WE low. All signals
must be active to initiate a write and any one signal can terminate a write by going inactive.
The data input setup and hold timing should be referenced to the second transition edge of
the signal that terminates the write.
3. TWR is measured from the earlier of CE2 going low, or CE1 or WE going high at the end of write cycle.
4. During this period, DQ pins are in the output state so that the input signals of opposite phase
to the outputs must not be applied.
5. If the CE2 high transition or CE1 low transition occurs simultaneously with the WE low transitions or after the WE
transition, output remain in a high impedance state.
6. OE is continuously low (OE = VIL ).
7. DOUT is the same phase of write data of this write cycle.
8. DOUT is the read data of next address.
9. If CE2 is high or CE1 is low during this period, DQ pins are in the output state. Then the data input signals of
opposite phase to the outputs must not be applied to them.
10. The parameter is guaranteed but not 100% tested.
11. TCW is measured from the later of CE2 going high or CE1 going low to the end of write.
R0201-BS62LV8007
7
Revision 1.1
Jan.
2004
BSI
BS62LV8007
„ ORDERING INFORMATION
BS62LV8007 X X
Z
YY
SPEED
55: 55ns
70: 70ns
PKG MATERIAL
-: Normal
G: Green
P: Pb free
GRADE
C: +0oC ~ +70oC
I: -40oC ~ +85oC
PACKAGE
E: TSOP2-44
F: BGA-48-0912
Note:
BSI (Brilliance Semiconductor Inc.) assumes no responsibility for the application or use of any product or circuit described herein. BSI does not authorize its products
for use as critical components in any application in which the failure of the BSI product may be expected to result in significant injury or death, including life-support
systems and critical medical instruments.
„ PACKAGE DIMENSIONS
TSOP2-44
R0201-BS62LV8007
8
Revision 1.1
Jan.
2004
BSI
BS62LV8007
1.4 Max.
0.25± 0.05
„ PACKAGE DIMENSIONS (continued)
NOTES:
1: CONTROLLING DIMENSIONS ARE IN MILLIMETERS.
2: PIN#1 DOT MARKING BY LASER OR PAD PRINT.
3: SYMBOL "N" IS THE NUMBER OF SOLDER BALLS.
SIDE VIEW
D 0.1
3.375
D1
N
D
E
D1
E1
e
48
12.0
9.0
5.25
3.75
0.75
E1
2.625
E ± 0.1
e
SOLDER BALL 0.35±0.05
VIEW A
48 mini-BGA (9mm x 12mm)
R0201-BS62LV8007
9
Revision 1.1
Jan.
2004
Similar pages