DMT3006LFG Green N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI Product Summary V(BR)DSS Features and Benefits ID Max TC = +25°C RDS(ON) Max 6mΩ @ VGS = 10V 30V 55.6A 10mΩ @ VGS = 4.5V Low RDS(ON) – Ensures On-State Losses are Minimized Excellent QGD × RDS(ON) Product (FOM) Advanced Technology for DC-DC Converts Small Form Factor Thermally Efficient Package Enables Higher Density End Products Occupies just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product 100% UIS (Avalanche) Rated Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it Case: PowerDI 3333-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminal Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (Approximate) ideal for high efficiency power management applications. Backlighting Power Management Functions DC-DC Converters ® D PowerDI3333-8 Pin 1 S S S 1 8 2 7 3 6 4 5 G G D D D S D Top View Top View Internal Schematic Bottom View Equivalent Circuit Ordering Information (Note 4) Part Number DMT3006LFG-7 DMT3006LFG-13 Notes: Case PowerDI3333-8 PowerDI3333-8 Packaging 2,000/Tape & Reel 3,000/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. YYWW Marking Information SK1 = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 16 = 2016) WW = Week Code (01 ~ 53) SK1 PowerDI is registered trademark of Diodes Incorporated. DMT3006LFG Document number: DS38252 Rev. 2 - 2 1 of 7 www.diodes.com May 2016 © Diodes Incorporated DMT3006LFG Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage TC = +25°C TC = +70°C TA = +25°C TA = +70°C Continuous Drain Current (Note 6) VGS = 10V Continuous Drain Current (Note 5) VGS = 10V Value 30 ±20 55.6 44.4 ID IS IDM IAS EAS 16.0 12.8 2 80 25 31 Symbol PD RθJC RθJA TJ, TSTG Value 27.8 4.5 54 -55 to +150 ID Maximum Continuous Body Diode Forward Current (Note 5) Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Avalanche Current, L=0.1mH Avalanche Energy, L=0.1mH Unit V V A A A A A mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 6) Thermal Resistance, Junction to Case (Note 6) Thermal Resistance, Junction to Ambient (Note 5) Operating and Storage Temperature Range TC = +25°C Unit W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Symbol Min Typ Max Unit BVDSS IDSS 30 — — — — 1 V μA IGSS — — ±100 nA ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) RDS(ON) VSD — 4.8 6.9 0.7 3.0 6 10 1.0 V Static Drain-Source On-Resistance 1.0 — — — CISS COSS CRSS RG QG QG QGS QGD tD(ON) tR tD(OFF) tF tRR QRR — — — — — — — — — — — — — — 1,320 490 77 1.6 10.6 22.6 3.5 3.5 2.7 2.7 13.7 5.5 10.5 21.1 — — — — — — — — — — — — — — Gate-Source Leakage Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: mΩ V Test Condition VGS = 0V, ID = 250μA VDS = 24V, VGS = 0V VGS = +20V, VDS = 0V VGS = -16V, VDS = 0V VDS = VGS, ID = 250μA VGS = 10V, ID = 12A VGS = 4.5V, ID = 12A VGS = 0V, IS = 2A pF VDS = 15V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDD = 15V, ID = 9A ns VDD = 15V, VGS = 10V, RG = 3Ω, ID = 9A ns nC IF = 1.5A, di/dt = 100A/μs 5. RJA is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. RJC is guaranteed by design while RJA is determined by the user’s board design. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMT3006LFG Document number: DS38252 Rev. 2 - 2 2 of 7 www.diodes.com May 2016 © Diodes Incorporated DMT3006LFG 20 30.0 VDS = 5V VGS = 3.5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 4.0V 25.0 VGS = 4.5V VGS=5.0V 20.0 VGS = 3.0V 15.0 10.0 15 10 125℃ 85℃ 5 5.0 25℃ 150℃ VGS = 2.5V -55℃ 0 0.0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.5 0.006 VGS = 10V 0.004 0.002 0 10 15 20 25 30 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) VGS = 4.5V 5 125℃ 85℃ 25℃ 0.004 -55℃ 0.002 0 15 20 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Temperature DMT3006LFG Document number: DS38252 Rev. 2 - 2 4.5 5 0.016 0.014 0.012 0.010 0.008 0.006 0.004 ID = 12A 0.002 0.000 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 150℃ 10 4 2 4 6 8 10 12 14 16 18 20 VGS, GATE-SOURCE VOLTAGE (V) VGS = 10V 5 3.5 Figure 4. Typical Transfer Characteristic 0.01 0 3 0.018 Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 0.006 2.5 0.020 ID, DRAIN-SOURCE CURRENT (A) 0.008 2 Figure 2. Typical Transfer Characteristic 0.01 0 1.5 VGS, GATE-SOURCE VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 0.008 1 3 of 7 www.diodes.com 2 1.6 VGS = 4.5V, ID = 12A 1.2 VGS = 10V, ID = 12A 0.8 0.4 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Temperature May 2016 © Diodes Incorporated 0.014 2.4 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) DMT3006LFG 0.012 0.01 VGS = 4.5V, ID = 12A 0.008 0.006 VGS = 10V, ID = 12A 0.004 0.002 0 -50 -25 0 25 50 75 100 125 2.2 2 1.8 ID = 1mA 1.6 1.4 ID = 250μA 1.2 1 0.8 0.6 0.4 150 -50 -25 TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Temperature 30 25 50 75 100 125 150 Figure 8. Gate Threshold Variation vs. Junction Temperature 10000 f=1MHz CT, JUNCTION CAPACITANCE (pF) VGS = 0V 25 Is, SOURCE CURRENT (A) 0 TJ, JUNCTION TEMPERATURE (℃) 20 15 TA = 85oC 10 TA = 5 125oC TA = 25oC TA = 150oC TA = -55oC Ciss 1000 0 Coss 100 Crss 10 1 0 0.3 0.6 0.9 1.2 1.5 0 5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 10 15 20 25 30 VDS, Drain-Source Voltage (V) Figure 10. Typical Junction Capacitance 10 100 PW =100µs RDS(ON) Limited ID, DRAIN CURRENT (A) VGS (V) 8 6 4 VDS = 15V, ID = 12A 2 0 0 5 10 15 20 25 Qg - (nC) Figure 11. Gate Charge DMT3006LFG Document number: DS38252 Rev. 2 - 2 10 1 0.1 PW =1ms PW =10ms PW =100ms PW =1s TJ(Max) = 150℃ TC = 25℃ Single Pulse DUT on 1*MRP Board VGS= 10V 0.01 0.01 0.1 1 PW =10s DC 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area 4 of 7 www.diodes.com May 2016 © Diodes Incorporated DMT3006LFG r(t), TRANSIENT THERMAL RESISTANCE 1 D=0.7 D=0.5 D=0.3 D=0.9 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 Rthja(t)=r(t) * Rthja RθJA(t) = r(t) * RθJA Rthja=112℃/W RθJA = 100℃/W DutyCycle, Cycle,D=t1 D = /t1t2/ t2 Duty D=Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance DMT3006LFG Document number: DS38252 Rev. 2 - 2 5 of 7 www.diodes.com May 2016 © Diodes Incorporated DMT3006LFG Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI3333-8 A3 A1 A Seating Plane D L(4x) D2 1 Pin #1 ID E4 b2(4x) E E3 E2 L1(3x) 8 z(4x) b PowerDI3333-8 Dim Min Max Typ A 0.75 0.85 0.80 A1 0.00 0.05 0.02 A3 0.203 b 0.27 0.37 0.32 b2 0.15 0.25 0.20 D 3.25 3.35 3.30 D2 2.22 2.32 2.27 E 3.25 3.35 3.30 E2 1.56 1.66 1.61 E3 0.79 0.89 0.84 E4 1.60 1.70 1.65 e 0.65 L 0.35 0.45 0.40 L1 0.39 z 0.515 All Dimensions in mm e Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI3333-8 X3 X2 8 Y2 X1 Y1 Y3 Y X DMT3006LFG Document number: DS38252 Rev. 2 - 2 Dimensions Value (in mm) C 0.650 X 0.420 X1 0.420 X2 0.230 X3 2.370 Y 0.700 Y1 1.850 Y2 2.250 Y3 3.700 1 C 6 of 7 www.diodes.com May 2016 © Diodes Incorporated DMT3006LFG IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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