ON NSVBAS20LT3G High voltage switching diode Datasheet

BAS19L, BAS20L, BAS21L,
BAS21DW5
High Voltage
Switching Diode
Features
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• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
• S and NSV Prefixes for Automotive and Other Applications
HIGH VOLTAGE
SWITCHING DIODE
Requiring Unique Site and Control Change Requirements;
AEC−Q101 Qualified and PPAP Capable
SOT−23
MAXIMUM RATINGS
Rating
Symbol
Continuous Reverse Voltage
Value
VR
Continuous Forward Current
SC−88A
5
1
CATHODE
ANODE
VRRM
Vdc
200
IFSM
2
A
Repetitive Peak Forward Current
(Pulse Train: TON = 1 s, TOFF = 0.5 s)
IFRM
0.6
A
TJ, Tstg
−55 to +150
°C
PD
385
mW
ESD
HM < 500
V
MM < 400
V
Power Dissipation (Note 1)
Electrostatic Discharge
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Mounted on FR−5 Board = 1.0 x 0.75 x 0.062 in.
3
ANODE
MARKING DIAGRAMS
mAdc
Peak Forward Surge Current
(1/2 Cycle, Sine Wave, 60 Hz)
Junction and Storage Temperature
Range
4
CATHODE
120
200
250
IF
1
ANODE
Vdc
120
200
250
BAS19
BAS20
BAS21
Repetitive Peak Reverse Voltage
BAS19
BAS20
BAS21
3
CATHODE
Unit
3
3
Jx M G
G
1
2
SOT−23 (TO−236)
CASE 318
STYLE 8
2
1
5
Jx M G
G
3
1
SC−88A (SOT−353)
CASE 419A
4
1
2
3
x
= P, R, or S
P
= BAS19L
R
= BAS20L
S
= BAS21L or BAS21DW5
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
depending upon the manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
© Semiconductor Components Industries, LLC, 1999
November, 2016 − Rev. 18
1
Publication Order Number:
BAS19LT1/D
BAS19L, BAS20L, BAS21L, BAS21DW5
THERMAL CHARACTERISTICS (SOT−23)
Characteristic
Total Device Dissipation FR−5 Board
(Note 2)
TA = 25°C
Derate above 25°C
Thermal Resistance
Junction−to−Ambient (SOT−23)
Symbol
Max
Unit
PD
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
mW/°C
417
°C/W
−55 to +150
°C
Symbol
Max
Unit
PD
385
mW
328
3.0
°C/W
mW/°C
TJmax
150
°C
TJ, Tstg
−55 to +150
°C
RJA
Total Device Dissipation Alumina Substrate
(Note 3)
TA = 25°C
Derate above 25°C
PD
Thermal Resistance Junction−to−Ambient
RJA
Junction and Storage
Temperature Range
TJ, Tstg
THERMAL CHARACTERISTICS (SC−88A)
Characteristic
Power Dissipation (Note 4)
Thermal Resistance −
Junction−to−Ambient
Derate Above 25°C
RJA
Maximum Junction Temperature
Operating Junction and Storage Temperature Range
2. FR−5 = 1.0
0.75
0.062 in.
3. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
4. Mounted on FR−5 Board = 1.0 x 0.75 x 0.062 in.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Reverse Voltage Leakage Current
(VR = 100 Vdc)
(VR = 150 Vdc)
(VR = 200 Vdc)
(VR = 100 Vdc, TJ = 150°C)
(VR = 150 Vdc, TJ = 150°C)
(VR = 200 Vdc, TJ = 150°C)
BAS19
BAS20
BAS21
BAS19
BAS20
BAS21
Reverse Breakdown Voltage
(IBR = 100 Adc)
(IBR = 100 Adc)
(IBR = 100 Adc)
BAS19
BAS20
BAS21
Min
Max
−
−
−
−
−
−
0.1
0.1
0.1
100
100
100
120
200
250
−
−
−
−
−
1.0
1.25
Unit
Adc
IR
V(BR)
Vdc
Forward Voltage
(IF = 100 mAdc)
(IF = 200 mAdc)
VF
Vdc
Diode Capacitance (VR = 0, f = 1.0 MHz)
CD
−
5.0
pF
Reverse Recovery Time (IF = IR = 30 mAdc, IR(REC) = 3.0 mAdc, RL = 100)
trr
−
50
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
BAS19L, BAS20L, BAS21L, BAS21DW5
820 +10 V
2.0 k
IF
100 H
tr
0.1 F
tp
IF
t
trr
10%
t
0.1 F
90%
D.U.T.
50 INPUT
SAMPLING
OSCILLOSCOPE
50 OUTPUT
PULSE
GENERATOR
IR(REC) = 3.0 mA
IR
VR
OUTPUT PULSE
(IF = IR = 30 mA; MEASURED
at IR(REC) = 3.0 mA)
INPUT SIGNAL
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 30 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
10 150°C
100
IR , REVERSE CURRENT (μA)
IF, FORWARD CURRENT (mA)
150°C
125°C
85°C
10
55°C
25°C
1.0
-55°C
125°C
1.0
85°C
0.1
55°C
0.01
25°C
-40°C
0.1
0.2
0.3
0.4
0.5
0.6
0.7
VF, FORWARD VOLTAGE (V)
0.8
0.9
0.001
20
1.0
50
80
Figure 2. VF vs. IF
IFSM, FORWARD SURGE MAX CURRENT (A)
CD, DIODE CAPACITANCE (pF)
Cap
1.4
1.2
1.0
0.8
0.6
0
1
2
3
4
5
230
260
Figure 3. IR vs. VR
1.6
0.4
200
170
110
140
VR, REVERSE VOLTAGE (V)
6
7
30
Based on square wave currents
TJ = 25°C prior to surge
25
20
15
10
5
0
0.001
8
0.01
0.1
1
10
100
VR, REVERSE VOLTAGE (V)
tp, PULSE ON TIME (ms)
Figure 4. Capacitance
Figure 5. Forward Surge Current
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3
1000
BAS19L, BAS20L, BAS21L, BAS21DW5
ORDERING INFORMATION
Package
Shipping†
BAS19LT1G
SOT−23
(Pb−Free)
3000 / Tape & Reel
BAS19LT3G
SOT−23
(Pb−Free)
10000 / Tape & Reel
NSVBAS19LT1G*
SOT−23
(Pb−Free)
3000 / Tape & Reel
BAS20LT1G
SOT−23
(Pb−Free)
3000 / Tape & Reel
BAS20LT3G
SOT−23
(Pb−Free)
10000 / Tape & Reel
NSVBAS20LT3G*
SOT−23
(Pb−Free)
10000 / Tape & Reel
SBAS20LT1G*
SOT−23
(Pb−Free)
3000 / Tape & Reel
BAS21LT1G
SOT−23
(Pb−Free)
3000 / Tape & Reel
SBAS21LT1G*
SOT−23
(Pb−Free)
3000 / Tape & Reel
BAS21LT3G
SOT−23
(Pb−Free)
10000 / Tape & Reel
SBAS21LT3G*
SOT−23
(Pb−Free)
10000 / Tape & Reel
BAS21DW5T1G
SC−88A
(Pb−Free)
3000 / Tape & Reel
SBAS21DW5T1G*
SC−88A
(Pb−Free)
3000 / Tape & Reel
SBAS21DW5T3G*
SC−88A
(Pb−Free)
10000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified
and PPAP Capable.
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4
BAS19L, BAS20L, BAS21L, BAS21DW5
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
0.25
3
E
1
2
T
HE
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
c
SEE VIEW C
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 °
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT
3X
2.90
3X
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0°
0.90
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
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5
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
BAS19L, BAS20L, BAS21L, BAS21DW5
PACKAGE DIMENSIONS
SC−88A (SC−70−5/SOT−353)
CASE 419A−02
ISSUE L
A
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419A−01 OBSOLETE. NEW STANDARD
419A−02.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
G
5
4
−B−
S
1
2
0.2 (0.008)
D 5 PL
B
M
INCHES
MIN
MAX
0.071
0.087
0.045
0.053
0.031
0.043
0.004
0.012
0.026 BSC
--0.004
0.004
0.010
0.004
0.012
0.008 REF
0.079
0.087
DIM
A
B
C
D
G
H
J
K
N
S
3
M
N
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.80
1.10
0.10
0.30
0.65 BSC
--0.10
0.10
0.25
0.10
0.30
0.20 REF
2.00
2.20
J
C
K
H
SOLDER FOOTPRINT
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
mm Ǔ
ǒinches
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