DYELEC DMD5N65-TR 650v n-channel power mosfet Datasheet

5N65
650V N-Channel Power MOSFET
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RDS(ON) < 2.4Ω @ VGS =10V, ID = 2.5A
Fast switching capability
Lead free in compliance with EU RoHS directive.
Green molding compound
PRODUCT SUMMARY
VDS (V)
RDS(on)(Ω)
650
ID (A)
5
2.4 @ VGS =10V
Case: TO-251,TO-252,TO-220,ITO-220,
TO-262,TO-263 Package
Pin Definition:
1. Gate
2. Drain
3. Source
Ordering Information
Part No.
Package
Packing
DMP5N65-TU
TO-251
75pcs / Tube
DMD5N65-TR
TO-252
DMD5N65-TU
TO-252
2.5Kpcs / 13” Reel
75pcs / Tube
DMT5N65-TU
TO-220
50pcs / Tube
DMF5N65-TU
ITO-220
50pcs / Tube
DMK5N65-TU
TO-262
50pcs / Tube
DMG5N65-TU
TO-263
50pcs / Tube
DMG5N65-TR
TO-263
800pcs / 13" Reel
Block Diagram
D
G
S
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Avalanche Current (Note 2)
Continuous Drain Current
Pulsed Drain Current (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
Peak Diode Recovery dv/dt (Note 4)
SYMBOL
VDSS
VGSS
IAR
ID
IDM
EAS
dv/dt
TO-220,TO-262,TO-263
Power Dissipation
ITO-220
PD
TO-251/TO-252
Junction Temperature
Operating Temperature
Storage Temperature
TJ
TOPR
TSTG
RATINGS
650
±30
5
5
20
210
4.5
UNIT
V
V
A
A
A
mJ
V/ns
100
W
36
W
54
W
+150
-55 ~ +150
-55 ~ +150
°C
°C
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 16.8mH, IAS = 5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD≤5A, di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C
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5N65
650V N-Channel Power MOSFET
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
TO-220/ITO-220
TO-262/TO-263
RATING
62.5
θJA
TO-251/ TO-252
110
TO-220/ITO-220
TO-262/TO-263
2.35
ITO-220
UNIT
°C/W
°C/W
5.5
θJC
TO-251/ TO-252
2.9
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
TEST CONDITIONS
BVDSS
VGS = 0V, ID = 250μA
IDSS
VDS = 650V, VGS = 0V
Forward
VGS = 30V, VDS = 0V
IGSS
Reverse
e
VGS = -30V, VDS = 0V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA,Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
VGS =10V, ID = 2.5A
Static Drain-Source On-State Resistance
RDS(ON)
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS = 25V, VGS = 0V,
Output Capacitance
COSS
f = 1MHz
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
VDD = 325V, ID =5A,
Turn-On Rise Time
tR
R
G = 25Ω (Note 1, 2)
Turn-Off Delay Time
tD(OFF)
Turn-Off Fall Time
tF
Total Gate Charge
QG
VDS= 520V,ID= 5.0A,
Gate-Source Charge
QGS
VGS= 10V (Note 1, 2)
Gate-Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
VGS = 0 V, IS = 5A
Drain-Source Diode Forward Voltage
VSD
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Reverse Recovery Time
trr
VGS = 0 V, IS = 5A,
dIF/dt = 100 A/ μs (Note 1)
Reverse Recovery Charge
QRR
MIN TYP MAX UNIT
V
650
1
μA
100
-100
nA
nA
V/°С
2.0
4.0
2.4
V
Ω
515
55
6.5
670
72
8.5
pF
pF
pF
10
42
38
46
15
2.5
6.6
30
90
85
100
19
ns
ns
ns
ns
nC
nC
nC
1.4
V
5
A
20
A
Gate-Source Leakage Current
0.6
2.0
300
2.2
ns
μC
Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%
2.. Essentially independent of operating temperature
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5N65
650V N-Channel Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
Same Type
as D.U.T.
VDD
* dv/dt controlled by RG
* SD controlled by pulse period
* D.U.T.-Device Under Test
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
P.W.
Period
D=
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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5N65
650V N-Channel Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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5N65
650V N-Channel Power MOSFET
TYPICAL CHARACTERISTICS
Transfer Characteristics
On-Region Characteristics
VGS
Top:
5.0V
101 Bottorm:4.5V
-1
10
*Notes:
1
1.. 250µs
250 Pu
2. TC=25℃
4.5V
Drain-Source On-Resistance, RDS(ON) (Ω)
10-2 -1
10
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0
Drain Current, ID (A)
100
101
25℃
100
*Notes:
1.. DS=40V
2. 250µs Pulse Test
10-1
2
1
10
10
Drain-Source Voltage, VDS (V)
Drain Current, ID (A)
Drain Current, ID (A)
5V
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4
6
8
Gate-Source Voltage, VGS (V)
10
10
0m
s
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5N65
650V N-Channel Power MOSFET
TO-220 Mechanical Drawing
ITO-220 Mechanical Drawing
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5N65
650V N-Channel Power MOSFET
TO-262 Mechanical Drawing
TO-263 Mechanical Drawing
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5N65
650V N-Channel Power MOSFET
TO-251 Mechanical Drawing
TO-252 Mechanical Drawing
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5N65
650V N-Channel Power MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. DIYI or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to any
intellectual property rights is granted by this document. Except as provided in DIYI’s terms and conditions of sale for
such products, DIYI assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale
and/or use of DIYI products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
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