DSK B360N Surface mount schottky barrier rectifier Datasheet

Diode Semiconductor Korea
B320N-B360N
REVERSE VOLTAGE: 20 --- 60 V
CURRENT: 3.0 A
SURFACE MOUNT SCHOTTKY
BARRIER RECTIFIERS
FEATURES
◇ Plastic package has Underwriters Laborator
111 Flammability Classification 94V-0
NSMC
◇ For surface mounted applications
◇ Low profile package
7.0±0.3
2.0±0.1
4.0±0.3
◇ Built-in strain relief
◇ Metal silicon junction, majority carrier conduction
◇ High surge capability
◇ High current capability,low forward voltage drop
8.1±0.3
2. ±0.2
3
◇ Low power loss,high effciency
◇ For use in low voltage high frequency inverters,free
111 wheeling and polarity protection applications
◇ Guardring for overvoltage protection
0.25 ±0.06
0.203MAX
1.5±0.3
o
◇ High temperature soldering guaranteed:250 C/10 1
11 seconds at terminals
MECHANICAL DATA
◇ Case:JEDEC NSMC,molded plastic over
1111passivated chip
Dimensions in millimeters
◇ Terminals:Solder Plated, solderable per MIL-STD-750,
1111Method 2026
◇ Polarity: Color band denotes cathode end
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25oC ambient temperature unless otherwise specified
B320N
B330N
B340N
B350N
B360N
B2N
B3N
B4N
B5N
B6N
UNITS
Dev ice marking code
Maximum recurrent peak reverse voltage
VRRM
20
30
40
50
60
V
Maximum RMS voltage
VRWS
14
21
28
35
42
V
Maximum DC blocking voltage
VDC
20
30
40
50
60
V
Maximum average forw ord rectified current at
c TL(SEE FIG.1) (NOTE 2)
I(AV)
3.0
A
Peak forw ard surge current 8.3ms single halfc sine-w ave superimposed on rated load(JEDEC
c Method)
IFSM
100.0
A
Maximum instantaneous forw ard voltage at
v 3.0A(NOTE.1)
Maximum DC reverse current @TA=25oC
VF
IR
Operating junction and storage temperature range
Storage temperature range
0.70
0.5
V
mA
20
at rated DC blockjing voltage(NOTE1) @TA=100oC
Typical thermal resitance (NOTE2)
0.50
RθJA
50.0
RθJL
10.0
TSTG
TJ
o
C/W
-55--- +150
o
-55--- +125
o
C
C
NOTE: 1.Pulse test:300μS pulse width,1%duty cy cle
2. P.C.B.mounted with 0.55"X0.55"(14.0X14.0mm 2)copper pad areas
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Diode Semiconductor Korea
B320N - - B360N
FIG.2-- PEAK FORWARD SURGE CURRENT
100
4.0
PEAK FORWARD SURGE
CURRENT,AMPERES
AVERAGE FORWARD RECTIFIED
CURRENT,AMPERES
FIG.1 -- FORWARD DERATING CURVE
Resistive or
inductive Load
B320N-B360N
3.0
P.C.B.MOUNTED ON
0.55"X0.55"(14.0X14.0mm)
COPPERPAD AREAS
2.0
1.0
0
50
60
70
80
90 100 110 120 130 140
8.3ms Single Half Sine-Wave
(JEDEC Method)
80
60
40
20
150 160
0
1
AMBIENT TEMPERATURE ℃
TJ=125OC
10.0
TJ=150OC
Puise Width=300 S
1%DUTY CYCLE
O
TJ=25 C
0.01
0
B320N-B340 N
B350N-B360N
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
FIG.4 -- TYPICAL REVERSE CHARACTERISTICS
1000
100
B320N-B340N
B350N-B360N
REVERSE VOLTAGE,VOLTS
0
TJ=75 C
0.1
B320N-B340N
B350N-B360N
0.01
0.001
0
TJ=25 0C
20
40
60
80
100
100
O
TJ=25 C
f=1.0MHz
Vsig=50mVp-p
10
1
FIG.6-- TYPICAL TRANSIENT THERMAL IMPEDANCE
TRANSIENT THERMAL
IMPEDANCE OC/W
JUNCTION CAPACLTANCE pF
FIG.5-TYPICAL JUNCTION CAPACITANCE
1.0
0
T J=125 C
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
10
0.1
20
10
INSTANTANEOUS REVERSE
CURRENT,MICROAMPERES
INSTANTANEOUS FORWARD
CURRENT,AMPERES
30.0
0.1
100
NUMBER OF CYCLES AT 60HZ
FIG.3 -- TYPICAL FORWARD CHARACTERISTICS
1
10
100
10
1
0.1
0.01
0.1
1
10
100
PULSE DURATION,SEC
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