tSsmi-Conduekoi tPtoducta., iJno. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MCR218 Thyristors Silicon-Controlled Rectifiers . . . designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled, solid-state devices are needed. • • • SCRs 8 AMPERES RMS 50 thru 800 VOLTS Glass-Passivated Junctions Blocking Voltage to 800 Volts TO-220 Construction — Low Thermal Resistance, High Heat Dissipation and Durability Ao- -o K (TO-220AB) MAXIMUM RATINGS (Tj = 25°C unless otherwise noted.) Rating Peak Repetitive Forward and Reverse VoltageO) (Tj=25to125°C, Gate Open) MCR218-2 MCR218-3 MCR218-4 MCR218-6 MCR218-8 MCR2 18-10 Forward Current RMS (All Conduction Angles) Peak Forward Surge Current (1/2 Cycle, Sine Wave, 60 Hz) Circuit Fusing Considerations (t = 8.3 ms) Forward Peak Gate Power Forward Average Gate Power Forward Peak Gate Current Operating Junction Temperature Range Storage Temperature Range Symbol VDRM VRRM Value unit Volts 50 100 200 400 600 800 !T(RMS) 8 Amps rrsivi 80 Amps |2t 26 A2s PGM 5 Watts PG(AV) 0.5 Watt IGM TJ 2 Amps -40 to +125 °C Tstg -40 to +150 °c /I and VRRM for all types can be applied on a continuous basis. Ratings apply forzero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information ftimished by Nl Semi-Conductors is believed to be both accurate and reliable at th« time of going to press. However NJ Semi-Conductors assumes no responsibility for uny errors or omissions discoveted in its use. NI Semi-Conductors encourages customers to verify that datasheets are current before plncing orders. MCR218 Series THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Rejc 2 °C/W Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise noted.) Symbol Characteristic Peak Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM, Gate Open) Win Typ Max Unit _ — 10 2 HA mA IDRM, IRRM Tj = 25°C Tj = 125°C Peak On-State Voltage(1 ) (lTM = 16APeak) VTM — 1.5 1.8 Volts Gate Trigger Current (Continuous dc) (Vo = 12V, RL = 100 Ohms) IGT — 10 25 mA Gate Trigger Voltage (Continuous dc) (VD = 12V, R L = 100 Ohms) (Rated VDRM, «L = 1000 Ohms, Tj = 125"C) VGT — 1.5 Volts 0.2 Holding Current (Anode Voltage = 24 Vdc, Peak Initiating On-State Current = 0.5 A, 0.1 to 10 ms Pulse, Gate Trigger Source = 7 V, 20 Ohms) Critical Rate-of-Rise of Off-State Voltage (Vp = Rated VDRM, Exponential Waveform, Gate Open, Tj = 125°C) IH ~ 16 30 mA dv/dt — 100 — V/us 1. Pulse Test: Pulse Width = 1 ms, Duty Cycle € 2%. FIGURE 1 — CURRENT DERATING UJ o: 1 CL UJ I < s => I 1 2 3 4 5 6 7 IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS) FIGURE 2 — ON-STATE POWER DISSIPATION FIGURE 3 — NORMALIZED GATE TRIGGER CURRENT 2.0 1.5 \./D = 12Vdc X s. X \. 1.0 0.9 ^ X, 0.7 ^^ ^^ ^X 0.5 ^ 'X ^ 0.4 1.0 2.0 3.0 4.0 5.0 6.0 I-T(AV).AVG' ON-STATE CURRENT (AMPS) 7.0 03 -60 -40 -20 0 20 40 60 80 Tj, JUNCTION TEMPERATURE ( C) 100 120 140