DMN2300UFL4 20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS Features and Benefits ID max TA = +25°C Footprint of Just 1.3 mm2 Ultra Low Profile Package - 0.4mm Profile (Note 6) On Resistance <200mΩ 2.11A Low Gate Threshold Voltage 260mΩ @ VGS = 2.5V 1.83A Fast Switching Speed Ultra-Small Surface Mount Package 380mΩ @ VGS = 1.8V 1.51A ESD Protected Gate 2kV 520mΩ @ VGS = 1.5V 1.29A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Max RDS(ON) 195mΩ @ VGS = 4.5V 20V Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it Case: X2-DFN1310-6 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4 ideal for high efficiency power management applications. Load Switch D1 D2 G1 ESD PROTECTED TO 2kV G2 Gate Protection Diode S1 Gate Protection Diode S2 Top View Pin-Out Device Symbol Ordering Information (Note 4) Part Number DMN2300UFL4-7 Notes: Marking 23N Reel Size (inches) 7 Tape Width (mm) 8 Quantity Per Reel 3000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information 23N DMN2300UFL4 Datasheet Number: DS35946 Rev. 3 - 2 23N = Product Type Marking Code 1 of 7 www.diodes.com December 2017 © Diodes Incorporated DMN2300UFL4 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Steady State Continuous Drain Current (Note 6) TA = +25°C TA = +85°C Value 20 ±8 2.11 1.19 6.0 Unit V V Value 0.53 1.39 238 90 -55 to +150 Unit ID Pulsed Drain Current (Note 7) IDM A A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol (Note 5) (Note 6) (Note 5) (Note 6) Power Dissipation Thermal Resistance, Junction to Ambient PD RθJA Operating and Storage Temperature Range Notes: TJ, TSTG W °C/W °C 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Device mounted on minimum recommended pad layout test board, 10µs pulse duty cycle = 1%. P(PK), PEAK TRANSIENT POIWER (W) 100 90 Single Pulse RJA = 230C/W RJA(t) = r(t) * RJA TJ - TA = P * R JA(t) 80 70 60 50 40 30 20 10 0 0.0001 0.001 0.01 0.1 1 10 100 t1, PULSE DURATION TIME (sec) Fig. 1 Single Pulse Maximum Power Dissipation 1 r(t), TRANSIENT THERMAL RESISTANCE D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.9 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 RRθJA r(t)* *RR (t) == r(t) JA(t) JA θJA = 230℃/W RRθJA = 230癈 /W JA Duty Cycle, Cycle, DD==t1t1/ / t2t2 Duty D = 0.005 Single Pulse 0.001 0.00001 0.0001 DMN2300UFL4 Datasheet Number: DS35946 Rev. 3 - 2 0.001 0.01 0.1 1 t1,t1, PULSE TIMES (sec) PULSEDURATION DURATION TIME (sec) Fig. 2 2Transient ThermalResistance Resistance Fig. Transient Thermal 2 of 7 www.diodes.com 10 100 1,000 December 2017 © Diodes Incorporated DMN2300UFL4 Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 — — — — — — 1 10 V µA µA VGS = 0V, ID = 10μA VDS = 20V, VGS = 0V VGS = ±8V, VDS = 0V VGS(TH) RDS(ON) |Yfs| VSD — 151 190 247 316 — 0.7 0.95 195 260 380 520 — 1.2 V Static Drain-Source On-Resistance 0.45 — — — — 40 — VDS = VGS, ID = 250μA VGS = 4.5V, ID = 300mA VGS = 2.5V, ID = 250mA VGS = 1.8V, ID = 100mA VGS = 1.5V, ID = 50mA VDS = 3V, ID = 30mA VGS = 0V, IS = 300mA Ciss Coss Crss Rg Qg Qgs Qgd tD(ON) tR tD(OFF) tF — — — — — — — — — — — 64.3 6.1 4.5 70 1.6 0.2 0.2 3.5 2.8 38 13 128.6 12.2 9.0 140 3.2 0.4 0.4 10 10 60 25 Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Note: mΩ mS V pF pF pF nC nC nC ns ns ns ns Test Condition VDS = 25V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = 4.5V, VDS = 15V, ID = 1A VDS = 10V, ID = 1A VGS = 10V, RG = 6Ω 8. Short duration pulse test used to minimize self-heating effect. 2.0 2.0 VGS = 4.5V VDS = 5V VGS = 2.5V )A ( T N E R R U C N IA R D ,D I VGS = 1.8V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 2.0V 1.5 VGS = 1.5V 1.0 0.5 1.5 1.0 0.5 TA = 150°C TA = 125°C VGS = 1.2V TA = 85°C TA = 25°C TA = -55°C 0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 3 Typical Output Characteristic DMN2300UFL4 Datasheet Number: DS35946 Rev. 3 - 2 5 3 of 7 www.diodes.com 0 0 0.5 1 1.5 2 2.5 VGS , GATE-SOURCE VOLTAGE (V) Fig. 4 Typical Transfer Characteristic 3 December 2017 © Diodes Incorporated 0.4 ) ( E C N A T S IS E R -N O E C R U O S -N I A R D ,N ) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () DMN2300UFL4 0.3 0.2 VGS = 2.5V VGS = 4.5V 0.1 0 R 0 0.4 0.8 1.2 1.6 ID, DRAIN-SOURCE CURRENT (A) Fig. 5 Typical On-Resistance vs. Drain Current and Gate Voltage 2 VGS = 2.5V ID = 500mA 1.2 1.0 0.8 0.4 TA = 125°C -25 0.2 TA = 85°C TA = 25°C TA = -55°C 0 0.25 0.5 0.75 1 1.25 1.5 1.75 ID, DRAIN CURRENT (A) Fig. 6 Typical On-Resistance vs. Drain Current and Temperature 2 0.8 0.6 0.4 VGS = 2.5V ID = 500mA 0.2 VGS = 4.5V ID = 1.0A 0 -50 2.0 1.2 1.0 IS, SOURCE CURRENT (A) 1.6 ID = 1mA 0.8 0.6 TA = 150°C -25 0 25 50 75 100 125 150 C)) TA, AMBIENT TEMPERATURE (° (癈 Fig. 8 On-Resistance Variation with Temperature 0 25 50 75 100 125 150 C)) TA, AMBIENT TEMPERATURE (° (癈 Fig. 7 On-Resistance Variation with Temperature VGS(TH), GATE THRESHOLD VOLTAGE (V) 0.6 0 RDSON, DRAIN-SOURCE ON-RESISTANCE () RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS = 4.5V ID = 1.0A 1.4 0.6 -50 T (S G VGS = 4.5V O ( S D 1.6 )V ( E G A T L O V D L O H S E R H T E T A G , )H 0.8 ID = 250µA 0.4 1.2 = 25癈 TA =TA25° C 0.8 0.4 0.2 V 0 -50 -25 0 25 50 75 100 125 150 TA , AMBIENT TEMPERATURE (°C) Fig. 9 Gate Threshold Variation vs. Ambient Temperature DMN2300UFL4 Datasheet Number: DS35946 Rev. 3 - 2 4 of 7 www.diodes.com 0 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 10 Diode Forward Voltage vs. Current December 2017 © Diodes Incorporated DMN2300UFL4 1,000 100,000 TA = 125°C I TA = 85°C TA = 25°C S D 1 )A 10,000 n ( T N E R 1,000 R U C E G A 100 K A E L ,S S G 10 I IGSS, LEAKAGE CURRENT (nA) IDSS, LEAKAGE CURRENT (nA) )A n ( T N E 100 R R U C E G A K A E 10 L ,S TA = -55°C 1 2 4 6 8 10 12 14 16 18 VDS , DRAIN-SOURCE VOLTAGE (V) Fig. 11 Typical Leakage Current vs. Drain-Source Voltage 20 TA = 150°C TA = 125°C TA = 85°C TA = 25°C TA = -55°C 2 4 6 8 10 12 VGS , GATE-SOURCE VOLTAGE (V) Fig.12 Leakage Current vs. Gate-Source Voltage VGS, GATE-SOURCE VOLTAGE (V) 8 VDS = 15V ID = 1A 6 4 2 0 0 0.5 1 1.5 2 2.5 Qg, TOTAL GATE CHARGE (nC) Fig. 13 Gate-Charge Characteristics DMN2300UFL4 Datasheet Number: DS35946 Rev. 3 - 2 3 5 of 7 www.diodes.com December 2017 © Diodes Incorporated DMN2300UFL4 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. X2-DFN1310-6 A A3 A1 Seating Plane D D2 z R0. f f b 150 E2 E(Pin #1 ID) d L d f f z e X2-DFN1310-6 Dim Min Max Typ A 0.40 A1 0 0.05 0.02 A3 0.13 b 0.10 0.20 0.15 D 1.25 1.38 1.30 d 0.25 D2 0.30 0.50 0.40 E 0.95 1.075 1.00 e 0.35 E2 0.30 0.50 0.40 f 0.10 L 0.20 0.30 0.25 Z 0.05 All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. X2-DFN1310-6 G2 X2 Dimensions G1 G2 G3 X1 X2 Y1 Y2 a b Y2 G1 b Y1 G3 DMN2300UFL4 Datasheet Number: DS35946 Rev. 3 - 2 a X1 6 of 7 www.diodes.com Value (in mm) 0.16 0.17 0.15 0.52 0.20 0.52 0.375 0.09 0.06 December 2017 © Diodes Incorporated DMN2300UFL4 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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