NTD6416ANL, NVD6416ANL N-Channel Power MOSFET 100 V, 19 A, 74 mW Features • • • • • Low RDS(on) High Current Capability 100% Avalanche Tested NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(on) MAX ID MAX 100 V 74 mW @ 10 V 19 A D MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 100 V Gate−to−Source Voltage − Continuous VGS ±20 V ID 19 A Steady State Power Dissipation Steady State TC = 25°C TC = 100°C 4 13 PD 71 W IDM 70 A TJ, Tstg −55 to +175 °C IS 19 A Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 18.2 A, L = 0.3 mH, RG = 25 W) EAS 50 mJ Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 Seconds TL Pulsed Drain Current TC = 25°C tp = 10 ms Operating and Storage Temperature Range Source Current (Body Diode) S 4 2 3 DPAK CASE 369AA STYLE 2 3 IPAK CASE 369D STYLE 2 MARKING DIAGRAM & PIN ASSIGNMENTS °C 260 4 Drain Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1 Gate THERMAL RESISTANCE RATINGS Parameter 1 1 2 Symbol Max Unit Junction−to−Case (Drain) − Steady State RqJC 2.1 °C/W Junction−to−Ambient − Steady State (Note 1) RqJA 47 4 Drain 2 Drain AYWW 64 16ANLG Continuous Drain Current G AYWW 64 16ANLG Parameter 3 Source 3 Source 2 Drain A Y WW 6416ANL G 1. Surface mounted on FR4 board using 1 sq in pad size, (Cu Area 1.127 sq in [2 oz] including traces). 1 Gate = Assembly Location* = Year = Work Week = Device Code = Pb−Free Package * The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package, the front side assembly code may be blank. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2016 November, 2016 − Rev. 6 1 Publication Order Number: NTD6416ANL/D NTD6416ANL, NVD6416ANL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 100 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Parameter Typ Max Unit OFF CHARACTERISTICS V 120 Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA VGS = 0 V, VDS = 100 V TJ = 25°C mV/°C 1.0 TJ = 125°C mA 10 ±100 nA 2.2 V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On−Resistance RDS(on) Forward Transconductance 1.0 5.4 gFS mV/°C VGS = 4.5 V, ID = 10 A 70 80 VGS = 10 V, ID = 10 A 62 74 VGS = 10 V, ID = 19 A 68 74 VDS = 5 V, ID = 10 A 18 mW S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance 700 VGS = 0 V, f = 1.0 MHz, VDS = 25 V 1000 pF 40 nC 110 CRSS 50 Total Gate Charge QG(TOT) 25 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 9.6 Plateau Voltage VGP 3.2 V Gate Resistance RG 2.4 W td(on) 7.0 ns 0.7 VGS = 10 V, VDS = 80 V, ID = 19 A 2.4 SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(off) VGS = 10 V, VDD = 80 V, ID = 19 A, RG = 6.1 W tf 16 35 40 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 19 A TJ = 25°C 0.9 TJ = 125°C 0.72 Reverse Recovery Time tRR 50 Charge Time Ta 38 Discharge Time Tb Reverse Recovery Charge VGS = 0 V, dIS/dt = 100 A/ms, IS = 19 A QRR 1.2 V ns 14 112 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTD6416ANL, NVD6416ANL TYPICAL CHARACTERISTICS 40 40 VDS w 10 V 10 V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) TJ = 25°C 4.5 V 30 3.6 V 20 3.2 V 10 3.0 V 30 20 TJ = 125°C 10 TJ = 25°C 2.8 V TJ = −55°C VGS = 2.4 V 0 0 0 1 2 3 4 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 5 0 1 2 3 4 VGS, GATE−TO−SOURCE VOLTAGE (V) ID = 19 A TJ = 25°C 0.1 0.09 0.08 0.07 0.06 2 4 6 8 10 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) Figure 2. Transfer Characteristics 0.11 TJ = 25°C 0.075 VGS = 4.5 V 0.070 0.065 VGS = 10 V 0.060 0.055 0.050 2 6 10 18 14 ID, DRAIN CURRENT (A) Figure 3. On−Region versus Gate−To−Source Voltage Figure 4. On−Region versus Drain Current and Gate−To−Source Voltage 10000 3 2.5 0.080 VGS, GATE−TO−SOURCE VOLTAGE (V) VGS = 0 V VGS = 10 V ID = 19 A IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) Figure 1. On−Region Characteristics 5 2 1.5 TJ = 150°C 1000 TJ = 125°C 100 1 0.5 −50 −25 0 25 50 75 100 125 150 175 10 10 20 30 40 50 60 70 80 90 TJ, JUNCTION TEMPERTURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drian−to−Source Leakage Current versus Voltage www.onsemi.com 3 100 NTD6416ANL, NVD6416ANL TYPICAL CHARACTERISTICS 1000 800 Ciss 600 400 200 Coss Crss 0 0 10 20 30 40 50 60 70 80 90 100 QT 8 80 VGS 6 4 Qgs 2 VDS = 80 V ID = 19 A TJ = 25°C 0 10 15 20 Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage and Drain−to−Source Voltage versus Total Charge 20 0 25 20 IS, SOURCE CURRENT (A) VDS = 80 V ID = 19 A VGS = 10 V td(off) 100 t, TIME (ns) 5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 tf tr 10 td(on) 1 10 TJ = 25°C VGS = 0 V 15 10 5 0 0.5 1 100 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current 50 EAS, SINGLE PULSE DRAIN−TO− SOURCE AVALANCHE ENERGY (mJ) 100 10 mS ID, DRAIN CURRENT (A) 40 Qgd 0 100 60 VDS VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ = 25°C VGS = 0 V 1200 C, CAPACITANCE (pF) VGS, GATE−TO−SOURCE VOLTAGE (V) 10 1400 10 1 VGS = 10 V SINGLE PULSE TC = 25°C 0.1 100 mS 1 mS 10 mS dc RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.01 0.001 0.1 1 10 100 1000 ID = 18.2 A 40 30 20 10 0 25 50 75 100 125 150 175 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Resistive Switching Time Variation versus Gate Resistance www.onsemi.com 4 NTD6416ANL, NVD6416ANL TYPICAL CHARACTERISTICS 100 50% Duty Cycle RqJA (°C/W) 10 1 20% 10% 5% 2% 1% P(pk) 0.1 t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 RqJA(t) = r(t) RqJA D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) RqJA(t) 10 100 1000 t, PULSE TIME (sec) Figure 13. Thermal Response (NTD6416ANL DPAK PCB Cu Area 720 mm2 PCB Cu thk 2 oz) ORDERING INFORMATION Package Shipping† NTD6416ANLT4G DPAK (Pb−Free) 2500 / Tape & Reel NTD6416ANL−1G IPAK (Pb−Free) 75 Units / Rail NVD6416ANLT4G* DPAK (Pb−Free) 2500 / Tape & Reel NVD6416ANLT4G−VF01* DPAK (Pb−Free) 2500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. www.onsemi.com 5 NTD6416ANL, NVD6416ANL PACKAGE DIMENSIONS DPAK (SINGLE GUAGE) CASE 369AA ISSUE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C A A E b3 c2 B 4 L3 Z D 1 2 H DETAIL A 3 L4 b2 e c b 0.005 (0.13) M C H L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 905 CW 2.58 0.102 5.80 0.228 3.00 0.118 1.60 0.063 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z 6.17 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 6 MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− NTD6416ANL, NVD6416ANL PACKAGE DIMENSIONS IPAK CASE 369D ISSUE C C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 Z A S 1 2 3 −T− SEATING PLANE K J F H D G 3 PL 0.13 (0.005) M DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN T ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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