Panasonic DB2W31900L Silicon epitaxial planar type Datasheet

Doc No. TT4-EA-12641
Revision. 4
Product Standards
Schottky Barrier Diode
DB2W31900L
DB2W31900L
Silicon epitaxial planar type
Unit: mm
1.6
For rectification
0.13
2
 Features
2.6
3.5
 Low forward voltage VF
 Low terminal capacitance Ct
 Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
1
 Marking Symbol: 3W
0.9
0.8
 Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
 Absolute Maximum Ratings Ta = 25 C
Parameter
Symbol
Reverse voltage (direct current)
Forward current (average) *1
Non-repetitive peak forward surge current
Junction temperature
Operating ambient temperature
Storage temperature
Note)
*2
VR
IF(AV)
IFSM
Tj
Topr
Tstg
1. Cathode
2. Anode
Panasonic
JEITA
Code
Rating
Unit
30
3
30
125
-40 to +85
-55 to +125
V
A
A
°C
°C
°C
*1 For embedded alumina substrate (substrate size: 5 cm×5 cm)
*2 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Mini2-F3-B
SC-109B
―
Internal Connection
2
1
Page 1 of 4
Established : 2010-06-22
Revised
: 2013-05-29
Doc No. TT4-EA-12641
Revision. 4
Product Standards
Schottky Barrier Diode
DB2W31900L
 Electrical Characteristics Ta = 25 C  3 C
Parameter
Symbol
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
Note)
VF
IR
Ct
*1
trr
Conditions
Min
IF = 3 A
VR = 30 V
VR = 10 V, f = 1 MHz
IF = IR = 100 mA,
Irr = 0.1 × IR, RL = 100 
Typ
Max
Unit
0.42
50
70
0.49
200
V
μA
pF
23
ns
1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on
the charge of a human body and the leakage of current from the operating equipment.
3. *1 trr test circuit
Input Pulse
Bias Application Unit (N-50BU)
tp
tr
10%
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
VR
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
90%
tp = 2 μs
tr = 0.35 ns
δ = 0.05
Output Pulse
t
IF
trr
t
Irr = 0.1 × IR
IF = 100 mA
IR = 100 mA
RL = 100 Ω
Page 2 of 4
Established : 2010-06-22
Revised
: 2013-05-29
Doc No. TT4-EA-12641
Revision. 4
Product Standards
Schottky Barrier Diode
DB2W31900L
Technical Data ( reference )
IR - VR
IF - VF
1.E-01
1.E+00
Ta = 125 °C
Reverse current IR (A)
Forward current IF (A)
1.E+01
85 °C
1.E-01
1.E-02
25 °C
1.E-03
-40 °C
1.E-04
1.E-05
0.0
Ta = 125 °C
1.E-02
85 °C
1.E-03
25 °C
1.E-04
1.E-05
1.E-06
-40 °C
1.E-07
1.E-08
0.1
0.2
0.3
0.4
0.5
0.6
0
10
Forward voltage VF (V)
1000
Ta = 25 °C
f = 1 MHz
400
Thermal resistance Rth (°C/W)
Terminal capacitance Ct (pF)
450
350
300
250
200
150
100
(1)
(2)
100
(3)
Rth(j-l) = 15 °C/W
10
(1) Non-heat sink
(2) Mounted on glass epoxy print board.
(3) Mounted on alumina print board.
Board size : 50 mm × 50 mm x 0.8 mm
Solder in : 2 mm x 2 mm
50
0
0
5
10
15
20
Reverse voltage VR (V)
25
1
0.001
30
0.01
IF(AV) - Tl
1
10
Time t (s)
100
1000
PF(AV) - IF(AV)
tp/T
IF
Forward power dissipation (Average) PF(AV) (W)
Forward current (Average) IF(AV) (A)
0.1
2
3
tp
T
DC
2.5
30
Rth - t
Ct - VR
500
3.5
20
Reverse voltage VR (V)
1/2
VR = 15 V
Tj = 125 °C
2
1.5
1/4
Sine Wave
1
0.5
0
IF
tp
T
1.5
DC
Sine Wave
1
1/2
1/4
0.5
0
0
25
50
75
100
125
Lead temperature Tl (°C)
150
175
0
0.5
1
1.5
2
2.5
3
3.5
Forward current (Average) IF(AV) (A)
Page 3 of 4
Established : 2010-06-22
Revised
: 2013-05-29
Doc No. TT4-EA-12641
Revision. 4
Product Standards
Schottky Barrier Diode
DB2W31900L
Mini2-F3-B
Unit: mm
1.6±0.1
+0.05
0.13-0.02
(7°)
3.5±0.1
2.6±0.1
2
0 to 0.1
(7°)
0 to 0.3
0.80±0.05
0.9±0.1
0.45±0.10
1
 Land Pattern (Reference) (Unit: mm)
0.85
3.05
0.85
1.2
Page 4 of 4
Established : 2010-06-22
Revised
: 2013-05-29
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