ON NB3N206S 3.3 v differential multipoint low voltage m-lvds driver receiver Datasheet

NB3N201S, NB3N206S
3.3 V Differential Multipoint
Low Voltage M-LVDS Driver
Receiver
Description
http://onsemi.com
The NB3N20XS SERIES are pure 3.3 V supply differential
Multipoint Low Voltage (M−LVDS) line Drivers and Receivers.
Devices NB3N201S and NB3N206S are TIA/EIA−899 compliant.
NB3N201S offers the Type 1 receiver threshold at 0.0 V. NB3N206S
offers the Type 2 receiver threshold at 0.1 V.
These devices have Type−1 and Type−2 receivers that detect the bus
state with as little as 50 mV of differential input voltage over a
common−mode voltage range of −1 V to 3.4 V. The Type−1 receivers
have near zero thresholds (±50 mV) and exhibit 25 mV of differential
input voltage hysteresis to prevent output oscillations with slowly
changing signals or loss of input. Type−2 receivers include an offset
threshold to provide a detectable voltage under open−circuit, idle−bus,
and other faults conditions.
NB3N201S supports Simplex bus configurations. NB3N206S
supports Simplex or Half Duplex bus configurations.
MARKING
DIAGRAMS
8
1
8
SOIC−8
D SUFFIX
CASE 751
NB20x
x
A
Y
WW
G or G
1
NB20x
AYWW
G
= Specific Device Code
= 1, 6
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 18 of this data sheet.
Features
• Low−Voltage Differential 30 W to 55 W Line Drivers
•
•
•
•
and Receivers for Signaling Rates Up to 200 Mbps
• Type−1 Receivers Incorporate 25 mV of Hysteresis
• Type−2 Receivers Provide an Offset (100 mV)
•
•
•
•
Threshold to Detect Open−Circuit and Idle−Bus
Conditions
Meets or Exceeds the M−LVDS Standard TIA/EIA−899
for Multipoint Data Interchange
Controlled Driver Output Voltage Transition Times for
Improved Signal Quality
−1 V to 3.4 V Common−Mode Voltage Range Allows
Data Transfer With up to 2 V of Ground Noise
Bus Pins High Impedance When Disabled or VCC ≤
1.5 V
© Semiconductor Components Industries, LLC, 2012
September, 2012 − Rev. 0
M−LVDS Bus Power Up/Down Glitch Free
Operating range: VCC = 3.3 ±10% V( 3.0 to 3.6 V)
Operation from –40°C to 85°C.
These are Pb−Free Devices
Applications
• Low−Power High−Speed Short−Reach Alternative to
TIA/EIA−485
• Backplane or Cabled Multipoint Data and Clock
•
•
•
1
Transmission
Cellular Base Stations
Central−Office Switches
Network Switches and Routers
Publication Order Number:
NB3N201S/D
NB3N201S, NB3N206S
R
1
8 VCC
RE
2
7 B
DE
3
6 A
D
4
5 GND
SOIC−8
NB3N201S, NB3N206S
Figure 1. Logic Diagram
Figure 2. Pinout Diagram
(Top View)
Table 1. PIN DESCRIPTION
Number
Name
I/O Type
Open Default
Description
1
R
LVCMOS Output
2
RE
LVCMOS Input
High
Receiver Enable Input Pin (LOW = Active, HIGH = High Z
Output)
3
DE
LVCMOS Input
Low
Driver Enable Input Pin (LOW = High Z Output, HIGH=Active)
4
D
LVCMOS Input
5
GND
6
A
M−LVDS Input
/Output
Transceiver Invert Input /Output Pin
7
B
M−LVDS Input
/Output
Transceiver True Input /Output Pin
8
VCC
Receiver Output Pin
Driver Input Pin
Ground Supply pin. Pin must be connected to power supply to
guarantee proper operation.
Power Supply pin. Pin must be connected to power supply to
guarantee proper operation.
http://onsemi.com
2
NB3N201S, NB3N206S
Table 2. DEVICE FUNCTION TABLE
Inputs
TYPE 1 Receiver
(NB3N201/NB3N203)
Output
VID = VA − VB
RE
R
VID w 50 mV
L
H
−50 mV < VID < 50 mV
L
?
VID ≤ −50 mV
L
L
X
H
Z
X
Open
Z
Open
L
?
Inputs
TYPE 2 Receiver
(NB3N206/NB3N207)
DRIVER
Output
VID = VA − VB
RE
R
VID w 150 mV
L
H
50 mV < VID < 150 mV
L
?
VID ≤ 50 mV
L
L
X
H
Z
X
Open
Z
Open
L
L
Input
Enable
Output
D
DE
A/Y
B/Z
L
H
L
H
H
H
H
L
Open
H
L
H
X
Open
Z
Z
X
L
Z
Z
H = High, L = Low, Z = High Impedance, X = Don’t Care, ? = Indeterminate
http://onsemi.com
3
NB3N201S, NB3N206S
Table 3. ATTRIBUTES (Note 1)
Characteristics
ESD
Protection
Value
Human Body Model (JEDEC
Standard 22, Method A114−A)
A, B, Y, Z
All Pins
±6 kV
±2 kV
Machine Model
All Pins
±200 V
Charged –Device Model (JEDEC
Standard 22, Method C101)
All Pins
±1500 V
Moisture Sensitivity, Indefinite Time Out of Drypack (Note 1)
Flammability Rating
Oxygen Index
Level 1
UL−94 code V−0 A 1/8”
28 to 34
Transistor Count
917 Devices
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
1. For additional information, see Application Note AND8003/D.
Table 4. MAXIMUM RATINGS (Note 2)
Symbol
Parameter
VCC
Supply Voltage
VIN
Input Voltage
IOUT
Output Voltage
Condition 1
Condition 2
D, DE, RE
Rating
Unit
−0.5 ≤ VCC ≤ 4.0
V
−0.5 ≤ VIN ≤ 4.0
V
A, B (201, 206)
−1.8 ≤ VIN ≤ 4.0
R
A, B
−0.3 ≤ IOUT ≤ 4.0
−1.8 ≤ IOUT ≤ 4.0
V
−40 to ≤ +85
°C
TA
Operating Temperature Range, Industrial
Tstg
Storage Temperature Range
θJA
Thermal Resistance (Junction−to−Ambient)
0 lfpm
500 lfpm
θJC
Thermal Resistance (Junction−to−Case)
θJA
Thermal Resistance (Junction−to−Ambient)
qJC
Thermal Resistance (Junction−to−Case)
Tsol
Wave Solder
PD
Power Dissipation (Continuous)
−65 to +150
°C
SOIC−8
190
130
°C/W
°C/W
(Note 3)
SOIC−8
41 to 44
°C/W
0 lfpm
500 lfpm
SOIC−14
80
°C/W
°C/W
(Note 3)
SOIC−14
36
°C/W
TA = 25°C
25°C < TA < 85°C
TA = 85°C
265
°C
725
5.8
377
mW
mW/°C
mW
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
2. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and not valid simultaneously.
If stress limits are exceeded device functional operation is not implied, damage may occur and reliability may be affected.
3. JEDEC standard multilayer board − 2S2P (2 signal, 2 power).
http://onsemi.com
4
NB3N201S, NB3N206S
Table 5. DC CHARACTERISTICS VCC = 3.3 ±10% V( 3.0 to 3.6 V), GND = 0 V, TA = −40°C to +85°C (See Notes 4, 5)
Symbol
Characteristic
Min
Typ
Max
13
1
16
22
4
24
13
Unit
ICC
Power Supply Current
Receiver Disabled Driver Enabled RE and DE at VCC, RL = 50 W, All others open
Driver and Receiver Disabled RE at VCC, DE at 0 V, RL = No Load, All others open
Driver and Receiver Enabled RE at 0 V, DE at VCC, RL = 50 W, All others open
Receiver Enabled Driver Disabled RE at 0 V, DE at 0 V, RL = 50 W, All others open
mA
VIH
Input HIGH Voltage
2
VCC
V
VIL
Input LOW Voltage
GND
0.8
V
VBUS
Voltage at any bus terminal VA, VB, VY or VZ
−1.4
3.8
V
|VID|
Magnitude of differential input voltage
0.05
VCC
DRIVER
|VAB|
Differential output voltage magnitude (see Figure 4)
480
650
mV
D|VAB|
Change in Differential output voltage magnitude between logic states (see Figure 4)
−50
50
mV
VOS(SS)
Steady state common mode output voltage (see Figure 5)
0.8
1.2
V
Change in Steady state common mode output voltage between logic states (see
Figure 5)
−50
50
mV
150
mV
2.4
V
DVOS(SS)
VOS(PP)
Peak−to−peak common−mode output voltage (see Figure 5)
VAOC
Maximum steady−state open−circuit output voltage (see Figure 9)
0
VBOC
Maximum steady−state open−circuit output voltage (see Figure 9)
0
VP(H)
Voltage overshoot, low−to−high level output (see Figure 7)
VP(L)
Voltage overshoot, high−to−low level output (see Figure 7)
2.4
V
1.2 VSS
V
uA
−0.2 VSS
V
IIH
High−level input current (D, DE) VIH = 2 V
0
10
IIL
Low−level input current (D, DE) VIL = 0.8 V
0
10
uA
24
mA
JIOSJ
Differential short−circuit output current magnitude (see Figure 6)
IOZ
High−impedance state output current (driver only)
−1.4 V ≤ (VA or VB) ≤ 3.8 V, other output at 1.2 V
−15
10
uA
IO(OFF)
Power−off output current (0 V ≤ VCC ≤ 1.5 V)
−1.4 V ≤ (VA or VB) ≤ 3.8 V, other output at 1.2 V
−10
10
uA
RECEIVER
VIT+
VIT−
VHYS
Positive−going Differential Input voltage Threshold (See Figure 11 & Tables 8 and 9)
Type 1
Type 2
Negative−going Differential Input voltage Threshold (See Figure 11 & Tables 8 and 9)
Type 1
Type 2
mV
50
150
mV
−50
50
Differential Input Voltage Hysteresis (See Figure 11 and Table 2)
mV
Type 1
Type 2
VOH
High−level output voltage (IOH = –8 mA
VOL
Low−level output voltage (IOL = 8 mA)
IIH
RE High-level input current (VIH = 2 V)
IIL
RE Low-level input current (VIL = 0.8 V)
IOZ
High−impedance state output current (VO = 0 V of 3.6 V)
CA / CB
25
0
2.4
V
−10
0
mA
−10
0
mA
−10
15
mA
Input Capacitance VI = 0.4 sin(30E6πt) + 0.5 V, other outputs at 1.2 V using HP4194A
impedance analyzer (or equivalent)
CAB
Differential Input Capacitance VAB = 0.4 sin(30E6πt) V, other outputs at 1.2 V using
HP4194A impedance analyzer (or equivalent)
CA/B
Input Capacitance Balance, (CA/CB)
3
99
http://onsemi.com
5
V
0.4
pF
2.5
pF
101
%
NB3N201S, NB3N206S
Table 5. DC CHARACTERISTICS VCC = 3.3 ±10% V( 3.0 to 3.6 V), GND = 0 V, TA = −40°C to +85°C (See Notes 4, 5)
Symbol
Characteristic
Typ
(Note
5)
Min
Max
Unit
BUS INPUT AND OUTPUT
IA
Input Current Receiver or Transceiver with Driver Disabled
uA
VA = 3.8 V, VB = 1.2 V
VA = 0.0 V or 2.4 V, VB = 1.2 V
VA = −1.4 V, VB = 1.2 V
IB
IAB
IA(OFF)
IB(OFF)
IAB(OFF)
0
−20
−32
32
20
0
VB = 3.8 V, VA = 1.2 V
VB = 0.0 V or 2.4 V, VA = 1.2 V
VB = −1.4 V, VA = 1.2 V
0
−20
−32
32
20
0
Differential Input Current Receiver or Transceiver with driver disabled (IA−IB)
VA = VB , −1.4 ≤ VA ≤ 3.8 V
−4
4
Input Current Receiver or Transceiver Power Off 0V ≤ VCC ≤ 1.5 and:
VA = 3.8 V, VB = 1.2 V
VA = 0.0 V or 2.4 V, VB = 1.2 V
VA = −1.4 V, VB = 1.2 V
0
−20
−32
32
20
0
Input Current Receiver or Transceiver Power Off 0V ≤ VCC ≤ 1.5 and:
VB = 3.8 V, VA = 1.2 V
VB = 0.0 V or 2.4 V, VA = 1.2 V
VB = −1.4 V, VA = 1.2 V
0
−20
−32
32
20
0
Receiver Input or Transceiver Input/Output Power Off Differential Input Current; (IA−IB)
VA = VB , 0 ≤ VCC ≤ 1.5 V, −1.4 ≤ VA ≤ 3.8 V
−4
4
Input Current Receiver or Transceiver with Driver Disabled
uA
uA
uA
uA
uA
CA
Transceiver Input Capacitance with Driver Disabled VA = 0.4 sin(30E6πt) + 0.5 V using
HP4194A impedance analyzer (or equivalent); VB = 1.2 V
5
pF
CB
Transceiver Input Capacitance with Driver Disabled VB = 0.4 sin(30E6πt) + 0.5 V using
HP4194A impedance analyzer (or equivalent); VA = 1.2 V
5
pF
CAB
Transceiver Differential Input Capacitance with Driver Disabled VA = 0.4 sin(30E6pt) +
0.5 V using HP4194A impedance analyzer (or equivalent);
VB = 1.2 V
CA/B
Transceiver Input Capacitance Balance with Driver Disabled, (CA/CB)
99
3.0
pF
101
%
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
4. See Figure 3. DC Measurements reference.
5. Typ value at 25°C and 3.3 VCC supply voltage.
Table 6. DRIVER AC CHARACTERISTICS VCC = 3.3 ±10% V( 3.0 to 3.6 V), GND = 0 V, TA = −40°C to +85°C (Note 6)
Symbol
Characteristic
tPLH / tPHL
Propagation Delay (See Figure 7)
tPHZ / tPLZ
Disable Time HIGH or LOW state to High Impedance (See Figure 8)
tPZH / tPZL
Enable Time High Impedance to HIGH or LOW state (See Figure 8)
tSK(P)
Pulse Skew (|tPLH − tPHL|) (See Figure 7)
tSK(PP)
Device to Device Skew similar path and conditions (See Figure 7)
Min
Typ
Max
Unit
1.0
1.5
2.4
ns
7
ns
0
7
ns
100
ps
1
ns
tJIT(PER)
Period Jitter RMS, 100 MHz (Source tr/tf 0.5 ns, 10 and 90 % points, 30k
samples. Source jitter de−embedded from Output values ) (See Figure 10)
2
3
ps
tJIT(PP)
Peak−to−peak Jitter, 200 Mbps 215−1 PRBS (Source tr/tf 0.5 ns, 10 and 90%
points, 100k samples. Source jitter de−embedded from Output values) (See
Figure 10)
30
130
ps
1.6
ns
tr / tf
Differential Output rise and fall times (See Figure 7)
1
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
6. Typ value at 25°C and 3.3 VCC supply voltage.
http://onsemi.com
6
NB3N201S, NB3N206S
Table 7. RECEIVER AC CHARACTERISTICS VCC = 3.3 ±10% V( 3.0 to 3.6 V), GND = 0 V, TA = −40°C to +85°C (Note 7)
Symbol
Characteristic
Min
Typ
Max
Unit
2
4
6
ns
Disable Time HIGH or LOW state to High Impedance (See Figure 13)
10
ns
Enable Time High Impedance to HIGH or LOW state (See Figure 13)
15
ns
tPLH / tPHL
Propagation Delay (See Figure 12)
tPHZ / tPLZ
tPZH / tPZL
tSK(P)
Pulse Skew (|tPLH − tPHL|) (See Figure 14) CL = 5 pF
ps
Type 1
Type 2
tSK(PP)
Device to Device Skew similar path and conditions (See Figure 12) CL = 5 pF
tJIT(PER)
Period Jitter RMS, 100 MHz (Source: VID = 200 mVpp for 201 and 203, VID =
400 mVpp for 206 and 207, VCM =1 V, tr/tf 0.5 ns, 10 and 90 % points, 30k samples.
Source jitter de−embedded from Output values ) (See Figure 14)
tJIT(PP)
Peak−to−peak Jitter, 200 Mbps 215−1 PRBS (Source tr/tf 0.5 ns, 10% and 90% points,
100k samples. Source jitter de−embedded from Output values) (See Figure 14)
Type 1
Type 2
tr / tf
100
300
Differential Output rise and fall times (See Figure 14) CL = 15 pF
7. Typ value at 25°C and 3.3 VCC supply voltage. .
Figure 3. Driver Voltage and Current Definitions
A. All resistors are 1% tolerance.
Figure 4. Differential Output Voltage Test Circuit
http://onsemi.com
7
4
300
500
1
ns
7
ps
ps
300
450
1
700
800
2.3
ns
NB3N201S, NB3N206S
A. All input pulses are supplied by a generator having the following characteristics: tr or tf≤ 1 ns, pulse frequency = 500 kHz,
duty cycle = 50 ± 5%.
B. C1, C2 and C3 include instrumentation and fixture capacitance within 2 cm of the D.U.T. and are 20% tolerance.
C. R1 and R2 are metal film, surface mount, 1% tolerance, and located within 2 cm of the D.U.T.
D. The measurement of VOS(PP) is made on test equipment with a –3 dB bandwidth of at least 1 GHz.
Figure 5. Test Circuit and Definitions for the Driver Common−Mode Output Voltage
Figure 6. Driver Short−Circuit Test Circuit
A. All input pulses are supplied by a generator having the following characteristics: tr or tf≤ 1 ns, frequency = 500 kHz,
duty cycle = 50 ±5%.
B. C1, C2, and C3 include instrumentation and fixture capacitance within 2 cm of the D.U.T. and are 20%.
C. R1 is a metal film, surface mount, and 1% tolerance and located within 2 cm of the D.U.T.
D. The measurement is made on test equipment with a −3 dB bandwidth of at least 1 GHz.
Figure 7. Driver Test Circuit, Timing, and Voltage Definitions for the Differential Output Signal
http://onsemi.com
8
NB3N201S, NB3N206S
A. All input pulses are supplied by a generator having the following characteristics: tr or tf≤ 1 ns, frequency = 500 kHz,
duty cycle = 50 ±5%.
B. C1, C2, C3, and C4 includes instrumentation and fixture capacitance within 2 cm of the D.U.T. and are 20%.
C. R1 and R2 are metal film, surface mount, and 1% tolerance and located within 2 cm of the D.U.T.
D. The measurement is made on test equipment with a −3 dB bandwidth of at least 1 GHz.
Figure 8. Driver Enable and Disable Time Circuit and Definitions
VA or VB
Figure 9. Maximum Steady State Output Voltage
http://onsemi.com
9
NB3N201S, NB3N206S
A. All input pulses are supplied by an Agilent 8304A Stimulus System.
B. The measurement is made on a TEK TDS6604 running TDSJIT3 application software
C. Period jitter is measured using a 100 MHz 50 ±1% duty cycle clock input.
D. Peak−to−peak jitter is measured using a 200 Mbps 215−1 PRBS input.
Figure 10. Driver Jitter Measurement Waveforms
Figure 11. Receiver Voltage and Current Definitions
http://onsemi.com
10
NB3N201S, NB3N206S
A. All input pulses are supplied by a generator having the following characteristics: tr or tf ≤ 1 ns, frequency = 50 MHz, duty cycle = 50
±5%. CL is a combination of a 20%−tolerance, low−loss ceramic, surface−mount capacitor and fixture capacitance within 2 cm of the
D.U.T.
B. The measurement is made on test equipment with a –3 dB bandwidth of at least 1 GHz.
Figure 12. Receiver Timing Test Circuit and Waveforms
http://onsemi.com
11
NB3N201S, NB3N206S
A. All input pulses are supplied by a generator having the following characteristics: tr or tf≤ 1 ns, frequency = 500 kHz, duty cycle = 50
±5%.
B. RL is 1% tolerance, metal film, surface mount, and located within 2 cm of the D.U.T.
C. CL is the instrumentation and fixture capacitance within 2 cm of the DUT and 20%.
Figure 13. Receiver Enable/Disable Time Test Circuit and Waveforms
http://onsemi.com
12
NB3N201S, NB3N206S
A. All input pulses are supplied by an Agilent 8304A Stimulus System.
B. The measurement is made on a TEK TDS6604 running TDSJIT3 application software
C. Period jitter is measured using a 100 MHz 50 ±1% duty cycle clock input.
D. Peak−to−peak jitter is measured using a 200 Mbps 215−1 PRBS input.
Figure 14. Receiver Jitter Measurement Waveforms
Table 8. TYPE−1 RECEIVER INPUT THRESHOLD TEST VOLTAGES
Applied Voltages
Resulting Differential
Input Voltage
Resulting Common−
Mode Input Voltage
VIA
VIB
VID
VIC
Receiver Output
2.400
0.000
2.400
1.200
H
0.000
2.400
–2.400
1.200
L
3.800
3.750
0.050
3.775
H
3.750
3.800
–0.050
3.775
L
–1.350
–1.400
0.050
–1.375
H
–1.400
–1.350
–0.050
–1.375
L
H = high level, L = low level, output state assumes receiver is enabled (RE = L)
Table 9. TYPE−2 RECEIVER INPUT THRESHOLD TEST VOLTAGES
Applied Voltages
Resulting Differential
Input Voltage
Resulting Common−
Mode Input Voltage
VIA
VIB
VID
VIC
Receiver Output
(Note )
2.400
0.000
2.400
1.200
H
0.000
2.400
–2.400
1.200
L
3.800
3.650
0.150
3.725
H
3.800
3.750
0.050
3.775
L
–1.250
–1.400
0.150
–1.325
H
–1.350
–1.400
0.050
–1.375
L
H = high level, L = low level, output state assumes receiver is enabled (RE = L)
http://onsemi.com
13
NB3N201S, NB3N206S
A or B
Figure 15. Equivalent Input and Output Schematic Diagrams
APPLICATION INFORMATION
Receiver Input Threshold (Failsafe)
Type 2 receivers have their differential input voltage
thresholds offset from zero volts to detect the absence of a
voltage difference. The impact to receiver output by the
offset input can be seen in Table 10 and Figure 16.
The MLVDS standard defines a type 1 and type 2 receiver.
Type 1 receivers include no provisions for failsafe and have
their differential input voltage thresholds near zero volts.
Table 10. RECEIVER INPUT VOLTAGE THRESHOLD REQUIREMENTS
Receiver Type
Output Low
Output High
Type 1
–2.4 V ≤ VID ≤ –0.05 V
0.05 V ≤ VID ≤ 2.4 V
Type 2
–2.4 V ≤ VID ≤ 0.05 V
0.15 V ≤ VID ≤ 2.4 V
http://onsemi.com
14
NB3N201S, NB3N206S
Figure 16. Receiver Differential Input Voltage Showing Transition Regions by Type
LIVE INSERTION/GLITCH−FREE POWER UP/DOWN
While the M−LVDS interface for these devices is glitch
free on power up/down, the receiver output structure is not.
Figure 17 shows the performance of the receiver output pin,
R (CHANNEL 2), as VCC (CHANNEL 1) is ramped. The
glitch on the R pin is independent of the RE voltage. Any
complications or issues from this glitch are easily resolved
in power sequencing or system requirements that suspend
operation until VCC has reached a steady state value.
The NB3N201/206 family of products provides a
glitch−free power up/down feature that prevents the
M−LVDS outputs of the device from turning on during a
power up or power down event. This is especially important
in live insertion applications, when a device is physically
connected to an M−LVDS multipoint bus and VCC is
ramping.
http://onsemi.com
15
NB3N201S, NB3N206S
Figure 17. M−LVDS Receiver Output: VCC (CHANNEL 1), R Pin (CHANNEL 2)
Simplex Theory Configurations: Data flow is
unidirectional and Point−to−Point from one Driver to one
Receiver. NB3N201SDG and NB3N206SDG devices
provide a high signal current allowing long drive runs and
high noise immunity. Single terminated interconnects yield
Figure 18. Point−to−Point Simplex
Termination
high amplitude levels. Parallel terminated interconnects
yield typical MLVDS amplitude levels and minimizes
reflections. See Figures 18 and 19. A NB3N201SDG and
NB3N206SDG can be used as the driver or as a receiver.
Single
Figure 19. Parallel−Terminated Simplex
Simplex Multidrop Theory Configurations: Data flow is
unidirectional from one Driver with one or more Receivers
Multiple boards required. Single terminated interconnects
yield high amplitude levels. Parallel terminated
interconnects yield typical MLVDS amplitude levels and
minimizes reflections. On the Evaluation Test Board,
Headers P1, P2, and P3 may be used as need to interconnect
transceivers to a each other or a bus. See Figures 20 and 21.
A NB3N201SDG and NB3N206SDG can be used as the
driver or as a receiver.
http://onsemi.com
16
NB3N201S, NB3N206S
Figure 20. Multidrop or Distributed Simplex with Single Termination
Figure 21. Multidrop or Distributed Simplex with Double Termination
Half
Duplex
Multinode
Multipoint
Theory
Configurations: Data flow is unidirectional and selected
from one of multiple possible Drivers to multiple Receivers.
One “Two Node” multipoint connection can be
accomplished with a single evaluation test board. More than
Two Nodes requires multiple evaluation test boards. Parallel
terminated interconnects yield typical MLVDS amplitude
levels and minimizes reflections. Parallel terminated
interconnects yield typical LMVDS amplitude levels and
minimizes reflections. On the Test Board, Headers P1, P2,
and P3 may be used as need to interconnect transceivers to
each other or a bus. See Figure 22. A NB3N206SDG can be
used as the driver or as a receiver.
Figure 22. Multinode Multipoint Half Duplex (requires Double Termination)
Figure 23.
http://onsemi.com
17
NB3N201S, NB3N206S
ORDERING INFORMATION
Receiver
Pin 1 Quadrant
Package
Shipping†
NB3N201SDG
Type 1
Q1
SOIC*8
(Pb−Free)
98 Units / Rail
NB3N201SDR2G
Type 1
Q1
SOIC*8
(Pb−Free)
2500 / Tape & Reel
NB3N206SDG
Type 2
Q1
SOIC*8
(Pb−Free)
98 Units / Rail
NB3N206SDR2G
Type 2
Q1
SOIC*8
(Pb−Free)
2500 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
18
NB3N201S, NB3N206S
PACKAGE DIMENSIONS
SOIC−8 NB
CASE 751−07
ISSUE AK
−X−
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
A
8
5
S
B
0.25 (0.010)
M
Y
M
1
4
−Y−
K
G
C
N
DIM
A
B
C
D
G
H
J
K
M
N
S
X 45 _
SEATING
PLANE
−Z−
0.10 (0.004)
H
D
0.25 (0.010)
M
Z Y
S
X
M
J
SOLDERING FOOTPRINT*
S
MILLIMETERS
MIN
MAX
4.80
5.00
3.80
4.00
1.35
1.75
0.33
0.51
1.27 BSC
0.10
0.25
0.19
0.25
0.40
1.27
0_
8_
0.25
0.50
5.80
6.20
INCHES
MIN
MAX
0.189
0.197
0.150
0.157
0.053
0.069
0.013
0.020
0.050 BSC
0.004
0.010
0.007
0.010
0.016
0.050
0 _
8 _
0.010
0.020
0.228
0.244
1.52
0.060
7.0
0.275
4.0
0.155
0.6
0.024
1.270
0.050
SCALE 6:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
http://onsemi.com
19
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NB3N201S/D
Similar pages