8N65 650V N-Channel Power MOSFET ● RDS(ON)<1.4Ω @ VGS=10V ● Fast switching capability ● ● Low gate charge Lead free in compliance with EU RoHS directive. ● Green molding compound PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 650 ID (A) 8 1.4 @ VGS =10V Pin Definition: ● 1. Gate 2. Drain 3. Source Case: TO-220,ITO-220,TO-262,TO-263 Package Ordering Information Package Packing DMT8N65-TU TO-220 50pcs / Tube DMF8N65-TU ITO-220 50pcs / Tube DMK8N65-TU 50pcs / Tube DMG8N65-TU TO-262 TO-263 DMG8N65-TR TO-263 Part No. Block Diagram D 50pcs / Tube 800pcs / 13" Reel G S ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Avalanche Current (Note 2) Continuous Drain Current Pulsed Drain Current (Note 2) Avalanche Energy Single Pulsed (Note 3) Peak Diode Recovery dv/dt (Note 4) SYMBOL VDSS VGSS IAR ID IDM EAS dv/dt TO-220/TO-262/TO-263 Power Dissipation UNIT V V A A A mJ ns 142 W 48 W +150 -55 ~ +150 -55 ~ +150 °C °C °C PD ITO-220 Junction Temperature Operating Temperature Storage Temperature RATINGS 650 ±30 8 8 32 230 4.5 TJ TOPR TSTG Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ 3. L = 7.1mH, IAS = 8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD ≤ 7.5A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C May.2015-REV.00 www.dyelec.com 1/9 8N60 600V N-Channel Power MOSFET THERMAL DATA PARAMETER Junction to Ambient SYMBOL RATING UNIT θJA 62.5 °C/W TO-220/ITO-220 TO-262/TO-263 TO-220/TO-262/TO-263 0.85 θJC Junction to Case ITO-220 °C/W 2.6 ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL TEST CONDITIONS BVDSS VGS=0V, ID=250μA IDSS VDS=650V, VGS=0V Forward VG=30V, VDS 0V = IGSS VGS=-30V, VDS=0V Reverse Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA VGS = 10V, ID = 4A Static Drain-Source On-State Resistance RDS(ON) DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=25V, VGS=0V, f=1.0 MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) VDD =520V, ID =8A, Turn-On Rise Time tR R G =25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Total Gate Charge QG VDS=480V, ID=8A, Gate-Source Charge QGS VGS=10V (Note 1, 2) Gate-Drain Charge QGD DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 8A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time trr VGS=0V, IS=8A, dIF/dt =100 A/μs (Note 1) Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%. 2. Essentially independent of operating temperature. MIN TYP MAX UNIT 650 V Gate- Source Leakage Current May.2015-REV.00 www.dyelec.com 10 μA 100 -100 nA nA V/°C 4.0 1.4 V Ω 0.7 2.0 1.2 1145 1255 118 135 19 25 pF pF pF 100 130 320 140 130 ns ns ns ns nC nC nC 1.4 V 8 A 32 A 84 100 275 64.5 115 12 40 365 3.4 ns μC 2/9 8N65 650V N-Channel Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS Same Type as D.U.T. VDD * dv/dt controlled by RG * SD controlled by pulse period * D.U.T.-D vice Under Test Peak Diode Recovery dv/dt Test Circuit VGS (Driver) P.W. Period D= P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms May.2015-REV.00 www.dyelec.com 3/9 8N65 650V N-Channel Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit May.2015-REV.00 Time Unclamped Inductive Switching Waveforms www.dyelec.com 4/9 8N65 650V N-Channel Power MOSFET TYPICAL CHARACTERISTICS On-State Characteristics Transfer Characteristics VGS Top: 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V 5.5 V Bottorm:5.0V 10 10 1 Drain Current, ID (A) Drain Current, ID (A) 100 5.0V 0.1 Notes: 1. 250µs Pulse Test 2. TC=25°C 0.1 25°C 1 Reverse Drain Current, IDR (A) Drain-Source On-Resistance, RDS(ON) (ohm) 4 3 VGS=20V 2 1 5 10 15 Drain Current, ID (A) 25°C 1 Capacitance (pF) 1300 1100 Coss Crss 500 300 Notes: 100 1. VGS=0V 2. f = 1MHz 0 0.1 1 10 Drain-SourceVoltage, VDS (V) May.2015-REV.00 1.4 1.6 1.8 Source-Drain Voltage, VSD (V) 12 Gate-Source Voltage, VGS (V) Ciss 1500 Notes: 1. VGS=0V 2. 250µs Test 0.1 0.2 0.4 0.6 0.8 1.0 1.2 20 Ciss=Cgs+Cgd (Cds=shorted) Coss=Cds+Cgd Crss=Cgd 1900 700 10 150°C Capacitance Characteristics (Non-Repetitive) 900 8 10 VGS=10V 1700 6 Body Diode Forward Voltage vs. Source Current TJ=25°C 0 4 Gate-Source Voltage, VGS (V) 5 0 Notes: 1. VDS=40V 2. 250µs Pulse Test 0.1 2 1 10 Drain-to-Source Voltage, VDS (V) On-Resistance Variation vs. Drain Current and Gate Voltage 6 150°C Gate Charge Characteristics ID=7.5A 10 VDS=520V 8 VDS=300V VDS=120V 6 4 2 0 0 5 10 15 20 25 30 Total Gate Charge, QG (nC) www.dyelec.com 5/9 8N65 650V N-Channel Power MOSFET Breakdown Voltage Variation vs. Temperature 1.2 On-Resistance Junction Temperature Drain-Source On-Resistance, RDS(ON) (Normalized) Drain-Source Breakdown Voltage, BVDSS (Normalized) TYPICAL CHARACTERISTICS 1.1 1.0 0.9 Note: 1. VGS=0V 2. ID=250µA 0.8 -100 -50 0 50 100 150 200 2.5 2.0 1.5 1.0 Note: 1. VGS=10V 2. ID=4A 0.5 0.0 -100 -50 0 50 100 150 Junction Temperature, TJ (°C) Junction Temperature, TJ (°C) Maximum Safe Operating Area Maximum Drain Current vs. Case Temperature 100 10 Operation in This Area is Limited by RDS(on) 10µs 100µs 10 1ms DC 10ms 1 Notes: 1. TJ=25°C 2. TJ=150°C 0.1 3. Single Pulse 1 200 8 Drain Current, ID (A) Drain Current, ID (A) 3.0 6 4 2 0 10 100 1000 Drain-Source Voltage, VDS (V) 25 50 75 100 125 150 Case Temperature, TC (°C) Transient Thermal Response Curve Thermal Response, θJC (t) 1 D=0.5 D=0.2 D=0.1 0.1 D=0.05 0.02 0.01 Notes: Single pulse 1. θJC (t) = 0.85°C/W Max. 2. Duty Factor, D=t1/t2 3. TJM-TC=PDM×θJC (t) 0.01 10-5 10-4 10-3 10-2 10-1 100 101 Square Wave Pulse Duration, t1 (sec) May.2015-REV.00 www.dyelec.com 6/9 8N65 650V N-Channel Power MOSFET TO-220 Mechanical Drawing ITO-220 Mechanical Drawing May.2015-REV.00 www.dyelec.com 7/9 8N65 650V N-Channel Power MOSFET TO-262 Mechanical Drawing TO-263 Mechanical Drawing May,2015-REV.00 www.dyelec.com 8/9 8N65 650V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. DIYI or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in DIYI’s terms and conditions of sale for such products, DIYI assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of DIYI products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify DIYI for any damages resulting from such improper use or sale. Mar.2015-REV.00 www.dyelec.com 9/9