IRF AUIRL1404ZSTRR Hexfetâ® power mosfet Datasheet

PD - 96331
AUIRL1404Z
AUIRL1404ZS
AUIRL1404ZL
AUTOMOTIVE GRADE
Features
l
l
l
l
l
l
l
l
HEXFET® Power MOSFET
Logic Level
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
V(BR)DSS
D
40V
RDS(on) typ.
max.
G
ID (Silicon Limited)
S
G
D
TO-220AB
AUIRL1404Z
Absolute Maximum Ratings
180A
l
D
D
D
3.1mΩ
ID (Package Limited) 160A
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low onresistance per silicon area. Additional features of this
design are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche
rating . These features combine to make this design an
extremely efficient and reliable device for use in
Automotive applications and a wide variety of other
applications.
2.5mΩ
S
G
D
S
G
D2Pak
AUIRL1404ZS
D
S
TO-262
AUIRL1404ZL
G
D
S
Gate
Drain
Source
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS
EAS (Tested )
IAR
EAR
TJ
TSTG
Max.
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V(Silicon Limited)
Continuous Drain Current, VGS @ 10V(Package Limited)
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
c
c
h
g
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
RθJA
180
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount)
i
i
j
d
Units
l
130
160
790
200
W
1.3
± 16
W/°C
V
A
190
490
See Fig.12a, 12b, 15, 16
mJ
A
mJ
-55 to + 175
°C
300 (1.6mm from case )
10 lbf in (1.1N m)
y
y
Typ.
Max.
–––
0.50
–––
0.75
–––
62
–––
40
k
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
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1
08/26/10
AUIRL1404Z/S/L
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
∆V(BR)DSS/∆TJ
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
gfs
IDSS
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
40
–––
–––
–––
–––
1.4
120
–––
–––
–––
–––
–––
0.034
2.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
3.1
4.7
5.9
2.7
–––
20
250
200
-200
Conditions
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
VGS = 10V, ID = 75A * *
mΩ VGS = 5.0V, ID = 40A
VGS = 4.5V, ID = 40A
V VDS = VGS, ID = 250µA
S VDS = 10V, ID = 75A* *
µA VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
nA VGS = 16V
VGS = -16V
e
e
e
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
75
28
40
19
180
30
49
4.5
110
–––
–––
–––
–––
–––
–––
–––
nC
ns
nH
Conditions
ID = 75A* *
VDS = 32V
VGS = 5.0V
VDD = 20V
ID = 75A* *
RG = 4.0Ω
VGS = 5.0V
Between lead,
e
e
D
LS
Internal Source Inductance
–––
7.5
–––
6mm (0.25in.)
from package
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
5080
970
570
3310
870
1280
–––
–––
–––
–––
–––
–––
S
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 32V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 32V
pF
G
f
Diode Characteristics
Parameter
IS
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
VSD
trr
Qrr
ton
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Note
2
c
Min. Typ. Max. Units
–––
–––
180
A
–––
–––
720
–––
–––
–––
–––
26
18
1.3
39
27
Conditions
MOSFET symbol
V
ns
nC
showing the
integral reverse
D
G
S
p-n junction diode.
TJ = 25°C, IS = 75A* * , VGS = 0V
TJ = 25°C, IF = 75A* * , VDD = 20V
di/dt = 100A/µs
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
∗ ∗ are on page 3
 through Š ,
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AUIRL1404Z/S/L
Qualification Information
†
Automotive
(per AEC-Q101)
Comments:
This
part
number(s)
passed
Automotive qualification. IR’s Industrial and
Consumer qualification level is granted by
extension of the higher Automotive level.
Qualification Level
MSL1
3L-D2 PAK
Moisture Sensitivity Level
3L-TO-262
N/A
3L-TO-220
Class M4 (425V)
Machine Model
ESD
(per AEC-Q101-002)
Human Body Model
Charged Device Model
Class H1C (2000V)
(per AEC-Q101-001)
Class C5 (1125V)
(per AEC-Q101-005)
RoHS Compliant
†
††
Yes
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
†† Exceptions to AEC-Q101 requirements are noted in the qualification report.
Notes:
 Repetitive rating; pulse width limited by max. junction
temperature. (See fig. 11).
‚ Limited by TJmax, starting TJ = 25°C, L = 0.066mH,
RG = 25Ω, IAS = 75A, VGS =10V. Part not recommended for
use above this value.
ƒ Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
† This value determined from sample failure population. 100% tested to
this value in production.
‡ This is only applied to TO-220AB package.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to application
note #AN-994.
‰ TO-220 device will have an Rth value of 0.65°C/W.
„ Coss eff. is a fixed capacitance that gives the same charging Š Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 160A. Note that current
time as C while V is rising from 0 to 80% V
.
oss
DS
DSS
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical
repetitive avalanche performance.
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limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
* * All AC and DC test conditions based on former package limited
current of 75A.
3
AUIRL1404Z/S/L
1000
1000
VGS
10V
7.0V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
BOTTOM
100
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
10
3.0V
60µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
BOTTOM
100
3.0V
10
60µs PULSE WIDTH
Tj = 175°C
1
100
0.1
V DS, Drain-to-Source Voltage (V)
10
100
Fig 2. Typical Output Characteristics
1000
200
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current (Α)
1
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
T J = 175°C
100
10
TJ = 25°C
VDS = 10V
60µs PULSE WIDTH
1.0
2
3
4
5
6
7
8
9
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
VGS
10V
7.0V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
TJ = 25°C
150
100
T J = 175°C
50
V DS = 10V
0
10
0
50
100
150
200
ID,Drain-to-Source Current (A)
Fig 4. Typical Forward Transconductance
vs. Drain Current
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AUIRL1404Z/S/L
100000
6.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
VGS, Gate-to-Source Voltage (V)
ID= 75A
C, Capacitance(pF)
C oss = C ds + C gd
10000
Ciss
Coss
1000
Crss
4.0
3.0
2.0
1.0
0.0
100
1
10
100
0
VDS, Drain-to-Source Voltage (V)
20
40
60
80
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
1000.00
10000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
VDS= 32V
VDS= 20V
5.0
T J = 175°C
100.00
10.00
T J = 25°C
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1000
100µsec
100
1msec
10
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
1.00
10msec
1
0.0
0.5
1.0
1.5
2.0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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2.5
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
AUIRL1404Z/S/L
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
200
ID, Drain Current (A)
Limited By Package
150
100
50
ID = 75A
VGS = 10V
1.5
1.0
0.5
0
25
50
75
100
125
150
-60 -40 -20 0
175
20 40 60 80 100 120 140 160 180
T J , Junction Temperature (°C)
T C , Case Temperature (°C)
Fig 10. Normalized On-Resistance
vs. Temperature
Fig 9. Maximum Drain Current vs.
Case Temperature
1
Thermal Response ( Z thJC )
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
0.001
τJ
1E-005
τJ
τ1
τ1
R2
R2
τ2
R3
R3
τ3
τ2
Ci= τi/Ri
Ci i/Ri
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
R1
R1
τC
τ
τ3
Ri (°C/W) τi (sec)
0.000213
0.212
0.277
0.001234
0.261
0.021750
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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1
AUIRL1404Z/S/L
DRIVER
L
VDS
D.U.T
RG
+
V
- DD
IAS
VGS
20V
A
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
EAS , Single Pulse Avalanche Energy (mJ)
800
15V
ID
TOP
15A
24A
BOTTOM 75A
700
600
500
400
300
200
100
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
I AS
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGS
QGD
VG
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
.3µF
D.U.T.
+
V
- DS
VGS(th) Gate threshold Voltage (V)
3.0
2.5
2.0
ID = 250µA
1.5
1.0
0.5
-75 -50 -25
VGS
0
25
50
75 100 125 150 175 200
T J , Temperature ( °C )
3mA
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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Fig 14. Threshold Voltage vs. Temperature
7
AUIRL1404Z/S/L
100
Duty Cycle = Single Pulse
Avalanche Current (A)
0.01
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆ Tj = 25°C due to
avalanche losses
0.05
0.10
10
1
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
EAR , Avalanche Energy (mJ)
200
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 75A
150
100
50
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
8
Fig 16. Maximum Avalanche Energy
vs. Temperature
175
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T jmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asT jmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav ) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
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AUIRL1404Z/S/L
D.U.T
Driver Gate Drive
ƒ
+
‚
-
„
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+

RG
V DD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• I SD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D=
Period
P.W.
+
+
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
-
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
*
ISD
VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V DS
V GS
RG
RD
D.U.T.
+
-V DD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on)
tr
t d(off)
tf
Fig 18b. Switching Time Waveforms
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9
AUIRL1404Z/S/L
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
Part Number
AUIRL1404Z
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRL1404Z/S/L
D2Pak Package Outline (Dimensions are shown in millimeters (inches))
D2Pak Part Marking Information
Part Number
AUIRL1404ZS
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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11
AUIRL1404Z/S/L
TO-262 Package Outline (
Dimensions are shown in millimeters (inches))
TO-262 Part Marking Information
Part Number
AURL1404ZL
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
12
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AUIRL1404Z/S/L
D2Pak Tape & Reel Infomation
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
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60.00 (2.362)
MIN.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
13
AUIRL1404Z/S/L
Ordering Information
Base part
AUIRL1404Z
AUIRL1404ZL
AUIRL1404ZS
14
Package Type
TO-220
TO-262
D2Pak
Standard Pack
Form
Tube
Tube
Tube
Tape and Reel Left
Tape and Reel Right
Complete Part Number
Quantity
50
50
50
800
800
AUIRL1404Z
AUIRL1404ZL
AUIRL1404ZS
AUIRL1404ZSTRL
AUIRL1404ZSTRR
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AUIRL1404Z/S/L
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the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services
at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow
automotive industry and / or customer specific requirements with regards to product discontinuance and process change
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IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s
standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this
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15