IRLR8729PbF-1 HEXFET® Power MOSFET VDS 30 V 8.9 mΩ 10 nC D D RDS(on) max (@VGS = 10V) Q g (typical) f ID 58 (@TC = 25°C) S G G A D-Pak IRLR8729PbF-1 S Features Benefits Industry-standard pinout D-Pak and I-Pak Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification Base Part Number Package Type IRLR8729PbF-1 D-Pak ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Quantity Tape and Reel Tape and Reel Left 2000 3000 Orderable Part Number IRLR8729TRPbF-1 IRLR8729TRLPbF-1 Absolute Maximum Ratings Parameter Max. Units 30 V VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V ± 20 58 41 IDM Continuous Drain Current, VGS @ 10V Pulsed Drain Current PD @TC = 25°C Maximum Power Dissipation PD @TC = 100°C Maximum Power Dissipation TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range ID @ TC = 25°C ID @ TC = 100°C c f f A 260 g g W 55 27 0.37 -55 to + 175 Soldering Temperature, for 10 seconds W/°C °C 300 (1.6mm from case) Thermal Resistance Parameter RθJC RθJA Junction-to-Case Junction-to-Ambient (PCB Mount) RθJA Junction-to-Ambient 1 g www.irf.com © 2014 International Rectifier Typ. Max. ––– 2.73 ––– 50 ––– 110 Submit Datasheet Feedback Units °C/W June 29, 2014 IRLR8729PbF-1 Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ΔΒVDSS/ΔTJ RDS(on) VGS(th) ΔVGS(th)/ΔTJ Min. Typ. Max. Units V Conditions Drain-to-Source Breakdown Voltage 30 ––– ––– Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance ––– ––– 21 6.0 ––– 8.9 Gate Threshold Voltage ––– 1.35 8.9 1.8 mV/°C Reference to 25°C, ID = 1mA VGS = 10V, ID = 25A mΩ 11.9 VGS = 4.5V, ID = 20A 2.35 V VDS = VGS, ID = 25μA VGS = 0V, ID = 250μA e e Gate Threshold Voltage Coefficient ––– -6.2 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– ––– ––– 1.0 150 μA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage ––– ––– ––– ––– 100 -100 nA VGS = 20V VGS = -20V gfs Qg Forward Transconductance Total Gate Charge 91 ––– ––– 10 ––– 16 S VDS = 15V, ID = 20A Qgs1 Qgs2 Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge ––– ––– 2.1 1.3 ––– ––– nC VDS = 15V VGS = 4.5V Qgd Gate-to-Drain Charge ––– 4.0 ––– ID = 20A Qgodr Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) ––– ––– 2.6 4.8 ––– ––– See Fig. 16 Output Charge Gate Resistance ––– 6.3 ––– nC 1.6 10 47 2.7 ––– ––– Ω Turn-On Delay Time Rise Time ––– ––– ––– td(off) tf Turn-Off Delay Time Fall Time ––– ––– 11 10 ––– ––– Ciss Input Capacitance ––– 1350 ––– Coss Crss Output Capacitance Reverse Transfer Capacitance ––– ––– 280 120 ––– ––– Qsw Qoss RG td(on) tr ns VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5V ID = 20A e RG = 1.8Ω See Fig. 14 VGS = 0V pF VDS = 15V ƒ = 1.0MHz Avalanche Characteristics Parameter EAS IAR Single Pulse Avalanche Energy Avalanche Current EAR Repetitive Avalanche Energy c d c Typ. ––– ––– Max. 74 20 Units mJ A ––– 5.5 mJ Diode Characteristics Parameter IS Min. Typ. Max. Units Continuous Source Current (Body Diode) ––– ––– ISM Pulsed Source Current (Body Diode) ––– ––– VSD trr Diode Forward Voltage Reverse Recovery Time ––– ––– ––– 16 Qrr ton Reverse Recovery Charge ––– 19 c Forward Turn-On Time 2 58 f Conditions MOSFET symbol A showing the integral reverse 1.0 24 V ns 29 nC p-n junction diode. TJ = 25°C, IS = 20A, VGS = 0V TJ = 25°C, IF = 20A, VDD = 15V di/dt = 300A/μs 260 e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 29, 2014 IRLR8729PbF-1 1000 1000 VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V 2.5V 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 100 10 1 ≤60μs PULSE WIDTH BOTTOM 10 2.5V Tj = 25°C 2.5V 1 0.1 1 10 100 0.1 V DS, Drain-to-Source Voltage (V) 1 10 100 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) ≤60μs PULSE WIDTH Tj = 175°C 0.1 100 T J = 175°C 10 T J = 25°C 1 VDS = 15V ≤60μs PULSE WIDTH 0.1 ID = 25A VGS = 10V 1.5 1.0 0.5 1 2 3 4 5 6 7 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 3 VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V 2.5V www.irf.com © 2014 International Rectifier 8 -60 -40 -20 0 20 40 60 80 100120140160180 T J , Junction Temperature (°C) Fig 4. Normalized On-Resistance vs. Temperature Submit Datasheet Feedback June 29, 2014 IRLR8729PbF-1 10000 5.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED ID= 20A VGS, Gate-to-Source Voltage (V) C rss = C gd C, Capacitance (pF) C oss = C ds + C gd Ciss 1000 Coss Crss 3.0 2.0 1.0 0.0 100 1 10 0 100 Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 4 6 8 10 12 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 1000 ID, Drain-to-Source Current (A) 1000 ISD, Reverse Drain Current (A) 2 QG, Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) 100 T J = 175°C 10 T J = 25°C 1 OPERATION IN THIS AREA LIMITED BY R DS(on) 100μsec 100 1msec 10msec 10 Tc = 25°C Tj = 175°C Single Pulse VGS = 0V 1 0.1 0.0 0.5 1.0 1.5 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 VDS= 24V VDS= 15V 4.0 www.irf.com © 2014 International Rectifier 2.0 0 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area Submit Datasheet Feedback June 29, 2014 IRLR8729PbF-1 60 2.5 VGS(th) , Gate threshold Voltage (V) Limited By Package ID, Drain Current (A) 50 40 30 20 10 2.0 1.5 ID = 25μA ID = 50μA ID = 100μA 1.0 0 0.5 25 50 75 100 125 150 175 -75 -50 -25 0 T C , Case Temperature (°C) 25 50 75 100 125 150 175 200 T J , Temperature ( °C ) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Threshold Voltage vs. Temperature Thermal Response ( Z thJC ) °C/W 10 1 D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 τJ R1 R1 τJ τ1 R2 R2 τC τ1 τ2 τ2 Ri (°C/W) τi (sec) 1.251 0.000513 1.481 0.004337 C i= τi/R i Ci= τi/Ri 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 τC 1E-005 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 29, 2014 IRLR8729PbF-1 DRIVER L VDS D.U.T RG + V - DD IAS 20V 0.01Ω tp VGS Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS A EAS , Single Pulse Avalanche Energy (mJ) 300 15V ID 4.4A 6.5A BOTTOM 20A TOP 250 200 150 100 50 0 tp 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy vs. Drain Current I AS V DS Fig 12b. Unclamped Inductive Waveforms V GS RG Current Regulator Same Type as D.U.T. RD D.U.T. + -V DD VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 50KΩ 12V Fig 14a. Switching Time Test Circuit .2μF .3μF D.U.T. + V - DS VDS 90% VGS 3mA IG ID Current Sampling Resistors Fig 13. Gate Charge Test Circuit 6 www.irf.com © 2014 International Rectifier 10% VGS td(on) tr t d(off) tf Fig 14b. Switching Time Waveforms Submit Datasheet Feedback June 29, 2014 IRLR8729PbF-1 Driver Gate Drive P.W. + D= Period P.W. Period VGS=10V D.U.T - + - Circuit Layout Considerations D.U.T. ISD Waveform • Low Stray Inductance • Ground Plane Reverse • Low Leakage Inductance Recovery Body Diode Forward Current Transformer Current + Current RG di/dt • • • • * D.U.T. VDS Waveform Re-Applied V Voltage + dv/dt controlled by RG DD Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test Diode Recovery dv/dt Body Diode VDD Forward Drop - Inductor Curent ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Id Vds Vgs Vgs(th) Qgodr Qgd Qgs2 Qgs1 Fig 16. Gate Charge Waveform 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 29, 2014 IRLR8729PbF-1 D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: T HIS IS AN IRF R120 WIT H ASS EMBLY LOT CODE 1234 ASS EMBLED ON WW 16, 2001 IN T HE AS SEMBLY LINE "A" PART NUMBER INT ERNAT IONAL RECTIFIER LOGO Note: "P" in ass embly line position indicates "Lead-Free" IRFR120 12 116A 34 AS S EMBLY LOT CODE DAT E CODE YEAR 1 = 2001 WEEK 16 LINE A "P" in ass embly line pos ition indicates "Lead-Free" qualification to the consumer-level OR INT ERNAT IONAL RECT IFIER LOGO PART NUMBER IRFR120 12 ASS EMBLY LOT CODE 34 DAT E CODE P = DESIGNAT ES LEAD-F REE PRODUCT (OPTIONAL) P = DESIGNAT ES LEAD-F REE PRODUCT QUALIF IED T O T HE CONS UMER LEVEL (OPT IONAL) YEAR 1 = 2001 WEEK 16 A = AS SEMBLY SIT E CODE Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 29, 2014 IRLR8729PbF-1 D-Pak (TO-252AA) Tape & Reel Information (Dimensions are shown in millimeters (inches) TR TRR TRL 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 29, 2014 IRLR8729PbF-1 † Qualification information Industrial Qualification level (per JEDE C JE S D47F Moisture Sensitivity Level RoHS compliant †† guidelines) MS L1 D-Pak Yes † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability †† Applicable version of JEDEC standard at the time of product release Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.37mH, RG = 25Ω, IAS = 20A. Pulse width ≤ 400μs; duty cycle ≤ 2%. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 50A. When mounted on 1" square PCB (FR-4 or G-10 Material).For recommended footprint and soldering techniques refer to application note #AN-994. Revision History Date 6/27/2014 Comment • Orderable table removed Tube option and add TRL option on page1. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 29, 2014