ON ENA2329 Dual n-channel power mosfet Datasheet

Ordering number : ENA2329A
EFC6612R
Power MOSFET
20V, 5.1mΩ, 23A, Dual N-Channel
http://onsemi.com
Features
 2.5V drive
 Protection diode in
 Halogen free compliance
 Common-drain type
 2KV ESD HBM
Applications
 Lithium-ion battery charging and discharging switch
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter
Symbol
Conditions
Value
Unit
Source to Source Voltage
VSSS
20
V
Gate to Source Voltage
VGSS
12
V
Source Current (DC)
IS
23
A
Source Current (Pulse)
ISP
PW100s, duty cycle1%
100
A
Total Dissipation
PT
When mounted on ceramic substrate (5000mm20.8mm)
2.5
W
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
55 to +150
C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Thermal Resistance Ratings
Parameter
Junction to Ambient
When mounted on ceramic substrate (5000mm20.8mm)
Symbol
RJA
Value
Unit
50
C/W
Electrical Characteristics at Ta  25C
Parameter
Symbol
Value
Conditions
min
Source to Source Breakdown Voltage
V(BR)SSS
IS=1mA, VGS=0V
Test Circuit 1
Zero-Gate Voltage Source Current
ISSS
VSS=20V, VGS=0V
Test Circuit 1
Gate to Source Leakage Current
IGSS
VGS=±8V, VSS=0V
Test Circuit 2
Gate Threshold Voltage
VGS(th)
VSS=10V, IS=1mA
Test Circuit 3
Forward Transconductance
gFS
VSS=10V, IS=3A
Test Circuit 4
typ
Unit
max
20
V
0.5
4.7
1
A
1
A
1.3
V
S
Continued on next page.
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
July, 2014
72314HK TC-00003135/42414TKIM No.A2329-1/6
EFC6612R
Continued from preceding page.
Value
Parameter
Symbol
Conditions
Unit
min
Static Source to Source On-State
Resistance
typ
max
RSS(on)1
IS=4.5A, VGS=4.5V
Test Circuit 5
3.3
4.2
5.1
m
RSS(on)2
IS=4.5A, VGS=4.0V
Test Circuit 5
3.4
4.3
5.2
m
RSS(on)3
IS=4.5A, VGS=3.8V
Test Circuit 5
3.5
4.4
5.3
m
RSS(on)4
IS=4.5A, VGS=3.1V
Test Circuit 5
3.9
4.9
6.4
m
RSS(on)5
IS=4.5A, VGS=2.5V
Test Circuit 5
4.4
5.6
7.9
m
Turn-ON Delay Time
td(on)
Rise Time
tr
Turn-OFF Delay Time
td(off)
Fall Time
tf
Total Gate Charge
Qg
VSS=10V, VGS=4.5V, IS=23A Test Circuit 7
Forward Source to Source Voltage
VF(S-S)
IS=4.5A, VGS=0V
VSS=10V, VGS=4.5V, IS=4.5A Test Circuit 6
Test Circuit 8
30
ns
640
ns
11.8
s
92
s
27
nC
0.76
1.2
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Ordering & Package Information
Device
Package
EFC6612R-TF
Packing Type: TF
EFCP
Shipping
note
5,000
pcs. / reel
Pb-Free
and
Halogen Free
Marking
Electrical Connection
No.A2329-2/6
EFC6612R
Test circuits are example of measuring FET1 side
When FET2 is measured, the position of FET1 and FET2 is switched.
No.A2329-3/6
EFC6612R
No.A2329-4/6
EFC6612R
No.A2329-5/6
EFC6612R
Package Dimensions
EFC6612R-TF
CSP6, 1.77×3.54 / EFCP3517-6DGH-020
CASE 568AL
ISSUE O
unit : mm
1: Source1
2: Gate1
3: Source1
4: Source2
5: Gate2
6: Source2
Note on usage : Since the EFC6612R is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States
and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without
further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose,
nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are
not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers,
employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was
negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all
applicable copyright laws and is not for resale in any manner.
PS No.A2329-6/6
Similar pages