DMPH6050SK3 Green 60V 175°C P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(ON) max ID max TC = +25°C 50mΩ @ VGS = -10V -23.6A 70mΩ @ VGS = -4.5V -20A V(BR)DSS -60V Features Rated to +175°C – Ideal for High Ambient Temperature Environments 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application Low Qg – Minimizes Switching Loss Low RDS(ON) – Minimizes On State Loss Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability An Automotive-Compliant Part is Available Under Separate Datasheet (DMPH6050SK3Q) Description and Applications Mechanical Data This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AECQ101, supported by a PPAP and is ideal for use in: Engine Management Systems Body Control Electronics DC-DC Converters Case: TO252 (DPAK) Case Material: Molded Plastic, ―Green‖ Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.315 grams (Approximate) D TO252 (DPAK) G S Pin Out Top View Top View Equivalent Circuit Ordering Information (Note 4) Part Number DMPH6050SK3-13 Notes: Case TO252 (DPAK) Packaging 2,500/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information TO252 (DPAK) H6050S YYWW DMPH6050SK3 Document number: DS37458 Rev. 3 - 2 = Manufacturer’s Marking H6050S = Product Type Marking Code YYWW = Date Code Marking YY = Last Digit of Year (ex: 15 = 2015) WW = Week Code (01 to 53) 1 of 7 www.diodes.com February 2016 © Diodes Incorporated DMPH6050SK3 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = -10V TC = +25°C TC = +70°C TA = +25°C TA = +70°C Steady State Steady State Value -60 ±20 -23.6 -19 ID A -7.2 -6.0 -40 -3.8 -25 31 ID Pulsed Drain Current (10μs pulse, duty cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 6) Avalanche Current (Note 7) L = 0.1mH Avalanche Energy (Note 7) L = 0.1mH Unit V V IDM IS IAS EAS A A A A mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Symbol PD RJA PD RJA RJC TJ, TSTG Steady State Steady State Value 1.9 80 3.8 39 3 -55 to +175 Unit W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -60 — — — — — — -1 ±100 V µA nA VGS = 0V, ID = -250μA VDS = -60V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) RDS(ON) -3 50 70 -1.2 V Static Drain-Source On-Resistance -1 — mΩ VDS = VGS, ID = -250μA VGS = -10V, ID = -7A VGS = -4.5V, ID = -7A VGS = 0V, IS = -1A Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V), Total Gate Charge (VGS = -10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: VSD — — — — -0.7 Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR — — — — — — — — — — — — — 1377 87 68 12 12 25 3.8 4.9 5.3 8.6 49.4 29.7 14.2 — — — — — — — — — — — — — pF pF pF Ω nC nC nC nC ns ns ns ns ns QRR — 7.9 — nC V Test Condition VDS = -30V, VGS = 0V, f = 1MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = -30V, ID = -5A VDS = -30V, VGS = -10V, RG = 3Ω, ID = -5A IF = -5A, di/dt = 100A/μs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. 7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMPH6050SK3 Document number: DS37458 Rev. 3 - 2 2 of 7 www.diodes.com February 2016 © Diodes Incorporated DMPH6050SK3 30.0 30 VGS = -10V V DS = -5.0V VGS = -4.5V VGS = -5.0V VGS = -4.0V 25 )A ( T 20 N E R R U C 15 N IA R D 10 ,D I ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25.0 20.0 15.0 VGS = -3.5V 10.0 VGS = -3.0V 5.0 TA= 175°C TA= 150°C TA= 125°C 5 VGS = -2.8V TA= 85°C TA= 25°C TA= -55°C 0 1 2 3 4 V DS, DRAIN -SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.090 0.080 0.070 VGS = -4.5V 0.060 0.050 VGS = -10V 0.040 0.030 0 5 10 15 20 25 ID, DRAIN SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0 5 30 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 5 0.18 0.16 ID = -7A 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0.1 0 2 4 6 8 10 12 14 16 18 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristics 20 2.2 VGS = -10V TA = 175C 0.09 TA = 125C 0.07 TA = 85C 0.06 0.05 TA = 25C 0.04 0.03 VGS = -10V ID = -7A 2 TA = 150C 0.08 TA = -55C 0.02 0.01 1 0.2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.0 1.8 1.6 VGS = -4.5V ID = -7A 1.4 1.2 1 0.8 0.6 0 5 10 15 20 25 ID, DRAIN SOURCE CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMPH6050SK3 Document number: DS37458 Rev. 3 - 2 30 3 of 7 www.diodes.com 0.4 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature February 2016 © Diodes Incorporated 0.11 2.6 )V ( E G A T L O V D L O H S E R H T E T A G , )H VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(on), DRAIN-SOURCE ON-RESISTANCE ( ) DMPH6050SK3 0.1 VGS = -4.5V ID = -7A 0.09 0.08 0.07 VGS = -10V ID = -7A 0.06 0.05 0.04 T (S G 0.03 V 2.4 2.2 -ID =1mA 2 -ID = 250µA 1.8 1.6 1.4 1.2 0.02 -50 1 -50 0 25 50 75 100 125 150 175 TA , AMBIENT TEMPERATURE (°C) Figure 8 Gate Threshold Variation vs. Ambient Temperature -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE ( C) Figure 7 On-Resistance Variation with Temperature 30 -25 100000 TA = 175°C 25 )A 10000 n ( T N E 1000 R R U C 100 E G A K A E 10 L ,S TA = 175°C TA = 85°C TA = 150°C TA = 125°C I TA = 25°C IDSS, LEAKAGE CURRENT (nA) IS, SOURCE CURRENT (A) )A ( T N 20 E R R U C 15 E C R U O 10 S ,S I 5 TA = 150°C TA = 125°C TA = 85°C TA = 25°C S D 1 TA = -55°C 0 0 0.1 0 0.3 0.6 0.9 1.2 1.5 VSD , SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 5 10 15 20 25 30 35 40 45 50 55 60 VDS , DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Drain-Source Leakage Current vs. Voltage 10000 10 VGS, GATE-SOURCE VOLTAGE (V) CT, JUNCTION CAPACITANCE (pF) f = 1MHz Ciss 1000 Coss 100 Crss 10 0 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11 Typical Junction Capacitance DMPH6050SK3 Document number: DS37458 Rev. 3 - 2 40 4 of 7 www.diodes.com 8 6 VDS = -30V ID = -5A 4 2 0 0 4 8 12 16 20 24 Qg, TOTAL GATE CHARGE (nC) Figure 12 Gate-Charge Characteristics 28 February 2016 © Diodes Incorporated DMPH6050SK3 100 PW = 10µs RDS(ON) Limited ID, DRAIN CURRENT (A) ) A ( T 10 N E R R U C N I A R D 1 ,D I 0.1 PW = 1s PW = 100ms PW = 10ms PW = 1ms PW = 100µs PW = 1µs TJ(max) = 150°C TA = 25°C VGS = -10V Single Pulse DUT on 1 * MRP Board 1 10 VDS , DRAIN-SOURCE VOLTAGE (V) Figure 13 SOA, Safe Operation Area r(t), TRANSIENT THERMAL RESISTANCE 1 100 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RJA(t) = r(t) * RJA RJA = 2.8° 2.8癈 /W C/W JA = Duty Cycle, D = t1/ t2 Single Pulse 0.001 1E-06 DMPH6050SK3 Document number: DS37458 Rev. 3 - 2 1E-05 1E-04 0.001 0.01 0.1 t1, PULSE DURATION TIMES (sec) Figure 14 Transient Thermal Resistance 5 of 7 www.diodes.com 1 10 February 2016 © Diodes Incorporated DMPH6050SK3 Package Outline Dimensions Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. TO252 (DPAK) E A b3 7° ± 1° c L3 D A2 L4 e TO252 (DPAK) Dim Min Max Typ A 2.19 2.39 2.29 A1 0.00 0.13 0.08 A2 0.97 1.17 1.07 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c 0.45 0.58 0.531 D 6.00 6.20 6.10 D1 5.21 e 2.286 E 6.45 6.70 6.58 E1 4.32 H 9.40 10.41 9.91 L 1.40 1.78 1.59 L3 0.88 1.27 1.08 L4 0.64 1.02 0.83 a 0° 10° All Dimensions in mm H b(3x) b2(2x) Gauge Plane 0.508 D1 E1 Seating Plane a L A1 2.74REF Suggested Pad Layout Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. TO252 (DPAK) X1 Dimensions C X X1 Y Y1 Y2 Y1 Y2 C Value (in mm) 4.572 1.060 5.632 2.600 5.700 10.700 Y X DMPH6050SK3 Document number: DS37458 Rev. 3 - 2 6 of 7 www.diodes.com February 2016 © Diodes Incorporated DMPH6050SK3 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2016, Diodes Incorporated www.diodes.com DMPH6050SK3 Document number: DS37458 Rev. 3 - 2 7 of 7 www.diodes.com February 2016 © Diodes Incorporated