AP92T03GS/P-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
▼ Simple Drive Requirement
▼ Lower On-resistance
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
BVDSS
30V
RDS(ON)
4mΩ
ID
G
80A
S
Description
AP92T03 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and
fast switching performance. It provides the designer with an extreme
efficient device for use in a wide range of power applications.
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited for
high current application due to the low connection resistance. The
through-hole version (AP92T03GP) are available for low-profile
applications.
G
G
D
D
S
TO-263(S)
TO-220(P)
S
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
+20
V
80
A
50
A
3
ID@TC=25℃
Drain Current
ID@TC=100℃
Drain Current
1
IDM
Pulsed Drain Current
320
A
PD@TC=25℃
Total Power Dissipation
89
W
Linear Derating Factor
0.71
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Parameter
Maximum Thermal Resistance, Junction-case
4
Value
Units
1.4
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
40
℃/W
Rthj-a
Maixmum Thermal Resistance, Junction-ambient
62
℃/W
Data and specifications subject to change without notice
1
201501154
AP92T03GS/P-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
30
-
-
V
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=40A
-
-
4
mΩ
VGS=4.5V, ID=30A
-
-
5.2
mΩ
0.5
-
2
V
VDS=10V, ID=40A
-
100
-
S
VDS=24V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=125 C) VDS=24V ,VGS=0V
-
-
250
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=40A
-
45
72
nC
Qgs
Gate-Source Charge
VDS=20V
-
6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
26
-
nC
td(on)
Turn-on Delay Time
VDS=15V
-
12
-
ns
tr
Rise Time
ID=40A
-
63
-
ns
td(off)
Turn-off Delay Time
RG=1Ω,VGS=10V
-
40
-
ns
tf
Fall Time
RD=0.375Ω
-
7
-
ns
Ciss
Input Capacitance
VGS=0V
-
3500 5600
pF
Coss
Output Capacitance
VDS=25V
-
930
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
770
-
pF
Min.
Typ.
IS=40A, VGS=0V
-
-
1.3
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
IDSS
Drain-Source Leakage Current
o
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=20A, VGS=0V,
-
39
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
42
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 80A .
4.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP92T03GS/P-HF
280
240
o
200
160
120
V G = 3.0 V
T C = 150 C
10V
7.0V
5.0V
4.5V
200
ID , Drain Current (A)
T C = 25 o C
240
ID , Drain Current (A)
10 V
7.0 V
5.0 V
4.5 V
160
120
V G = 3 .0V
80
80
40
40
0
0
0
2
4
8
8.0V
6
0
2
4
6
8
10
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
10
2.4
I D =30A
I D =40A
V G =10V
T C =25 o C
Normalized RDS(ON)
2.0
RDS(ON) (mΩ )
8
6
1.6
1.2
4
0.8
0.4
2
2
4
6
8
10
25
50
75
100
125
150
o
V GS Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
6.0
40
5.0
30
RDS(ON) (mΩ )
T j =25 o C
IS(A)
T j =150 o C
20
10
V GS =4.5V
4.0
V GS =10V
3.0
0
2.0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
0
20
40
60
80
100
I D , Drain Current (A)
Fig 6. On-Resistance vs.
Drain Current
3
AP92T03GS/P-HF
f=1.0MHz
14
10000
C iss
V DS = 12 V
V DS = 16 V
V DS = 20 V
10
C (pF)
VGS , Gate to Source Voltage (V)
I D = 40 A
12
8
C oss
C rss
1000
6
4
2
0
100
0
20
40
60
80
100
120
1
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (R thjc)
1000
100us
ID (A)
100
1ms
10ms
100ms
1s
DC
10
T C =25 o C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
Single Pulse
0.01
1
0.1
1
10
100
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
280
V DS =5V
VG
ID , Drain Current (A)
240
QG
200
o
o
T j =25 C
4.5V
T j =150 C
160
QGS
QGD
120
80
40
Charge
Q
0
0
1
2
3
4
5
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
AP92T03GS/P-HF
MARKING INFORMATION
TO-263
92T03GS
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
TO-220
92T03GP
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5