MA-COM MA4P High power pin diode Datasheet

MA4P MELF & HIPAX Series
High Power PIN Diodes
V16
Features

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



Package Styles
High Power Handling
Low Loss / Low Distortion
Voltage Ratings up to 1000 Volts
Passivated Chip for Low Leakage Current
Low Theta (θ) Due to Full Face Chip Bonding
Leadless Low Inductance MELF Packages
Various Package Options
Available as Chips
Fully RoHS Compliant
Non-Magnetic Packages Available for MRI
Description
The MELF and HIPAX PIN diode series are
designed for usage in switch and attenuator
applications requiring high power handling and low
distortion. These diodes incorporate a fully
passivated PIN diode chip resulting in an extremely
low reverse bias leakage current. The
semiconductor technology utilized in the MELF and
HIPAX families draws on MACOM ’s substantial
experience in PIN diode design and wafer
fabrication. The result is a device which has a thick
I-region and long carrier lifetime while maintaining
low series resistance and capacitance values. The
chips of the MELF and HIPAX PIN diodes are
enclosed in a rugged ceramic package and is full
face bonded to metal pins on both the anode and
cathode. The result is a low loss PIN diode with low
thermal resistance due to symmetrical thermal
paths. The parts are offered in either magnetic or
non-magnetic, HIPAX (axial leaded) or MELF (Metal
Electrode Leadless Faced) surface mount packages
for MRI applications. The MELF is a rectangular
SMQ, package which is designed for high volume
tape and reel assembly. This easy to use package
design makes automatic pick and place, indexing
and assembly, extremely easy. The parallel flat surfaces are suitable for most key jaw or vacuum pickup techniques. All of the solderable surfaces are tin
plated and compatible with industry standard reflow
and vapor phase soldering processes. See Application Note M538 for a typical solder reflow profile.
Many of MACOM’s HIPAX PIN diodes are also
available as chips. Please consult the “Silicon PIN
Chip Datasheet” for availability and specifications.
401 & 402
1072 & 1091
Applications
HIPAX PIN diodes are designed for use in a wide
variety of switch and attenuator applications from
HF through UHF frequencies and at power levels
above 1 kW, CW. The internal chip as well as each
diode assembly has been comprehensively tested
and characterized to ensure predictable and
repeatable performance.
Design Recommendations
 Low Distortion Attenuators
MA4P4301B
 Surface Mount Switches
MA4P7101F
 Cellular Radio Antenna Switches
MA4P1200, MA4P1250
Absolute Maximum Ratings
TA = +25°C (Unless Otherwise Noted)1
Parameter
Absolute Maximum
DC Reverse Voltage (VR)
(See Tables)
Operating Chip Junction
Temperature
-55°C to +175°C
Storage Temperature
-55°C to +200°C
Installation Temperature
+280°C for 30 Seconds
ESD
Class 1A, HBM
Notes
1. Operation of this device above any one of these
parameters may cause permanent damage.
1
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MA4P MELF & HIPAX Series
High Power PIN Diodes
V16
MA4P1000 Series Electrical Specifications @ TA = +25°C
Part #
CT
Total Capacitance
pF
VR
Reverse Voltage
VDC
RS
Series Resistance
W
RP
Parallel Resistance
kW
VR = 50 V, 1 MHz
IR = 10 mA
IF = 50 mA, 100 MHz
VR = 0 V, 100 MHz
(NM Indicates NonMagnetic)
Typ.
Max.
MA4P1200 - 401T
1.2
1.5
MA4P1200NM - 401T
1.2
1.5
MA4P1250 -1072T
0.8
1.2
MA4P1250NM -1072T
0.8
1.2
MA4P1450 -1091T
1.8
2.5
Part #
Min.
Max.
Typ.
Max.
Min.
50
100
0.5
0.75
5
VF
Forward Voltage
(Max. I Forward @ 1V ≤
TL
Carrier Lifetime
IF = 50 mA
IF = 10 mA, IR = 6 mA
(NM Indicates NonMagnetic)
Forward Bias
Harmonic Distortion
R(2a/a) * R(3a/a)
Reverse Bias
Harmonic Distortion
R(2a/a) – R(3a/a)
PIN = 30 W, 100 MHz PIN = 0 dBm, VR = 0 V,
IF = 50 mA
100 MHz
Typ.
Max.
Min.
Typ.
Min.
Typ.
Min.
Typ.
0.85
1.0
2
8
80
90
60
70
MA4P1200 - 401T
MA4P1200NM - 401T
MA4P1250 -1072T
MA4P1250NM-1072T
MA4P1450 -1091T
*Notes:
1.) “NM” in the base part number signifies non-magnetic package.
2.) “T” suffix denotes tape and reel
Power Dissipation and Thermal Resistance Ratings @ TA = +25°C
Package
Style
B
Axial Lead
F
MELF
Condition
MA4P1200(NM)-401T
PDISS
No Heatsink
1.5 W
Lead Length 1/4"
5.5 W
θJC
15°C/W
MA4P1250(NM)-1072T
MA4P1450-1091T
PDISS
θJC
PDISS
θJC
—
—
—
—
—
—
—
—
No Heatsink
—
6W
Infinite Heatsink
—
18 W
15°C/W
10 W
30 W
5°C/W
2
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MA4P MELF & HIPAX Series
High Power PIN Diodes
V16
Typical Performance Curves @ TA = +25°C
MA4P1200 Series
Capacitance vs. Frequency & Reverse Bias
Capacitance
Series Resistance
Series Resistance @ 100 MHz vs. Forward Current
Ω
pF
MHz
Frequency
Forward Current
Heatsink Temperature vs. Max. Power Dissipation
Ω
MHz
Frequency
Watts
Maximum Power Dissipation
Parallel Resistance
Parallel Resistance vs. Frequency & Reverse Bias
°C
Heatsink Temperature
3
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MA4P MELF & HIPAX Series
High Power PIN Diodes
V16
Typical Performance Curves @ TA = +25°C
MA4P1250 Series
Capacitance vs. Frequency & Reverse Bias
Capacitance
Series Resistance
Series Resistance @ 100 MHz vs. Forward Current
Ω
MHz
Frequency
Forward Current
Parallel Resistance vs. Frequency & Reverse Bias
Carrier Lifetime vs. Forward Bias Current
Carrier Lifetime
Parallel Resistance
pF
Ω
MHz
Frequency
Forward Current
4
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MA4P MELF & HIPAX Series
High Power PIN Diodes
V16
Typical Performance Curves @ TA = +25°C
MA4P1450 Series
Capacitance vs. Frequency and Reverse Bias
Capacitance
Series Resistance
Series Resistance @ 100 MHz vs. Forward Current
Ω
pF
MHz
Forward Current
Frequency
Parallel Resistance
Parallel Resistance vs. Frequency and Reverse Bias
Ω
MHz
Frequency
5
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MA4P MELF & HIPAX Series
High Power PIN Diodes
V16
MA4P4000 - MA4P7100 Series Electrical Specifications @ TA = +25°C
Parameter
Symbol
Condition
MA4P4000
Series
MA4P4300
Series
MA4P7000
Series
MA4P7100
Series
Maximum Series Resistance
RS
IF = 100 mA
0.5 Ω
1.0 Ω
0.9 Ω
0.5 Ω
Maximum Total Capacitance
CT
VR = 100 V
2.2 pF
2.0 pF
0.7 pF
1.0 pF
Minimum Parallel Resistance
RP
VR = 100 V
20 kΩ
50 kΩ
200 kΩ
100 kΩ
Minimum Carrier Lifetime
TL
IF = 10 mA
20 µs
15 µs
5 µs
2.5 µs
Maximum Forward Voltage
VF
IF = 100 mA
1.0 V
1.2 V
1.0 V
1.0 V
Maximum Reverse Current
IR
At max. rated voltage
1 µA
1 µA
1 µA
1 µA
Nominal I-Region Width
μ
—
175 µm
300 µm
175 µm
100 µm
Maximum Reverse Voltage Rating ( VR )
Maximum Reverse
Voltage Rating
MA4P4000
Series
MA4P4300
Series
MA4P7000
Series
MA4P7100
Series
100 V
MA4P4001B-402
MA4P4001BNM-402
MA4P4001F-1091T
MA4P4301B-402
MA4P4301F-1091T
MA4P7001F-1072T
MA4P7101B-401T
MA4P7101F-1072T
200 V
MA4P4002B-402
MA4P4002F-1091T
MA4P4302B-402
MA4P7002B-401T
MA4P7002F-1072T
MA4P7102B-401T
MA4P7102F-1072T
400 V
—
—
—
MA4P7104B-401T
MA4P7104F-1072T
600 V
MA4P4006F-1091T
MA4P4006B-402
—
MA4P7006B-401T
MA4P7006F-1072T
—
*Notes:
1.) “NM” in the base part number signifies non-magnetic package.
2.) “T” suffix denotes tape and reel.
Package
Style
Condition
MA4P4000
Series
MA4P4300
Series
MA4P7000
Series
MA4P7100
Series
PDISS
θJC
PDISS
θJC
PDISS
θJC
PDISS
θJC
1/4” Lead Length
12 W
12.5°C/W
10 W
15°C/W
5W
30°C/W
6W
25°C/W
No Heatsink
2.5 W
—
2.5 W
—
1.5 W
—
1.5 W
—
F
MELF
Infinite Heatsink
7.5 W
20°C/W
5W
30°C/W
10 W
15°C/W
11.5 W
13°C/W
Both B and F
Single 1 µs pulse
100 kW
—
100 kW
—
15 kW
—
15 kW
—
Both B and F
Single 100 µs
5 kW
0.03°C/W
5 kW
0.03°C/W
300 W
0.5°C/W
300 W
0.5°C/W
B
Axial Leaded
6
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For further information and support please visit:
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MA4P MELF & HIPAX Series
High Power PIN Diodes
V16
Typical Performance Curves @ TAMB = +25°C
MA4P4000,MA4P4300, MA4P7000, MA4P7100 Series
Series Resistance at 100 MHz vs. Forward Current
MA4P7000, MA4P7100 Series
Series Resistance
Series Resistance
Series Resistance at 100 MHz vs. Forward Current
MA4P4000, MA4P4300 Series
Ω
Ω
Forward Current
Forward Current
Carrier Lifetime vs. Forward Bias Current
MA4P4000, MA4P4300, MA4P7000 & MA4P7100 Series
Carrier Lifetime
Thermal Resistance
Thermal Resistance vs. Pulse Width
MA4P4000, MA4P4300, MA4P7000 & MA4P7100 Series
°C/W
µS
Forward Current
Pulse Width
7
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Visit www.macom.com for additional data sheets and product information.
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MA4P MELF & HIPAX Series
High Power PIN Diodes
V16
Typical Performance Curves @ TAMB = +25°C
MA4P4000, MA4P4300, MA4P7000, MA4P7100 Series
Capacitance vs. Frequency & Reverse Bias
MA4P4300 Series
Capacitance
Capacitance
Capacitance vs. Frequency & Reverse Bias
MA4P4000 Series
pF
pF
MHz
MHz
Frequency
Frequency
Capacitance vs. Frequency & Reverse Bias
MA4P7100 Series
Capacitance
Capacitance
Capacitance vs. Frequency & Reverse Bias
MA4P7000 Series
pF
pF
MHz
MHz
Frequency
Frequency
8
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MA4P MELF & HIPAX Series
High Power PIN Diodes
V16
Typical Performance Curves @ TAMB = +25°C
MA4P4000, MA4P4300, MA4P7000, MA4P7100 Series
Parallel Resistance vs. Reverse Bias & Frequency
MA4P4300 Series
Parallel Resistance
Parallel Resistance
Parallel Resistance vs. Reverse Bias & Frequency
MA4P4000 Series
Ω
Ω
Volts
Reverse Bias
Volts
Reverse Bias
Parallel Resistance vs. Reverse Bias & Frequency
MA4P7100 Series
Parallel Resistance
Parallel Resistance
Parallel Resistance vs. Reverse Bias & Frequency
MA4P7000 Series
Ω
Volts
Reverse Bias
Ω
Volts
Reverse Bias
9
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MA4P MELF & HIPAX Series
High Power PIN Diodes
V16
Case Styles
401 Axial Leaded Packages
402 Axial Leaded Packages
Cathode Band
Cathode Band
B
C
Min.
Max.
Min.
Max.
A
—
0.130
—
3.30
B
—
0.090
—
2.29
C 0.975
24.77
—
D 0.027 0.029
0.69
0.74
INCHES
1091 MELF Surface Mount Packages
100 pcs/bag
Min.
MAX
Min.
Max.
A
—
0.230
—
5.84
B
—
0.140
—
3.56
C
0.975
24.77
—
D
0.039 0.041
0.99
1.04
MA4P4001B-402
MA4P4001BNM-402
MA4P4002B-402
MA4P4006B-402
MA4P4301B-402
MA4P4302B-402
INCHES
Cathode
B
A
B
A
Solderable
Surfaces
A
Solderable
Surfaces
C
A
C
A
MA4P1450-1091T
MA4P4001F-1091T
MA4P4002F-1091T
MA4P4006F-1091T
MA4P4301F-1091T
1072 Package
(tape and reel only)
Min. Max.
1500 or 5000 pcs/reel
specify when ordering
Min.
A
0.138 0.155 3.51
3.94
B
0.181 0.191 4.57
4.85
C
0.011 0.026 0.279 0.660
INCHES
Max.
MA4P1250-1072T
MA4P1250NM-1072T
MA4P7001F-1072T
MA4P7002F-1072T
MA4P7006F-1072T
MA4P7101F-1072T
MA4P7104F-1072T
Dimension
500 pcs/reel
MM
Dimension
1091 Package
(tape and reel only)
MM
1072 MELF Surface Mount Packages
Cathode
A
C
A
402 Package
(bulk only)
MM
D
Dimension
MA4P1200-401T
MA4P1200NM-401T
MA4P7002B-401T
MA4P7006B-401T
MA4P7101B-401T
MA4P7102B-401T
MA4P7104B-401T
Dimension
500 or 1000 pcs/reel
specify when ordering
C
C
A
401 Package
(tape and reel only)
B
D
INCHES
Min.
Max.
MM
Min.
A 0.080 0.095 2.032 2.413
B 0.115 0.125 2.921 3.175
C 0.008 0.023 0.203 0.584
10
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Max.
MA4P MELF & HIPAX Series
High Power PIN Diodes
V16
MELF Assembly Recommendations
Devices may be soldered using standard 60Sn/40Pb or RoHS compliant solders. Axial leads and solderable
surfaces of MELF devices are tin plated 50 μm thick to ensure an optimum connection.
For recommended Sn/Pb and RoHS soldering profiles See Application Note M538 on the MACOM website.
Circuit Pad Layout for MELF Diodes
MELF Internal Construction
Package Style
Dimension
1072
1091
inches
mm
inches
mm
A
0.093
2.36
0.150
3.81
B
0.050
1.27
0.050
1.27
C
0.060
1.52
0.100
2.54
A
B
C
B
Ordering Information
MELF diodes are available in tape and reel in quantities as shown in table below
Package Style
Quantity (7” Reel)
Bulk Devices Per Bag
1072T
1500 or 5000
N/A
1091T
500
N/A
Tape and reel information can be found in application note M513 the MACOM website.
11
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MA4P MELF & HIPAX Series
High Power PIN Diodes
V16
Axial Leaded HIPAX Assembly Recommendations
Bends on case styles 401 and 402, axially leaded devices, must be made while holding the lead firm and forming
the bend no closer than .060 inches from the body of the part. Bending the lead <0.060 inches from the body of
the part is not recommended and may cause internal damage to the chip. Appropriate fixturing should be used.
Devices may be soldered using standard 60Sn/40Pb or any RoHS compliant solders. Axial leads are tin plated
50 μm thick to ensure an optimum connection.
For recommended Sn/Pb and RoHS soldering profiles see Application Note M538 on the MACOM website.
Case Style 401 & 402
Minimum Bend Distance
Case Style 401 & 402
Internal Construction
Cathode Band
Passivated Chip
.060” Min
.060” Min
Ordering Information
Axial leaded diodes are available in tape and reel or bulk in quantities shown in the table below
Package Style
Quantity Per Reel
Bulk Devices Per Bag
401T
500 or 1000 (specify qty. when ordering)
N/A
N/A
100
402
Environmental Ratings
HIPAX PIN diodes are designed to meet most environmental and electrical requirements and may be ordered
screened to MIL-STD-750 specifications as described in the table below.
TEST
METHOD
DESCRIPTION/ CONDITIONS
Moisture Resistance
High Temperature Storage
HTRB
Temperature Shock
Fine Leak
Constant Acceleration
Solderability
Tension1
Lead Fatigue1
1021
1031
1038
1051
1071 Cond. H
2006
2026
2036.3 Cond. A
2036.3 Cond. E
85°C, 85% Relative Humidity, 168 hrs
+175°C , 250 Hours
80% of rated VR, 50°C, 96 Hours
-65°C to +175°C, 20 Cycles
1 x 10-7 CC/Sec
20,000 G’s
IPC/JDEC J-STD-02
2 Lbs., 30 Seconds
3 Cycles, 8 oz., 90°,
Note:
1) Test applicable to HIPAX axially leaded devices only.
12
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MA4P MELF & HIPAX Series
High Power PIN Diodes
V16
MACOM Technology Solutions Inc. All rights reserved.
Information in this document is provided in connection with MACOM Technology Solutions Inc ("MACOM")
products. These materials are provided by MACOM as a service to its customers and may be used for
informational purposes only. Except as provided in MACOM's Terms and Conditions of Sale for such products or
in any separate agreement related to this document, MACOM assumes no liability whatsoever. MACOM
assumes no responsibility for errors or omissions in these materials. MACOM may make changes to
specifications and product descriptions at any time, without notice. MACOM makes no commitment to update
the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future
changes to its specifications and product descriptions. No license, express or implied, by estoppels or otherwise,
to any intellectual property rights is granted by this document.
THESE MATERIALS ARE PROVIDED "AS IS" WITHOUT WARRANTY OF ANY KIND, EITHER EXPRESS OR
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13
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