DMP3028LK3Q 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS -30V Features RDS(ON) MAX ID MAX TC = +25°C 25mΩ @ VGS = -10V -27A 38mΩ @ VGS = -4.5V -22A 100% Unclamped Inductive Switch (UIS) Test In Production Low On-Resistance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description and Applications Mechanical Data This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: Case: TO252 (DPAK) Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3 Backlighting DC-DC Converters Power Management Functions Weight: 0.33 grams (Approximate) D D TO252 (DPAK) G D G S Top View Pin-Out Top View S Equivalent Circuit Ordering Information (Note 5) Product DMP3028LK3Q-13 Notes: Case TO252 (DPAK) Packaging 2,500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information = Manufacturer’s Marking P3028L= Product Type Marking Code . YYWW = Date Code Marking YY = Year (ex: 16 = 2016) WW = Week (01 to 53) P3028L YYWW DMP3028LK3Q Document Number DS39156 Rev.1 - 2 1 of 7 www.diodes.com August 2016 © Diodes Incorporated DMP3028LK3Q Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 7) VGS = -10V VDSS Value -30 Unit V VGSS ±20 V Steady State TC = +25°C TC = +70°C ID -27 -22 A t<10s TA = +25°C TA = +70°C ID -11 -8.6 A Maximum Body Diode Continuous Current IS IDM -2.5 A Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) -40 A Avalanche Current (Note 8) L = 0.1mH IAS -22 A Avalanche Energy (Note 8) L = 0.1mH EAS 24 mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol TA = +25°C Total Power Dissipation (Note 6) PD TA = +70°C Steady state t<10s TA = +25°C Thermal Resistance, Junction to Ambient (Note 6) Total Power Dissipation (Note 7) PD Operating and Storage Temperature Range Electrical Characteristics W °C/W W RθJC 1.8 45 29 4.5 TJ, TSTG -55 to +150 RθJA Thermal Resistance, Junction to Case (Note 7) Unit 1.0 77 34 2.8 RθJA TA = +70°C Steady state t<10s Thermal Resistance, Junction to Ambient (Note 7) Value 1.6 °C/W °C (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage Symbol Min Typ Max Unit Test Condition BVDSS -30 — — V VGS = 0V, ID = -250µA IDSS — — -1 µA VDS = -30V, VGS = 0V Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 9) Gate Threshold Voltage IGSS — — 100 nA VGS = 20V, VDS = 0V VGS(TH) -1 VDS = VGS, ID = -250µA RDS(ON) — -2.4 25 V Static Drain-Source On-Resistance — 20 29 38 mΩ VGS = -10V, ID = -7A VGS = -4.5V, ID = -6.2A Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance VSD — -0.7 -1.2 V Ciss — 1241 — pF Output Capacitance Coss — 147 — pF Reverse Transfer Capacitance Crss — 110 — pF Gate Resistance RG — — Total Gate Charge (VGS = -10V) Total Gate Charge (VGS = -4.5V) Gate-Source Charge Qg Qg — — 15 22 Ω nC 11 — — Qgs — 3.5 — nC Qgd — — — — — 4.7 9.7 17.1 60.5 40.4 — — — — — nC ns ns ns ns Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: tD(ON) tR tD(OFF) tF nC VGS = 0V, IS = -2.1A VDS = -15V, VGS = 0V f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = -15V, ID = -7A VGS = -10V, VDD = -15V, RGEN = 6Ω ID = -7A 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 8. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. DMP3028LK3Q Document Number DS39156 Rev.1 - 2 2 of 7 www.diodes.com August 2016 © Diodes Incorporated DMP3028LK3Q 20 20 VGS = -10V VGS = -3.5V VDS = -5.0V VGS = -4.5V 15 -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) VGS = -4.0V VGS = -5.0V VGS = -3.0V 10 5 15 10 5 TA = 85C TA = 150C TA = 125C VGS = -2.5V TA = 25C T A = -55C 0 1 2 3 4 -VDS, DRAIN -SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 5 0.05 ) ( E C N A T S IS E R -N O E C R U O S -N IA R D , )N 0.04 VGS = -4.5V 0.03 VGS = -10V 0.02 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 0.01 1 2 3 4 -V GS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 5 0.05 VGS = -4.5V TA = 125 C 0.04 TA = 150C TA = 85°C TA = 25°C 0.03 TA = -55°C 0.02 0.01 O (S D 0 R 0 5 10 15 20 25 -ID, DRAIN SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 30 0 0 2 4 6 8 10 12 14 16 18 -ID, DRAIN SOURCE CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 20 0.05 R DS(on), DRAIN-SOURCE ON-RESISTANCE () 1.8 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 0 VGS = -10V ID = -10A 1.6 1.4 VGS = -5V ID = -5A 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 5 On-Resistance Variation with Temperature DMP3028LK3Q Document Number DS39156 Rev.1 - 2 3 of 7 www.diodes.com 0.04 VGS = -5.0V ID = -5.0A 0.03 VGS = -10V ID = -10A 0.02 0.01 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature August 2016 © Diodes Incorporated DMP3028LK3Q 20 VGS(TH), GATE THRESHOLD VOLTAGE (V) 3 )V ( E G A T L O V D L O H S E R H T E T A G , )H -IS, SOURCE CURRENT (A) 2.5 2 -ID =1mA -ID= 250µA 1.5 1 15 10 TA= 150C TA= 125C 5 TA= 85C TA= 25C 0.5 T (S G TA= -55C V 0 0 -50 0 -25 0 25 50 75 100 125 150 TA , AMBIENT TEMPERATURE (°C) Figure 7 Gate Threshold Variation vs. Ambient Temperature 10 10000 TA = 150°C 9 -VGS, GATE-SOURCE VOLTAGE (V) -I -IDSS, LEAKAGE CURRENT (nA) )A n 1000 ( T N E R R 100 U C E G A K 10 A E L ,S S D 0.2 0.4 0.6 0.8 1 1.2 -V SD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current TA = 125°C TA = 85°C TA = 25°C 1 8 7 6 VDS = -15V ID = -7A 5 4 3 2 1 0.1 0 0 5 10 15 20 25 30 -VDS , DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Drain-Source Leakage Current vs. Voltage 10000 0 5 10 15 20 Qg , TOTAL GATE CHARGE (nC) Figure 10 Gate-Charge Characteristics 25 100 )A ( T N E R R U C N IA R D ,D I -ID, DRAIN CURRENT (A) CT, JUNCTION CAPACITANCE (pF) R DS(ON) Limited Ciss 1000 100 10 DC PW = 10s 1 PW = 1s PW = 100ms PW = 10ms 0.1 TJ(max) = 150°C PW = 1ms PW = 100µs TA = 25°C 10 VGS = -10V Single Pulse 0.01 DUT on 1 * MRP Board 0 5 10 15 20 25 -V DS, DRAIN-SOURCE VOLTAGE (V) Figure 11 Typical Junction Capacitance DMP3028LK3Q Document Number DS39156 Rev.1 - 2 30 4 of 7 www.diodes.com 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 August 2016 © Diodes Incorporated DMP3028LK3Q r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RR = r(t)* RθJC θJC(t)(t) = r(t) *R thjc 0.001 0.000001 thjc o RθJC = 4 C/W Single Pulse Rthjc = 4°C/W Duty Cycle, D =Dt1/t2 Duty Cycle, = t1/ t2 0.00001 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance DMP3028LK3Q Document Number DS39156 Rev.1 - 2 5 of 7 www.diodes.com August 2016 © Diodes Incorporated DMP3028LK3Q Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. TO252 (DPAK) E A b3 7° ± 1° c L3 D A2 L4 e H b(3x) b2(2x) Gauge Plane 0.508 D1 E1 Seating Plane a L A1 2.74REF TO252 (DPAK) Dim Min Max Typ A 2.19 2.39 2.29 A1 0.00 0.13 0.08 A2 0.97 1.17 1.07 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c 0.45 0.58 0.531 D 6.00 6.20 6.10 D1 5.21 e 2.286 E 6.45 6.70 6.58 E1 4.32 H 9.40 10.41 9.91 L 1.40 1.78 1.59 L3 0.88 1.27 1.08 L4 0.64 1.02 0.83 a 0° 10° All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. TO252 (DPAK) X1 Y1 Dimensions C X X1 Y Y1 Y2 Y2 C Value (in mm) 4.572 1.060 5.632 2.600 5.700 10.700 Y X DMP3028LK3Q Document Number DS39156 Rev.1 - 2 6 of 7 www.diodes.com August 2016 © Diodes Incorporated DMP3028LK3Q IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2016, Diodes Incorporated www.diodes.com DMP3028LK3Q Document Number DS39156 Rev.1 - 2 7 of 7 www.diodes.com August 2016 © Diodes Incorporated