First Sensor APD Data Sheet Part Description AD800-9 TO Order # 501196 Version 19-01-12 Features Description Application RoHS • APD with 0.5 mm² active area • Slow multiplication curve • QE > 80% @ 750 nm-910 nm • Fast rise time, low noise • Optimum gain: 50-60 Circular active area APD chip with NIR enhanced sensitivity. Metal can type hermetic TO52 package with clear glass window. • Laser range finder 2002/95/EC Absolute maximum ratings Spectral response (M = 100) Parameter Storage temp Operating temp Gain (IP0 = 1 nA) Peak DC current Min -55 -40 200 Max 125 100 Unit °C °C 70 60 50 0.25 Responsivity (A/W) Symbol TSTG TOP Mmax IPEAK • High speed photometry • High speed optical communications • Medical equipment mA Schematic PIN 1 PIN 4 40 30 20 10 0 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 Wavelength (nm) PIN 3 Electro-optical characteristics @ 23 °C Symbol ID C tR VBR Characteristic Active area Active area Dark current Capacitance Responsivity Rise time Cut-off frequency Breakdown voltage Temperature coefficiant Excess noise factor Excess noise index European, International Sales: Test Condition M = 100 M = 100 M = 100; λ = 905 nm M = 100; λ = 905 nm; RL = 50 Ω -3dB IR = 2 µA, VBR - binning available Change of VBR with temperature M = 100 M = 100 First Sensor AG Peter-Behrens-Strasse 15 12459 Berlin Germany Phone: +49-30-6399-2399 Fax: +49-30-6399-23752 E-Mail: [email protected] USA: Min Typ diameter 800 0.5 2.0 2.0 52 58 0.9 0.5 160 200 1.25 2.5 0.2 Max 6.0 60 240 1.55 Unit µm mm² nA pF A/W ns GHz V V/K First Sensor, Inc. 5700 Corsa Avenue #105 Westlake Village CA 91362 USA Phone: +1-818-706-3400 Fax: +1-818-889-7053 E-Mail: [email protected] First Sensor APD Data Sheet Part Description AD800-9 TO Order # 501196 Version 19-01-12 Quantum efficiency (23 °C) Capacitance as fct of reverse bias (23 °C) 80 100 70 60 Capacitance (pF) Quantum efficiency (%) 80 60 40 20 50 40 30 20 10 0 0 400 500 600 700 800 900 1000 1100 0 10 20 Multiplication as fct of bias (23 °C) 40 50 60 Dark current as fct of bias (23 °C) 1,0E-07 Dark current (A) 1.000 100 Multiplication 30 Reverse bias (V) Wavelength (nm) 1,0E-08 10 1,0E-09 1 1,0E-10 20 40 60 80 100 120 140 160 180 200 220 20 40 60 80 100 120 140 160 180 200 220 Reverse bias (V) Reverse bias (V) Application hints: Bias supply voltage Current limiting resistor APD min. 0,1 µF, closest to APD • Current should be limited by a protecting resistor or current limiting - IC inside the power supply • For low light level applications blocking of ambient light should be used • For high gain applications bias voltage should be temperature compensated • Please consider basic ESD protection while handling • Use low noise read-out - IC • For further questions please refer to document "Instructions for handling and processing" • Optimum gain: 50-60 Diode, protective circuit Read-out circuit or f.e. 50 Load resistance Package dimension: Small quantities: Foam pad, boxed (12 cm x 16.5 cm) Disclaimer: Due to our strive for continuous improvement, specifications are subject to change within our PCN policy according to JESD46C. European, International Sales: First Sensor AG Peter-Behrens-Strasse 15 12459 Berlin Germany Phone: +49-30-6399-2399 Fax: +49-30-6399-23752 E-Mail: [email protected] USA: First Sensor, Inc. 5700 Corsa Avenue #105 Westlake Village CA 91362 USA Phone: +1-818-706-3400 Fax: +1-818-889-7053 E-Mail: [email protected]