Marktech DA700 Direct attach da700 led Datasheet

Direct Attach DA700™ LEDs
CxxxDA700-Sxx000
Data Sheet
Cree’s Direct Attach DA700 LEDs are the next generation of solid-state LED emitters that combine highly efficient
InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for
the TV-backlighting and general-illumination markets. The DA700 LEDs are among the brightest in the lighting market
while delivering a low forward voltage, resulting in a very bright and highly efficient solution. The bondpad-down
design allows for eutectic die attach, eliminating the need for wire bonds, and enables superior performance from
improved thermal management.
FEATURES
APPLICATIONS
•
Direct Attach LED Technology
•
•
Rectangular LED RF Performance
−
Aircraft
–
−
Decorative Lighting
450 & 460 nm – 430 mW min
General Illumination
•
High Reliability - Eutectic Attach
−
Task Lighting
•
Low Forward Voltage (Vf) – 3.3 V Typical at 350 mA
−
Outdoor Illumination
•
Maximum DC Forward Current – 750 mA
•
White LEDs
•
InGaN Junction-Down Design for Improved Thermal
•
Camera Flash
Management
•
Projection Displays
No Wire Bonds Required
•
Automotive
•
Large LCD Backlighting
•
–
Television
CxxxDA700-Sxx000 Chip Diagram
.CPR3EU Rev
Data Sheet:
Top View
Die Cross Section
DA700 LED
700 x 700 μm
Bottom View
Anode (+)
645 x 75 μm
Gap 75 μm
Cathode (-)
645 x 495 μm
t = 335 μm
Subject to change without notice.
www.cree.com
1
Maximum Ratings at TA = 25°C Notes 1, 2 & 3
CxxxDA700-Sxx000
DC Forward Current
750 mA
Peak Forward Current (1/10 duty cycle @ 1 kHz)
1000 mA
LED Junction Temperature
150°C
Reverse Voltage
5V
Operating Temperature Range
-40°C to +100°C
Storage Temperature Range
-40°C to +100°C
Typical Electrical/Optical Characteristics at TA = 25°C, If = 350 mA
Part Number
Note 2
Forward Voltage (Vf, V)
Reverse Current
[I(Vr=5V), μA]
Full Width Half Max
(λD, nm)
Min.
Typ.
Max.
Max.
Typ.
C450DA700-Sxx000
2.9
3.3
3.5
2
20
C460DA700-Sxx000
2.9
3.3
3.5
2
21
Mechanical Specifications
CxxxDA700-Sxx000
Description
Dimension
Tolerance
P-N Junction Area (μm)
645 x 645
±35
Chip Bottom Area (μm)
700 x 700
±35
Chip Top Area (μm)
340 x 340
±35
Chip Thickness (μm)
335
±25
AuSn Bond Pad Width – Anode (um)
75
±15
AuSn Bond Pad Length – Anode (um)
645
±35
AuSn Bond Pad Width – Cathode (um)
495
±35
AuSn Bond Pad Length – Cathode (um)
645
±35
75
±15
3
±0.5
Bond Pad Gap (μm)
AuSn Bond Pad Thickness (μm)
Notes:
1.
2.
3.
Maximum ratings are package-dependent. The above ratings were determined using a Cree 3.45-mm x 3.45-mm SMT package (with silicone
encapsulation and intrinsic AuSn metal die attach) for characterization. Ratings for other packages may differ. Junction temperature should be
characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds).
All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 350
mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values
expected by manufacturer in large quantities and are provided for information only. All measurements were made using lamps in T-1¾ packages (with
Hysol OS4000 epoxy encapsulant and intrinsic AuSn metal die attach). Optical characteristics measured in an integrating sphere using Illuminance E.
The maximum forward current is determined by the thermal resistance between the LED junction and ambient. It is crucial for the end-product to be
designed in a manner that minimizes the thermal resistance from the LED junction to ambient in order to optimize product performance.
800
Maximum Forward Current (mA)
700
600
500
400
Rth j-a = 10
Rth j-a = 15
Rth j-a = 20
Rth j-a = 25
300
200
100
C/W
C/W
C/W
C/W
0
25
50
75
100
125
150
175
Ambient Temperature (C)
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and DA and DA700 are trademarks of Cree, Inc.
2
CPR3EU Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Standard Bins for CxxxDA700-Sxx000
LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from
only one bin. Sorted die kit (CxxxDA700-Sxxxxx) orders may be filled with any or all bins (CxxxDA700-xxxxx) contained
in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 350 mA.
Radiant Flux (mW)
C450DA700-S43000
C450DA700-0217
C450DA700-0218
C450DA700-0219
C450DA700-0220
C450DA700-0213
C450DA700-0214
C450DA700-0215
C450DA700-0216
C450DA700-0209
C450DA700-0210
C450DA700-0211
C450DA700-0212
C450DA700-0205
C450DA700-0206
C450DA700-0207
C450DA700-0208
515
485
455
430
445
447.5
450
452.5
455
Dominant Wavelength (nm)
Radiant Flux (mW)
C460DA700-S43000
C460DA700-0217
C460DA700-0218
C460DA700-0219
C460DA700-0220
C460DA700-0213
C460DA700-0214
C460DA700-0215
C460DA700-0216
C460DA700-0209
C460DA700-0210
C460DA700-0211
C460DA700-0212
C460DA700-0205
C460DA700-0206
C460DA700-0207
C460DA700-0208
515
485
455
430
455
457.5
460
462.5
465
Dominant Wavelength (nm)
Note: The radiant-flux values above are representative of the die in a T-1¾ encapsulated 5-mm lamp.
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and DA and DA700 are trademarks of Cree, Inc.
3
CPR3EU Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
DW Shift (
0
-1
-2
Characteristic
Curves
0
100
200
300
400
500
600
700
If (mA)
These are representative measurements for the DA LED product. Actual curves will vary slightly for the various radiant
Relative Light Intensity Vs Junction Temperature
flux and dominant wavelength bins.
100%
Wavelength Shift vs. Forward Current
Forward Current vs. Forward Voltage
95%
2
Relative Intensity
DW Shift (nm)
700
600
If (mA)
500
400
300
200
90%
1
85%
80%
0
75%
-1
70%
25
100
0
50
1
2
3
4
5
100
125
150
Junction Temperature (°C)
-2
0
75
0
100
200
300
Vf (V)
400
500
600
700
If (mA)
Relative Intensity vs. Forward Current
Dominant Wavelength Shift Vs Junction Temperature
200%
6
Forward Current vs. Forward Voltage
175%
700
Shift (nm)
IfDW
(mA)
Relative Intensity
150%
125%
100%
75%
5
600 4
500
3
400
2
50%
300
25%
200
1
100 0
0%
0
100
200
300
400
500
600
25
700
0
If (mA)
75
100
125
2
3 (°C)
Junction
Temperature
1
150
4
5
Vf (V)
Voltage Shift Vs Junction Temperature
Relative Light Intensity Vs Junction Temperature
0.000
100%
Wavelength Shift vs. Forward Current
95%
2
-0.050
-0.100
Voltage Shift (V)
Relative
DW Shift
(nm) Intensity
50
0
90%
1
85%
80%
0
-0.150
-0.200
-0.250
-0.300
75%
-0.350
-1
70%
-0.400
25
50
75
100
125
150
Junction Temperature (°C)
-2
0
100
200
300
400
500
25
50
75
100
125
150
Junction Temperature (°C)
600
700
If (mA)
Dominant Wavelength Shift Vs Junction Temperature
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and DA and DA700 are trademarks of Cree, Inc.
6
4
5
CPR3EU Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
DA700 blue
Radiation Pattern
This is a representative radiation pattern for the DA LED product. Actual patterns will vary slightly for each chip.
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and DA and DA700 are trademarks of Cree, Inc.
5
CPR3EU Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
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