APT15F50K_KF 500V, 15A, 0.39Ω Max, trr ≤190ns N-Channel FREDFET APT15F50KF Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. D APT15F50K G Single die FREDFET S TYPICAL APPLICATIONS FEATURES • Fast switching with low EMI • ZVS phase shifted and other full bridge • Low trr for high reliability • Half bridge • Ultra low Crss for improved noise immunity • PFC and other boost converter • Low gate charge • Buck converter • Avalanche energy rated • Single and two switch forward • RoHS compliant • Flyback Absolute Maximum Ratings Symbol Parameter 15F50K 15F50KF Continuous Collector Current @ TC = 25°C 15 6.2 Continuous Collector Current @ TC = 100°C 10 3.9 IDM Pulsed Drain Current 1 45 18.6 VGS Gate-Source Voltage EAS Single Pulse Avalanche Energy 2 IAR Avalanche Current, Repetitive or Non-Repetitive ID 2 Unit A ±30 V 305 mJ 7 A Thermal and Mechanical Characteristics PD Min Typ Max Unit Power Dissipation (TC = 25°C) [K] 223 W Power Dissipation (TC = 25°C) [KF] 37 RθJC Junction to Case Thermal Resistance [K] 0.56 RθJC Junction to Case Thermal Resistance [KF] 3.3 RθCS Case to Sink Thermal Resistance, Flat, Greased Surface TJ,TSTG Operating and Storage Junction Temperature Range TL Soldering Temperature for 10 Seconds (1.6mm from case) WT Package Weight Torque Mounting Torque ( TO-220 Package), 4-40 or M3 screw Microsemi Website - http://www.microsemi.com °C/W 0.11 -55 150 300 °C 0.07 oz 1.2 g 10 in·lbf 1.1 N·m 050-8145 Rev E 3-2010 Symbol Parameter Static Characteristics TJ = 25°C unless otherwise specified Symbol Parameter Test Conditions Min VBR(DSS) Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA 500 ∆VBR(DSS)/∆TJ VGS = 10V, ID = 7A Drain-Source On Resistance VGS(th) Gate-Source Threshold Voltage ∆VGS(th)/∆TJ 3 VGS = VDS, ID = 0.5mA Threshold Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current VDS = 500V TJ = 25°C VGS = 0V TJ = 125°C Forward Transconductance Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance Max 0.60 0.33 4 -10 0.39 5 250 1000 ±100 Unit V V/°C Ω V mV/°C μA nA TJ = 25°C unless otherwise specified Parameter gfs 2.5 Typ VGS = ±30V Dynamic Characteristics Symbol Reference to 25°C, ID = 250μA Breakdown Voltage Temperature Coefficient RDS(on) APT15F50K_KF Test Conditions VDS = 50V, ID = 7A Min VGS = 0V, VDS = 25V f = 1MHz Co(cr) 4 Effective Output Capacitance, Charge Related Co(er) 5 Effective Output Capacitance, Energy Related Typ 11 2250 30 240 Max Unit S pF 140 VGS = 0V, VDS = 0V to 333V Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-On Delay Time tr td(off) tf 70 55 13 26 10 12 26 8 VGS = 0 to 10V, ID = 7A, VDS = 250V Resistive Switching VDD = 333V, ID = 7A Current Rise Time RG = 10Ω 6 , VGG = 15V Turn-Off Delay Time Current Fall Time nC ns Source-Drain Diode Characteristics Symbol IS Parameter Continuous Source Current (Body Diode) Pulsed Source Current ISM (Body Diode) 1 VSD Diode Forward Voltage 3 Test Conditions Min Typ K KF MOSFET symbol showing the integral reverse p-n junction diode (body diode) Reverse Recovery Time ISD = 7A 3 VDD = 100V Reverse Recovery Charge Qrr diSD/dt = 100A/μs Reverse Recovery Current Irrm Peak Recovery dv/dt D 6.2 G 45 S 1.0 TJ = 25°C 190 TJ = 125°C 340 TJ = 25°C 0.54 TJ = 125°C 1.27 TJ = 25°C 5.9 TJ = 125°C 7.9 ISD ≤ 7A, di/dt ≤1000A/μs, VDD = 333V, TJ = 125°C A 18.6 ISD = 7A, TJ = 25°C, VGS = 0V trr dv/dt Unit 15 K KF Max V ns μC A 20 V/ns 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 050-8145 Rev E 3-2010 2 Starting at TJ = 25°C, L = 12.45mH, RG = 25Ω, IAS = 7A. 3 Pulse test: Pulse Width < 380μs, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -5.22E-8/VDS^2 + 1.21E-8/VDS + 3.48E-11. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. APT15F50K_KF 50 V 45 GS 25 = 10V T = 125°C J TJ = -55°C V 20 ID, DRIAN CURRENT (A) ID, DRAIN CURRENT (A) 40 35 30 TJ = 25°C 25 20 15 TJ = 125°C 10 15 6V 10 5.5V 5 5V 0 0 5 10 15 20 25 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) 0 2.5 NORMALIZED TO VDS> ID(ON) x RDS(ON) MAX. 250μSEC. PULSE TEST @ <0.5 % DUTY CYCLE 40 VGS = 10V @ 7A 2.0 1.5 1.0 0.5 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 2, Output Characteristics 45 ID, DRAIN CURRENT (A) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE Figure 1, Output Characteristics 35 30 25 TJ = -55°C 20 TJ = 25°C 15 TJ = 125°C 10 5 0 -55 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 3, RDS(ON) vs Junction Temperature 0 18 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 4, Transfer Characteristics 4,000 16 14 TJ = 25°C 12 TJ = 125°C 10 Ciss 1,000 TJ = -55°C C, CAPACITANCE (pF) gfs, TRANSCONDUCTANCE 6.5V TJ = 150°C 5 0 = 7, & 10V GS 8 6 4 100 Coss Crss 10 2 VGS, GATE-TO-SOURCE VOLTAGE (V) 16 2 4 6 8 10 12 ID, DRAIN CURRENT (A) Figure 5, Gain vs Drain Current 100 200 300 400 500 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6, Capacitance vs Drain-to-Source Voltage 12 VDS = 160V 10 VDS = 400V 8 6 VDS = 640V 4 2 0 0 45 ID = 7A 14 0 1 14 20 40 60 80 100 Qg, TOTAL GATE CHARGE (nC) Figure 7, Gate Charge vs Gate-to-Source Voltage 40 35 30 25 TJ = 25°C 20 TJ = 150°C 15 10 5 0 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 8, Reverse Drain Current vs Source-to-Drain Voltage 050-8145 Rev E 3-2010 0 ISD, REVERSE DRAIN CURRENT (A) 0 APT15F50K_KF 100 TJ = 125°C TC = 75°C ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 100 IDM 10 Rds(on) 13μs 100μs 1ms 10ms TJ = 125°C TC = 75°C IDM 10 Rds(on) 13μs 100μs 1ms 10ms 100ms DC line 100ms DC line 1 1 1 10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, 15F50K Forward Safe Operating Area 1 10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, 15F50KF Forward Safe Operating Area D = 0.9 0. 5 0. 4 0.7 0. 3 0.5 0. 2 Note: PDM ZθJC, THERMAL IMPEDANCE (°C/W) 0. 6 0.3 t1 t2 t1 = Pulse Duration 0. 1 t 0.1 SINGLE PULSE 0.05 0 10 10-5 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC -4 10-2 10-3 0.1 1 RECTANGULAR PULSE DURATION (seconds) Figure 11, 15F50K -Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration 3.5 2.5 0.7 2.0 0.5 Note: 1.5 PDM ZθJC, THERMAL IMPEDANCE (°C/W) D = 0.9 3.0 0.3 1.0 t2 t 0.1 0.5 0.05 0 t1 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC SINGLE PULSE 10-4 10-5 10-2 10-3 0.1 1 RECTANGULAR PULSE DURATION (SECONDS) Figure 12, 15F50KFMaximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration TO-220 (K) Package Outline e3 100% Sn Plated 1.39 (.055) 0.51 (.020) Drain 10.66 (.420) 9.66 (.380) 5.33 (.210) 4.83 (.190) TO-220 (KF) Package Outline e3 100% Sn Plated 6.85 (.270) 5.85 (.230) 16.25 (.639) 14.23 (.560) 4.08 (.161) Dia. 3.54 (.139) 3.42 (.135) 2.54 (.100) 050-8145 Rev E 3-2010 3.683 (.145) MAX. 0.50 (.020) 0.41 (.016) 2.92 (.115) 2.04 (.080) 4.82 (.190) 3.56 (.140) 14.73 (.580) 12.70 (.500) Gate Drain Source 1.01 (.040) 3-Plcs. 0.83 (.033) 2.79 (.110) 2.29 (.090) 5.33 (.210) 4.83 (.190) 1.77 (.070) 3-Plcs. 1.15 (.045) Dimensions in Millimeters and (Inches) Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.