DMN61D8LVTQ INTEGRATED RELAY AND INDUCTIVE LOAD DRIVER Product Summary BVDSS Features and Benefits 1.8Ω @ VGS = 5V 60V ID max TA = +25°C RDS(ON) max 2.4Ω @ VGS = 3V 630mA Description and Applications DMN61D8LVTQ provides a single component solution for switching inductive loads such as relays, solenoids, and small DC motors in automotive applications, without the need of a freewheeling diode. DMN61D8LVTQ accepts logic level inputs, thus allowing it to be driven by logic gates, inverters and microcontrollers. It is ideally suited for door, window and antenna relay coils. Provides a reliable and robust interface between sensitive logic and DC relay coils Replaces 3 to 4 discrete components enabling PCB footprint to be reduced Internal active clamp removes the need for external zener diode Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Mechanical Data Case: TSOT26 Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Terminals: Finish – Matte Tin Annealed over Copper Leadframe; Solderable per MIL-STD-202, Method 208 e3 Weight: 0.013 grams (Approximate) ESD Protected Gate TSOT26 Top View Internal Schematic Top View Equivalent Circuit Ordering Information (Note 5) Notes: Part Number Case Packaging DMN61D8LVTQ-7 TSOT26 3,000/Tape & Reel DMN61D8LVTQ-13 TSOT26 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information TSOT26 1D8 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: D = 2016) M = Month (ex: 9 = September) Date Code Key Year Code Month Code 2016 D Jan 1 2017 E Feb 2 DMN61D8LVTQ Document number: DS37822 Rev. 3 - 2 Mar 3 2018 F Apr 4 May 5 2019 G Jun 6 1 of 7 www.diodes.com 2020 H Jul 7 Aug 8 2021 I Sep 9 Oct O 2022 J Nov N Dec D December 2016 © Diodes Incorporated DMN61D8LVTQ Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±12 V ID 630 500 mA IS 0.5 A EZ 200 mJ PPK 20 W ELD1 60 V ELD2 100 V ELD3 300 V Rev−Bat -14 V Dual−Volt 28 V ESD 4,000 V Symbol Value Units PD 820 mW RθJA 154 °C/W PD 1,090 mW RθJA 116 °C/W TJ, TSTG -55 to +150 °C Continuous Drain Current (Note 7) Steady State TA = +25°C TA = +70°C Maximum Continuous Body Diode Forward Current (Note 7) Single Pulse Drain-to-Source Avalanche Energy (For Relay’s Coils/Inductive Loads of 80Ω or Higher) (TJ Initial = +85°C) Peak Power Dissipation, Drain-to-Source (Non repetitive current square pulse 1.0ms duration) (TJ Initial = +85°C) Load Dump Pulse, Drain-to-Source, RSOURCE = 0.5Ω, t = 300ms) (For Relay’s Coils/Inductive Loads of 80Ω or Higher) (TJ Initial = +85°C) Inductive Switching Transient 1, Drain-to-Source (Waveform: RSOURCE = 10Ω, t = 2.0ms) (For Relay’s Coils/Inductive Loads of 80Ω or Higher) (TJ Initial = +85°C) Inductive Switching Transient 2, Drain-to-Source (Waveform: RSOURCE = 4.0Ω, t = 50µs) (For Relay’s Coils/Inductive Loads of 80Ω or Higher) (TJ Initial = +85°C) Reverse Battery, 10 Minutes (Drain-to-Source) (For Relay’s Coils/Inductive Loads of 80Ω or more) Dual Voltage Jump Start, 10 Minutes (Drain-to-Source) ESD Human Body Model (HBM) Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Steady State Total Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient (Note 7) Steady State Operating and Storage Temperature Range Notes: 6. Device mounted on FR-4 PCB, with minimum recommended pad layout. 7. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. copper, single sided. DMN61D8LVTQ Document number: DS37822 Rev. 3 - 2 2 of 7 www.diodes.com December 2016 © Diodes Incorporated DMN61D8LVTQ Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Symbol Min Typ BVDSS 60 Drain-Source Breakdown Voltage Max Unit Test Condition V VGS = 0V, ID = 10mA µA VDS = 60V, VGS = 0V VDS = 12V, VGS = 0V Zero Gate Voltage Drain Current IDSS 50 0.5 Gate-Source Leakage IGSS ±90 ±60 µA VGS = ±5V, VDS = 0V VGS = ±3V, VDS = 0V Gate Threshold Voltage VGS(TH) 1.3 2.0 V VDS = VGS, ID = 1mA Static Drain-Source On-Resistance RDS(ON) 1.1 1.4 1.8 2.4 Ω Forward Transfer Admittance |Yfs| 80 ms VDS = 12V, ID = 0.15A Diode Forward Voltage VSD 1.2 V VGS = 0V, IS = 0.15A Input Capacitance Ciss 12.9 pF Output Capacitance Coss 17 pF Reverse Transfer Capacitance Crss 0.84 pF Total Gate Charge Qg 0.74 nC Gate-Source Charge Qgs 0.19 nC ON CHARACTERISTICS (Note 8) VGS = 5V, ID = 0.15A VGS = 3V, ID = 0.15A DYNAMIC CHARACTERISTICS (Note 9) Qgd 0.16 nC Turn-On Delay Time tD(ON) 131 ns Turn-On Rise Time tR 301 ns Turn-Off Delay Time tD(OFF) 582 ns tF 440 ns Gate-Drain Charge Turn-Off Fall Time Notes: VDS = 12V, VGS = 0V f = 1.0MHz VGS = 5V, VDS = 12V, ID =150mA VDD = 12V, VGS = 5V 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 1 VGS = 10V 1 VGS = 3.0V VDS = 5.0V VGS = 4.0V VGS = 4.5V 0.8 VGS = 5.0V 0.6 ID, DRAIN CURRENT (A) ID , DRAIN CURRENT (A) 0.8 VGS = 2.5V 0.4 0.6 T A = 150°C 0.4 T A = 85°C 0.2 0.2 TA = 125°C TA = 25°C VGS = 2.0V 0 0 VGS = 1.8V 1 2 3 4 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristic DMN61D8LVTQ Document number: DS37822 Rev. 3 - 2 5 3 of 7 www.diodes.com 0 1 TA = -55°C 1.5 2 2.5 3 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 3.5 December 2016 © Diodes Incorporated 2 1.8 1.6 VGS = 3V 1.4 1.2 VGS = 5V 1 0.8 0.6 0.4 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () DMN61D8LVTQ 4 3 1 0 0 3 2 4 6 8 10 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristic 12 2 VGS = 5V 2.5 T A = 150°C 2 TA = 125°C 1.5 TA = 85°C 1 T A = 25°C T A = -55°C 0.5 1.8 VGS = 5V I D = 150mA 1.6 VGS = 3V I D = 150mA 1.4 1.2 1 0.8 0 0 0.2 0.4 0.6 0.8 ID , DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature 1 0.6 -50 100 125 150 0 25 50 75 TJ, JUNCTION TEMPERATURE ( C) Figure 6 On-Resistance Variation with Temperature -25 1.8 VGS(th), GATE THRESHOLD VOLTAG E (V) 3 R DS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) ID = 150mA 2 RDS(ON), DRAI N-SOURCE ON-RESISTANCE (NORMALIZED) RD S(ON ), DRAIN-SOURCE ON-RESISTANCE ( ) ID , DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 5 2.5 VGS = 3V 2 I D = 150mA 1.5 VGS = 5V ID = 150mA 1 0.5 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 7 On-Resistance Variation with Temperature DMN61D8LVTQ Document number: DS37822 Rev. 3 - 2 4 of 7 www.diodes.com 1.7 1.6 ID = 1mA 1.5 1.4 ID = 250µA 1.3 1.2 1.1 1 0.9 -50 25 -25 0 50 75 100 125 150 TJ, JUNCTION C) JUNCTION TEMPERATURE TEMPERATURE((° C) Figure 8 Gate vs.vs. Ambient Temperature Figure GateThreshold ThresholdVariation Variation Junction Temperature December 2016 © Diodes Incorporated DMN61D8LVTQ 100 1 0.8 CT , JUNCTION CAPACITANCE (pF) IS, SOURCE CURRENT (A) f = 1MHz T A = 150°C TA = 125°C T A = 85°C 0.6 0.4 T A = 25°C 0.2 0 0 T A = -55°C 0.3 0.6 0.9 1.2 V SD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 1.5 Ciss 10 Coss 1 C rss 0 0 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 40 VGS GATE THRESHOLD VOLTAGE (V) 7 6 5 4 VDS = 12V 3 I D = 150mA 2 1 0 0 0.2 0.4 0.6 0.8 1 1.2 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge r(t), TRANSIENT THERMAL RESISTANCE 1 1.4 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 Rthja (t) = r(t) * Rthja RJA = 154°C/W Duty Cycle, D = t1/ t2 D = Single Pulse 0.001 0.00001 DMN61D8LVTQ Document number: DS37822 Rev. 3 - 2 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance 5 of 7 www.diodes.com 10 100 1000 December 2016 © Diodes Incorporated DMN61D8LVTQ Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. TSOT26 D e1 01(4x) E1/2 E/2 E1 c E Gauge Plane 0 L e Seating Plane L2 01(4x) b A2 A1 A Seating Plane TSOT26 Dim Min Max Typ A 1.00 A1 0.010 0.100 A2 0.840 0.900 D 2.800 3.000 2.900 E 2.800 BSC E1 1.500 1.700 1.600 b 0.300 0.450 c 0.120 0.200 e 0.950 BSC e1 1.900 BSC L 0.30 0.50 L2 0.250 BSC θ 0° 8° 4° θ1 4° 12° All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. TSOT26 C Dimensions Value (in mm) C 0.950 X 0.700 Y 1.000 Y1 3.199 Y1 Y X DMN61D8LVTQ Document number: DS37822 Rev. 3 - 2 6 of 7 www.diodes.com December 2016 © Diodes Incorporated DMN61D8LVTQ IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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